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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.
While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.
We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.
We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.
The presentation will cover a variety of mitigation strategies that were developed for critical applications. An emphasis is placed on strengths and weaknesses per mitigation technique as it pertains to different FPGA device types.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
The presentation will cover a variety of mitigation strategies that were developed for critical applications. An emphasis is placed on strengths and weaknesses per mitigation technique as it pertains to different FPGA device types.
This is a NASA Electronics Parts and Packaging (NEPP) independent investigation to determine the single event destructive and transient susceptibility of the Microsemi RTG4 device (DUT).
Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks based on single particle event radiation testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means to FPGAs. Its all about understanding actual risks and not making assumptions.
We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.
This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This presentation will include information about Graphics Processor Units (GPUs) technology, NASA Electronic Parts and Packaging (NEPP) tasks, The test setup, test parameter considerations, lessons learned, collaborations, a roadmap, NEPP partners, results to date, and future plans.
In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.
Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.
In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.