Search NASA⌕ Search

SEARCH · Search NASA

Results for “Memory effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Quantum Tensor-Product Decomposition from Choi-State Tomography

The Schmidt decomposition is the go-to tool for measuring bipartite entanglement of pure quantum states. Similarly, it is possible to study the entangling features of a quantum operation using its operator-Schmidt or tensor-product decomposition. While quantum technological implementations of the former are thoroughly studied, entangling properties on the operator level are harder to extract in the quantum computational framework because of the exponential nature of sample complexity. Here, we present an algorithm for unbalanced partitions into a small subsystem and a large one (the environment) to compute the tensor-product decomposition of a unitary the effect of which on the small subsystem is captured in classical memory, while the effect on the environment is accessible as a quantum resource. This quantum algorithm may be used to make predictions about operator nonlocality and effective open quantum dynamics on a subsystem, as well as for finding low-rank approximations and low-depth compilations of quantum circuit unitaries. We demonstrate the method and its applications on a time-evolution unitary of an isotropic Heisenberg model in two dimensions. Published by the American Physical Society 2024

Mansuroglu, Refik (ORCID:000000017352513X)↗
DOE OSTI2022

Register-Like Storage Block Used as Histograms, Cluster Buffers, and Hough Transform Accumulators for HEP Trigger Systems

In high energy physics experiment trigger systems, block memories are utilized for various purposes, especially in binned searching algorithms. In these algorithms, the storages are demanded to perform like a large set of registers. The writing and reading operation must be performed in single clock cycle and once an event is processed, the memory must be globally reset. These demands can be fulfilled with registers but the cost of using registers for large memory is unaffordable. Another common requirement is the boundary coverage feature during reading process. Additionally, when a memory bin is addressed, the stored contents in the addressed bin and its neighboring bin must be output simultaneously. In this paper, a register-like block storage design scheme is described, which allows updating memory locations in single clock cycle, reading two adjacent bins, and effectively refreshing entire memory within a single clock. The implementation and test results are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2014

Assessment of Shape Memory Alloys - From Atoms To Actuators - Via In Situ Neutron Diffraction

As shape memory alloys (SMAs) become an established actuator technology, it is important to identify the fundamental mechanisms responsible for their performance by understanding microstructure performance relationships from processing to final form. Yet, microstructural examination of SMAs at stress and temperature is often a challenge since structural changes occur with stress and temperature and microstructures cannot be preserved through quenching or after stress removal, as would be the case for conventional materials. One solution to this dilemma is in situ neutron diffraction, which has been applied to the investigation of SMAs and has offered a unique approach to reveal the fundamental micromechanics and microstructural aspects of bulk SMAs in a non-destructive setting. Through this technique, it is possible to directly correlate the micromechanical responses (e.g., internal residual stresses, lattice strains), microstructural evolutions (e.g., texture, defects) and phase transformation properties (e.g., phase fractions, kinetics) to the macroscopic actuator behavior. In this work, in situ neutron diffraction was systematically employed to evaluate the deformation and transformation behavior of SMAs under typical actuator conditions. Austenite and martensite phases, yield behavior, variant selection and transformation temperatures were characterized for a polycrystalline NiTi (49.9 at. Ni). As the alloy transforms under thermomechanical loading, the measured textures and lattice plane-level variations were directly related to the cyclic actuation-strain characteristics and the dimensional instability (strain ratcheting) commonly observed in this alloy. The effect of training on the shape memory characteristics of the alloy and the development of two-way shape memory effect (TWSME) were also assessed. The final conversion from a material to a useful actuator, typically termed shape setting, was also investigated in situ during constrained heatingcooling and subsequent shape recovery experiments. Neutron diffraction techniques are also being applied to the investigation of novel high temperature SMAs with the objective of designing alloys with better stability, higher transition temperatures and ultimately superior durability.

Shape Memory Alloys↗
DOE OSTI2021

Genetic background influences the effect of thirdhand smoke exposure on anxiety and memory in Collaborative Cross mice

Growing evidence indicates that thirdhand smoke (THS) exposure induces many adverse health effects. However, it is unclear how THS exposure affects behavior and how host genetic background modulates phenotypic changes. Here we used the Collaborative Cross (CC) mouse population-based model to assess behavioral alterations immediately after THS exposure from 4 to 9 weeks of age. We first measured anxiety-like behavior in six strains using light/dark box combined with a custom multivariate mouse tracking system. We developed an anxiety risk scoring system based on anxiety-related traits and then evaluated the THS impact on them. THS exposure significantly decreased anxiety risk in CC019 ( P = 0.002) and CC051 ( P = 0.009), but increased anxiety risk in CC036 ( P < 0.001), while the other three strains did not show significant changes in anxiety-related traits. Such differences were driven by female mice for the six measures of anxiety-like behavior. Memory potential was measured in the same cohort of mice using the passive avoidance assay. Both THS-exposed male and female CC019 mice displayed significant memory loss compared to controls while no significant changes were found in the other five strains. This study provides strong evidence that THS exposure leads to strain-dependent changes in anxiety-like behavior and memory, suggesting that host genetic variations play a critical role in individual susceptibility to THS-induced effects.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1991

Demagnetization effects on forward and reverse thresholds of M-R memory elements

A refinement in the way hard-axis demagnetizing effects are treated in multilayer M-R memory elements brings experimental and calculated results into agreement for both the forward and reverse switching thresholds. In the improved model, the nonuniform rotation of the magnetization in the elements because of edge pinning is taken into account. The demagnetizing fields are treated as corrections to the hard-axis word field rather than an addition to the anisotropy constant.

Pohm, A. V.↗
DOE OSTI2021

Performance of CUDA Unified Memory in CMS Heterogeneous Pixel Reconstruction

The management of separate memory spaces of CPUs and GPUs brings an additional burden to the development of software for GPUs. To help with this, CUDA unified memory provides a single address space that can be accessed from both CPU and GPU. The automatic data transfer mechanism is based on page faults generated by the memory accesses. This mechanism has a performance cost, that can be with explicit memory prefetch requests. Various hints on the inteded usage of the memory regions can also be given to further improve the performance. The overall effect of unified memory compared to an explicit memory management can depend heavily on the application. In this paper we evaluate the performance impact of CUDA unified memory using the heterogeneous pixel reconstruction code from the CMS experiment as a realistic use case of a GPU-targeting HEP reconstruction software. We also compare the programming model using CUDA unified memory to the explicit management of separate CPU and GPU memory spaces.

Kortelainen, Matti J.↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗
DOE OSTI2020

Effect of directed aging on nonlinear elasticity and memory formation in a material

Disordered solids often change their elastic response as they slowly age. Using experiments and simulations, we study how aging disordered planar networks under an applied stress affects their nonlinear elastic response. We are able to modify dramatically the elastic properties of our systems in the nonlinear regime. Using simulations, we study two models for the microscopic evolution of properties of such a material; the first considers changes in the material strength, while the second considers distortions in the microscopic geometry. Both models capture different aspects of the experiments including the encoding of memories of the aging history of the system and the dramatic effects on the material’s nonlinear elastic properties. Our results demonstrate how aging can be used to create complex elastic behavior in the nonlinear regime.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Memory implications of the spin-value effect in soft multilayers

New multilayer permalloy materials with thin separation layers that have significantly increased M-R coefficients at room temperature have the potential for substantially increasing both the speed and density of M-R memories. An analysis in the following discussion shows that the bit density at a given performance level is related to the product of M-R response and sheet resistivity when operating at the current-density limit. With a doubling of both sheet resistivity and M-R response over existing materials, the bit area can be reduced by about a factor of 4. Alternatively, if the bit area is kept the same, signal output is increased by a factor of 4 and circuit time constants can be reduced by a factor of 16.

Pohm, A. V.↗
NASA NTRS2003

Mitigating Upsets in SRAM-Based FPGAs from the Xilinx Virtex 2 Family

Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.

SEE testing↗
NASA NTRS1988

Shape memory alloys: New materials for future engineering

Shape memory is a new material property. An alloy which experiences relative severe plastic deformation resumes its original shape again after heating by 10 to 100 C. Besides simple shape memory, in similar alloys there is the second effect where the change in shape is caused exclusively by little temperature change. In pseudo-elasticity, the alloy exhibits a rubber-like behavior, i.e., large, reversible deformation at little change in tension. Beta Cu and beta NiTi alloys have been used in practice. The probability is that soon alloys based on Fe will become available. Recently increasing applications for this alloy were found in various areas of technology, even medical technology. A review with 24 references is given, including properties, production, applications and fundamental principles of the shape memory effect.

Hornbogen, E.↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗
NASA NTRS1979

Cosmic ray-induced soft errors in static MOS memory cells

Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

Sivo, L. L.↗