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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Indium antimonide crystal growth experiment M562

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach.

Gatos, H. C.↗
NASA NTRS1978

Optimizing indium antimonide (InSb) detectors for low background operation

The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.

Treffers, R. R.↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗
NASA NTRS1981

Advanced indium antimonide monolithic charge coupled infrared imaging arrays

The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.

Koch, T. L.↗
NASA NTRS1984

Astronomical camera using a high-performance indium antimonide linear array

The development and current status of InSb line arrays for astronomy are reviewed. Instrument concepts are currently being developed for an infrared instrument for NASA's Space Telescope which would use such detectors for both spectroscopy and imaging. Preliminary performance measurements are given for a simple pushbroom camera, using a 128-element line array, designed for operation on the 24-inch Cassegrain telescope at the JPL Table Mountain Observatory. The design and construction of the camera are described.

Herring, M.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells

Using a fairly comprehensive model, a parametric variation study was performed of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Calculations show that with good-quality epitaxial material, a beginning-of-life efficiency of about 20.3 precent at 1AM0, 25 C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected effect on the performance parameters of radiation damage by 1-MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells.

Goradia, Chandra↗
NASA NTRS1989

Progress in indium phosphide solar cell research

Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations.

Weinberg, Irving↗