Displacement formulations of the thin elastic shell equations.
Displacement formulations of first order linear thin elastic shell equations in terms of stress resultant and middle surface, using modified Kirchhoff hypothesis
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Displacement formulations of first order linear thin elastic shell equations in terms of stress resultant and middle surface, using modified Kirchhoff hypothesis
Circumferential displacement and shearing stresses in out-of-plane elasticity problem for solid torus
Adaptation to prismatic displacements - hand position and target location
Adaptation to displaced and delayed visual feedback during hand movement
Altered reaching following adaptation to optical displacement of hand
The map of the co-seismic displacement field generated by interferometric processing of Synthetic Aperture Radar (SAR) images taken before and after the June 28, 1992 Landers earthquake sequence brings new insights into the nature of deformation caused by these earthquakes.
A series of displacement transducers have been demonstrated which are based on the detection of electrons that quantum-mechanically tunnel across a narrow gap between electrodes.
As displacement metrology accuracy improves, general relativistic effects will become noticeable. Metrology gauges developed for the Space Interferometry Mission were used to search for locally anisotropic space-time, with a null result at the 10 to the negative tenth power level.
As displacement metrology accuracy improves, general relativistic effects will become noticeable. Metrology gauges developed for the Space Interferometry Mission, were used to search for locally anisotropic space-time, with a null result at the 10 to the negative 10th power level.
Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.
We compare differences in parametric degradation for CCDs irradiated to the same displacement damage dose with 10-MeV and 50-MeV electrons. Charge transfer efficiency degradation was observed to not scale with NIEL for small signals.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Total ionizing dose and displacement damage testing is performed to characterize and determine the feasibility of candidate electronics for NASA spacecraft and program use. AEROSPACE ENVIRONMENTS
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.