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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Ground-based mm-wave emission spectroscopy for the detection and monitoring of stratospheric ozone

The molecular rotational spectrum of ozone is quite rich in the mm-wave region from 50 to 300 GHz. An apparatus, which was developed primarily for detection and measurement of stratospheric ClO and other trace molecules, is found to be well suited also for the observation of ozone lines. The collecting antenna of the apparatus is a simple mm-waveguide feedhorn. The detector is a superheterodyne mixer using a special high frequency Schottky diode and a klystron local oscillator. The spectrometer is a 256 channel filter bank with 1 MHz resolution per channel. The apparatus is believed to be the first ground-based mm-wave instrument having the capability of obtaining data of sufficient quality to make use of the inversion technique. The ground based radio technique is most sensitive to changes in vertical distribution in the region above 25 km, a region which is difficult to sample by other techniques.

Parrish, A.↗
NASA NTRS1982

Imaging antenna arrays

Many millimeter and far-infrared imaging systems are limited in sensitivity and speed because they depend on a single scanned element. Because of recent advances in planar detectors such as Schottky diodes, superconducting tunnel junctions, and microbolometers, an attractive approach to this problem is a planar antenna array with integrated detectors. A planar line antenna array and optical system for imaging has been developed. The significant advances are a 'reverse-microscope' optical configuration and a modified bow-tie antenna design. In the 'reverse-microscope' configuration, a lens is attached to the bottom of the substrate containing the antennas. Imaging is done through the substrate. This configuration eliminates the troublesome effects of substrate surface waves. The substrate lens has only a single refracting surface, making possible a virtually aplanatic system, with little spherical aberration or coma. The array is characterized by an optical transfer function that is easily measured. An array with 19 dB crosstalk levels between adjacent antennas has been tested and it was found that the array captured 50 percent of the available power. This imaging system was diffraction limited.

Rutledge, D. B.↗
NASA NTRS1983

EBIC investigation of hydrogenation of crystal defects in EFG solar silicon ribbons

Changes in the contrast and resolution of defect structures in 205 Ohm-cm EFG polysilicon ribbon subjected to annealing and hydrogenation treatments were observed in a JEOL 733 Superprobe scanning electron microscope, using electron beam induced current (EBIC) collected at an A1 Schottky barrier. The Schottky barrier was formed by evaporation of A1 onto the cleaned and polished surface of the ribbon material. Measurement of beam energy, beam current, and the current induced in the Schottky diode enabled observations to be quantified. Exposure to hydrogen plasma increased charge collection efficiency. However, no simple causal relationship between the hydrogenation and charge collection efficiency could be inferred, because the collection efficiency also displayed an unexpected thermal dependence. Good quality intermediate-magnification (1000X-5400X) EBIC micrographs of several specific defect structures were obtained. Comparison of grown-in and stress-induced dislocations after annealing in vacuum at 500 C revealed that stress-induced dislocations are hydrogenated to a much greater degree than grown-in dislocations. The theoretical approximations used to predict EBIC contrast and resolution may not be entirely adequate to describe them under high beam energy and low beam current conditions.

Sullivan, T.↗
NASA NTRS1981

433 micron laser heterodyne observations of galactic CO from Mauna Kea

A submillimeter heterodyne radiometer, developed for astronomical applications, uses an optically pumped laser local oscillator and a quasi-optical Schottky diode mixer. The resultant telescope-mounted system, which has a noise temperature less than 4000 K (double sideband) and high frequency and spatial resolution, has been used to detect the J = 6 to 5 rotational transition of carbon monoxide at 434 micrometers in the Orion molecular clouds. The measurements, when compared with previous millimeter-wave data, indicate that the broad carbon monoxide emission feature is produced by an optically thin gas whose temperature exceeds 180 K.

Buhl, D.↗
NASA NTRS1983

Submillimeter-wave receivers - A status report

A development status assessment is presented for the work of U.S. and Western European research groups on heterodyne sub-mm receivers in the 300-1000 GHz frequency range. The applications driving sub-mm receiver and local oscillator source technologies are radio astronomy, atmospheric measurements, plasma diagnostics, and laboratory spectroscopy. Progress is concentrated in two areas, cooled Schottky diode mixers and solid state local oscillators employing frequency multipliers.

Wilson, W. J.↗
NASA NTRS1984

A 150 Micron Heterodyne Spectrometer for Airborne Astronomy

The advantages of heterodyne detection for high resolution spectroscopy were long known to radio astronomers. Heterodyne spectroscopy was productive at submillimeter wavelengths, but its extension to shorter submillimeter and far-infrared (FIR) wavelengths was hampered by inadequate mixers and local oscillators. A significant advance in FIR receiver technology was demonstrated using an optically-pumped FIR laser and a Schottky-diode mixer. Any similar spectrometer intended for airborne observations at shorter wavelengths must be compatible with the more restrictive aircraft environment. The effectiveness of the design of a FIR heterodyne spectrometer was verified in ground-based observations with a prototype version. The airborne successor is even more compact, and has a much broader spectral coverage. Flight tests are scheduled for the new instrument.

Betz, A.↗
NASA NTRS1985

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Mathur, G.↗
NASA NTRS1985

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

Valco, G. J.↗
NASA NTRS1985

Single-Event Upset (SEU) model verification and threshold determination using heavy ions in a bipolar static RAM

Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and O ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.

Zoutendyk, J. A.↗
NASA NTRS1985

Far-infrared heterodyne spectroscopy

A new far-infrared heterodyne spectrometer has been built for ground-based observations at the Cassegrain focus. The receiver, which features a Schottky-diode mixer and a laser local oscillator, was used in January 1984, to detect the 809 GHz fine-structure line of neutral carbon in OMCl. A second-generation version of the spectrometer is now being constructed for airborne observations between 600 and 1500 GHz.

Betz, A. L.↗
NASA NTRS1986

Instrumentation for submillimeter spectroscopy; Proceedings of the Meeting, Cannes, France, December 5, 6, 1985

The design and performance of spectroscopic instruments for submm-wave astronomy are discussed in reviews and reports. Topics examined include superconducting mixers, Schottky-diode mixers, local oscillators, antennas and quasi-optical components, spectrometry, and systems aspects. Special emphasis is given to candidate components for the 8-m heterodyne FIR and Submm Space Telescope being developed by ESA.

Kollberg, Eric↗
NASA NTRS1986

The U.C. Berkeley Space Sciences Laboratory and Department of Physics Submillimeter Receiver

The UCB submm heterodyne receiver is a complete system for high-resolution astronomical spectroscopy in the 350-micron and 450-micron atmospheric windows. This compact system mounts directly at the Cassegrain focus of large optical and IR telescopes. It consists of a laser local oscillator, open structure mixer, quasi-optical coupling system, a broad-band IF system, and an acoustooptical spectrometer. The local oscillator is a 1-m-long submm laser optically pumped by a CO2 laser. The mixer is a quasi-optical corner-cube antenna structure and Schottky diode. The mixer is currently operated at room temperature, and its performance at 77 K is being evaluated. The system noise temperature is less than 7000 K SSB during observations.

Harris, A. I.↗
NASA NTRS1986

Measurements of the cosmic background radiation

Data on the cosmic microwave background radiation obtained with a maser at 12 mm and a Schottky diode mixer at 3 mm are presented. The dipole anisotropy, apparently due to our motion, has been measured sufficiently well to determine our direction of motion within two degrees. The results show that the Galaxy is moving in a direction that is about 44 deg from the center of the Virgo cluster.

Lubin, P.↗
NASA NTRS1988

Studies Of Single-Event-Upset Models

Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.

Zoutendyk, J. A.↗
NASA NTRS1988

A dual-frequency 183/380 GHz receiver for airborne applications

A complete dual-frequency cryogenic heterodyne receiver operating at 183 and 380 GHz is described. The cooled mixers are whisker-contacted GaAs Schottky diodes mounted in reduced-height fundamental-mode waveguide. The local oscillators are Gunn-oscillator-driven multipliers using GaAs varactor diodes as the harmonic generators. Quasi-optical techniques are used extensively for coupling the remote and local oscillator signals into the mixers. The overall system double side-band (DSB) noise temperature is 320 K for the 183-GHz receiver and 650 K for the 380 GHz receiver.

Batelaan, Paul D.↗
NASA NTRS1989

Plasma deposited silicon nitride for indium phosphide encapsulation

The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

Valco, G. J.↗
NASA NTRS1990

Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Infrared radiation at wavelengths of 1-2 microns has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3 percent is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5-nm silicide thickness.

Fathauer, R. W.↗
NASA NTRS1991

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗