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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SIR Glass Test Vehicle Designed to Characterize Process Materials

The exposure to harsh environments can result in reliability issues on highly dense electronic packages and circuit assemblies. One area of concern is electrochemical failure mechanisms caused by electrolytic corrosion, electrochemical migration (dendrites), and leakage currents under humid conditions. These no-fault and no-trouble found failure points are challenging to detect and to perform process control during the assembly process. The focus of this research centers on metallizing glass surface insulation resistance test vehicles to characterize materials on electronic packages and components that exhibit the highest risk of failure due to material interactions and process residues. Glass test vehicles provide a visual representation of materials when they are exposed to moisture content in the air. Harsh environments can cause material interactions resulting in morphology changes, opening, and release of active components. A transparent test vehicle is highly functional for environmental stress testing under temperature, humidity, and bias. The designed experiment will evaluate the effects of material and process residues that can undergo changes in behavior during application, which leads to local failures.

Capen, Bill↗
DOE OSTI2024

Predictive modeling of NSTX discharges with the updated multi-mode anomalous transport module

Abstract The objective of this study is twofold: firstly, to demonstrate the consistency between the anomalous transport results produced by updated Multi-Mode Model (MMM) version 9.0.4 and those obtained through gyrokinetic simulations; and secondly, to showcase MMM’s ability to predict electron and ion temperature profiles in low aspect ratio, high beta NSTX discharges. MMM encompasses a range of transport mechanisms driven by electron and ion temperature gradients, trapped electrons, kinetic ballooning, peeling, microtearing, and drift resistive inertial ballooning modes. These modes within MMM are being verified through corresponding gyrokinetic results. The modes that potentially contribute to ion thermal transport are stable in MMM, aligning with both experimental data and findings from linear CGYRO simulations. The isotope effects on these modes are also studied and higher mass is found to be stabilizing, consistent with the experimental trend. The electron thermal power across the flux surface is computed within MMM and compared to experimental measurements and nonlinear CGYRO simulation results. Specifically, the electron temperature gradient modes (ETGM) within MMM account for 2.0 MW of thermal power, consistent with experimental findings. It is noteworthy that the ETGM model requires approximately 5.0 ms of computation time on a standard desktop, while nonlinear CGYRO simulations necessitate 8.0 h on 8 K cores. MMM proves to be highly computationally efficient, a crucial attribute for various applications, including real-time control, tokamak scenario optimization, and uncertainty quantification of experimental data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Imaging of the electronic bonding of diamond at pressures up to 2 million atmospheres

Diamond shows unprecedented hardness. Because hardness is a measure of resistance of chemical bonds in a material to external indentation, the electronic bonding nature of diamond beyond several million atmospheres is key to understanding the origin of hardness. However, probing the electronic structures of diamond at such extreme pressure has not been experimentally possible. The measurements on the inelastic x-ray scattering spectra for diamond up to 2 million atmospheres provide data on the evolution of its electronic structures under compression. The mapping of the observed electronic density of states allows us to obtain a two-dimensional image of the bonding transitions of diamond undergoing deformation. The spectral change near edge onset is minor beyond a million atmospheres, while its electronic structure displays marked pressure-induced electron delocalization. Such electronic responses indicate that diamond’s external rigidity is supported by its ability to reconcile internal stress, providing insights into the origins of hardness in materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Weighted Mobility

Engineering semiconductor devices requires an understanding of charge carrier mobility. Typically, mobilities are estimated using Hall effect and electrical resistivity meausrements, which are are routinely performed at room temperature and below, in materials with mobilities greater than 1 cm 2 V -1 s -1 . With the availability of combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measure the weighted mobility (electron mobility weighted by the density of electronic states). A simple method to calculate the weighted mobility from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good results at room temperature and above, and for mobilities as low as 10 -3 cm 2 V -1 s -1 , <!--FIGURE--> μ w = 331 c m 2 V s ( m Ω c m ρ ) ( T 300 K ) - 3 / 2 [ e x p [ | S | k B / e - 2 ] 1 + exp [ - 5 ( | S | k B / e - 1 ) ] + 3 π 2 | S | k B / e 1 + exp [ 5 ( | S | k B / e - 1 ) ] ] In this paper, μ w is the weighted mobility, ρ is the electrical resistivity measured in mΩ cm, T is the absolute temperature in K, S is the Seebeck coefficient, and k B /e = 86.3 µV K -1 . Weighted mobility analysis can elucidate the electronic structure and scattering mechanisms in materials and is particularly helpful in understanding and optimizing thermoelectric systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Interdigitated power connector

An electrical connector carries large amounts of electrical current between two circuit boards with low resistance and low self-inductance by means of an interdigitated anode and cathode, thereby providing low dynamic voltage loss. The connector also may include, near where power will be consumed, an interposer board with on-board capacitance to provide even lower dynamic voltage loss. The connector has application to delivering low-voltage, high-current power from a power supply on a first board to electronics on a second board: the low resistance provides low voltage drop for a load current that is constant, while the low inductance and the capacitors provide low voltage fluctuation for a load current that changes. These issues are of great importance, for example, in designing high-performance computers.

Coteus, Paul W.↗
DOE OSTI2021

Efficacy of the Method of Four Coefficients to Determine Charge-Carrier Scattering

The investigation of the electronic properties of semiconductors from transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements) is challenging due to the averaging of charge-carrier dynamics inherent in such measurements. Here, we investigate the incorporation of a fourth measurement of electronic transport, the Nernst coefficient, into the analysis, termed the method of four coefficients. This approach yields the Fermi level, effective mass, scattering exponent, and relaxation time prefactor. We begin with a review of the underlying mathematics and investigate the mapping between the four-dimensional material property and transport coefficient spaces. We then investigate how the traditional single-parabolic band method yields a single, potentially incorrect point on the solution subspace. This uncertainty can be resolved through Nernst coefficient measurements and we map the span of the ensuing subspace. We conclude with an investigation of how sensitive the analysis of transport coefficients is to experimental error for different sample types.

charge carriers↗
DOE OSTI2024

Multiphysics Co-Optimization Design and Analysis of Double-Side Cooled Silicon Carbide-Based Power Module: Preprint

With the rapid growth of Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs), much more rigorous design targets have been set for automotive power electronics, including high power density, high reliability, and low cost. Novel power module and inverter technologies based on wide bandgap (WEG) semiconductors have been developed to meet these design targets, while providing optimal power semiconductor operating temperature and promising thermomechanical performance. Compared with conventional cooling techniques which are normally applied only on one side of power module, double-side cooling approach is now believed to be the solution to enable high power density and low thermal resistance of WEG semiconductor-based power electronics. In this work, we develop a three-phase power module that is double-sided cooled using dielectric fluid jet impingement. In each phase, four silicon carbide (SiC) power semiconductors are bonded to copper busbars without electrical insulation layers. A finite element analysis (FEA) model is created for thermal and thermomechanical analysis. Based on FEA modeling results, we select particular dimensions for a parametric study to optimize thermal and mechanical performance. Using a multi-objective genetic algorithm (MOGA)-based optimization method, we have minimized the maximum junction temperature and thermal stresses within the power module. The multiphysics co-optimization approach has enabled an efficient design process of power modules with greatly reduced computational cost, as compared to conventional processes that rely on exhaustive numerical simulations and iterations.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Design of passive and structural conductors for tokamaks using thin-wall eddy current modeling

Abstract A new three-dimensional electromagnetic modeling tool ( ThinCurr ) has been developed using the existing PSI-Tet finite-element code in support of conducting structure design work for both the SPARC and DIII-D tokamaks. Within this framework a 3D conducting structure model was created for both the SPARC and DIII-D tokamaks in the thin-wall limit. This model includes accurate details of the vacuum vessel and other conducting structural elements with realistic material resistivities. This model was leveraged to support the design of a passive runaway electron mitigation coil (REMC), studying the effect of various design parameters, including coil resistivity, current quench duration, and plasma vertical position, on the effectiveness of the coil. The REMC is a non-axisymmetric coil designed to passively drive large non-axisymmetric fields during the plasma disruption thereby destroying flux surfaces and deconfining RE seed populations. These studies indicate that current designs should apply substantial 3D fields at the plasma surface during future plasma current disruptions as well as highlight the importance of having the REMC conductors away from the machine midplane in order to ensure they are robust to off-normal disruption scenarios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Carbon nanotube (CNT) metal composites exhibit greatly reduced radiation damage

Radiation damage of structural materials leads to mechanical property degradation, eventually inducing failure. Secondary-phase dispersoids or other radiation defect sinks are often added to materials to boost their radiation resistance. We demonstrate that a metal composite made by adding 1D carbon nanotubes (CNTs) to aluminum (Al) exhibits superior radiation resistance. In situ ion irradiation with transmission electron microscopy (TEM) and atomistic simulations together reveal the mechanisms of rapid defect migration to CNTs, facilitating defect recombination and enhancing radiation tolerance. The origin of this effect is an evolving stress gradient in the Al matrix resulting from CNT transformation under irradiation, and the stability of resulting carbides. Extreme value statistics of large defect behavior in our simulations highlight the role of CNTs in reducing accumulated damage. Furthermore, this approach to controlling defect migration represents a promising opportunity to enhance the radiation resistance of nuclear materials without detrimental effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pressure tuning of structural and magnetic transitions in EuAg 4 As 2

We report temperature-dependent measurements of ambient-pressure specific heat, magnetic susceptibility, anisotropic resistivity, and thermal expansion as well as in-plane resistivity under pressure up to 20.8 kbar on single crystals of EuAg 4 As 2 . Based on thermal expansion and in-plane electrical transport measurements at ambient pressure this compound has two, first-order, structural transitions in the 80–120 K temperature range. Ambient-pressure specific heat, magnetization, and thermal expansion measurements show a cascade of up to seven transitions between 8 and 16 K associated with the ordering of the $Eu^{2+}$ moments. In-plane electrical transport is able to detect the more prominent of these transitions, at 15.5, 9.9, and 8.7 K, as well as a weak feature at 11.8 K at ambient pressure. Pressure-dependent electrical transport data show that the magnetic transitions shift to higher temperatures under pressure, as does the upper structural transition, whereas the lower structural transition is suppressed and ultimately vanishes. A jump in resistivity, associated with the upper structural transition, decreases under pressure with an extrapolated disappearance (or a change of sign) by 30–35 kbar. In the 10–15 kbar range a kink in the pressure dependency of the upper structural transition temperature as well as the high- and low-temperature in-plane resistivities suggests that a change in the electronic structure may occur in this pressure range. The results are compared with the literature data for EuAg 4 As 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Magnetoelectronic phenomena due to quantum magnetization fluctuations

The goal of the project was to identify techniques to study magnetoelectronic phenomena such as spin transfer (ST) that stem from the quantum-mechanical nature of magnetization, and utilize them to characterize these quantum phenomena. The first such technique, electronic measurements based on the dependence of resistance on the population of spin-wave quanta (magnons) in a magnetic nanostructure, was shown by detailed measurements to be significantly influenced by the current-driven generation of a highly nonequilibrium phonon distribution by electrical current. This previously unrecognized phenomenon adds to the understanding of current-induced heating phenomena, qualitatively changes the methodology of analysis of current-induced heating common in scientific studies and engineering of current-carrying nanostructures. It benefits the public by providing a new direction for mitigation of Joule heating effects in electronic devices. The project also included quantum simulations of current-induced effects in magnetic nanostructures, which revealed that linear momentum and energy conservation are important for ST. Only angular momentum conservation was previously believed to be important. This finding is important for the fundamental understanding of ST, and for the design of efficient magnetoelectronic devices taking advantage of these conservation laws. Simulations also showed that non-classical ST is dominant in antiferromagnets, which will transform the understanding of ST in these systems. Finally, experimental studies of spin-transfer in ultrathin transition metal films revealed very large non-classical effects which were traced to the quantum origins of magnetism associated in the studied systems with the formation of an orbital liquid state. These findings i) transform the understanding of "conventional" transition-metal magnetism, ii) open a new field of studies in magnetism and a new method for the electronic control of magnetic properties and magnetism itself, and iii) provide a new approach to the development of efficient magnetoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Mechanical detwinning device for anisotropic resistivity measurements in samples requiring dismounting for particle irradiation

Uniaxial stress is used to detwin samples of orthorhombic iron based superconductors to study their intrinsic electronic anisotropy. Here we describe the development of a new detwinning setup enabling variable-load stress-detwinning with easy sample mounting/dismounting without the need to re-solder the contacts. It enables the systematic study of the anisotropy evolution as a function of an external parameter when the sample is modified between the measurements. In our case, the external parameter is the dose of 2.5 MeV electron irradiation at low temperature. We illustrate the approach by studying resistivity anisotropy in single crystals of Ba 1-x K x Fe 2 As 2 at x =0.25 where the much discussed unusual re-entrance of tetragonal C 4 phase, C 4 → C 2 → C 4 , is observed on cooling. With the described technique we found a significant anisotropy increase in C 2 phase after electron irradiation with dose of 2.35 C/cm 2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Influence of surface adsorption on MoS 2 memtransistor switching kinetics

Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS 2 ) memtransistors exhibit gate-tunable memristive switching to implement emerging memory operations and neuromorphic computing paradigms. Grain boundaries and sulfur vacancies are critical for memristive switching; however, the underlying physical mechanisms are not fully understood. Furthermore, the adsorption of water and gaseous species strongly perturbs electronic transport in monolayer MoS 2 , and little work has been done to explore the influence of surface interactions on defect-related kinetics that produces memristive switching. Here, we study the switching kinetics of back-gated MoS 2 memtransistors using current transient measurements in a controlled atmosphere chamber. Here, we observe that adsorbed water molecules lead to suppression of the electronic trap-filling processes concomitant with the resistive switching process, resulting in altered kinetics of the resistive switching. Additionally, using the transient response from “bunched” drain voltage pulse trains performed as a function of temperature, we extract the energy of the affected trap state and find that it places the trap roughly midgap [E T = E C – 0.7 (±0.4) eV]. Our results highlight the importance of controlling for surface interactions that may affect switching kinetics in 2D memtransistors, synaptic transistors, and related memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrical and structural properties of VO 2 in an electric field

We examined the electrical and local structural properties of a VO 2 film at different electric fields using electrical resistance and x-ray absorption fine structure (XAFS) measurements at the V K edge in the temperature range of 30–100 °C. The T c value of the metal-to-insulator transition (MIT) during both heating and cooling decreases with electric field. When the electric field exceeds a certain value, the MIT becomes sharper due to Joule heating. Furthermore, the MIT, the structural phase transition (SPT), and the pre-edge peak transition of the VO 2 do not congruently occur at a uniform temperature. A metallic VO 2 is observed in only the rutile (or M2) symmetry. An electric field induces a substantial amount of conduction electrons in insulating VO 2 . Simultaneously measured resistance and XAFS reveal that Joule heating caused by an external electric field significantly affects the MIT and SPT of VO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Hidden strange metallic state in underdoped electron-doped cuprates

The low-temperature linear-in-T resistivity of “strange metals,” such as the metallic state of the cuprate high-temperature superconductors, has long been thought to be associated with a quantum critical point. However, recent transport studies of the cuprates have found this behavior persists over a finite range of overdoping. Here, in this work, we report magnetoresistance and Hall effect results for electron-doped films of the cuprate superconductor La 2-x ⁢ Ce x CuO 4 (LCCO) for temperatures from 0.7 to 45 K and magnetic fields up to 65 T. For x = 0.12 and 0.13, just below the Fermi surface reconstruction (FSR) at x = 0.14, the normal state in-plane resistivity exhibits a well-known upturn at low temperature. Our new results show that this resistivity upturn is eliminated at high magnetic field and the resistivity becomes linear-in-temperature from ~40 K down to 0.7 K. The magnitude of the linear coefficient scales with Tc and doping, as found previously for dopings above the FSR. This striking observation suggests that the strange metal is not confined to a single “critical point” in the phase diagram, but rather is a robust universal feature of the metallic ground state of the cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Insight to the Duration of 120 °C Baking on the Performance of SRF Niobium Cavities

Low-temperature baking at 100 °C - 140 °C in ultra-high vacuum for several hours is the final cavity processing technique to achieve the highest accelerating gradient cavity by eliminating the high field Q-slope, typically on cavities made of high purity fine grain niobium and subjected to electropolishing. The temperature and duration of baking control the onset of the high field Q-slope and overall quality factor over the baseline measurements. The increase in quality factor is generally related to the reduction in the temperature-dependent surface resistance, which refers to BCS surface resistance due to the reduction in the electronic mean free path and elimination of high field Q-slope is still being actively investigated. Here, we present the results of a series of measurements on 1.3 GHz TESLA shape single-cell cavities with successive low-temperature baking at 120 °C up to 96 hours. The rf loss related to the trapping of residual magnetic field refer to flux trapping sensitivity was measured with respect to the duration of 120 °C bake.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Electronic coherence evolution at the nearly commensurate-incommensurate CDW boundary of 1⁢T−TaS 2

Transition-metal dichalcogenides host a variety of charge-density-wave phases that couple lattice, charge, and correlation effects. In 1⁢𝑇−TaS 2 , the commensurate and nearly commensurate states are well characterized, yet the transition near 350 K into the incommensurate phase has lacked direct momentum-resolved insight. In this work, we use temperature-dependent angle-resolved photoemission spectroscopy to track the electronic structure across this transition. We observe a suppression of quasiparticle spectral weight at the Brillouin-zone center, coincident with the transport anomaly, but without clear evidence of a full band-gap opening. The transition appears to involve momentum-dependent redistribution of spectral weight, consistent with a loss of coherence that reshapes the Fermi surface while leaving conduction dispersions largely intact. These results suggest that the nearly commensurate–incommensurate transition may not align with a conventional metal-insulator transition picture, but rather as an electronic reconstruction driven by loss of coherence. Our work provides new microscopic insight into the resistivity anomaly near room temperature and may guide design principles for collective electronic switching in transition-metal dichalcogenides.

36 MATERIALS SCIENCE↗