SEARCH · Search NASA

Results for “SILICON OXIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14

All sources NASA NTRS DOE OSTI

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1981

A spectroscopic study of intermediates in the condensation of refractory smokes - Matrix isolation experiments of SiO

The infrared and Raman spectra of N2 matrix-isolated silicon oxides were investigated. The vibrational frequencies of SiO, Si2O2, and Si3O3 were identified and assigned on the basis of normal coordinate analyses. Heating the solid to approximately 50 K (evaporating the matrix) leaves a residue whose infrared spectrum is identical to that of a smoke condensed at ambient temperatures. Further heating of the sample to approximately 500 K leads to significant changes in the band shapes. Investigations of the infrared spectra at several stages of the diffusion process enable a mechanism to be proposed for the transition from molecular properties to those of the residue (bulk) material, which has been characterized as Si2O3.

Khanna, R. K.↗

NASA NTRS1984

Improved Radiative Control of Ribbon Growth

Shield modifications enhance growth rate while reducing silicon oxide formation. Control of dendritic-web crystal growth requires precise control of web temperature profile. Achieved by using series of thermal radiation shields to control thermal-radiation field in region where melt solidifying onto crystal ribbon being pulled from melt.

Mchugh, J. P.↗

NASA NTRS1984

An evaluation of the directed flow graph methodology

The applicability of the Directed Graph Methodology (DGM) to the design and analysis of special purpose image and signal processing hardware was evaluated. A special purpose image processing system was designed and described using DGM. The design, suitable for very large scale integration (VLSI) implements a region labeling technique. Two computer chips were designed, both using metal-nitride-oxide-silicon (MNOS) technology, as well as a functional system utilizing those chips to perform real time region labeling. The system is described in terms of DGM primitives. As it is currently implemented, DGM is inappropriate for describing synchronous, tightly coupled, special purpose systems. The nature of the DGM formalism lends itself more readily to modeling networks of general purpose processors.

Snyder, W. E.↗

NASA NTRS1984

Opacification of high temperature fibrous insulation

A study was conducted to determine the merits of adding particulate materials to silica fiber felts to increase their resistance to the passage of thermal radiation. Laboratory samples containing 5, 10, and 15 percent of chromium oxide, silicon carbide, and titanium dioxide were prepared and evaluated in accordance with ASTM C-518 thermal conductivity test method at 425 C (800 F) mean temperature. The titania particles averaging 3-4 micrometers in diameter were found to be the most effective. This was followed by a short plant run, in order to confirm the initial results on the laboratory samples. These samples were tested according to ASTM C-201 High Temperature Calorimeter from 93 C to 760 C (200 F to 1400 F) mean temperature. The ten percent by weight of titania resulted in an optimum effectiveness, and reduced the conductivity over 20% at 760 C (1400 F).

Miller, W. C.↗

NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗

NASA NTRS1985

Orbital atomic oxygen effects on thermal control and optical materials - STS-8 results

The effects of exposing 23 specimens of optical and thermal control materials to space at 120 km altitude for over 40 hrs during the STS-8 mission are discussed. Ten samples of paint targeted for the Space Telescope (ST) and the Tethered Satellite were exposed, and included polyurethane, oxide, silicone, and glossy black and white samples which were scanned for alterations in the optical properties after being retrieved. Nine mirror-type materials were also investigated, along with silver specimens typical of solar cell interconnects. The oxygen flow at the orbital altitude was 3.5 x 10 to the 20th atoms/cu cm. The exposures caused no degradation of the magnesium fluoride mirror coatings, while the Kapton coating for the ST solar cell panels showed evidence of losing thickness. The Ag solar cell contacts will require coatings to extend their lifetimes. Overcoatings were also proven necessary for inhibiting degradation of painted surfaces.

Whitaker, A. F.↗

NASA NTRS1985

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Buehler, M. G.↗

NASA NTRS1985

Protection of solar array blankets from attack by low earth orbital atomic oxygen

The ram impact of low earth orbital atomic oxygen causes oxidation of spacecraft materials including polymers such as polyimides. The rate of oxidation is sufficiently high to potentially compromise the long term durability of Kapton solar array blankets. Ion beam sputter deposited atomic oxygen protective coatings of aluminum oxide, silicon dioxide, and codeposited silicon dioxide with small amounts of polytetrafluoroethylene were evaluated both in RF plasma asher tests and in low earth orbit. Deposition techniques, mechanical properties, and atomic oxygen protection performance are presented.

Banks, Bruce A.↗

NASA NTRS1988

Antireflection/Passivation Step For Silicon Cell

New process excludes usual silicon oxide passivation. Changes in principal electrical parameters during two kinds of processing suggest antireflection treatment almost as effective as oxide treatment in passivating cells. Does so without disadvantages of SiOx passivation.

Crotty, Gerald T.↗

NASA NTRS1987

Circumstellar radio molecular lines

Radio molecular lines appear to be useful probes into the stellar environment. Silicon oxide masers provide information on the physical conditions in the immediate vicinity of the stellar photosphere. Valuable information on the physics operating in the envelope of IRC + 10216 was recently obtained by high sensitivity observations and detailed theoretical analyses. Infrared speckle interferometry in the molecular lines and in the continuum is helpful in the investigation of the inner region of the envelope. These techniques are discussed in terms of late-type star mass loss.

NGUYEN-QUANG-RIEU↗

NASA NTRS1988

Diffraction imaging (topography) with monochromatic synchrotron radiation

Structural information of special interest to crystal growers and device physicists is now available from high resolution monochromatic synchrotron diffraction imaging (topography). In the review, the importance of superior resolution in momentum transfer and in space is described, and illustrations are taken from a variety of crystals: gallium arsenide, cadmium telluride, mercuric iodide, bismuth silicon oxide, and lithium niobate. The identification and understanding of local variations in crystal growth processes are shown. Finally, new experimental opportunities now available for exploitation are indicated.

Steiner, Bruce↗

NASA NTRS1987

Multielement mapping of alpha-SiC by scanning Auger microscopy

Fine second-phase particles, numerous in sintered alpha-SiC, were analyzed by scanning Auger microscopy and conventional techniques. The Auger analysis utilized computer-controlled data acquisition, multielement correlation diagrams, and a high spatial resolution of 100 nm. This procedure enabled construction of false color maps and the detection of fine compositional details within these particles. Carbon, silicon oxide, and boron-rich particles (qualitatively as BN or B4C) predominated. The BN particles, sometimes having a carbon core, are believed to result from reaction between B4C additives and nitrogen sintering atmospheres.

Browning, Ray↗

NASA NTRS1988

Technologies for protection of the Space Station power system surfaces in atomic oxygen environment

Technologies for protecting Space Station surfaces from degradation caused by atomic oxygen are discussed, stressing protection of the power system surfaces. The Space Station power system is described and research concerning the solar array surfaces and radiator surfaces is examined. The possibility of coating the solar array sufaces with a sputter deposited thin film of silicon oxide containing small concentrations of polytetrafluoroethylene is presented. Hexamethyldisiloxane coating for these surfaces is also considered. For the radiator surfaces, possible coatings include silver teflon thermal coating and zinc orthotitanate.

Nahra, Henry K.↗

NASA NTRS1988

Microgravity nucleation and particle coagulation experiments support

Researchers at NASA Goddard Space Flight Center have embarked on a program to study the formation and growth of cosmic grains. This includes experiments on the homogeneous nucleation of refractory vapors of materials such as magnesium, lead, tin, and silicon oxides. As part of this program, the Chemical Engineering Department of the University of Virginia has undertaken to develop a math model for these experiments, to assist in the design and construction of the apparatus, and to analyze the data once the experiments have begun. Status Reports 1 and 2 addressed the design of the apparatus and the development of math models for temperature and concentration fields. The bulk of this report discusses the continued refinement of these models, and the assembly and testing of the nucleation chamber along with its ancillary equipment, which began in the spring of 1988.

Lilleleht, L. U.↗

NASA NTRS1990

Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

Holanda, Raymond↗

NASA NTRS1990

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

The refrigeration of superconductors in space poses a challenging problem. The problem could be less severe if superconducting materials would not have to be cooled when not in use. Thin films of the YBa2Cu3O(7-x) (YBCO) superconductor were subjected to thermal cycling, which was carried out to simulate a large number of eclipses of a low earth orbit satellite. Electrical measurements were performed to find the effect of the temperature cycling. Thin films of YBCO were formed by coevaporation of Y, BaF2, and Cu and postannealing in wet oxygen at 850 C for 3.5 h. The substrates used were (100) SrTiO3, polycrystalline alumina, and oxidized silicon; the last two have an evaporated zirconia layer. Processing and microstructure studies of these types of films have been published. THe zero resistance transition temperatures of the samples used in this study were 91, 82, and 86 K, respectively. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were: the zero resistance transition temperature, the 10 to 90 percent transition width, and the room temperature resistance, normalized to that measured before temperature cycling. The results for two samples are presented. Each sample had a cumulative exposure. Cycling in atmospheric pressure nitrogen was performed at a rate of about 60 cycles per day, whereas in vacuum the rate was only about 10 cycles per day. The results indicate only little or no changes in the parameters measured. Degradation of superconducting thin films of YBCO has been reported due to storage in nitrogen. It is believed that the relatively good performance of films after temperature cycling is related to the fact that BaF2 was used as an evaporation source. The latest result on extended temperature cycling indicates significant degradation. Further tests of extended cycling will be carried out to provide additional data and to clarify this preliminary finding.

Mogro-Campero, A.↗