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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
Single-Event Effects (SEE) testing was conducted on the AMD e9173 Graphics Processor Unit (GPU). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center.
The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.
This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.
This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
Analyses of EPS (electrical power system) interactions with the LEO (low earth orbit) environment are described. The results of these analyses will support EPS design so as to be compatible with the natural and induced environments and to meet power, lifetime, and performance requirements. The environmental impacts to the Space Station Freedom EPS include aerodynamic drag, atomic oxygen erosion, ultraviolet degradation, VXB effect, ionizing radiation dose and single event effects, electromagnetic interference, electrostatic discharge, plasma interactions (ion sputtering, arcing, and leakage current), meteoroid and orbital debris threats, thermal cycling effects, induced current and voltage potential differences in the SSF due to induced electric field, and contamination degradation.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.
Space poses a variety of radiation hazards. These hazards pose different risks for different missions depending on the mission environment, duration and requirements. This presentation presents a brief look at several radiation related hazards, including destructive and nondestructive Single-Event Effect, Total Ionizing Dose, Displacement Damage and Spacecraft Charging. The temporal and spatial characteristics for the environments of concern for each are considered.
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.
The purpose of this test campaign is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9257-EP from Analog Devices.
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.