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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Medium-Voltage Isolated Auxiliary Power Supply Design for High Insulation Capability, Ultra-Low Coupling Capacitance, and Small Size

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as small as possible. However, the high insulation and low coupling capacitance requirements, considering the high voltage and high dv / dt , are constraints of size reduction. This article proposes an MV IAPS design for high insulation capability, ultra-low coupling capacitance, and small size. The topology selection, efficiency, load regulation, coupling capacitance, and size reduction considerations are discussed. A 2.5 W MV IAPS is designed and built for a 10 kV SiC mosfet -based 13.8 kV/100 kW three-phase converter, achieving a partial discharge (PD) inception voltage of higher than 15 kV rms, ultra-low coupling capacitance of 1.03 pF, and smaller size than that of the commercial products as well as the state-of-art research prototypes. Experimental results of PD test, 10 kV SiC mosfet -based half-bridge test, and 13.8 kV/100 kVA three-phase converter full rating test are conducted for design validation.

42 ENGINEERING↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Mechanistic modeling of lifetime distribution of SiC/SiC composite claddings

Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites have emerged as a new material candidate for fuel claddings in light water reactors. Recent studies showed that the load capacity of SiC/SiC materials exhibits a considerable statistical variation. Therefore, reliability analysis plays a critical role in design of SiC/SiC composite claddings. Here, this paper presents a probabilistic model for the lifetime distribution of SiC/SiC composites. The model is anchored by a multiaxial stress-based failure criterion and subcritical damage accumulation mechanism. Based on the kinetics of subcritical damage growth, the lifetime distribution of a laboratory test specimen for any given loading history can be calculated. A finite weakest-link model is used to extrapolate the lifetime distribution of test specimens to full-length claddings. It is shown that the damage accumulation mechanism has a strong influence on the lifetime distribution of the cladding. This finding highlights the importance of understanding the static fatigue behavior of SiC/SiC composites. The present analysis also demonstrates an intricate length effect on the failure probability of the cladding, which is expected to play a crucial role in design extrapolation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2024

Impact of temperature variations on BISON predictions of Ag release in AGR-1 and AGR-2 experiments

Understanding and quantifying the release of fission products like silver (Ag) from TRistructural ISOtropic (TRISO) fuel particles is important to assess the safe operation of advanced high temperature reactors. Although the silicon carbide (SiC) layer of TRISO particles is effective as the main fission product barrier, Ag can be released from intact TRISO particles. A mechanistic model for the effective Ag diffusivity, D eff , was previously developed as a function of temperature and microstructure variables informed by atomistic modeling of Ag diffusivity on the mesoscale. Here in this study, we use this model to explore how experimental temperature uncertainties impact the overall predicted Ag release. This analysis shows that temperature uncertainties have a significant impact on the overall Ag release predictions. Furthermore, we show that the time average volume average temperature (TAVA) temperature is not an appropriate proxy for temperature histories to predict fission product release. We attribute this to the Arrhenius dependence of Ag diffusivity with respect to temperature. The detailed temperature histories, therefore, provide the most accurate results are are of most importance for modeling efforts. Overall, this work shows the importance of considering the experimental uncertainty of the temperature on computational predictions of fission product transport and release and the need for more accurate temperature histories from future experiments.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

A New Class of SiC Power MOSFETs with Record-Low Resistance

Silicon carbide (SiC) power transistors are used in the main traction inverter of electric vehicles (EVs). Tesla began installing SiC power MOSFETs in 2017, and has now produced 4.8 million EVs containing over 169 million SiC power MOSFETs. Looking ahead, the worldwide EV market is projected to exceed 50 million vehicles per year by 2030 (Reuters, Oct. 25, 2022). This will create a demand for over two billion SiC power MOSFETs per year. Our program aims to double the efficiency of today's commercial power MOSFETs. This will cut the number of MOSFETs per EV in half, reducing cost, simplifying assembly, decreasing weight, and increasing vehicle reliability through reduced parts count. Our approach is to apply innovative design and advanced processing to increase the density of current-controlling channels in SiC power MOSFET. We have developed two new MOSFET devices, each of which increases the channel density by a factor of six over today's best commercial MOSFETs. This required implementing new fabrication processes, creating new device designs, and integrating the processing steps and device designs into a manufacturable technology. In this project we have developed two innovative devices: (i) a novel three-dimensional structure, the "tri-gate MOSFET," and (ii) a deeply-scaled, fully self-aligned trench MOSFET, the "IMOSFET". Both products were experimentally demonstrated during this project and meet the program goals of increased efficiency relative to the current state-of-the art commercial products. In the process we have generated significant IP, with two US patents issued and three applications pending. We have also published three journal articles and given reports on this technology at seven international conferences. The success of this program has led to significant follow-on funding from industry. In May 2023 Purdue University signed a five-year R&D contract with GlobalFoundries to transfer our novel technology to commercial production. With headquarters in Malta, NY, Global Foundries is one of the largest pure-play silicon foundries in the world, with annual revenue of $\$$8.1B. Their SiC foundry will be built around the next-generation 200-mm diameter SiC wafers, which will double the number of die per wafer and reduce per-die production cost.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Atomistic and mesoscale simulations to determine effective diffusion coefficient of fission products in SiC

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) particles serves as the barrier to prevent escape of fission products produced in the fuel kernel. Knowing the diffusion coefficient of fission products through SiC is critical to determining whether fission gas can escape from the particle. It has been observed in experiments that Ag accumulated in grain boundaries and triple junctions in SiC. It is hypothesized that grain boundary diffusion is the primary pathway by which fission products penetrate the SiC layer. In this report, the effective diffusion coefficient of the fission product Ag through the grain boundary network is calculated using a combination of atomistic and phase-field methods. The grain boundary diffusion coefficient is calculated using molecular dynamics simulations. The bulk diffusion coefficient is determined using a combination of density functional theory and nudged elastic band methods. An effective diffusion coefficient is calculated, accounting for the grain structure using a phase-field method. The effective diffusion coefficient will be incorporated into Bison and fission product release calculations are compared to available experimental data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Device for steam cladding oxidation testing at TREAT

To compare the chemical degradation of conventional zirconium alloy (Zry) cladding to advance silicon carbide (SiC) cladding in a post loss of coolant accident (LOCA) environment, new nuclear testing capabilities are necessary. The Transient Reactor Test (TREAT) Facility at Idaho National Laboratory (INL) has matured its transient fuel testing capabilities since its 2017 restart. The most recent experiment architecture is the Transient Water Irradiation System in TREAT (TWIST), which is designed to support qualification of accident tolerant fuels in light water reactors. INL has designed and analyzed a natural circulation steam flow modification for TWIST to produce prototypic conditions of cladding oxidation. The in-situ device will be electrically heated to drive natural circulation. Moreover, the SiC cladding requires heating above 1700 °C to observe failure, thus internal prototypic nuclear heating with radiation effects will be used. Thermal hydraulic analysis with RELAP5-3D (Reactor Excursion and Leak Analysis Program) estimated steam fluxes greater than 50 mg cm −2 s −1 can be achieved. These fluxes are adequate to test Zry cladding according to draft regulatory guides and to test SiC cladding according to past experiments.

Oxidation↗
DOE OSTI2024

Erosion resistance test of SiC mirror sample for ITER divertor VUV spectrometer

A series of tests have been performed to validate the resistance of the Silicon Carbide (SiC) mirror as the first mirror material of ITER VUV spectrometers to all ITER environmental conditions. Here we focused on the erosion (and deposition) of the SiC mirror sample caused by high-energy neutral particles. The flux of neutral particles reaching the first mirror was calculated using the ZEMAX software with a simplified entrance duct model. In the calculation, the particle flux reaching the first wall is necessary and the previously reported values derived from the SOLPS calculations were used. Based on this estimated particle flux, the erosion resistance tests were performed to check the erosion effect due to the high-energy neutral particles on the first mirror of ITER divertor VUV spectrometer. In the experiment, erosion was induced by exposing the SiC mirror sample to hydrogen and deuterium plasmas (and ions). The target fluence of incident ions in experiment is based on the estimation of the flux of neutral particles in ITER. The surface shape, composition, erosion depth, and surface roughness were measured to check the damage of the mirror surface after erosion test. Based on simulations and erosion resistance tests, it was concluded that the SiC mirror can be used as the first mirror of ITER divertor VUV spectrometer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Investigating Grain Structure and Microcracking in SiCf-SiCm Composites Using 4D-STEM

Silicon carbide (SiC) fiber-reinforced SiC matrix composites (SiCf-SiCm) are promising materials for accident-tolerant fuel (ATF) cladding in light water reactors. This paper, using four-dimensional scanning transmission electron microscopy (4D-STEM), studied the microstructure of SiCf-SiCm at nanoscale and provided grain statistics at the CVI/fiber region. Here, the results reveal that CVI region mainly contain irregular sub-micron grains (115 nm to 1800 nm) with a preferred orientation, while the fiber region has nano equiaxed grains (21 nm to 78 nm) with random orientations. Centered dark field imaging over the fiber regions verified the grain size measurement by 4D-STEM. Through 4D-STEM virtual dark field imaging and orientation mapping, intragranular propagation was identified as the fracture mechanism for a microcrack observed within the CVI region. The amorphous pyrolytic carbon layer was also shown to effectively arrest the microcrack.

4D-STEM↗
DOE OSTI2025

Micromechanical response of SiC-OPyC layers in TRISO fuel particles

Tristructural isotropic (TRISO)–coated particle fuel is a proposed fuel for multiple advanced reactor concepts. The performance of the particle depends on whether the silicon carbide (SiC) layer remains intact to prevent the release of metallic and gaseous fission products. Mechanical fracture of the SiC layer is a potential failure mode under various fuel configurations and operating environments, including the potential transmission of matrix-originating cracks through TRISO particles. Furthermore, this study uses instrumented indentation techniques on cross-sectioned surrogate particles to examine the mechanical stability of the critical interface between SiC and the outer pyrolytic carbon (OPyC) layer. The observed behavior at the interface is rationalized by examining the radially dependent fracture behavior of the SiC layer and performing a numerical analysis to quantify the residual stresses that develop during the processing and cross-sectioning of the as-fabricated particle. Characterizing the SiC-OPyC interface of surrogate TRISO particles using nanoindentation provides unique insight into the interface's room-temperature residual stress and mechanical stability. The modeling efforts were used to investigate the experimental procedure further, and the results are presented herein to validate this fuel form's potential mechanical failure modes.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Advanced polymer impregnation and pyrolysis (PIP) of SiOC-based ceramic matrix composites (CMCs)

Silicon carbide (SiC) ceramic matrix composites (CMCs) are valued for their high-temperature properties, making them ideal for harsh environments. However, conventional polymer impregnation and pyrolysis (C-PIP) often result in porous composites and require numerous cycles for densification. This study introduces the advanced PIP (A-PIP) method using a crosslinked polycarbosiloxane (PCS) precursor to enhance densification efficiency. Five SiC CMCs were fabricated using C-PIP and A-PIP, with variations in fiber reinforcement and fiber coatings. A-PIP achieved up to 19 % higher density and 78 % lower porosity in 79–86 % less processing time compared to C-PIP. Moreover, SiC-SiOC composites with boron nitride-coated fibers showed significant improvements in tensile strength (11 MPa to 134 MPa) and strain at maximum strength (0.01–0.11 %), underscoring the role of weak fiber-matrix interfaces. In conclusion, these results demonstrate A-PIP's potential to produce dense, low-porosity SiC CMCs more efficiently, significantly reducing manufacturing time and costs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Multi-scale fission product release model with comparison to AGR data

TRistructural ISOtropic (TRISO) particle fuel is central to several advanced, high-temperature reactor designs. Each particle consists of a fuel kernel encapsulated by three layers of carbon and ceramics that prevent the release of fission products and ensure physical integrity. Despite outstanding retention properties, fission product release has been observed from intact particles. To better understand and quantify fission product release from TRISO particles, a multiscale, mechanistic model of fission product transport is being developed by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program. Previous work focused on silver (Ag) transport and improved Ag release predictions. The work described in this report builds on this experience to better understand cesium (Cs) transport in silicon carbide (SiC), the main barrier to the release of fission products. Atomistic simulations provide bulk and grain boundary (GB) Cs diffusivities in SiC, which are used by phase field simulations in the mesoscale code Marmot to determine the temperature, microstructure, and irradiation-dependent Cs diffusivity at the mesoscale in SiC. This approach attributes the different temperature regimes experimentally observed for Cs diffusivities in SiC to a transition from bulk-dominated diffusivity at high temperatures to a GB-dominated regime at low temperatures, providing new insight. The multiscale, mechanistic effective diffusivity is then implemented in the fuel performance code BISON and further validated by comparing Cs release predictions from Advanced Gas Reactor (AGR)-1 and AGR-2 post-irradiation measurements. The new model improves BISON’s predictability. This document also reports improvements made on Ag transport modeling by accounting for different GB types having different diffusivities. Moreover, this report details preliminary efforts to model palladium (Pd) attack of the SiC at the mesoscale using a phase field approach. Pd attack and its impact on accelerated Ag transport remains a misunderstood phenomenon, and we use the model to demonstrate that the formation of lamellae that has been observed in experiments can be explained by the reaction of Pd with SiC to form alternating layers of graphite and Pd 2 Si. This effort aims to improve our understanding of the reaction and eventually provide a model for BISON to account for Pd penetration and its effects on fission product release.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2023

Comparison of unirradiated and irradiated AGR-2 TRISO fuel particle oxidation response

The silicon carbide (SiC) coating in a tristructural isotropic (TRISO) particle acts as a barrier to fission product release during reactor operation and accident scenarios. Oxidation and subsequent failure of the SiC layer during a rare air ingress event is a proposed mechanism for fission product release in a high-temperature gas-cooled reactor (HTGR). Although previous oxidation studies have analyzed unirradiated TRISO particle response, this study compared the oxidation behavior of irradiated and unirradiated TRISO particles from the second Advanced Gas Reactor Fuel Development and Qualification Program irradiation experiment (AGR-2). Particles with exposed SiC were subjected to six varying oxidizing tests in the Furnace for Irradiated TRISO Testing (FITT), examined for failure fraction with the Irradiated Microsphere Gamma Analyzer (IMGA) and characterized with focused ion beam and scanning/transmission electron microscopy techniques to analyze the oxide layer. Uncorrelated unirradiated particle failures throughout the series of exposures suggests that external factors inherent to the experiment increased particle failure sensitivity. However, irradiated particle observations indicated an increased failure response at 400 h 1400 °C in both 2% and 21% O 2 atmospheres above failure associated with external factors. Oxide thickness measurements after 400 h at 1400 °C revealed a greater oxidation rate than predicted by parabolic growth, which was attributed to the increased complexity of the oxide structure at longer exposure times. Altering the atmosphere from 21% to 2% O 2 reduced the average oxide thickness by approximately 12%–14% in both irradiated and unirradiated particles at 400 h 1400 °C. Altogether, the minor variations observed between irradiated and unirradiated particles in this study led to the conclusion that unirradiated TRISO particles can be used to approximate irradiated TRISO oxidation kinetics.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Wide Bandgap Generation (WBGen): Developing the Future Wide Bandgap Power Electronics Engineering Workforce

This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.

14 SOLAR ENERGY↗