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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Magnetic brightening and nanoscale imaging of spin-polarized helical edge modes in ZrTe 5

Efficient charge transport remains a fundamental challenge for nanoelectronic devices, as their performance is constrained by high dissipation and the impedance mismatch between high-frequency signal sources and nanoscale circuit interfaces. Although topologically protected helical edge modes offer a dissipationless and backscattering-resilient alternative, achieving nanoscale control over these modes requires direct visualization of their spatial electrodynamics, especially under high-frequency operation. Here, by utilizing cryogenic magneto-infrared scattering-type scanning near-field optical microscopy (cm-IR-sSNOM), we image spin-polarized helical edge channels in ZrTe 5 at the nanoscale, revealing magnetic-field-induced brightening as a high-frequency electrodynamic signature of robust topological edge modes. Operating at 1.8 K and under a magnetic field of up to 5 T, we observe the emergence of edge-state polarizability at infrared frequencies that is notably resilient to the magnetic gaps that typically quench d.c. and microwave edge transport. Our results reveal a topological ‘two-lane’ spatial reorganization in which an external magnetic field induces a spin-population imbalance between counterpropagating edge modes. Favoured helical branches are confined against physical boundaries to activate a net infrared near-field contrast. This electrodynamic response scales linearly with the number of atomic layers, which confirms that individual layers in ZrTe 5 preserve their discrete quantum spin Hall identities. These findings may be useful for developing topological spintronic devices, as the magnetic infrared tunability of helical edge channels provides a pathway for low-loss nanoscale interconnects and high-speed information processing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Strain-tunable magnetism at oxide domain walls

Applying stress to a ferroelastic material results in a nonlinear strain response as domains of different orientations mechanically switch. The ability to write, erase and move domain walls between such ferroelastic domains suggests a method for making nanoelectronics where the domain wall is the device. However, little is known about the magnetic properties of such domain walls. A fascinating model system is SrTiO 3 , where the ferroelastic domain walls display strain-tunable polarity and enhanced conductivity. Here, we reveal a long-range magnetic order with modulations along the ferroelastic domain walls in SrTiO 3 and SrTiO 3 -based heterointerfaces, which manifests itself as a striped pattern in scanning superconducting quantum interference device maps of the magnetic landscape. In conducting interfaces, the magnetism is coupled to itinerant electrons with clear signatures in magnetotransport measurements. The magnetic state is also coupled dynamically to the lattice and can be reversibly tuned by applying local external forces. As a result, this study raises the possibility of designing nanoscale devices based on domain walls where strain-tunable ferroelectric, ferroelastic and ferromagnetic orders may coexist.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantum simulation of an exotic quantum critical point in a two-site charge Kondo circuit

Tuning a material to the cusp between two distinct ground states can produce physical properties that are unlike those in either of the neighbouring phases. Advances in the fabrication and control of quantum systems have raised the tantalizing prospect of artificial quantum simulators that can capture such behaviour. A tunable array of coupled qubits should have an appropriately rich phase diagram, but realizing such a system with either tunnel-coupled semiconductor quantum dots or metal nanostructures has proven difficult. The challenge for scaling up to clusters or lattices is to ensure that each element behaves essentially identically and that the coupling between elements is uniform, while also maintaining tunability of the interactions. Here we study a nanoelectronic circuit comprising two coupled hybrid metal–semiconductor islands, combining the strengths of both materials to form a potentially scalable platform. The semiconductor component allows for controllable inter-site couplings at quantum point contacts, while the metal component’s effective continuum of states means that different sites can be made equivalent by tuning local potentials. The couplings afforded by this architecture can realize an unusual quantum critical point resulting from frustrated Kondo interactions. In this study, the observed critical behaviour matches theoretical predictions, verifying the success of our experimental quantum simulation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Schrödinger cat states of a nuclear spin qudit in silicon

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realize ‘Schrödinger cat’ states, which are superpositions of widely displaced coherent states that can be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, which are finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here, in this study, we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and we constitute logical Pauli operations for qubits encoded in the Schrödinger cat states. Our work demonstrates the ability to prepare and control non-classical resource states, which is a prerequisite for applications in quantum information processing and quantum error correction, using our scalable, manufacturable semiconductor platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Coherent electrical control of a single high-spin nucleus in silicon

Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, for example, in chemistry, medicine, materials science and mining. Nuclear spins also featured in early proposals for solid-state quantum computers and demonstrations of quantum search and factoring algorithms. Scaling up such concepts requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied on transducing electric signals into magnetic fields via the electron–nuclear hyperfine interaction, which severely affects nuclear coherence. In this work, we demonstrate the coherent quantum control of a single 123 Sb (spin-7/2) nucleus using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea proposed in 1961 but not previously realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction results in coherent nuclear spin transitions that are uniquely addressable owing to lattice strain. The spin dephasing time, 0.1 seconds, is orders of magnitude longer than those obtained by methods that require a coupled electron spin to achieve electrical driving. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable, nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.

42 ENGINEERING↗
DOE OSTI2022

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31 P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterized using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Because electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Nanoscale imaging of phonon dynamics by electron microscopy

Spatially resolved vibrational mapping of nanostructures is indispensable to the development and understanding of thermal nanodevices, modulation of thermal transport and novel nanostructured thermoelectric materials. Through the engineering of complex structures, such as alloys, nanostructures and superlattice interfaces, one can significantly alter the propagation of phonons and suppress material thermal conductivity while maintaining electrical conductivity. There have been no correlative experiments that spatially track the modulation of phonon properties in and around nanostructures due to spatial resolution limitations of conventional optical phonon detection techniques. Here we demonstrate two-dimensional spatial mapping of phonons in a single silicon–germanium (SiGe) quantum dot (QD) using monochromated electron energy loss spectroscopy in the transmission electron microscope. Tracking the variation of the Si optical mode in and around the QD, we observe the nanoscale modification of the composition-induced red shift. We observe non-equilibrium phonons that only exist near the interface and, furthermore, develop a novel technique to differentially map phonon momenta, providing direct evidence that the interplay between diffuse and specular reflection largely depends on the detailed atomistic structure: a major advancement in the field. Our work unveils the non-equilibrium phonon dynamics at nanoscale interfaces and can be used to study actual nanodevices and aid in the understanding of heat dissipation near nanoscale hotspots, which is crucial for future high-performance nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Peptide programming of supramolecular vinylidene fluoride ferroelectric phases

Ferroelectric structures have spontaneous macroscopic polarization that can be inverted using external electric fields and have potential applications including information storage, energy transduction, ultralow-power nanoelectronics and biomedical devices. These functions would benefit from nanoscale control of ferroelectric structure, the ability to switch polarization with lower applied fields (low coercive field) and biocompatibility. Soft ferroelectrics based on poly(vinylidene fluoride) (PVDF) have a thermodynamically unstable ferroelectric phase in the homopolymer, complex semi-crystalline structures, and high coercive fields. Here, in this work, we report on ferroelectric materials formed by water-soluble molecules containing only six VDF repeating units covalently conjugated to a tetrapeptide, with the propensity to assemble into the β-sheet structures that are ubiquitous in proteins. This led to the discovery of ribbon-shaped ferroelectric supramolecular assemblies that are thermodynamically stable with their long axes parallel to both the preferred hydrogen-bonding direction of β-sheets and the bistable polar axes of VDF hexamers. Relative to a commonly used ferroelectric copolymer, the biomolecular assemblies exhibit a coercive field that is two orders of magnitude lower, as the result of supramolecular dynamics, and a similar level of remnant polarization, despite having a peptide content of 49 wt%. Furthermore, the Curie temperature of the assemblies is about 40 °C higher than that of a copolymer containing a similar amount of VDF. This supramolecular system was created using a biologically inspired strategy that is attractive in terms of sustainability and that could lead to new functions for soft ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Ferroelectric Domain Studies of Patterned (001) BiFeO 3 by Angle-Resolved Piezoresponse Force Microscopy

We have studied the ferroelectric domains in (001) BiFeO 3 (BFO) films patterned into mesas with various aspect ratios, using angle-resolved piezoresponse force microscope (AR-PFM), which can image the in-plane polarization component with an angular resolution of 30 degrees. We observed not only stable polarization variants, but also meta-stable polarization variants, which can reduce the charge accumulated at domain boundaries. We considered the number of neighboring domains that are in contact, in order to analyze the complexity of the ferroelectric domain structure. Comparison of the ferroelectric domains from the patterned and unpatterned regions showed that the elastic relaxation induced by removal of the film surrounding the mesas led to a reduction of the average number of neighboring domains, indicative of a decrease in domain complexity. Finally, we also found that the rectangular BFO patterns with high aspect ratio had a simpler domain configuration and enhanced piezoelectric characteristics than square-shaped mesas. Manipulation of the ferroelectric domains by controlling the aspect ratio of the patterned BFO thin film mesas can be useful for nanoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents

Abstract We study heat dissipation of a multi-wall carbon nanotube (MWCNT) device fabricated from two crossed nanotubes on a SiN x substrate under the influence of a constant (DC) electric bias. By monitoring the temperature of the substrate, we observe negligible Joule heating within the nanotube lattice itself and instead heating occurs in the insulating substrate directly via a remote-scattering heating effect. Using finite element analysis, we estimate a remote heating parameter, β , as the ratio of the power dissipated directly in the substrate to the total power applied. The extracted parameters show two distinct bias ranges; a low bias regime where about 85% of the power is dissipated directly into the substrate and a high bias regime where β decreases, indicating the onset of traditional Joule heating within the nanotube. Analysis shows that this reduction is consistent with enhanced scattering of charge carriers by optical phonons within the nanotube. The results provide insights into heat dissipation mechanisms of Joule heated nanotube devices that are more complex than a simple heat dissipation mechanism dominated by acoustic phonons, which opens new possibilities for engineering nanoelectronics with improved thermal management.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Abstract The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS 2 transistors back-gated by single-layer polycrystalline PbZr 0.35 Ti 0.65 O 3 . The devices exhibit current switching ratios up to 8 × 10 6 within an ultra-low gate voltage window of $$V_{{{\mathrm{g}}}} = \pm \! 0.5$$ V g = ± 0.5 V and subthreshold swing (SS) as low as 9.7 mV decade −1 at room temperature, transcending the 60 mV decade −1 Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Stacking polymorphism of PtSe 2 : its implication to layer-dependent metal-insulator transitions

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examine the structural stability and interlayer binding properties of PtSe 2 . Our DMC study reveals that AA and AB-r bilayer stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT calculations with the r 2 SCAN+rVV10 functional uncover pronounced stacking polymorphism in few-layer PtSe 2 , driven by degenerate AA and AB-r interfaces, which leads to substantial band gap variations across different stacking configurations. This polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe 2 . Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of PtSe 2 , advancing our understanding of its fundamental properties and refining theoretical models for practical applications in nanoelectronic devices.

Electronic materials↗
DOE OSTI2019

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Owing to their low dimensionality, two-dimensional semiconductors, such as monolayer molybdenum disulfide, have a range of properties that make them valuable in the development of nanoelectronics. For example, the electronic bandgap of these semiconductors is not an intrinsic physical parameter and can be engineered by manipulating the dielectric environment around the monolayer. Here in this paper we show that this dielectric-dependent electronic bandgap can be used to engineer a lateral heterojunction within a homogeneous MoS 2 monolayer. We visualize the heterostructure with Kelvin probe force microscopy and examine its influence on electrical transport experimentally and theoretically. We observe a lateral heterojunction with an approximately 90 meV band offset due to the differing degrees of bandgap renormalization of monolayer MoS 2 when it is placed on a substrate in which one segment is made from an amorphous fluoropolymer (Cytop) and another segment is made of hexagonal boron nitride. This heterostructure leads to a diode-like electrical transport with a strong asymmetric behaviour.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

Murray, Conal E. (ORCID:0000000199014290)↗
DOE OSTI2013

High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers

Thermoelectric transport in semiconductors is usually considered under small thermal gradients and when it is dominated by the role of the majority carriers. Not much is known about effects that arise under the large thermal gradients that can be established in high-temperature, small-scale electronic devices. Here, we report a surprisingly large asymmetry in self-heating of symmetric highly doped silicon microwires with the hottest region shifted along the direction of minority carrier flow. We show that at sufficiently high temperatures and strong thermal gradients (,1 K/nm), energy transport by generation, transport and recombination of minority carriers along these structures becomes very significant and overcomes convective energy transport by majority carriers in the opposite direction. These results are important for high-temperature nanoelectronics such as emerging phase-change memory devices which also employ highly doped semiconducting materials and in which local temperatures reach ,1000 K and thermal gradients reach ,10–100 K/nm.

APPLIED PHYSICS↗
DOE OSTI2015

Electronic transport in two-dimensional high dielectric constant nanosystems

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

The emergence of two-dimensional metallic states at the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO over layers. This insulator-to-metal transition can be explained through the polar catastrophe mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified polar catastrophe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first principles calculations indicate that for nanowire heterostructure geometries a one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity in LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density will decay laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier behavior between 1D and 2D conductivity. Furthermore, our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Ordering in bio-inorganic hybrid nanomaterials probed by in situ scanning transmission X-ray microscopy

Here, phospholipid bilayer coated Si nanowires are one-dimensional (1D) composites that provide versatile bio-nanoelectronic functionality via incorporation of a wide variety of biomolecules into the phospholipid matrix. The physiochemical behaviour of the phospholipid bilayer is strongly dependent on its structure and, as a consequence, substantial modelling and experimental efforts have been directed at the structural characterization of supported bilayers and unsupported phospholipid vesicles; nonetheless, the experimental studies conducted to date have exclusively involved volume-averaged techniques, which do not allow for the assignment of spatially resolved structural variations that could critically impact the performance of the 1D phospholipid-Si NW composites. In this manuscript, we use scanning transmission X-ray microscopy (STXM) to probe bond orientation and bilayer thickness as a function of position with a spatial resolution of ~30 nm for Δ9-cis 1,2-dioleoyl-sn-glycero-3-phosphocholine layers prepared Si NWs. When coupled with small angle X-ray scattering measurements, the STXM data reveal structural motifs of the Si NWs that give rise to multi-bilayer formation and enable assignment of the orientation of specific bonds known to affect the order and rigidity of phospholipid bilayers.

36 MATERIALS SCIENCE↗