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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut für Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Detection of terahertz (THz) radiation has many potential applications, but presently available detectors are limited in many aspects of their performance, including sensitivity, speed, bandwidth and operating temperature. Most do not allow the characterization of THz polarization states. Recent observation of THz-driven luminescence in quantum dots offers a possible detection mechanism via field-driven interdot charge transfer. Here, we demonstrate a room-temperature complementary metal–oxide–semiconductor THz camera and polarimeter based on quantum-dot-enhanced THz-to-visible upconversion mechanism with optimized luminophore geometries and fabrication designs. Besides broadband and fast responses, the nanoslit-based sensor can detect THz pulses with peak fields as low as 10 kV cm–1. A related coaxial nanoaperture-type device shows a to-date-unexplored capability to simultaneously record the THz polarization state and field strength with similar sensitivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Probing the optical properties and toxicological profile of zinc tungstate nanorods

Zinc tungstate is a semiconductor known for its favorable photocatalytic, photoluminescence, and scintillation properties, coupled with its relatively low cost, reduced toxicity, and high stability in biological and catalytic environments. In particular, zinc tungstate evinces scintillation properties, namely the ability to emit visible light upon absorption of energetic radiation such as x rays, which has led to applications not only as radiation detectors but also for biomedical applications involving the delivery of optical light to deep tissue, such as photodynamic therapy and optogenetics. Here, we report on the synthesis of zinc tungstate nanorods generated via an optimized but facile method, which allows for synthetic control over the aspect ratio of the as-synthesized anisotropic motifs via rational variation of the solution pH. Additionally, we investigate the effect of aspect ratio on their resulting photoluminescent and radioluminescent properties. We further demonstrate the potential of these zinc tungstate nanorods for biomedical applications, such as photodynamic therapy for cancer treatment, by analyzing their toxicological profile within cell lines and neurons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Converting existing optical detectors into fast x-ray detectors

Here, the very short burn time and small size of burning plasmas created at advanced laser-fusion facilities will require high-spatial-resolution imaging diagnostics with fast time resolution. These instruments will need to function in an environment of extremely large neutron fluxes that will cause conventional diagnostics to fail because of radiation damage and induced background levels. One solution to this challenge is to perform an ultrafast conversion of the x-ray signals into the optical regime before the neutrons are able to reach the detector and then to relay image the signal out of the chamber and into a shielded bunker, protected from the effects of these neutrons. With this goal in mind, the OMEGA laser was used to demonstrate high-temporal-resolution x-ray imaging by using an x-ray snout to image an imploding backlighter capsule onto a semiconductor. The semiconductor was simultaneously probed with the existing velocity interferometry system for any surface reflector (VISAR) diagnostic, which uses an optical streak camera and provided a one-dimensional image of the phase in the semiconductor as a function of time. The phase induced in the semiconductor was linearly proportional to the x-ray emission from the backlighter capsule. This approach would then allow a sacrificial semiconductor to be attached at the end of an optical train with the VISAR and optical streak camera placed in a shielded bunker to operate in a high neutron environment and obtain time-dependent one-dimensional x-ray images or time-dependent x-ray spectra from a burning plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Ultrafast Electron Microscopy for Spatial-Temporal Mapping of Charge Carriers

This LDRD supported efforts to significantly advance the scanning ultrafast electron microscope (SUEM) for spatial-temporal mapping of charge carrier dynamics in semiconductor materials and microelectronic devices. Sandia's SUEM capability in Livermore, CA, was built and demonstrated with previous LDRD funding; however, the stability and usability of the tool limited the throughput for analyzing samples. A new laser alignment strategy improved the stability of the SUEM, and the design and characterization of a new micro-channel plate (MCP)- based detector improved the signal-to-noise of the SUEM signal detection. These enhancements to the SUEM system improved throughput by over two orders of magnitude (before, a single time series of SUEM measurements would take several days to several weeks to acquire; now, the same measurements can be completed in~90 minutes in an automated fashion). The SUEM system can now be routinely used as an analytical instrument and will be a central part of several multi-year projects starting in FY22.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a ${15} \times {15}~\mu $ m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of $0.15\text {e}^ - $ , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Compact single-shot soft X-ray photon spectrometer for free-electron laser diagnostics

The photon spectrum from free-electron laser (FEL) light sources offers valuable information in time-resolved experiments and machine optimization in the spectral and temporal domains. We have developed a compact single-shot photon spectrometer to diagnose soft X-ray spectra. The spectrometer consists of an array of off-axis Fresnel zone plates (FZP) that act as transmission-imaging gratings, a Ce:YAG scintillator, and a microscope objective to image the scintillation target onto a two-dimensional imaging detector. This spectrometer operates in segmented energy ranges which covers tens of electronvolts for each absorption edge associated with several atomic constituents: carbon, nitrogen, oxygen, and neon. The spectrometer’s performance is demonstrated at a repetition rate of 120 Hz, but our detection scheme can be easily extended to 200 kHz spectral collection by employing a fast complementary metal oxide semiconductor (CMOS) line-scan camera to detect the light from the scintillator. This compact photon spectrometer provides an opportunity for monitoring the spectrum downstream of an endstation in a limited space environment with sub-electronvolt energy resolution.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO 2 /epi-4H-SiC MOS capacitors

We report high resolution radiation detection has been demonstrated using Ni/SiO2/n-4H-SiC metal-oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers. The oxide layers have been grown thermally using two different approaches: i) in-air, and ii) oxygen-ambience oxidation. The devices fabricated using the former method exhibited dark currents one order of magnitude higher than that in the latter. The observed difference has been attributed to the back-contact series resistance and capacitance. Regardless of the difference in the device parameters, detectors prepared using both of the methods exhibited very high energy resolutions of ≤ 0.5% for 5486 keV alpha particles emitted by an 241Am radioisotope. Capacitance mode deep level transient spectroscopic (DLTS) studies revealed similar type of electrically active defects along with Z1/2 and EH5 deep level defects in both the types of devices. The DLTS scans also revealed positive polarity peaks in these devices which indicate emission from minority carrier trap centers. The activation energy corresponding to the peak was found to be ~1.2 eV which has been assigned to HK3 defects responsible for hole trapping in 4H-SiC. The possibility of appearance of the positive peak due to non-negligible impedance of the back-contact has been ruled out based on the observation that the centroid of the observed peak did not change with detectors having different device parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Analytic model of electron transport through and over non-linear barriers

Tunneling barriers are an essential component of electron sources, sensors, detectors, and vacuum nanoelectronics, and a pivotal factor in their performance, but the barriers themselves routinely depart from the analytic models used to model their behavior. Here, a new formalism is developed to analytically and accurately model emission through and over barriers associated with depletion layers, nanotip barriers, and MIM structures. The transmission probability for depletion layer and metal-insulator-metal (MIM) and metaloxide-semiconductor (MOS) barriers is accurately modeled as the electron energy exceeds the barrier height using approaches designed for rapid implementation demanded by simulation codes, and extensible to general barriers. The models supersede conventional thermal and field models in depletion and MIM/MOS barrier studies. Thermal-field methods are used to treat the transmission probability, and shape factor methods to treat the tunneling factor. Analytic formulae for current density are obtained. The methods ease device simulation and characterization of current-voltage relations for emerging technologically interesting barriers with better accuracy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2024

Point defects in CdTe and CdSeTe alloy: a first principles investigation with DFT+U

CdTe and its alloy CdSeTe are widely used in optoelectronic devices, such as radiation detectors and solar cells, due to their superior electrical properties. However, the formation of defects and defect complexes in these materials can significantly affect their performance. As a result, understanding the defect formation and recombination processes in CdTe and CdSeTe alloy is of great importance. In recent years, density functional theory (DFT) calculations have emerged as a powerful tool for investigating the properties of defects in semiconductors. In this paper, we use DFT+U calculations to comprehensively study the properties of intrinsic defects as well as extrinsic defects induced by commonly used dopants, such as Cu and group V elements, in CdTe and CdSeTe alloy. This work provides insights into the effects of these defects on the electrical and optical properties of the material.

14 SOLAR ENERGY↗
DOE OSTI2024

Inert Gas Element as Active Infrared‐Absorption Source and Donor in Silicon for Forbidden‐Wavelength Sensing

Intrinsic silicon (Si) is forbidden for infrared (IR) sensing at the communication wavelength like 1.31 or 1.55 µm due to the well‐known bandgap limitation. In this work, an unexpected physical picture of using argon (Ar) is identified, which is usually inert to the surrounding chemical environment and used as a protective agent in semiconductor processing, to overcome the IR‐sensing‐forbidden problem in Si. Here, in this work, it is shown by an analysis of a dynamic secondary ion mass spectrometer that such a Si, when exposed to laser pulse in Ar gas, can contain a very high dose of Ar up to 10 20 cm −3 even after 1300 days. First‐principles calculations, molecular dynamics, and Hall effect measurements reveal that, due to both steric and dynamic repulsions by Ar orbitals to Si dangling bonds, the Ar‐filled‐vacancy produces a much wider defect band inside the gap, which is not only responsible for strong infrared absorption, but also causes a significant increase in n‐type conductivity, both in line with experiments. The study proves that originally inert elements in fact can act as active impurities in semiconductors for advanced applications, which updates the current knowledge of defect physics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Time-Domain Extreme-Ultraviolet Diffuse Scattering Spectroscopy of Nanoscale Surface Phonons

Here, we report the observation of dynamic fringe patterns in the diffuse scattering of extreme ultraviolet light from surfaces, following femtosecond optical excitation. At each point on the detector, the diffuse scattering intensity exhibits oscillations at well-defined frequencies that correspond to surface phonons with wave vectors determined by the scattering geometry, indicating that the optical excitation generates coherent surface phonons propagating in all directions and spanning a wavelength range from 60 to 300 nm. This phenomenon is observed on a variety of samples, including single-layer and multilayer metal films, as well as bulk semiconductors. The measured surface phonon dispersions show good agreement with theoretical calculations. By comparing signal amplitudes from samples with different surface morphologies, we find that the excitation mechanism is linked to the natural surface roughness of the samples. However, the signal is still detectable on extremely smooth surfaces with subnanometer roughness. Our findings demonstrate a simple and effective method for optically exciting coherent surface phonons with nanoscale wavelengths on a wide range of solid samples and establish a foundation for surface phonon spectroscopy in a wave vector range well beyond the limit of conventional surface Brillouin scattering.

Capotondi, F. [Elettra-Sincrotrone Trieste (Italy)↗
DOE OSTI2023

Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)–based MWIR light emitters and detectors have been shown to outperform the state-of-the-art for commercial devices due to the low Auger recombination coefficient of bP. However, the scalability of these devices remains a challenge. Here, we report a bP ink formula that preserves the exceptional MWIR optoelectronic properties of bP to deposit centimeter-scale, uniform, and pinhole free films with a photoluminescence quantum yield higher than competing III-V and II-VI semiconductors with similar bandgaps at high excitation regime. As a proof of concept, we use bP ink as a “phosphor” on a red commercial light-emitting diode to demonstrate bright MWIR light emission. We also show that these films can be integrated into heterostructure device architectures with electron and hole selective contacts for direct-injected light emission and detection in MWIR.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Optical Processes behind Plasmonic Applications

Plasmonics is a revolutionary concept in nanophotonics that combines the properties of both photonics and electronics by confining light energy to a nanometer-scale oscillating field of free electrons, known as a surface plasmon. Generation, processing, routing, and amplification of optical signals at the nanoscale hold promise for optical communications, biophotonics, sensing, chemistry, and medical applications. Surface plasmons manifest themselves as confined oscillations, allowing for optical nanoantennas, ultra-compact optical detectors, state-of-the-art sensors, data storage, and energy harvesting designs. Surface plasmons facilitate both resonant characteristics of nanostructures and guiding and controlling light at the nanoscale. Plasmonics and metamaterials enable the advancement of many photonic designs with unparalleled capabilities, including subwavelength waveguides, optical nanoresonators, super- and hyper-lenses, and light concentrators. Alternative plasmonic materials have been developed to be incorporated in the nanostructures for low losses and controlled optical characteristics along with semiconductor-process compatibility. This review describes optical processes behind a range of plasmonic applications. It pays special attention to the topics of field enhancement and collective effects in nanostructures. The advances in these research topics are expected to transform the domain of nanoscale photonics, optical metamaterials, and their various applications.

2D materials↗
DOE OSTI2022

Considerations of Radiation-Hardened Electronics for Alpha Detectors in Molten Salt Reactors

Along with advanced generations of reactors quickly becoming reality, the need for instrumentation to provide reliable information for their safety and operation is also becoming relevant. Instrumentation-wise, molten salt reactors (MSRs) represent an especially challenging case in which detectors must survive extreme temperatures, high amounts of radiation, and a highly corrosive coolant. Adding to the complexity, tight material control and accounting must be maintained with any special nuclear material (SNM), a practice made more difficult by the nature of a loop of flowing fuel. Alpha spectroscopy offers a unique window into investigating the isotopic concentrations of actinides within just such a molten salt environment. The characteristic α emissions of specific actinide isotopes in the salt enable quantification of their concentrations. Semiconductor devices based on wide bandgap materials such as silicon carbide and gallium oxide can withstand the extreme temperatures within MSRs and offer good chemical stability with the corrosive salt. Collaborators at The Ohio State University are fabricating and testing a β gallium oxide α particle sensor that could identify actinide concentrations within the fuel salt to help improve the material control and accounting required for complicated system inherent to MSRs.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI1968

Kryptonate Hydrogen Detection System (Final Report)

A prototype model of a multipurpose instrument which demonstrates the applicability of the Kryptonate® technique for detecting hydrogen gas was developed. This report describes the construction of the instrument and presents a laboratory evaluation of its performance. Performance was excellent. The instrument was designed to detect hydrogen in air at concentrations of 0-3% by volume, and to detect hydrogen in nitrogen or other inert gas at concentrations of 0-10% by volume. Other detection levels (both higher and lower) could be set if required. Ultimate response times can be made of the order of 0.5 seconds. The instrument is an all solid state device operating from 120V 60 Hz power source. The instrument has been designed to enable modifications to be made with a minimum amount of difficulty.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗