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Results for “radiation hardness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

In-pixel integration of signal processing and AI/ML based data filtering for particle tracking detectors

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for ASIC implementation, this work marks a significant milestone toward intelligent silicon trackers. Our prototype readout chip performs real-time data reduction at the sensor level while meeting stringent requirements on power, area, and latency. The chip is taped-out in 28nm TSMC CMOS bulk process, which has been shown to have sufficient radiation hardness for particle experiments. This development represents a key step toward enabling fully on-detector edge AI, with broad implications for data throughput and discovery potential in high-rate, high-radiation environments such as the High-Luminosity LHC.

Parpillon, Benjamin [Fermilab; Illinois U., Chicag↗
DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗
NASA NTRS1995

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Wojtczuk, Steven↗
NASA NTRS1998

Current Radiation Issues for Programmable Elements and Devices

State of the an programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper will discuss that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and have resultant system impacts in (1) reliability of the unprogrammed, biased antifuse for heavy ions (rupture), (2) logic upset manifesting itself as clock upset, and (3) configuration upset. General radiation characteristics of advanced technologies are examined and manufacturers' modifications to their COTS-based and their impact on future programmable devices will be analyzed.

Katz, R.↗
NASA NTRS2001

Future Development of Dense Ferroelectric Memories for Space Applications

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Philpy, Stephen C.↗
NASA NTRS1994

Total Dose Effects in Conventional Bipolar Transistors

This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

Bipolar Devices Cassini Ionizing radiation effects↗
DOE OSTI2021

Compact Solid-State High-Voltage Switch

Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.

42 ENGINEERING↗
NASA NTRS1987

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
NASA NTRS2001

An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip

The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.

Jackson, S. A.↗
NASA NTRS2006

The Stretched Lens Array SquareRigger (SLASR) for Space Power

For the past three years, our team has been developing, refining, and maturing a unique solar array technology known as Stretched Lens Array SquareRigger (SLASR). SLASR offers an unprecedented portfolio of state-of-the-art performance metrics, including areal power density, specific power, stowed power density, high-voltage capability, radiation hardness, modularity, scalability, mass-producibility, and cost-effectiveness. SLASR is particularly well suited to high-power space missions, including solar electric propulsion (SEP) space tugs, major exploration missions to the Moon and Mars, and power-intensive military spacecraft. SLASR is also very well suited to high-radiation missions, since the cell shielding mass penalty is 85% less for the SLASR concentrator array than for one-sun planar arrays. The paper describes SLASR technology and presents significant results of developments to date in a number of key areas, from advances in the key components to full-scale array hardware fabrication and evaluation. A summary of SLASR s unprecedented performance metrics, both near-term and longer term, will be presented. Plans for future SLASR developments and near-term space applications will also be outlined.

Piszczor, Michael F.↗
NASA NTRS1981

A radiation-hardened star scanner for spacecraft guidance and control

A star scanner for the Galileo Project is described. Because it must function in the intense Jupiter radiation field, which consists primarily of high-energy electrons and protons, this star scanner is designed with radiation-hardness as a prime objective. The optics and the multiplier phototube are specially designed to minimize fluorescence and Cerenkov effects, and the electronic components to minimize ionization and displacement damage. The star-scanner layout provides maximum shielding for the optics and phototube. Test results predict successful operation in the expected Jovian radiation environment.

Birnbaum, M. M.↗
NASA NTRS1990

GaAs VLSI for aerospace electronics

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Larue, G.↗
NASA NTRS2008

The impact of hydrogen contamination on the Total Dose Response of Linear Bipolar Microcircuits

Recent enhanced low dose rate sensitivity (ELDRS) investigations carried out by RLP Research, Crane, Arizona State University (ASU), and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar microcircuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunity to improve device performance. The objectives of this program are 1) to investigate and confirm the causal relationship between packaging recipes, hydrogen contamination, and total dose response of linear bipolar microcircuits; and 2) to develop a guideline that will take into account these effects at the radiation level for future NASA space missions. This program is geared to benefit all future NASA space missions using bipolar or BiCMOS linear devices.

McClure, Steve S.↗
NASA NTRS1978

Analysis of long-term ionizing radiation effects in bipolar transistors

The ionizing radiation effects of electrons on bipolar transistors have been analyzed using the data base from the Voyager project. The data were subjected to statistical analysis, leading to a quantitative characterization of the product and to data on confidence limits which will be useful for circuit design purposes. These newly-developed methods may form the basis for a radiation hardness assurance system. In addition, an attempt was made to identify the causes of the large variations in the sensitivity observed on different product lines. This included a limited construction analysis and a determination of significant design and processes variables, as well as suggested remedies for improving the tolerance of the devices to radiation.

Stanley, A. G.↗
NASA NTRS1995

RY Scuti: Infrared and radio observations of the mass-loss wind of a massive binary star system

We report infrared (IR) imaging, IR photometry, IR spectroscopy, optical/IR photopolarimetry, and Very Large Array (VLA) radio observations of the peculiar binary star RY Scuti. These observations provide an unprecedented view of the detailed spatial structure of the equatorial mass-loss wind of a massive, luminous, 'overcontact' binary system. The binary star (0.43 AU separation) is surrounded by a flattened equatorial disk with an outer radius of approximately = 3 x 10(exp 16) cm (2000 AU) that emits strongly in the IR and radio. The inside of the disk is ionized and emits free-free radiation from hydrogen and 12.8 micrometers forbidden-line emission from (Ne II); the outside of the disk emits thermal radiation from silicate dust. Radio continuum emission is also produced in a compact H II region surrounding the binary. The dust may have a polycyclic aromatic hydrocarbon (PAH) component. We use a rudimentary geometric model in which the thermal IR and radio emission from the disk are assumed to arise in a pair of concentric toroidal rings to estimate the physical properties of the disk. The mean radius of the ionized gas toroid is approximately = 1.3 x 10(exp 16) cm (870 AU), and the mean radius of the dust toroid is approximately = 2.2 x 10(exp 16) cm (1470 AU). RY Scuti has a small intrinsic polarization, with the electric vector perpendicular to the equatorial disk, that is probably caused by electron scattering from hot gas close to the central binary. We conclude that neon in the nebula is overabundant with respect to hydrogen and helium by a factor of between 1.6 and 10. Our IR/radio image data suggest that the circumstellar disk is part of an extensive radiation driven mass-loss outflow that is strongly confined to the equatorial plane of the binary system. The sharp spatial separation of the outer dust torous from the inner ionized gas torus confirms earlier suggestions that dust formation in the circumstellar ejecta of very hot stars must occur in regions that are shielded from the hard radiation field.

Gehrz, R. D.↗
DOE OSTI2024

Device response principles and the impact on energy resolution of epitaxial quantum dot scintillators with monolithic photodetector integration

Abstract Epitaxial quantum dot (QD) scintillator crystals with picosecond-scale timing and high light yield have been created for medical imaging, high energy physics and national security applications. Monolithic photodetector (PD) integration enables the sensing of photons generated within the waveguiding crystal and allows a wide range of scintillator-photodetector coupling geometries. Until recently, these doubly novel devices have suffered from complex, high variance responses to monoenergetic sources which significantly reduces their precision and accuracy. The principles governing the overall device response have now been discerned and embodied by an expression derived within a geometrical optics framework which considers optical properties, surface roughness and photodetector coupling geometry. Response variation due to these factors was sufficiently reduced to obtain material-related energy resolution values of 2.4% with alpha particles. These findings place energy resolution alongside luminescence timescale, photon yield, and radiation hardness as outstanding properties of these engineered materials.

36 MATERIALS SCIENCE↗