Development of large-internal-surface-area nickel-metal plaques Final report, Jun. 18, 1964 - Sep. 30, 1965
Large internal surface area porous nickel metal plaques for rechargeable cadmium electrodes to improve nickel-cadmium batteries
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Large internal surface area porous nickel metal plaques for rechargeable cadmium electrodes to improve nickel-cadmium batteries
Stress corrosion reflux capsule tests of niobium alloy in potassium
Mechanical and physical properties determined for explosive bonded refractory/austenitic metal combinations
Crystallization kinetics of molten binary and ternary oxide systems
Cadmium sulfide photovoltaic film cells
Emissivity coatings for low temperature spacecraft radiators
Recovery of bacteria, bacillus globigii spores from balsa wood and soluble plastic and toxicity of plastics - contamination studies
Orbital receiving system for detection of low frequency radio energy from planet Jupiter
Complex discriminative behavior, fixed ratio reinforcement of large units of behavior and deferred reinforcement studied in chimpanzees
Interrelations of signal detection and operant research
Gravitational mass sensor - piezoresistive and barium titanate transducers, and torsional stress sensors
Electrical properties of high reliability computer grade miniature capacitors
High capacity nonaqueous secondary battery development - lithium deposition and cycling, ionic solvation, cathode construction and discharge efficiency, and solvent purification
Development of electric switchgear for space nuclear electric systems - vacuum interrupter, actuator, and test facilities
Closed die forging techniques for high strength aluminum and titanium alloys and maraging steel for use in space
Axisymmetric Hall current accelerator as electric spacecraft propulsion system
Pumping of getter-ion pumps at low pressure, crossed field mass spectrometer, secondary electron emission, angular distribution of Auger electrons, and gaseous adsorption
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices