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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Silicon carbide filaments - Microstructure

The microstructure of chemically vapor deposited silicon carbide filaments has been examined using transmission electron microscopy. The filament bulk consisted of heavily faulted columnar subgrains of beta-SiC which were preferentially oriented such that 1 1 1 planes were parallel to the surface of the carbon fiber substrate. The protective coating on the filament surface was characterized by several microstructurally distinct layers, all of which consisted primarily of carbon. The first layers of the coating contained small crystallites of SiC in addition to turbostratic carbon, while the outer layers showed no evidence of SiC. Implications of the filament microstructure with respect to mechanical properties are discussed.

Nutt, S. R.↗
NASA NTRS1998

Far Ultraviolet and Visible Light Scatter Measurements for CVD Silicon Carbide Mirrors for SOHO

Chemically-vapor-deposited (CVD) silicon carbide (SiC) has become a popular mirror material for spaceborne solar instrumentation for the vacuum ultraviolet wavelength range due to its appreciable broadband reflectance and favorable thermal and opto-mechanical properties. Scatter from surfaces of mirrors operating in this wavelength range can destroy otherwise good image contrast especially for extended targets such as the sun. While visible light scatter measurements are relatively easy to conduct, far ultraviolet (FUV) scatter measurements are not so easy. Visible light (633 nm) scatter measurements were performed on CVD SiC telescope mirrors (from the same vendor) for two instruments on the Solar and Heliospheric Observatory (SOHO) -- Ultraviolet Coronagraph Spectrometer (UVCS) and Solar Ultraviolet Measurement of Emitted Radiation (SUMER). Additionally, extensive FUV scatter measurements were made for SUMER telescope mirrors. We attempt to correlate the results for those visible light scatter measurements and to explore the usefulness of visible scatter measurements to predictions of FUV scatter for this important material.

Leviton, Douglas B.↗
NASA NTRS2007

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Hunter, G. W.↗
DOE OSTI2022

Understanding the effect of irradiation and silicon carbide microstructure on silver diffusion in TRISO particles

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) fuel particles serves as a barrier to prevent the escape of fission from the fuel kernel. The release of silver (Ag) is a concern due to the long half-life of the 110mAg isotope. In this study, a combination of atomistic and phase-field methods focuses on quantifying the effect of irradiation and SiC microstructure on Ag diffusion. Atomistic calculations provide the Ag diffusivity in SiC bulk and GBs, also providing an estimate of the effect of irradiation defects on Ag diffusivity in bulk SiC. These lower length scale efforts are leveraged to develop a mesoscale effective Ag diffusion coefficient (Deff) in SiC. Deff is defined as a function of temperature, microstructure variables, and fluence. Deff is implemented in the fuel performance code Bison to predict Ag release from AGR-1 and AGR-2 TRISO fuel particles. We hereby quantify the impact of SiC grain size and irradiation on Ag release and improve Bison's predictions.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Engineered Silicon Carbide Three-Dimensional Frameworks through DNA-Prescribed Assembly

The ability to create nanoengineered silicon carbide (SiC) architectures is important for the diversity of optical, electronic, and mechanical applications. Here, we report a fabrication of periodic three-dimensional (3D) SiC nanoscale architectures using a self-assembled and designed 3D DNA-based framework. The assembly is followed by the templating into silica and subsequent conversion into SiC using a lower temperature pathway (<700 °C) via magnesium reduction. The formed SiC framework lattice has a unit size of about 50 nm and domains over 5 μm, and it preserves the integrity of the original 3D DNA lattice. The spectroscopic and electron microscopy characterizations reveal SiC crystalline morphology of 3D nanoarchitectured lattices, whereas electrical probing shows 2 orders of magnitude enhancements of electrical conductivity over the precursor silica framework. The reported approach offers a versatile methodology toward creating highly structured and spatially prescribed SiC nanoarchitectures through the DNA-programmable assembly and the combination of templating processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1992

Observations on infiltration of silicon carbide compacts with an aluminium alloy

The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

Asthana, R.↗
DOE OSTI2023

Atomistic simulation of brittle-to-ductile transition in silicon carbide embedded with nano-sized helium bubbles

In this study, the tensile response of cubic silicon carbide (SiC) bulk containing cavities (voids and He bubbles) has been investigated using molecular dynamic simulations. The formation of cavities in SiC leads to a significant degradation in the mechanical properties of SiC with more influence on material fracture than initial elastic deformation. The brittle-to-ductile transition occurs in cavity-embedded SiC as the pressure in He bubbles increases. This is associated with the deformation mechanism that bond breaking at a low He bubble pressure transfers to extensive dislocation activities at a higher He bubble pressure. The cavities can effectively concentrate stress around them in the direction perpendicular to the tension, which leads to preferred cracking in the region with a higher tensile stress. The failure mechanism as revealed by this study improves understanding of property degradation in SiC that may be useful for applications of SiC in advanced nuclear energy systems.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1995

Power MOSFETs Formed In Silicon Carbide

High-performance power metal/oxide/semiconductor field-effect transistors (MOSFETs) fabricated in silicon carbide. Devices offer potential advantages over silicon-based MOSFETs, including lower "on" - state resistances at same rated voltages, ability to operate at higher temperatures, and higher thermal conductivity. Also more resistant to damage by ionizing radiation, an advantage for switching appications in nuclear facilities.

Palmour, John W.↗
NASA NTRS2020

Hierarchical Coupling of Molecular Dynamics and Micromechanics to Predict the Elastic Properties of Three-Phase and Four-Phase Silicon Carbide Composites

The results obtained from previously conducted molecular dynamics analysis of silicon carbide (-SiC (6H, 4H, & 2H-SiC), -SiC (3C SiC)), silicon and boron nitride, were utilized as inputs in the MAC/GMC micromechanics software to model and evaluate the elastic properties of three-phase SiC/BN/SiC and four-phase SiC/BN/Si/SiC composites. This method of analysis eliminates the need for back-calculation of the apparent properties of the base constituents from the measured ceramic matrix composites properties. The multiscale models are validated against the available data in literature.

Aluko, Olanrewaju↗
DOE OSTI2022

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗
DOE OSTI2023

Qualification of Commercially Available Silicon Carbide for Passive Thermometry in Reactor Experiments – FY23 Status Report

Silicon carbide (SiC) is often used as a passive temperature indicator for uninstrumented in-core nuclear experiments. For the past several decades, Oak Ridge National Laboratory has relied primarily on SiC thermometry manufactured by Dow Chemical Company, formerly Rohm and Haas because of the material’s high density and reduced grain boundary elements. Although Dow SiC has performed well in this application, this material is no longer commercially available, and a new supplier is needed for future experiments. To determine a suitable replacement, a study was initiated on five types of SiC from four commercial vendors. Several critical properties, including density, electrical resistivity, chemical purity, grain structure, crystal structure, and strength were measured in samples from each material. Additionally, thermometry specimens were manufactured for irradiation in the High Flux Isotope Reactor at nominal temperatures of 300°C, 600°C, and 900°C, which will be measured using continuous dilatometry at a later date. This report provides an update of commercially available SiC material characterization and the irradiation capsule design.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1978

Determination of micro amounts of iron, aluminum, and alkaline earth metals in silicon carbide

A colorimetric method for analysis of micro components in silicon carbide used as the raw material for varistors is described. The microcomponents analyzed included iron soluble in hydrochloric acid, iron, aluminum, calcium and magnesium. Samples were analyzed by the method, and the results for iron and aluminum agreed well with the N.B.S. standard values and the values obtained by the other company. The method can therefore be applied to the analysis of actual samples.

Hirata, H.↗
NASA NTRS1978

Low blow Charpy impact of silicon carbides

The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

Abe, H.↗
NASA NTRS1981

Modification of silicon carbide fibers for use in SiC/Ti composites

The degradation of silicon carbide fibers during exposure to conditions typical of composite fabrication was investigated. The tensile strength of pristine fibers and fibers sputtered with thin metal coatings were determined before and after treatment at 870 C for one hour in vacuum. Each fiber strength distribution was related by an analytical procedure to a projected composite ultimate tensile strength (PC UTS). The results indicate that a thin aluminum diffusion barrier can yield a 150 percent increase in PC UTS over the baseline SiC/Ti system.

Landis, H. S.↗
NASA NTRS1998

Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

Juhasz, Albert J.↗
NASA NTRS2012

Composition Comprising Silicon Carbide

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Mehregany, Mehran↗
DOE OSTI2020

Binder jetting additive manufacturing of silicon carbide ceramics: Development of bimodal powder feedstocks by modeling and experimental methods

A limitation of binder jetting additive manufacturing is the low density of fabricated parts. Mixing powders with different sizes is a promising approach to increase powder bed packing density and, hence, printed part density. However, in previous studies mixed powder feedstock was prepared by trial and error method. In this research, both modeling and experimental methods were used to prepare the bimodal powder feedstocks. Analytical packing model was introduced for irregular powders. A bimodal powder was prepared by mixing two different-sized silicon carbide powders (i.e. coarse and fine) using ball mill, and their tap densities were measured. Silicon carbide plates were printed using the coarse and bimodal powders by a commercial binder jetting system. Results showed that the modeling method could predict the tap density of bimodal powders with high accuracy. The printed parts from bimodal powder achieved higher green densities than those from the unimodal powder.

36 MATERIALS SCIENCE↗