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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
The presentation will cover a variety of mitigation strategies that were developed for critical applications. An emphasis is placed on strengths and weaknesses per mitigation technique as it pertains to different FPGA device types.
This is a NASA Electronics Parts and Packaging (NEPP) independent investigation to determine the single event destructive and transient susceptibility of the Microsemi RTG4 device (DUT).
Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks based on single particle event radiation testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means to FPGAs. Its all about understanding actual risks and not making assumptions.
We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.
This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This presentation will include information about Graphics Processor Units (GPUs) technology, NASA Electronic Parts and Packaging (NEPP) tasks, The test setup, test parameter considerations, lessons learned, collaborations, a roadmap, NEPP partners, results to date, and future plans.
In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.
Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.
In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.
This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
Testing of an Intel 14nm desktop processor was conducted under proton irradiation. We share lessons learned, demonstrating that complex devices beget further complex challenges requiring practical and theoretical investigative expertise to solve.
Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.
A standardized test method has been created to characterize and stress graphics processing units (GPU) during radiation effects testing.
This presentation will include information about Graphics Processing Unit (GPU) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.