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Instrument employs light reflecting surface (evaporated aluminum coating or minor substrate) behind phosphor screen to improve effective quantum efficiency in dual process: fraction of incoming X-rays are converted to photoelectrons at photocathode; and X-rays that pass through photocathode and thin X-ray transparent membrane enter phosphor screen.
Several II-VI heterojunctions show promise for photovoltaic conversion of solar energy. The three of greatest interest are p-CdTe/n-CdS, p-CdTe/n-ZnSe, and p-ZnTe/n-CdSe. Several p-CdTe/n-CdS heterojunction cells have been prepared by close spaced transport deposition of p-CdTe on single crystal n-CdS, and by two source vacuum evaporation of n-CdS on single crystal p-CdTe. Both types of cells, in an experimental stage, are quite comparable, exhibiting values of quantum efficiency between 0.5 and 0.9, open circuit voltages between 0.50 and 0.66 V, fill factors between 0.4 and 0.6, and solar efficiencies up to 4 percent. Cells of p-ZnTe/n-CdSe have also been made by close spaced vapor transport deposition of n-CdSe on single crystal p-ZnTe.
Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.
Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.
The paper describes an X-ray detector using microchannel plates as a photocathode surface and imaging photoelectron multiplier, and a crossed wire grid as a two-dimensional position-sensitive detector. The position resolution is 10 microns. The crossed wire grid consists of 100-micron-diam wires on 200-micron centers. Position sensing is accomplished by electronic interpolation to 1/20 of the wire spacing. The quantum efficiency of the microchannel plates varies from 29% at 0.28 keV to 5% at 3 keV. This detector will provide second-of-arc X-ray imaging in the focal plane of the 342.9-cm focal length grazing-incidence telescope being prepared for the HEAO-B observatory. By addition of suitable photocathodes, it can be used for single-photon imaging light detection in the UV, visible, and near-IR-ranges. In all cases, it gives a very low dark counting rate, allows timing of individual events to 1 microsec or less, and can handle counting rates up to 10,000 per sec.
A large format image tube camera of a type under consideration for use on the Space Shuttle Sortie Missions is evaluated. The evaluation covers the following subjects: (1) resolving power of the system (2) geometrical characteristics of the system (distortion etc.) (3) shear characteristics of the fiber optic coupling (4) background effects in the tube (5) uniformity of response of the tube (as a function of wavelength) (6) detective quantum efficiency of the system (7) astronomical applications of the system. It must be noted that many of these characteristics are quantitatively unique to the particular tube under discussion and serve primarily to suggest what is possible with this type of tube.
Preliminary testing of a back illuminated, buried channel CCD camera for astronomical telescopic imaging applications was demonstrated. Images of several planets and both galactic and extragalactic ojects were obtained using a 400 x 400 element TI CCD in a JPL developed camera on a 154 cm telescope on Mt. Lemmon. The high quantum efficiency and relatively low noise of this CCD, along with the inherently high photometric and geometric stability, opens up new opportunities for astronomical research, especially in the spectral range from 0.8 to 1.0 micrometers. For example, images of Uranus obtained in the 0.89 micrometers absorption band of methane clearly reveal for the first time markings on the disk of this remote planet. Applications for both ground based and near earth orbiting telescopes are discussed.
High speed, electrostatic photomultipliers were developed for use in 400 megabit laser communication systems operating at the 1.06 micron wavelength. A high performance, electrostatic III-V photocathode PMT was shown in communication system tests to perform competitively with solid state and avalanche photodiodes. Signal-induced noise and III-V cathode stability were identified as remaining technical problems while cathode quantum efficiencies of or = 5% at 1.06 micron and 320 picosecond rise and fall time pulse performance were achieved.
An infrared imaging technique based on the nonlinear interaction known as upconversion was used to obtain images of several astronomical objects in the 10 micrometer spectral region, and to demonstrate quantitatively the sharper images allowed for wavelengths beyond the visible region. The deleterious effects of atmospheric inhomogeneities on telescope resolution were studied in the infrared region using the technique developed. The low quantum efficiency of the device employed severely limited its usefulness as an astronomical detector.
Single-heterostructure diode lasers formed by compositional interdiffusion (CID) and liquid-phase epitaxy (LPE) of lead salts are discussed. The CID technique, which involves creation of a single heterostructure in a pseudobinary compound having binary constituents with different vapor pressures, is reviewed; growth of lead-salt crystals of various compositions is described. Some electrical and optical characteristics, including properties indicative of high internal quantum efficiencies, are given for lasers which employ the CID and LPE diodes. High operating temperatures (i.e., liquid nitrogen levels and above), together with wide tuning ranges (a diode wavelength of 12.7 microns is reported), make the lasers useful in high-resolution spectrometry and advanced trace-gas monitoring systems.
Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.
A high performance near infrared sensitive photomultiplier tube was procured and evaluated with emphasis on those characteristics affecting its use over the very large amplitude range of signals encountered by an airborne lidar intended for mapping the distribution of stratospheric aerosols. A cathode quantum efficiency of 4.3 percent at 1.06 micrometer wavelength and a background count of less than 10,000 per second were realized. It is recommended that the tube be stored and operated at a temperature near -20 C, or cooler. Performance was found acceptable for the application in both pulse counting and analog modes, but careful design, probably including dynamic gain control, will be required to effectively utilize both modes on the same lidar shot.
High performance 1.06 micron m avalanche photodetectors (APDs), fabricated in the GaAlSb system, have high quantum efficiency (90 percent), high speed (risetime less than 60 ps) and low leakage currents (less than 50 na). The dark current represents more than an order of magnitude reduction compared to previously reported results. The high speed avalanche gain of these devices is between 20 and 50. The area uniformity is better than + or - 10 percent. GaAlAs APDs at 0.53 micron m have even faster speed, lower dark currents, and high speed gains of 100 to 200. Optical rangefinders based on measured APD performance parameters have far superior performance when compared to even ideal photomultiplier tubes in either a one color or two color rangefinder system. For a one color system, f factor of two lower time jitter can be achieved with identical transmitted power. The superiority of the APD based two color receiver is significant and exists in the entire range of desired time jitters (less than 100 ps) and received power levels.
The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.
The behavior of TiO2 and SrTiO3 photoanodes in cells for the photoelectrolysis of H2O has been investigated for high-intensity 351-,364-nm excitation from an Ar ion laser. Intensities up to 380 W/sq cm have been used. For TiO2 a small amount of surface decomposition is found after irradiation at high intensity, whereas SrTiO3 undergoes no detectable changes. Current-voltage properties for both electrodes are essentially independent of light intensity up to the level of 380 W/sq cm, and there is little if any change in quantum efficiency for electron flow. Photocurrent densities have been shown to exceed 5 A/sq cm for O2 evolution. Data show that the energy storage rate associated with the SrTiO3 photoelectrolysis can exceed 30 W/sq cm; this represents the highest demonstrated rate of sustained optical-to-chemical energy conversion.
The stimulated-emission cross sections at 1064 and 1342 nm in Nd:YVO4 were determined by measurement of laser thresholds as a function of output mirror reflectivity. Small samples of Nd:YVO4 and Nd:YAG were end pumped at room temperature with a CW 514.5-nm argon ion laser in an almost identical geometrical arrangement which permitted comparative values to be obtained. Assuming that the pumping quantum efficiency of Nd:YVO is similar to that of Nd:YAG, the stimulated-emission cross sections obtained for the 1064- and 1342-nm transitions were respectively 12 x 10 to the -19th and 6.0 x 10 to the -19th/sq cm.
Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.
The signal-to-noise (S/N) ratio to be expected when a 180 deg rotationally shearing interferometer is used for image recovery at the diffraction limit of a large telescope is computed. The variance and covariance of the irradiance fluctuations at the detector array are shown to yield measures of the high-frequency spatial spectrum of the source. Four fundamental sources of noise are considered: temporal fluctuations of the source, space-time fluctuations of the atmosphere, shot noise in the detected photocurrents, and the effects of finite sampling. S/N is found to be directly proportional to the angular resolution of the telescope, the single-frame integration time, the square root of the number of frames, the cube of the operating wavelength, the quantum efficiency of the detector, and the average spectral irradiance from the source on the pupil. It is inversely proportional to the cube of the field angle subtended by the source (or part thereof) under study.