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At least 271 records · Page 15

Evaluation of Low-Energy Hydrogen Separation Method Using Metal-Organic Frameworks (MOFs) for Closed-Loop ECLSS Air Revitalization (CLEAR)

The State-of-the-Art (SOA) air revitalization architecture onboard the International Space Station (ISS) recovered approximately 50% of the oxygen (O 2 ) from metabolic carbon dioxide (CO 2 ) via the Sabatier process from 2011 to 2017. O 2 recovery is currently constrained by the limited availability of reactant hydrogen (H 2 ) preventing complete conversion of CO 2 to H 2 O. Increasing O 2 recovery within Closed-Loop ECLSS is essential to reducing resupply mass for long-duration manned missions; specifically focusing on water (H 2 O) which supplies H 2 for Sabatier via water electrolysis. Past ground test endeavors at Marshall Space Flight Center (MSFC) have attempted to recover H 2 from Sabatier-produced CH 4 using technologies such as carbon vapor deposition (CVD) and plasma pyrolysis. The byproducts of these technologies can act as a catalyst poison or reactor deadload to the Sabatier reactor. Hydrogen separation techniques must be utilized to maintain the Sabatier catalyst during gas recycling and must be scalable, non-energy intensive, and safe to operate in a habitation setting. Research indicated that metal-organic frameworks (MOFs) could meet these criteria and were tested for their capability to capture the various carbon-based gaseous products of CVD and plasma pyrolysis such as acetylene (C 2 H 2 ), ethylene (C 2 H 4 ), ethane (C 2 H 6 ), and carbon monoxide (CO) which would purify the hydrogen gas stream passing through the MOF. A sub-scale adsorption column was developed by Marshall Space Flight Center to test three MOF candidates against a synthetic gas mixture comprised of process-relevant carbonous gases and hydrogen to evaluate the separation capability of the MOFs. The results of the hydrogen separation capability, isothermal desorption capability, and demonstrated cyclic reuse of the MOF are presented in this paper.

Kagen Crawford↗

Generation of long time creep data on refractory alloys at elevated temperatures

Creep tests were conducted on two tantalum alloys (ASTAR 811C and T-111 alloy), on a molybdenum alloy (TZM), and on CVD tungsten. The T-111 alloy 1% creep life data have been subjected to Manson's station function analysis, and the progress on this analysis is described. In another test program, the behavior of T-111 alloy with continuously varying temperatures and stresses has been studied. The results indicated that the previously described analysis predicts the observed creep behavior with reasonable accuracy. In addition to the T-111 test program, conventional 1% creep life data have been obtained for ASTAR 811C alloy. Previously observed effects of heat treatment on the creep strength of this material have been discussed and a model involving carbide strengthening primarily at the grain boundaries, rather than in a classical dispersion hardening mechanism, has been proposed to explain the observed results.

Sheffler, K. D.↗

Fabrication and testing of tungsten heat pipes for heat pipe cooled reactors.

The choice of chemically vapor deposited (CVD) tungsten as material for the heat pipes is based on studies reported by Busse et al. (1970). Aspects of pipe construction are discussed together with wick construction, and heat pipe operation. An auxiliary heater was used to overcome problems during the start of operation in the case of a thermally loaded pipe. Two heat pipes were operated at temperatures up to 1850 K. Annular and channeled wicks were investigated. The design of a cross flow heat exchanger is presented together with the design of a reactor heat pipe life test station.

Bacigalupi, R. J.↗

High temperature thermocouple development program, part A and part B

The problem of extending the useful life of thermocouples intended for in-core and out-of-core thermionic applications in a vacuum environment at temperatures up to 2273 K for periods of time up to 10,000 hours was investigated. Many factors that may influence this useful life were examined, and a basic probe design was developed. With a few modifications, twenty-three thermocouple assemblies were fabricated. Generally the finished thermocouple consisted of solid doped W-3% Re and W-25% Re wires and high purity and high density BeO insulators, and was sheathed in a high purity tantalum tube. In a few probes, stranded thermocouple wires were substituted; commercial grade BeO was used; and in two cases, CVD W-22% Re tubing was used. Each of the components was made of the highest purity materials available; was subjected to special cleaning steps, and was assembled in a class 10,000 clean room. Pertinent physical and chemical properties were determined on each of the components. Special processing techniques were used in the fabrication of the high purity (99.95%), high density (over 95% of theoretical) BeO.

Toenshoff, D. A.↗

High temperature superconductor NB3Ga

The discovery of superconductivity at 20.3 K in the Nb-Ga system by applying chemical vapor deposition (CVD) techniques to the materials preparation problem is reported. Films on ceramic substrates have been grown with superconducting onsets of up to 20.3 K. Critical fields at 4.2 K in excess of 300 kG and alpha's of 1100,000 T-A/sq cm have been obtained. The results confirm that the outstanding properties of Nb-Ga are due to an equilibrium configuration of the system, namely, the stoichiometric A-15 compound Nb3Ga, which is stable at relatively low temperatures. Practical materials preparation problems center on the codeposition of an adjacent Nb5Ga3 phase and the requirement that the deposition temperature be low. Some ternary alloys were also prepared, with part of the Ga replaced by Sn, Sb, Al, or Ge.

Vieland, L. J.↗

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage, V sub oc in BSF cells. Results indicate that the V sub oc effect is not caused simply by the mechanism of blocking of minority carriers.

Mandelkorn, J.↗

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage in BSF cells.

Mandelkorn, J.↗

High-temperature strength stability of three forms of chemically vapor deposited tungsten

Three types of CVD tungsten (fluoride-produced, chloride-produced, and a layered composite of the two-termed duplex) were evaluated to determine their high-temperature strength and microstructural stability following 5000-hr exposure to temperatures of 1540 and 1700 C. At the highest temperatures investigated (1540 and 1700 C), the tensile strengths of the two basic materials were essentially equal. At lower temperatures, chloride tungsten possessed lower yield strength but higher ultimate strength than fluoride tungsten while the behavior of the duplex material was generally intermediate. Apparent anomalies in high-temperature elongation behavior are explained on the basis of grain boundary cavity formation and recrystallization. The grain size of fluoride tungsten changed only slightly following 5000-h treatment at 1700 C. In contrast, chloride tungsten possessed both poor resistance to grain growth and an accompanying relatively high ductile-brittle transition temperature.

Bryant, W. A.↗

Development of an economical silicon solar cell

The growth of electronically viable silicon films on inexpensive foreign substrates is studied, with the objective of creating a technology to radically reduce the overall cost of the silicon employed in photovoltaic solar energy conversion. The approach employed is to enhance crystalline ordering during film nucleation by confining arriving silicon atoms to a narrow band traveling across a substrate, i.e., the Lateral Growth Technique (LGT). The efforts have employed physical vapor deposition of silicon in a vacuum evaporator on glass and metal substrates with both slit masks and single defining edges, and subsequent chemical vapor deposition (CVD) of thicker films on these thin film structures by pyrolysis of silane at higher temperatures.

Lindmayer, J.↗

Longitudinal residual stresses in boron fibers

A method of measuring the longitudinal residual stress distribution in boron fibers is presented. The residual stresses in commercial CVD boron on tungsten fibers of 102, 142, and 203 microns (4, 5.6, and 8 mil) diameters were determined. Results for the three sizes show a compressive stress at the surface 800 to -1400 MN/sq m 120 to -200 ksi), changing monotonically to a region of tensile stress within the boron. At approximately 25 percent of the original radius, the stress reaches a maximum tensile 600 to 1000 MN/sq m(90 to 150 ksi) and then decreases to compressive near the tungsten boride core. The core itself is under a compressive stress of approximately -1300 MN/sq m (-190 ksi). The effects of surface removal on core residual stress and core-initiated fracture are discussed.

Behrendt, D. R.↗

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗

Longitudinal residual stresses in boron fibers

A technique is proposed for measuring the longitudinal residual stress distribution in commercial CVD (Chemical Vapor Deposition) boron on tungsten fibers of 102, 142, and 203 microns in diameter. The experimental apparatus is so designed that continuous measurements are made of the length changes of a boron fiber specimen as the surface of the fiber is removed by electropolishing. The effects of surface removal on core residual stress and core-initiated fracture are discussed. The three sizes of boron fibers investigated show similar residual stress distributions, i.e., compressive at the surface, tensile near the core, and for the 102-micron fiber compressive again in the core. It is shown that an increase in UTS is due to the increase in the compressive stress at the core produced by fiber contraction during surface removal. An expression is derived for calculating the longitudinal residual stress at a given radius for an as-received fiber of a certain radius from measurements of the axial strain produced by removal of the surface by electropolishing.

Behrendt, D. R.↗

Techniques for increasing boron fiber fracture strain

Improvement in the strain-to-failure of CVD boron fibers is shown possible by contracting the tungsten boride core region and its inherent flaws. The results of three methods are presented in which etching and thermal processing techniques were employed to achieve core flaw contraction by internal stresses available in the boron sheath. After commercially and treatment induced surface flaws were removed from 203 micrometers (8 mil) fibers, the core flaw was observed to be essentially the only source of fiber fracture. Thus, fiber strain-to-failure was found to improve by an amount equal to the treatment induced contraction on the core flaw. Commercial feasibility considerations suggest as the most cost effective technique that method in which as-produced fibers are given a rapid heat treatment above 700 C. Preliminary results concerning the contraction kinetics and fracture behavior observed are presented and discussed both for high vacuum and argon gas heat treatment environments.

Dicarlo, J. A.↗

Characterization, shaping, and joining of SiC/superalloy sheet for exhaust system components

Hafnium carbide was shown to be virtually inert when in contact with silicon carbide and Waspaloy for at least 200 hr at 1093 C (2000 F). Extensive interaction was noted with other superalloys such as HA-188. A continuous CVD HfC deposition process was developed for deposition of up to 8 microns on .14 mm (.0056 in.) SiC tungsten core filament at rates as high as .6 m/min. The rate can be increased by increasing the length of the reactor and the output of the power supply used in resistive heating of the filament substrate. The strength of HfC coated filament varies with thickness in a Griffith-like manner. This strength reduction was greater for HfC coatings than for tungsten coatings, presumably because of the greater ductility of tungsten.

Cornie, J. A.↗

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.

Gurtler, R. W.↗