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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Use of the Charge/Discharge (C/D) ratio to aument voltage limit (V sub T) charge control in the ERBS spacecraft

A 50-ampere hour nickel cadmium cell test pack was operated in a power profile simulating the orbit of the Earth Radiation Budget Satellite (ERBS). The objective was to determine the ability of the temperature compensated voltage limit (V sub T) charge control system to maintain energy balance in the half sine wave-type current profile expected of this mission. The four-cell pack (50 E) was tested at the Naval Weapons Support Center (NWSC) at Crane, Indiana. The ERBS evaluation test consisted of two distinct operating sequences, each having a specific purpose. The first phase was a parametric test involving the effect of V sub T level, temperature, and Beta angle on the charge/discharge (C/D) ratio, an indicator of the amount of overcharge. The second phase of testing made use of the C/D ratio limit to augment the V sub T charge limit control. When the C/D limit was reached, the current was switched from the taper mode to a C/67 (0.75 A) trickle charge. The use of an ampere hour integrator limiting the overcharge to a C/67 rate provided a fine tuning of the charge control technique which eliminated the sensitivity problems noted in the initial operating sequence.

Halpert, G.↗
DOE OSTI2021

The Role of Metal Substitution in Tuning Anion Redox in Sodium Metal Layered Oxides Revealed by X-Ray Spectroscopy and Theory

We investigate high-valent oxygen redox in the positive Na-ion electrode P2-Na 0.67-x [Fe 0.5 Mn 0.5 ]O 2 (NMF) where Fe is partially substituted with Cu (P2-Na 0.67-x [Mn 0.66 Fe 0.20 Cu 0.14 ]O 2 , NMFC) or Ni (P2-Na 0.67 -x[Mn 0.65 Fe 0.20 Ni 0.15 ]O 2 , NMFN). From combined analysis of resonant inelastic X-ray scattering and X-ray near-edge structure with electrochemical voltage hysteresis and X-ray pair distribution function profiles, we correlate structural disorder with high-valent oxygen redox and its improvement by Ni or Cu substitution. Density of states calculations elaborate considerable anionic redox in NMF and NMFC without the widely accepted requirement of an A-O-A' local configuration in the pristine materials (where A=Na and A'=Li, Mg, vacancy, etc.). We also show that the Jahn–Teller nature of Fe 4+ and the stabilization mechanism of anionic redox could determine the extent of structural disorder in the materials. These findings shed light on the design principles in TM and anion redox for positive electrodes to improve the performance of Na-ion batteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Effect of the neutral beam injector operational regime on the Alfven eigenmode saturation phase in DIII-D plasma

The aim of this study is to analyze the effect of the neutral beam injector (NBI) operation regime on the saturation phase of the Alfven Eigenmodes (AEs) in DIII-D plasma. Here, the analysis is done using the linear and nonlinear versions of the gyro-fluid code FAR3d. A set of parametric analyses are performed modifying the nonlinear simulation EP $β$ (NBI injection power), EP energy (NBI voltage) and the radial location of the EP density profile gradient (NBI radial deposition). The analysis indicates a transition from the soft (local plasma relaxation) to the hard MHD (global plasma relaxation) limit if the simulation EP $β$ $\unicode{x2A7E}$ $0.02$, leading to bursting MHD activity caused by radial AEs overlapping. MHD bursts cause an enhancement of the EP transport showing ballistic-like features as avalanche-like events. Simulations in the soft MHD limit show an increment of the EP density gradient as the EP $β$ increases. On the other hand, there is a gradient upper limit in the hard MHD limit, consistent with the critical-gradient behavior. AEs induce shear flows and zonal current leading to the deformation of the flux surfaces and the safety factor profile, respectively, particularly strong for the simulation in the hard MHD limit. Simulations in the hard MHD regime show a decrease of the AE frequency in the saturation phase; this is caused by the destabilization of a transitional mode between a $9/3-10/3$ TAE and a $9/3$ RSAE that may explain the AE frequency down-sweeping observed in some DIII-D discharges. Reducing the EP energy in the nonlinear simulations leads to a weakening of the plasma perturbation. On the other hand, increasing the EP energy causes the opposite effect. Nonlinear simulations of off-axis NBI profiles indicate a lower plasma perturbation as the EP density gradient is located further away from the magnetic axis.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Controlling cantilevered adaptive X-ray mirrors

Modeling the behavior of a prototype cantilevered X-ray adaptive mirror (held from one end) demonstrates its potential for use on high-performance X-ray beamlines. Similar adaptive mirrors are used on X-ray beamlines to compensate optical aberrations, control wavefronts and tune mirror focal distances at will. Controlled by 1D arrays of piezoceramic actuators, these glancing-incidence mirrors can provide nanometre-scale surface shape adjustment capabilities. However, significant engineering challenges remain for mounting them with low distortion and low environmental sensitivity. Finite-element analysis is used to predict the micron-scale full actuation surface shape from each channel and then linear modeling is applied to investigate the mirrors' ability to reach target profiles. Using either uniform or arbitrary spatial weighting, actuator voltages are optimized using a Moore–Penrose matrix inverse, or pseudoinverse, revealing a spatial dependence on the shape fitting with increasing fidelity farther from the mount.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

The Impact of Operational Strategies and Load Fluctuations on Anion Exchange Membrane Water Electrolyzer Degradation

This study reports on the durability of anion exchange membrane water electrolyzers (AEMWEs) at the cell level in a supporting electrolyte (1 M) and the impact of operational profiles on cell degradation. While constant load shows significant voltage loss, including a current hold at 1 A cm −2 and a potential hold at 2 V, it generally occurs in the first 70 h of testing. These losses are likely due to passivation altering site reactivity and cell kinetics, and are largely recoverable upon load cycling and diagnostics at the end of test. Furthermore, square and triangular-wave cycling do not show cell degradation and indicate that AEMWEs are not vulnerable to load cycling. When operating outside of this potential window (1.45–2 V), cell voltage decay rates markedly increase and the losses are not recoverable. This includes a current density hold at 4.0 A cm −2 with high cell voltages (>2.4 V for test duration) and cycling between 0 and 2 V to simulate start–stop, where more than a 50% loss in current density occurs over 50 h. The findings presented here demonstrate the high durability of AEMWEs, particularly when operating with load fluctuations, and may allow for durability advantages compared to iridium and proton exchange membrane systems.

08 HYDROGEN↗
NASA NTRS1978

Test-vehicle cycle programmer

Instrument reduces manpower needed for testing electric powered vehicles. Device has dual scale that allows operator to compare actual speed with preprogrammed test speed. Features include large meter, buzzer, packaging to allow ready interchange of memories with different profiles, small size, minimal current drain, and reverse supply voltage protection.

Lesco, D. J.↗
DOE OSTI2021

Performance of microchannel plate based detectors for <25 keV x rays: Monte Carlo simulations and comparisons with experimental results

We present the results of Monte Carlo simulations of the microchannel plate (MCP) response to x rays in the 250 eV to 25 keV energy range as a function of both x-ray energy and impact angle and their comparisons with the experimental results from the X8A beamline at the National Synchrotron Light Source at Brookhaven National Laboratory. Incoming x rays interact with the lead glass of the microchannel plate, producing photoelectrons. Transport of the photoelectrons is neglected in this model, and it is assumed that photoelectrons deposit all their energy at the point they are created. This deposition leads to the generation of many secondary electrons, some fraction of which diffuse to the MCP pore surface where they can initiate secondary electron cascades in the pore under an external voltage bias. X-ray penetration through multiple MCP pore walls is increasingly important above 5 keV, and the effect of this penetration on MCP performance is studied. In agreement with past measurements, we find that the dependence of MCP sensitivity with angle relative to the pore bias changes from a cotangent dependence to angular independence and then proceeds to a secant dependence as the x-ray energy increases. We also find that with the increasing x-ray energy, the MCP gain sensitivity as a function of bias voltage decreases. The simulations also demonstrate that for x rays incident normal to the MCP surface, spatial resolution shows little dependence on the x-ray energy but degrades with the increasing x-ray energy as the angle of incidence relative to the surface normal increases. This agrees with experimental measurements. Simulation studies have also been completed for MCPs gated with a subnanosecond voltage pulse. In this work, we find that the optical gate profile width increases as the x-ray energy is increased above 5 keV, a consequence of increased x-ray penetration at energies >5 keV. Simulations of the pulsed dynamic range show that the dynamic range varies between ~100 and 1000 depending on x-ray energy and peak voltage.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Microgrid Service Restoration Incorporating Unmonitored Automatic Voltage Controllers and Net Metered Loads

Islanded microgrids may experience voltage and frequency instability due to uncontrolled state changes of voltage regulation devices and inaccurate demand forecasts. Uncontrolled state changes can occur if optimal microgrid restoration and dispatch algorithms, used for generating control commands for distributed energy resources, do not incorporate the behavior of automatic controllers of voltage regulation devices. Inaccurate demand forecasts may be encountered since post-outage demand of behind-the-meter net metered (NM) loads can vary significantly from their historical NM profiles. Here, this paper proposes an optimization formulation which allows optimal control of voltage regulators and capacitor banks without remote control and communication capabilities. A generalized demand model for NM loads is proposed which incorporates the cold load pickup phenomenon and their time varying post-outage demand in accordance with the IEEE 1547 standard. The time dependent optimal control formulation and the NM demand model are integrated in a sequential microgrid restoration algorithm by linearization of the involved logic propositions. A detailed case study on the unbalanced IEEE 123-node test system in OpenDSS validates the effectiveness of the proposed approach.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. Finally, this smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Unintended gas breakdowns in narrow gaps of advanced plasma sources for semiconductor fabrication industry

Occurrence of unintended gas breakdown in the narrow gaps of plasma processing chambers is one of the critical challenges in developing advanced plasma sources. Here, we present a combined experimental and theoretical study of unintended discharges in the narrow gaps of plasma processing chambers and report significant drop of the gas breakdown voltage in the presence of a background plasma facing the gap. Experimentally measured breakdown voltages decrease in subsequent breakdown events due to wall erosion caused by the discharge. Therefore, preventing and mitigating the first discharge is of paramount importance. An analysis of kinetic simulation results indicates that the charged particle influx from the background plasma in the processing chamber into the gap is responsible for the onset of early breakdown: higher charged particle density within the gap modifies the electric field profile, allowing unintended breakdowns to occur at a significantly reduced threshold voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗
DOE OSTI2026

Brittle-to-Ductile Transition Temperature Decreases at the Microscale in Muscovite Mica

Characterizing the structural and chemical transitions of muscovite mica across various scales and thermal profiles is essential for ensuring the reliability of high-voltage power insulation, aerospace thermal barriers, and nanoscale semiconductor substrates under extreme operational stress. Here, we investigate notch fracture toughness $K^{n}_{Ic}$ of muscovite mica as a function of feature size w and temperature T with microscale shear testing. $K^{n}_{Ic}$ decreased and then stayed constant as w increased, likely from fabrication-induced changes to the microstructure and roughness. Moreover, $K^{n}_{Ic}$ initially decreased and then increased as temperature T increased, with the reversal in trend indicative of a brittle-to-ductile transition. Complementary Raman spectroscopy and molecular dynamics showed that the observed trends were due to an increase in bond lengths and a decrease in critical stresses/strains. In comparing the microscale results to macroscale counterparts, it was surmised that the decrease in brittle-to-ductile transition temperature was due to an increase in the dehydroxylation rate.

DelRio, Frank W. [Sandia National Laboratories (SN↗
DOE OSTI2020

Optimized Highly Efficient SSCB Using Organic Substrate Packaging for Electric Vehicle Applications

Solid State Circuit Breakers (SSCBs) are an attractive protection solution for their arcless current interruption and fast actuation speeds over mechanical breakers. This paper proposes a Bidirectional SSCB (BSSCB) with a thermally defined and digitally controlled current time profile for fault protection in EV and other low-voltage DC systems. The paper proposes an organic packaging approach utilizing flex circuitry to develop a reliable, cost-effective power module for BSSCBs. The paper studies transient heat transfer in the power modules using finite element analysis (FEA). An RC themal ladder network is extracted to define a fusing curve. To demonstrate and verify the design, a 1kV/50 A SiC MOSFET BSSCB prototype is fabricated and tested, having a power density of 60 W/cm3 and 4x reduction in form factor over presently researched breakers. Also, given are results for 750 V/150 A operation showing interruption in 2.4 μs.

organic power packaging↗
NASA NTRS1972

A 2000-Hour Durability Test of a 5-Centimeter Diameter Mercury Bombardment Ion Thruster

A 2000-hour durability test of a modified Hughes SIT-5 (Structurally Integrated Thruster, 5 cm) was conducted at the Lewis Research Center. The thruster operated with a translating screen thrust vector grid locked in position for 10 deg beam deflection. The test was essentially continuous except for seven stoppages of beam current. The neutralizer keeper voltage and thruster floating potential increased slightly with time. Performance profiles and maps of thruster characteristics were obtained at 453 and 2023 hours into the test. Overall efficiency was nearly constant at 31 - 32 percent, and operating characteristics were similar at both points in the test. A post-shutdown inspection showed negligible erosion damage to the accelerator and cathode baffle. Some erosion was found in the aperture of the neutralizer cathode.

Nakanishi, S.↗
NASA NTRS1977

ITOS power system design

A brief description of the ITOS power systems is presented. The descriptions are from viewgraphs shown to the participants of the Workshop. A block diagram of ITOS power supply subsystem is presented along with graphs representing: ITOS voltage limit versus temperature; and battery charge-discharge current profiles over an orbit period.

Obenschain, A. F.↗
NASA NTRS1983

Development of metallization process: FSA project, cell and module formation research area

This experiment is involved in determining bulk resistivity values for different past concentrations. Experiments were performed on silicon Cz and non-Cz wafers. To determine bulk resistivity more accurately, pastes were printed on ceramic substrates. Contact resistance was determined by measuring the voltage drop at constant current. Because of irregularity of grid profiles, accurate determination of cross sections of grid lines is difficult. The bulk resistivity is accurate when the resistivity of the metallization is much less than that of the layer beneath it. When the resistivity of the metal approaches that of the substrate, the actual resistivity will be larger than the measured value.

Garcia, A., III↗