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224 records · Page 13
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NASA NTRS1988

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

Popovic, Zorana B.↗
NASA NTRS1992

94 GHz integrated horn monopulse antennas

A monolithic azimuthal monopulse antenna for 94 GHz applications has been developed. The structure consists of a single dipole suspended in one plane of an integrated horn cavity to obtain the sum pattern, and an antiparallel pair of dipoles suspended in a different plane of the same horn cavity to achieve the difference pattern. Pattern measurements of microwave models and on the millimeter-wave antennas show good agreement with theory and exhibit symmetry with a sharp -30 dB null at broadside for the difference antenna. Microwave model measurements show input impedances close to 50 Ohms, with greater than -25 dB isolation between sum and difference antennas across a 10 percent bandwidth.

Ling, Curtis C.↗
NASA NTRS1988

Development of 20 GHz monolithic transmit modules

The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave circuit integration which were successfully overcome. Yield and customer considerations finally led to two separate chips, one containing the power amplifiers and the other containing the complete five bit phase shifter.

Higgins, J. A.↗
NASA NTRS1987

Rectenna Technology Program: Ultra light 2.45 GHz rectenna 20 GHz rectenna

The program had two general objectives. The first objective was to develop the two plane rectenna format for space application at 2.45 GHz. The resultant foreplane was a thin-film, etched-circuit format fabricated from a laminate composed of 2 mil Kapton F sandwiched between sheets of 1 oz copper. The thin-film foreplane contains half wave dipoles, filter circuits, rectifying Schottky diode, and dc bussing lead. It weighs 160 grams per square meter. Efficiency and dc power output density were measured at 85% and 1 kw/sq m, respectively. Special testing techniques to measure temperature of circuit and diode without perturbing microwave operation using the fluoroptic thermometer were developed. A second objective was to investigate rectenna technology for use at 20 GHz and higher frequencies. Several fabrication formats including the thin-film scaled from 2.45 GHz, ceramic substrate and silk-screening, and monolithic were investigated, with the conclusion that the monolithic approach was the best. A preliminary design of the monolithic rectenna structure and the integrated Schottky diode were made.

Brown, William C.↗
NASA NTRS2000

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

Miranda, Felix A.↗
NASA NTRS2011

NASA Tech Briefs, November 2011

The topics include: 1) Flight Test Results from the Rake Airflow Gage Experiment on the F-15B; 2) Telemetry and Science Data Software System; 3) CropEx Web-Based Agricultural Monitoring and Decision Support; 4) High-Performance Data Analysis Tools for Sun-Earth Connection Missions; 5) Experiment in Onboard Synthetic Aperture Radar Data Processing; 6) Microfabrication of a High-Throughput Nanochannel Delivery/Filtration System; 7) Improved Design and Fabrication of Hydrated-Salt Pills; 8) Monolithic Flexure Pre-Stressed Ultrasonic Horns; 9) Cryogenic Quenching Process for Electronic Part Screening; 10) Broadband Via-Less Microwave Crossover Using Microstrip-CPW Transitions; 11) Wheel-Based Ice Sensors for Road Vehicles; 12) G-DYN Multibody Dynamics Engine; 13) Multibody Simulation Software Testbed for Small-Body Exploration and Sampling; 14) Propulsive Reaction Control System Model; 15) Licklider Transmission Protocol Implementation; 16) Core Recursive Hierarchical Image Segmentation; 17) Two-Stage Centrifugal Fan; 18) Combined Structural and Trajectory Control of Variable-Geometry Planetary Entry Systems; 19) Pressure Regulator With Internal Ejector Circulation Pump, Flow and Pressure Measurement Porting, and Fuel Cell System Integration Options; 20) Temperature-Sensitive Coating Sensor Based on Hematite; 21) Standardization of a Volumetric Displacement Measurement for Two-Body Abrasion Scratch Test Data Analysis; 22) Detection of Carbon Monoxide Using Polymer-Carbon Composite Films; 23) Substituted Quaternary Ammonium Salts Improve Low-Temperature Performance of Double-Layer Capacitors; 24) Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer; 25) Integrated Lens Antennas for Multi-Pixel Receivers; 26) 180-GHz Interferometric Imager; 27) Maturation of Structural Health Management Systems for Solid Rocket Motors; 28) Validating Phasing and Geometry of Large Focal Plane Arrays; 29) Transverse Pupil Shifts for Adaptive Optics Non-Common Path Calibration; 30) Qualification of Fiber Optic Cables for Martian Extreme Temperature Environments; 31) Solid-State Spectral Light Source System; 32) Multiple-Event, Single-Photon Counting Imaging Sensor; 33) Surface Modeling to Support Small-Body Spacecraft Exploration and Proximity Operations; and 34) Achieving Exact and Constant Turnaround Ratio in a DDS-Based Coherent Transponder.

Source record↗
NASA NTRS1995

Low-cost 20-22 GHz MIC active receiver/radiometer

A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.

PLANAR SCHOTTKY DIODE DETECTOR↗