Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silane”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

The effect of grain boundaries on the resistivity of polycrystalline silicon

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Fripp, A. L., Jr.↗
NASA NTRS1973

A novel imide synthesis via silyl-blocked diamines

Efforts have resulted in the production of some trimethylsilyl-blocked diamines, which have been employed in a novel manner for the synthesis of polyimide model compounds. Three new silicon-containing diamides were prepared by reacting 1 mol of bis-/N, N prime-bis (trimethylsilyl) -4-aminophonyl/-disubstituted silanes with 2 mol of phthalic anhydride, thus establishing the reactivity of fully silylated diamides in imide formation.

Pratt, J. R.↗
NASA NTRS1975

Dependence of resistivity on the doping level of polycrystalline silicon

The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Fripp, A. L.↗
NASA NTRS1975

Development of an economical silicon solar cell

The growth of electronically viable silicon films on inexpensive foreign substrates is studied, with the objective of creating a technology to radically reduce the overall cost of the silicon employed in photovoltaic solar energy conversion. The approach employed is to enhance crystalline ordering during film nucleation by confining arriving silicon atoms to a narrow band traveling across a substrate, i.e., the Lateral Growth Technique (LGT). The efforts have employed physical vapor deposition of silicon in a vacuum evaporator on glass and metal substrates with both slit masks and single defining edges, and subsequent chemical vapor deposition (CVD) of thicker films on these thin film structures by pyrolysis of silane at higher temperatures.

Lindmayer, J.↗
NASA NTRS1975

Dopant gas effect on silicon chemical vapor depositions: A surface potential model

A surface potential model is proposed to consistently explain the known dopant gas effects on silicon chemical vapor deposition. This model predicts that the effects of the same dopant gases on the diamond deposition rate using methane and carbon tetrachloride should be opposite and similar to those of silane, respectively. Available data are in agreement with this prediction.

Chang, C. A.↗
NASA NTRS1976

Comparison of type A and C Fluorinated Ethylene Propylene (FEP) as cover materials for silicon solar cells

Fluorinated ethylene propylene film (FEP, 0.0127 cm thick) was heat and pressure laminated to silicon solar cells as a low cost substitute for quartz covers. The FEP-C, treated on one side for bonding, was compared to FEP-A, an untreated FEP. With FEP-A, a silane adhesion promoter was applied to the cells. The FEP-C covers delaminated during accelerated temperature-humidity testing and Earth environmental exposure testing; FEP-A covers were unchanged. No differences were observed in peel tests, but FEP-A is superior in its resistance to tearing and in retention of transmission properties after exposure to ultraviolet radiation.

Broder, J. D.↗
NASA NTRS1976

Scattering of high-velocity He atoms by C/CH3/4 and Si/CH3/4

Fast helium beams are employed to probe short-range potentials in tetramethylmethane and tetramethylsilane, and throw light on the relations between these more complex reactions and such reactions as He-CH4 and He-SiH4. Earlier work on scattering of helium and argon beams by polyatomic molecules (fluorinated methanes, sulfur hexafluoride, silane, germane) are at variance with these results, as neither of the above systems can be represented as a cluster of four CH4 molecules, Effective He-H potentials based on scattering data are identical for the two systems studied but are much larger than the corresponding CH4 potential. A model in which centers of force are located along the bonds rather than at the nuclei is suggested for further testing.

Amdur, I.↗
NASA NTRS1976

New aromatic silicon-containing polyamides

The experiments described were aimed at studying systematically the effect of silyl linkages on the thermogravimetric and thermomechanical properties of aromatic polyamides. Specifically, 18 aromatic silicon-containing polyamides were synthesized via interfacial polymerization of six silicon-containing diacid chlorides with 3,3-prime-diaminodiphenylmethane, 3,3-prime-diaminobenzophenone, and 1-(3-prime-aminobenzyl)-4-(3-double prime-aminobenzoyl)benzene. All polyamides were soluble in m-cresol and N,N-dimethylacetamide, and had glass transition temperatures between 178 and 254 C. Thermogravimetric analysis conducted in static air on film specimens showed 5 and 10 percent weight losses between 331 and 400 C and 354 and 440 C, respectively. The potential gain in processability engendered by incorporation of silane substituents was offset in most cases by substantial losses in thermo-oxidative stability.

Pratt, J. R.↗
NASA NTRS1977

Thermal expansion of an epoxy-glass microsphere composite

The thermal expansion of a composite of epoxy (diglycidyl ether of bisphenol A) and solid glass microspheres was investigated. The microspheres had surfaces which were either untreated or treated with a silicone release agent, an epoxy coupling agent, or a general purpose silane coupling agent. Both room temperature (about 300 K) and elevated temperature (about 475 K) cures were used for the epoxy. Two microsphere size ranges were used, about 50 microns, which is applicable in filled moldings, and about 125 microns, which is applicable as bond line spacers. The thermal expansion of the composites was measured from 300 to 350 K or from 300 to 500 K, depending on the epoxy cure temperature. Measurements were made on composites containing up to .6 volume fraction microspheres. Two predictive models, which required only the values of thermal expansion of the polymer and glass and their specific gravities, were tested against the experimental data. A finite element analysis was made of the thermal strain of a composite cell containing a single microsphere surrounded by a finite-thickness interface.

Price, H. L.↗
NASA NTRS1978

Floating substrate process: Large-area silicon sheet task low-cost solar array project

Supercooling of silicon-tin alloy melts was studied. Values as high as 78 C at 1100 C and 39 C at 1200 C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050 C and 1150 C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200 C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters.

Garfinkel, M.↗
NASA NTRS1978

Process feasibility study in support of silicon material task 1

Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

Li, K. Y.↗
NASA NTRS1979

Investigation of Test Methods, Material Properties, and Processes for Solar Cell Encapsulants

During this quarter the technical activities were directed toward the reformulation of ethylene/vinyl acetate copolymer for use as a compound in solar cell module fabrication. Successful formulations were devised that lowered the temperature required for cure and raised the gel content. A major volatile component was also eliminated (acrylate crosslinking agent) which should aid in the production of bubble free laminates. Adhesive strengths and primers for the bonding of ethylene/vinyl acetate to supersyrate and substrate materials was assessed with encouraging results. The incorporation of silane compounds gave high bond strengths. A survey of scrim materials was also conducted.

Source record↗
NASA NTRS1978

Electricity from sunlight

The paper discusses a number of new unconventional processes proposed for the low-cost production of silicon for solar cells. Consideration is given to: (1) the Battelle process (Zn/SiCl4), (2) the Battelle process (SiI4), (3) the Silane process, (4) the Motorola process (SiF4/SiF2), (5) the Westinghouse process (Na/SiCl4), (6) the Dow Corning process (C/SiO2), (7) the AeroChem process (SiCl4/H atom), and the Stanford process (Na/SiF4). Preliminary results indicate that the conventional process and the SiI4 processes cannot meet the project goal of $10/kg by 1986. Preliminary cost evaluation results for the Zn/SiCl4 process are favorable.

Yaws, C. L.↗
NASA NTRS1980

Photonitride passivating coating for IC's

Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.

Hall, T. C.↗
NASA NTRS1982

Plasma Deposition of Amorphous Silicon

Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

Calcote, H. F.↗
NASA NTRS1982

Binders for Thermal-Control Coatings

Methyl trialkoxysilane hydrolysates have been found to be superior binders for radiative thermal-control coatings. Using sprayed test panels, candidate coating formulations were optimized with respect to binder/ pigment radio, ethanol content, pigment particle size, coating thickness, and curing conditions. Binders are made from monomers of trialkoxy-silanes or chain-extended alkoxysilanes. Monomers are believed to polymerize to ladder-type structures like methyl silicone.

Patterson, W. J.↗
NASA NTRS1982

Low-Waste Purification of Silicon

Ultra-high-purity silicon required for solar cells, transistors and integrated circuits can be produced from metallurgical grade silicon by formation and pyrolysis of silane gas in continuous-flow process that maximizes product purity with minimum amount of equipment. Integrated process recycles unreacted and byproduct materials, minimizing material losses and simplifying waste disposal. Ensures effective removal of impurities, including boron.

Breneman, W. C.↗