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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

An Improved Design and Versatile New Lamination Fabrication Method for Twin Electrode Thin Layer Cells Utilizing Track‐etch Membranes

Abstract Reported here are laminated membrane electrodes, an improved design and more advantageous method of fabrication for previously reported thin layer cell electrode systems developed on track‐etch membranes. The laminated membrane approach potentially further improves flow resistance by dramatically reducing the surface area to volume ratio, but also produces a cohesive device that can be more readily applied to a broad range of applications. In addition, this new fabrication method was implemented in a scalable, commercial process and resulting product demonstrations indicate that volume manufacturing is feasible. Characterization of laminated membrane electrodes reveal redox cycling amplification factors as high as 30 with linear responses to variable concentrations of redox couple. These performance characteristics are shown to be comparable to similar generator‐collector systems fabricated through much more laborious laboratory methods. This combination of added versatility, cost‐reduced fabrication and exceptional performance clearly reveals unrealized potential of track‐etch membrane approaches and boosts their candidacy as powerful new options for generator‐collector electrode systems.

Hauke, Adam↗
DOE OSTI2022

Atomic Layer Deposition of Ruthenium Films Using Ruthenium Diketonates and O 2 , H 2 , or N 2 O: The Role of Ruthenium Etching

In this work, the evolution of the surface during the steps that comprise the atomic layer deposition (ALD) of ruthenium films on a nickel substrate using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)ruthenium(III) (Ru(tmhd) 3 ) and molecular oxygen was characterized using a combination of X-ray photoelectron (XPS) and reflection–absorption infrared (RAIRS) spectroscopies. The uptake of the Ru metalorganic precursor was determined to be activated, involving the average loss of two out of the three ligands (and the retention of the third, in molecular form, at the surface–vacuum interface), and self-limited, as required in ALD. The reaction of the resulting layer from that first half of the ALD cycle with O 2 proved to be more complex: in addition to the desired removal of the carbon-containing material, the Ni substrate becomes oxidized, and some Ru is etched away in the form of the volatile RuO 4 gas. By testing different combinations of exposures and temperatures it was determined that Ru film growth was possible, but tuning and optimizing the ALD or atomic layer etching (ALE) process conditions for maximum film growth or removal rate per cycle proved difficult. Replacing O 2 with H 2 was shown not to be viable either, as such an agent can reduce the nickel oxide formed after O 2 treatments (in fact, Ru(tmhd) 3 can do this as well) but not remove the carbonaceous material deposited on the surface by the Ru precursor. The use of N 2 O, on the other hand, showed much promise, being capable of removing most of the surface carbon without affecting the Ru film or the Ni substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Depolymerization as a Design Strategy: Depolymerization Etching of Polymerization-Induced Microphase Separations

Thermally triggered depolymerization has traditionally been viewed through the lens of sustainability and recycling, not as a constructive tool for materials design. Herein, we show that selective, thermally triggered depolymerization to gaseous monomer serves as a solvent-free strategy for generating porosity in nanostructured polymer materials, offering a means to bypass the mass transport limitations inherent in conventional solution-based etching. As a demonstration platform, we employed polymerization-induced microphase separation (PIMS) to generate disordered bicontinuous block copolymer structures with embedded depolymerizable domains. By incorporating a methacrylate block susceptible to thermal depolymerization within a cross-linked, depolymerization-resistant styrenic matrix, we developed a process we term depolymerization etching of polymerization-induced microphase separations (DEPIMS). This approach enables highly selective and efficient domain removal via reversion to monomer to produce mesoporous materials with high surface areas (>200 m 2 /g). Subsequent surface functionalization yielded mesoporous adsorbents with tunable uptake kinetics and among the highest dye adsorption capacities reported for PIMS-derived materials, demonstrating the adaptability of the DEPIMS platform for chemical separations. DEPIMS can also be extended to a gram-scale, one-pot approach to yield mesoporous materials with recoverable monomer in under 12 h. These findings reposition thermal depolymerization from a sustainability tool to a broadly enabling strategy for scalable, on-demand fabrication of functional nanostructured materials.

Depolymerization↗
DOE OSTI2021

Investigations of the stability of etched or platinized p-InP(100) photocathodes for solar-driven hydrogen evolution in acidic or alkaline aqueous electrolytes

Here, the stability of p-InP photocathodes performing the hydrogen-evolution reaction (HER) has been evaluated in contact with either 1.0 M H 2 SO 4 (aq) or 1.0 M KOH(aq), with a focus on identifying corrosion mechanisms. Stability for the solar-driven HER was evaluated using p-InP electrodes that were either etched or coated with an electrodeposited Pt catalyst (p-InP/Pt). Variables such as trace O 2 were systematically controlled during the measurements. Changes in surface characteristics after exposure to electrochemical conditions as well as electrode dissolution processes were monitored using X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometry (ICP-MS). In either H 2 SO 4 or KOH, etched p-InP photoelectrodes corroded cathodically under illumination, forming metallic In 0 at the electrode surface. In contrast, electrodeposition of Pt kinetically stabilized illuminated p-InP photocathodes in both H 2 SO 4 and KOH by inhibiting the cathodic corrosion pathway. Notably, when held at 0 V vs. the reversible hydrogen electrode (RHE) in 1.0 M H 2 SO 4 (aq), p-InP/Pt exhibited a stable current density (J) of ~–18 mA cm –2 for >285 h under simulated 1 Sun illumination. The long-term current density vs. potential (J–E) behavior at pH 0 and pH 14 of p-InP/Pt photocathodes correlated with changes in the surface chemistry as well as the dissolution of p-InP. In acidic media, the J–E behavior of p-InP/Pt photocathodes remained nearly constant with time, but the surface of a p-InP/Pt electrodes gradually turned P-rich via a slow and continuous leaching of In ions. In alkaline electrolyte, the surface of p-InP/Pt electrodes was passivated by formation of an InO x layer that exhibited negligible dissolution but led to a substantial degradation in the J–E characteristics. Consequently, changes in the catalytic kinetics and surface stoichiometry are both important considerations for determining the corrosion chemistry and the long-term operational stability of InP photoelectrodes.

14 SOLAR ENERGY↗
DOE OSTI2024

A transient site balance model for atomic layer etching

We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl 2 ) and argon ions (Ar + ). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region ('top layer') and a perfectly mixed subsurface region ('mixed layer'). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl 2 or Ar + fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper, provides further evidence of the accuracy of the model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Etched Silicon Planar CRL Optics for the High-Energy X-ray Diffraction Beamlines 11-ID-B and 11-ID-C at the APS

We report the focusing of high-energy X-rays is most commonly achieved by commercially available compound refractive lenses (CRL), which are added together in larger structures. There is a need for high-energy X-ray beamlines to enable focusing in only one dimension down to a few micrometers to study layered materials and thin films. High-energy X-rays above 50 keV require often 100 lenses or more, therefore it is more efficient to etch the complete arrays of lenses into a monolithic substrate like a silicon wafer. Custom lens arrays were fabricated for the high-energy x-ray beamlines 11-ID-B, and 11-ID-C at the Argonne National Laboratory. The fabrication required tuning parameters of the Bosch process to optimize the etching of deep vertical sidewalls at a reasonable speed without overheating. The beamline 11-ID-B is equipped with lens arrays of 85-110 lenses for 59 keV and 190-250 lenses for 87 keV photon energy, focusing the beam vertically below 5.0 µm at the sample positions between 1600 mm to 2100 mm. 11-ID-C has received arrays of 435 lenses that focus 106 keV X-rays to a vertical height of 2.0 µm at the sample position. In both cases, the flux density gain in the focal spot is larger than a factor of 20, relative to using slits to cut the beam size. The lens setup is permanently installed and can be moved in and out of the beam during the experiment without further alignment. The lenses have enabled operando diffraction studies on interfaces in batteries and the development of pair distribution function (PDF) analysis using grazing incidence geometry.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Erosion of focus rings in capacitively coupled plasma etching reactors

In plasma etching reactors, the structure surrounding the wafer, often called a focus ring (FR), plays an important role in maintaining uniform fluxes of reactants across the wafer. The FR is typically made of dielectric materials. During the plasma etching process, the sheath that forms over the wafer to accelerate ions anisotropically into the surface extends over the FR. Electrical charging of the FR modifies the sheath relative to that over the wafer. On the one hand, one wants the sheath to be uniform across the wafer-FR boundary to enable uniform fluxes to the edge of the wafer. On the other hand, maintaining a high voltage sheath over the FR will erode the FR, which is undesirable as the FR is a consumable component that must be periodically replaced in high volume manufacturing. In this work, we computationally investigated the consequences of dielectric constant ε of the FR materials on erosion of the FR. The series capacitance of the FR and its underlying structure is typically smaller than that of the wafer and its underlying structure. As a result, the FR charges quickly relative to the wafer, which then reduces the voltage across the sheath on top of the FR. The ion energy and angular distributions (IEADs) striking the FR are, therefore, generally lower in energy with a broader angular distribution. With ε = 2, the ion energies striking the middle to the outer edge of the FR are 30–180 eV, whereas for ε = 100, the ion energies are 120–380 eV. At the transition between the wafer and the FR, there is a skew in the IEAD as large as 15° that results from the difference in sheath thickness above the wafer and the FR. This skew and the erosion rate across the FR are functions of the dielectric constant of the FR material. With low ε, the FR charges quickly, less plasma is produced above the FR, and there is less voltage across the sheath that results in less FR erosion. Increasing ε of the FR produces a higher sheath voltage as well as higher ion fluxes over the FR, which increases erosion, while the skew at the edge of the wafer is less severe. Further, the material of the subsurface portion of the FR, which dominates its capacitance, is an important consideration in the design of the substrate assembly.

36 MATERIALS SCIENCE↗
DOE OSTI2018

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Integrated Electrochemical Decontamination and Etching System

Researchers at Los Alamos have developed a novel electrochemical technology consisting of several components in a system that provides a self-contained, efficient, semi- or fully automated, and flexible decontamination system for metals and metal alloys. Any number of novel system configurations are possible such as: 1) a recirculating bath to clean contaminated parts, 2) a recirculating solution through a suction head for larger parts or surfaces, and 3)injecting and removing the solution in/out of large containment tanks. The System is integrated with a proprietary contactor for separation of radioactive components. The decontamination system can also be used to etch steel alloys for increased adhesion of coatings. Coatings embedded with nanoparticles have also been developed and tested on these etched surfaces. We are seeking input from potential users or interested parties regarding the development of the technology.

42 ENGINEERING↗
DOE OSTI2020

Metal-Assisted Chemical Etching and Electroless Deposition for Fabrication of Hard X-ray Pd/Si Zone Plates

Zone plates are diffractive optics commonly used in X-ray microscopes. Here, we present a wet-chemical approach for fabricating high aspect ratio Pd/Si zone plate optics aimed at the hard X-ray regime. A Si zone plate mold is fabricated via metal-assisted chemical etching (MACE) and further metalized with Pd via electroless deposition (ELD). MACE results in vertical Si zones with high aspect ratios. The observed MACE rate with our zone plate design is 700 nm/min. The ELD metallization yields a Pd density of 10.7 g/cm 3 , a value slightly lower than the theoretical density of 12 g/cm 3 . Fabricated zone plates have a grid design, 1:1 line-to-space-ratio, 30 nm outermost zone width, and an aspect ratio of 30:1. At 9 keV X-ray energy, the zone plate device shows a first order diffraction efficiency of 1.9%, measured at the MAX IV NanoMAX beamline. With this work, the possibility is opened to fabricate X-ray zone plates with low-cost etching and metallization methods.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effects of Plasma Etching on Dopant Compensation between p- and n-Type Poly-Si Fingers in Passivated Interdigitated Back Contact Solar Cells

Efficiencies surpassing 26% have been achieved for single-junction Si solar cells based on the interdigitated back contact (IBC) architecture. However, the possibility of lateral shunting between the doped fingers has limited industrial adoption thus far. To avoid this possibility of shunt, complicated patterning techniques of the doped rear fingers have been developed, but spreading can still occur through multiple pathways during cell processing. Patterning can be simplified by using masked plasma-enhanced chemical vapor deposition (PECVD), but spreading during deposition will also lead to contamination of the isolation region between doped fingers. We significantly reduce the effect of this spreading through a short, gentle plasma etching step, which enables a trap-assisted compensation mechanism to take effect more easily than without the plasma etch. These two effects combined allow for the use of a simple patterning technique while still maintaining a highly resistive region between the doped fingers, and will reduce the complexity of IBC cell fabrication overall.

atom probe↗
NASA NTRS1966

Nonhazardous acid etches weld samples

Nonhazardous citric acid solution used with 24 volt dc power supply etches weld samples. This etching method is limited to 300 stainless steel and a small range of other high temperature alloys.

Allen, B. C↗
NASA NTRS1968

Hydrogen peroxide etching proves useful for germanium

Influence of process variations in the etching of germanium with hydrogen peroxide has been studied, along with damage effects due to radiation. The work advances the knowledge of the etching process for germanium.

Dayal, Y.↗
NASA NTRS1970

Controlled etching of printed-circuit boards

Ferric chloride in an aqueous medium etches copper from the surface of printed-circuit boards. Ferric ions are reduced to ferrous ions resulting in a reduced etching rate.

Kovell, S. P.↗
NASA NTRS1971

Ultrasonic metal etching for metallographic analysis

Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.

Young, S. G.↗
NASA NTRS1973

The nature of dark-etching rims in meteoritic taenite.

Taenite fields when etched develop a cloudy brown rim with approximate compositional limits of 25 and 40% Ni. In iron meteorites this cloudy zone is only a few microns wide, with a sharp, high-Ni edge about 1 micron from the kamacite interface and a diffuse edge several microns from the central plessite. It is always present in irons unless the meteorite has been cosmically or terrestrially reheated. X-ray and electron diffraction of grains scratched from exceptionally larger areas of cloudy taenite in the mesosiderite Estherville show that this etching zone contains a fine exsolution of kamacite. Detailed electron-probe investigations of taenite in Estherville show that there is a step in the M-shaped Ni profile at the sharp, high-Ni edge of the cloudy region, the Ni dropping suddenly from approximately 45 to 42%. It is proposed that exsolution in the cloudy region effectively froze in the Ni profile at that temperature. On subsequent cooling only the clear outer taenite continued to equilibrate with the kamacite matrix, producing the kink in the M profile. Cloudy taenite is therefore a variety of plessite differing from the usual varieties in that it forms at lower temperatures in areas much richer in Ni, and the morphology is not crystallographically oriented. Its absence can provide a sensitive indication of reheating.

Scott, E. R. D.↗