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We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
Space poses a variety of radiation hazards. These hazards pose different risks for different missions depending on the mission environment, duration and requirements. This presentation presents a brief look at several radiation related hazards, including destructive and nondestructive Single-Event Effect, Total Ionizing Dose, Displacement Damage and Spacecraft Charging. The temporal and spatial characteristics for the environments of concern for each are considered.
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.
The purpose of this test campaign is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9257-EP from Analog Devices.
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.
The Radiation Hardened Electronics for Space Environments (RHESE) project endeavors to advance the current state-of-the-art in high-performance, radiation-hardened electronics and processors, ensuring successful performance of space systems required to operate within extreme radiation and temperature environments. Because RHESE is a project within the Exploration Technology Development Program (ETDP), RHESE's primary customers will be the human and robotic missions being developed by NASA's Exploration Systems Mission Directorate (ESMD) in partial fulfillment of the Vision for Space Exploration. Benefits are also anticipated for NASA's science missions to planetary and deep-space destinations. As a technology development effort, RHESE provides a broad-scoped, full spectrum of approaches to environmentally harden space electronics, including new materials, advanced design processes, reconfigurable hardware techniques, and software modeling of the radiation environment. The RHESE sub-project tasks are: SelfReconfigurable Electronics for Extreme Environments, Radiation Effects Predictive Modeling, Radiation Hardened Memory, Single Event Effects (SEE) Immune Reconfigurable Field Programmable Gate Array (FPGA) (SIRF), Radiation Hardening by Software, Radiation Hardened High Performance Processors (HPP), Reconfigurable Computing, Low Temperature Tolerant MEMS by Design, and Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments. These nine sub-project tasks are managed by technical leads as located across five different NASA field centers, including Ames Research Center, Goddard Space Flight Center, the Jet Propulsion Laboratory, Langley Research Center, and Marshall Space Flight Center. The overall RHESE integrated project management responsibility resides with NASA's Marshall Space Flight Center (MSFC). Initial technology development emphasis within RHESE focuses on the hardening of Field Programmable Gate Arrays (FPGA)s and Field Programmable Analog Arrays (FPAA)s for use in reconfigurable architectures. As these component/chip level technologies mature, the RHESE project emphasis shifts to focus on efforts encompassing total processor hardening techniques and board-level electronic reconfiguration techniques featuring spare and interface modularity. This phased approach to distributing emphasis between technology developments provides hardened FPGA/FPAAs for early mission infusion, then migrates to hardened, board-level, high speed processors with associated memory elements and high density storage for the longer duration missions encountered for Lunar Outpost and Mars Exploration occurring later in the Constellation schedule.
Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on April 28th, 2018 using 200-MeV protons. This testing trip was purposed to provide additional radiation susceptibility data from payloads compiled in Q3FY18. While not all radiation-induced errors are critical, the effects on the application need to be considered. More so, failure of the device and an inability to reset itself should be considered detrimental to the application. Radiation effects on electronic components are a significant reliability issue for systems intended for space.
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of the Intel Optane Memory device (SSD) containing the 3D Xpoint phase change memory (PCM) technology. This test is supported by the NASA Electronics Parts and Packaging Program (NEPP).
Single event effects and many other spacecraft anomalies are caused by positively charged high energy particles impinging on the vehicle and its component parts. Reviewed here are the current knowledge of the interplanetary particle environment in the energy ranges that are most important for these effects. State-of-the-art engineering models are briefly described along with comments on the future work required.
Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results.
When performing a single event effect (SEE) test during a test campaign, flexibility and out of the box thinking is often required for unexpected and unplanned events.