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Results for “silicon solar cell”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

Lindholm, F. A.↗
NASA NTRS1980

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

Sah, C. T.↗
DOE OSTI2020

Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures

In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-V OC , photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.

14 SOLAR ENERGY↗
NASA NTRS1976

Silicon solar cell testing in concentrated sunlight and simulated sunlight

A method is described for testing silicon solar cells in concentrated sunlight and simulated sunlight. Concentrated sunlight is obtained by using an acrylic Fresnel lens; the simulated sunlight source is a short arc Xenon lamp. Average illumination levels during the tests are inferred from an assumed linear relationship between short circuit current and illumination. The linearity assumption is investigated for 0.3 alpha cm base resistivity silicon cells and found to be valid. Some typical results are presented to illustrate the type of information obtained during the testing.

Burgess, E. L.↗
NASA NTRS1987

Resistivity and thickness effects in dendritic web silicon solar cells

The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

Meier, D. L.↗
DOE OSTI2023

Radiation Effects Model for Ultra-Thin Silicon Solar Cells

This work is focused on investigation of radiation effects in Ultra-Thin Silicon solar cells with a particular emphasis on electron irradiation. The study is motivated by the application of these solar cells, developed by Solestial, Inc., for powering space missions, including those led by NASA, the Department Of Defence (DOD), and commercial satellite missions. Our research encompasses both experimental and theoretical approaches, addressing unique challenges posed by ultra-thin solar cell technology that deviates from the traditional models. From the experimental point of view, the test structures were irradiated with 1 MeV electrons up to the fluence of 1E+15 e/cm$^{2}$. Radiation effects due to accumulated electron dose were noticed as a drop in open-circuit voltage (Voc). An analytical expression for modeling the Voc characteristic of the UT-Si cell after exposure to electron irradiation was formulated and subsequently compared with experimental data. The theoretical foundation of the proposed approach builds upon the Non-Ionising Energy Loss (NIEL) concept, a fundamental parameter in addressing radiation damage modelling and survivability predictions.

Fedoseyev, Alex↗
NASA NTRS1970

Silicon solar cells improved by lithium doping

Results of conference on characteristics of lithium-doped silicon solar cells and techniques required for fabrication indicate that output of cells has been improved to point where cells exhibit radiation resistance superior to those currently in use, and greater control and reproducibility of cell processing have been achieved.

Berman, P. A.↗
NASA NTRS1977

Applications of ion implantation for high efficiency silicon solar cells

Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

Minnucci, J. A.↗
NASA NTRS1976

Silicon solar cells by ion implantation and pulsed energy processing

A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

Kirkpatrick, A. R.↗
NASA NTRS1980

Recent progress in high-output-voltage silicon solar cells

The status of the technology associated with the development of high output voltage silicon solar cells is reported. The energy conversion efficiency of a double diffusion process is compared to that of a single diffusion process. The efficiency of a 0.1 ohm/cm solar cell is characterized both before and after covering.

Muelenberg, A.↗
NASA NTRS1981

Thin foil silicon solar cells with coplanar back contacts

To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

Ho, F.↗
NASA NTRS1986

Theoretical and experimental considerations for high silicon solar cell performance

This paper reviews ongoing research aimed at the attainment of highly efficient silicon solar cells. The importance of low-recombination highly-doped n(+) and p(+) regions and the manner in which such regions are fabricated are discussed. Theoretical light-trapping considerations are combined with experimental reflectance data to show that high quantum efficiency may be obtained from thin (100-micron) cells. The principal finding of this work is that thin solar cells with conversion efficiencies of over 20 percent may be fabricated if recombination at the front and back metal/silicon interfaces is reduced. Large-area cells (53 sq cm) with an efficiency of 18 percent are reported.

Spitzer, M. B.↗
NASA NTRS1976

Development of a high efficiency thin silicon solar cell

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Lindmayer, J.↗