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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14

Ultrasonic angle beam standard reflector

A method that provides an impression profile in a reference standard material utilized in inspecting critically stressed components with pulsed ultrasound is described. A die stamp having an I letter is used to impress the surface of a reference material. The die stamp is placed against the surface and struck with an inertia imparting member to impress the I in the reference standard material. Upset may appear on the surface as a result of the impression and is removed to form a smooth surface. The stamping and upset removal is repeated until the entire surface area of a depth control platform on the die stamp uniformly contacts the material surface. The I impression profile in the reference standard material is utilized for reflecting pulsed ultrasonic beams for inspection purposes.

Berry, R. F., Jr.↗

Effects of space radiation on electronic microcircuits

The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.

Kolasinski, W. A.↗

Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

The authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).

Stassinopoulos, E. G.↗

Radiation response issues for infrared detectors

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Kalma, Arne H.↗

Alpha-particle sensitive test SRAMs

A bench-level test is being developed to evaluate memory-cell upsets in a test SRAM designed with a cell offset voltage. This offset voltage controls the critical charge needed to upset the cell. The effect is demonstrated using a specially designed 2-micron n-well CMOS 4-kb test SRAM and a Po-208 5.1-MeV 0.61-LET alpha-particle source. This test SRAM has been made sensitive to alpha particles through the use of a cell offset voltage, and this has allowed a bench-level characterization in a laboratory setting. The experimental data are linked to a alpha-particle interaction physics and to SPICE circuit simulations through the alpha-particle collection depth. The collection depth is determined by two methods and found to be about 7 micron. In addition, alpha particles that struck outside the bloated drain were able to flip the SRAM cells. This lateral charge collection was observed to be more than 6 micron.

Buehler, M. G.↗

A new method for using Cf-252 in SEU testing

A system using Cf-252 and associated nuclear instrumentation has determined the single-event upset (SEU) cross section versus linear energy transfer (LET) curve for several 2K x 8 static random access memories (SRAMs). The Cf-252 fission fragments pass through a thin-film organic scintillator detector (TFD) on the way to the device under test (DUT). The TFD provides energy information for each transiting fragment. Data analysis provides the energy of the individual ion responsible for each SEU; thus, separate upset cross sections can be developed for different energy and mass regions of the californium spectrum. This californium-based device is quite small and fits onto a bench top. It provides a convenient and inexpensive supplement or alternative to accelerator and high-altitude/space SEU testing.

Costantine, A.↗

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗

SEU hardened memory cells for a CCSDS Reed-Solomon encoder

A design technique to harden CMOS memory circuits against single event upset (SEU) in the space environment is reported. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and flip-flop design are presented to demonstrate the method. The flip-flop was used in the control circuitry for a Reed-Solomon encoder designed for the Space Station and Explorer platforms.

Whitaker, Sterling↗

A monitor for the laboratory evaluation of control integrity in digital control systems operating in harsh electromagnetic environments

This paper presents a strategy for dynamically monitoring digital controllers in the laboratory for susceptibility to electromagnetic disturbances that compromise control integrity. The integrity of digital control systems operating in harsh electromagnetic environments can be compromised by upsets caused by induced transient electrical signals. Digital system upset is a functional error mode that involves no component damage, can occur simultaneously in all channels of a redundant control computer, and is software dependent. The motivation for this work is the need to develop tools and techniques that can be used in the laboratory to validate and/or certify critical aircraft controllers operating in electromagnetically adverse environments that result from lightning, high-intensity radiated fields (HIRF), and nuclear electromagnetic pulses (NEMP). The detection strategy presented in this paper provides dynamic monitoring of a given control computer for degraded functional integrity resulting from redundancy management errors, control calculation errors, and control correctness/effectiveness errors. In particular, this paper discusses the use of Kalman filtering, data fusion, and statistical decision theory in monitoring a given digital controller for control calculation errors.

Belcastro, Celeste M.↗

Low power SEU immune CMOS memory circuits

The authors report a design improvement for CMOS static memory circuits hardened against single event upset (SEU) using a recently proposed logic/circuit design technique. This improvement drastically reduces static power consumption, reduces the number of transistors required in a D flip-flop design, and eliminates the possibility of capturing an upset state in the slave section during a clock transition.

Liu, M. N.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗

Experience, lessons learned and methodology in the design of space systems to accommodate total dose and SEU effects

We now have considerable experience with successfully designing science systems to function properly, even during and after exposure to ionizing radiation approaching one Megarad, and during large solar particle events with substantial high Z fluxes such as the events that happened in August, 1972 and in the fall of 1989. Nevertheless, with changing device dimensions and properties, newer technologies and new applications, new problems arise. Some recent basic research has shed light on these problems and pointed the way to better diagnostic tests. In the case of single event upsets, clearly one cannot always accurately predict upset probabilities simply by knowing the quiescent Linear Energy Transfer (LET) threshold and the asymptotic cross-section of the device.

Trainor, James H.↗

The search for materials to mitigate spacecraft charging

As spacecraft orbit the earth, they encounter a variety of particles and radiation. Charged particles are common enough that a spacecraft can collect substantial charges on its surfaces. If these charges are not bled off, they can accumulate until electrostatic discharges occur between a charged surface and some lower-potential location on the craft. Electrostatic discharge (ESD) is the suspected culprit in a number of spacecraft failures. Silverized Teflon film has become the standard heat-reflecting outer layer of spacecraft because of its flexibility, chemical inertness, and low volatiles content. However, as spacecraft are designed to operate in orbits with greater probability of accumulating enough ions and electrons to create ESD, the Teflon-based thermal control blankets are becoming a liability. Unless stringent (and sometimes burdensome) shielding measures are taken, ESD can upset delicate electronic systems by upsetting or destroying components, interfering with radio signals, garbling internal instructions, and so on. As orbits become higher and more eccentric, as electronics become more sensitive, and as fault-free operation becomes more crucial, it is becoming necessary to find a replacement for silver/Teflon that has comparable strength, flexibility and chemical inertness, as well as a much lower potential for ESD. This is a report of the steps taken toward the goal of selecting a replacement for silver/Teflon during the Summer of 1995. It is a condensation of a much larger report available on request from the author. Three tasks were undertaken. Task 1 was to specify desirable properties for thermal control blankets. The second task was to collect data on materials properties from the literature and organize into a format useful for identifying candidate materials. The third task was to identify candidate materials and begin testing.

Losure, Nancy S.↗

Current Radiation Issues for Programmable Elements and Devices

The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.

Katz, Richard↗

FPGAs in Space Environment and Design Techniques

This viewgraph presentation gives an overview of Field Programmable Gate Arrays (FPGA) in the space environment and design techniques. Details are given on the effects of the space radiation environment, total radiation dose, single event upset, single event latchup, single event transient, antifuse technology and gate rupture, proton upsets and sensitivity, and loss of functionality.

Katz, Richard B.↗

Development of a Dynamically Scaled Generic Transport Model Testbed for Flight Research Experiments

This paper details the design and development of the Airborne Subscale Transport Aircraft Research (AirSTAR) test-bed at NASA Langley Research Center (LaRC). The aircraft is a 5.5% dynamically scaled, remotely piloted, twin-turbine, swept wing, Generic Transport Model (GTM) which will be used to provide an experimental flight test capability for research experiments pertaining to dynamics modeling and control beyond the normal flight envelope. The unique design challenges arising from the dimensional, weight, dynamic (inertial), and actuator scaling requirements necessitated by the research community are described along with the specific telemetry and control issues associated with a remotely piloted subscale research aircraft. Development of the necessary operational infrastructure, including operational and safety procedures, test site identification, and research pilots is also discussed. The GTM is a unique vehicle that provides significant research capacity due to its scaling, data gathering, and control characteristics. By combining data from this testbed with full-scale flight and accident data, wind tunnel data, and simulation results, NASA will advance and validate control upset prevention and recovery technologies for transport aircraft, thereby reducing vehicle loss-of-control accidents resulting from adverse and upset conditions.

Jordan, Thomas↗

Effects of target fragmentation on evaluation of LET spectra from space radiation in low-earth orbit (LEO) environment: impact on SEU predictions

Recent improvements in the radiation transport code HZETRN/BRYNTRN and galactic cosmic ray environmental model have provided an opportunity to investigate the effects of target fragmentation on estimates of single event upset (SEU) rates for spacecraft memory devices. Since target fragments are mostly of very low energy, an SEU prediction model has been derived in terms of particle energy rather than linear energy transfer (LET) to account for nonlinear relationship between range and energy. Predictions are made for SEU rates observed on two Shuttle flights, each at low and high inclination orbit. Corrections due to track structure effects are made for both high energy ions with track structure larger than device sensitive volume and for low energy ions with dense track where charge recombination is important. Results indicate contributions from target fragments are relatively important at large shield depths (or any thick structure material) and at low inclination orbit. Consequently, a more consistent set of predictions for upset rates observed in these two flights is reached when compared to an earlier analysis with CREME model. It is also observed that the errors produced by assuming linear relationship in range and energy in the earlier analysis have fortuitously canceled out the errors for not considering target fragmentation and track structure effects.

STS-51 Shuttle Project↗