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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗
NASA NTRS1975

Interface effects in the dissolution of silicon into thin gold films

The dissolution of crystalline Si and amorphous Si substrates into thin films of evaporated Au was studied with an electron microprobe and scanning electron microscopy. The dissolution pattern was found to be nonuniform along the plane of the surface and dependent on the crystalline orientation of the Si substrate. The dissolution is greatly facilitated when a very thin layer of Pd is evaporated between the Si substrate and the Au film.

Sankur, H.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗
NASA NTRS1999

Growth and Characterization of Bulk GeSi Solid Solutions

In this work we have grown and characterized several GeSi samples in order to investigate the effects that Silicon concentration, applied magnetic field, and liquid encapsulation have on crystalline quality. Characterization techniques include NDIC microscopy and microprobe spectroscopy. Two samples were grown with a Silicon concentration of approximately 3% and are compared to previous growths having a Silicon fraction of approximately 5%. Growth conditions for one of these samples was varied with the presence of an external applied magnetic field to investigate the possibility of magnetic field damping. A comparison between these two ingots, and with previously grown material, revealed no clear improvement in sample crystalline quality. Three additional samples were grown using a CaCl2 liquid encapsulation technique that produced GeSi material with improved structural quality over previous samples. Comparisons to prior non-encapsulation grown material, details of our methodology, and suggestions for further improvements are discussed.

Ritter, Timothy M.↗
DOE OSTI2025

Scintillation light detection in polycrystalline diamond using single photon detectors

Here, this study investigates the scintillation properties of polycrystalline diamond for particle detection applications, particularly in neutron and alpha radiation environments. Polycrystalline diamonds provide a cost-effective alternative to monocrystalline diamonds while retaining essential detection properties. Photoluminescence measurements were performed to analyze emission spectra, revealing distinct characteristics based on impurity content and crystallinity. Scintillation responses were assessed using Silicon Photomultipliers (SiPMs), demonstrating the capability of polycrystalline diamond powders to respond to alpha irradiation, albeit with reduced resolution compared to traditional scintillators. A prototype neutron detector was developed by combining diamond powder with neutron-sensitive 6 LiF, and its performance was evaluated through experimental testing and Geant4 simulations. The findings indicate that polycrystalline diamond-based detectors can achieve significant detection efficiency while remaining insensitive to gamma radiation, offering potential for portable neutron detection applications.

47 OTHER INSTRUMENTATION↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS2019

Molecular Dynamics Simulations of Silicon Carbide, Boron Nitride and Silicon for Ceramic Matrix Composite Applications

A comprehensive computational molecular dynamics study is presented for crystalline α-SiC (6H, 4H, and 2H SiC), β-SiC (3C SiC), layered boron nitride, amorphous boron nitride and silicon, the constituent materials for high-temperature SiC/SiC compositions. Large-scale Atomic/Molecular Parallel Simulator software package was used. The Tersoff Potential force field was utilized to evaluate their mechanical characteristics of most of the materials, and the Reax force field was used to model silicon when the Tersoff Potential did not provide accurate results. Their mechanical behaviors were evaluated at a strain rate of 10(exp 7)/s and the results agree with the experimental data in the literature. The results are foundational for linking constituent behavior to composite performance, particularly when test data is unavailable or suspect.

Aluko, Olanrewaju↗
DOE OSTI2025

Evaluating genetic and environmental controls on silicon accumulation in Populus trichocarpa leaves

Background and aims: Silicon (Si) accumulation and formation of non-crystalline silica particles (phytoliths) inside plant cells contribute to plant function, soil carbon storage, and Si reservoirs in soils. A better understanding of how genetic and environmental factors control Si accumulation may improve understanding of Si cycling between plants and soil and its impacts on other ecosystem processes. Methods: This study examined how genetic potential for Si uptake and silicification translated to Si concentrations and phytolith formation in Populus trichocarpa leaves. Leaves were collected from four different genotypes of cultivated poplar trees that were grown in a common garden and possess established differences in leaf-level gene expression related to Si transport and silicification. Scanning electron microscopy and subsequent image analysis were used to quantify Si concentrations and phytolith abundance and features. Results: Phytoliths were identified in nearly all leaves but were often absent at very low (< 0.5 wt.%) Si concentrations at the leaf surface. The proportion of leaf area occupied by phytoliths increased as Si content increased. Silicon content and phytolith abundance at the leaf surface did not vary across genotypes, but surface Si was weakly correlated with plant available Si in soil. Conclusion: Phytoliths were prevalent in P. trichocarpa leaves; however, the genetic potential for Si uptake and silicification at the leaf-level poorly predicted foliar Si and phytolith abundance. Uniformly low expression of Si uptake genes in the roots may have reduced differences across genotypes. Consequently, Si accumulation in leaves was likely more strongly influenced by soil Si bioavailability, phenology, or additional environmental factors.

Image analysis↗
NASA NTRS1993

High-pressure infrared sepctra of alpha-quartz, coesite, stishovite and silica glass

High-pressure infrared absorption spectra of alpha-quatz, coesite, stishovite, and SiO2 glass are consistent with the primary compression mechanism of the initially tetrahedrally bonded phases being the bending of the Si-O-Si angle at pressures less than 10-20 GPa. At higher pressures, up to 40 GPa, we observe a decline in the intensity of the infrared SiO4 asymmetric-stretching vibrations of all three phases, with an increase in the relative amplitude between 700 and 900/cm. This change in intensities is attributed to an increase in the average coordination number of silicon through extreme distortion of tetrahedra. At pressures above approximately 20 GPa, the low-pressure crystalline polymorphs gradually become amorphous, and the infrared spectra provide evidence for an increase in silicon coordination in these high-density amorphous phases. The pressure-amorphized samples prepared from quartz and coesite differ structurally both from each other and from silica glass that has been compressed, and the high pressure spectra indicate that these materials are considerably more disordered than stishovite under comparable pressure conditions. Average mode Grueneisen parameters calculated for quartz, stishovite and fused silica from both infrared and Raman spectra are compatible with the corresponding thermodynamic value of the Grueneisen parameter, however, that of coesite is significantly discrepant.

Williams, Q.↗
NASA NTRS1991

Crystallization of the glassy grain boundary phase in silicon nitride ceramics

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

Drummond, Charles H., III↗
NASA NTRS1985

Amorphous-silicon cell reliability testing

The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.

Lathrop, J. W.↗
NASA NTRS2003

CO2 Acquisition Membrane (CAM)

The objective of CAM is to develop, test, and analyze thin film membrane materials for separation and purification of carbon dioxide (CO2) from mixtures of gases, such as those found in the Martian atmosphere. The membranes are targeted toward In Situ Resource Utilization (ISRU) applications that will operate in extraterrestrial environments and support future unmanned and human space missions. A primary application is the Sabatier Electrolysis process that uses Mars atmosphere CO2 as raw material for producing water, oxygen, and methane for rocket fuel and habitat support. Other applications include use as an inlet filter to collect and concentrate Mars atmospheric argon and nitrogen gases for habitat pressurization, and to remove CO2 from breathing gases in Closed Environment Life Support Systems (CELSS). CAM membrane materials include crystalline faujasite (FAU) zeolite and rubbery polymers such as silicone rubber (PDMS) that have been shown in the literature and via molecular simulation to favor adsorption and permeation of CO2 over nitrogen and argon. Pure gas permeation tests using commercial PDMS membranes have shown that both CO2 permeance and the separation factor relative to other gases increase as the temperature decreases, and low (Delta)P(Sub CO2) favors higher separation factors. The ideal CO2/N2 separation factor increases from 7.5 to 17.5 as temperature decreases from 22 C to -30 C. For gas mixtures containing CO2, N2, and Ar, plasticization decreased the separation factors from 4.5 to 6 over the same temperature range. We currently synthesize and test our own Na(+) FAU zeolite membranes using standard formulations and secondary growth methods on porous alumina. Preliminary tests with a Na(+) FAU membrane at 22 C show a He/SF6 ideal separation factor of 62, exceeding the Knudsen diffusion selectivity by an order of magnitude. This shows that the membrane is relatively free from large defects and associated non-selective (viscous flow) transport mechanisms. The Membrane Test Facility (MTF) has been developed to measure membrane permeance over a wide range of temperature and pressure. The facility uses two volume compartments separated by the membrane that are instrumented to measure temperature, delta pressure across the membrane, and gas composition. A thermal shroud supports and encloses the membrane, and provides temperature control. Methods were developed to determine membrane permeance using the first order decay of the pressure difference between the sealed compartments, using the total pressure for pure gases, and partial pressure of each species in gas mixtures. The technique provides an end-to-end measurement of gas permeance that includes concentration polarization effects. Experiments have shown that in addition to membrane permeance properties, the geometry and design of associated structures play an important role in how membrane systems will function on Mars.

Mason, Larry W.↗
DOE OSTI2020

Task 12 PV Sustainability - Life Cycle Inventories and Life Cycle Assessments of Photovoltaic Systems

Life Cycle Assessment (LCA) is a structured, comprehensive method of quantifying material- and energy-flows and their associated impacts in the life cycles of products (i.e., goods and services). One of the major goals of IEA PVPS Task 12 is to provide guidance on assuring consistency, balance, transparency and quality of LCA to enhance the credibility and reliability of the results. The current report presents the latest consensus life cycle inventories among the authors, PV LCA experts in North America, Europe, Asia and Australia. At this time consensus is limited to four technologies for which there are well-established and up-to-date life cycle inventory (LCI) data (mono- and multi-crystalline Si, CdTe, CIGS, as well as one emerging technology (perovskite silicon tandem). LCIs are necessary for LCA and the availability of such data is often the greatest barrier for conducting LCA. The Task 12 LCA experts have put great efforts in gathering and compiling the LCI data presented in this report. These include detailed inputs and outputs during manufacturing of cell, wafer, module, and balance-of-system (i.e., structural and electrical components) that were estimated from actual production and operation facilities. In addition, data are presented to enable analyses of various types of PV installations; these include operational data of rooftop and ground-mount PV systems and country-specific PV-mixes. The LCI datasets presented in this report are the latest that are available to the public describing the status in 2018 for crystalline Si (some manufacturing data from 2011 were not updated), 2015 and 2017-2018 for CdTe, 2010 for CIGS, 2010 for HCPV, and 2017 for perovskite silicon tandem technology.

14 SOLAR ENERGY↗
DOE OSTI2020

Effects of deposition and annealing conditions on the crystallisation of NiTi thin films by e-beam evaporation

This Letter demonstrates the effects of deposition and annealing conditions on the crystallisation of nickel–titanium (NiTi) thin films deposited by the e-beam evaporation. NiTi thin films of 0.5 μm thick are fabricated on P-type (110) silicon substrates using the e-beam evaporation technique. We find that with the characterisations using the X-ray diffraction method, the results indicate that low e-beam deposition rate and argon employed annealing procedures can be beneficial to the formation of NiTi crystalline structure. Additionally, the as-deposited NiTi thin films without annealing procedures are amorphous, when deposited on the substrates at low temperatures. The differential scanning calorimetry studies show NiTi thin films formed by the e-beam evaporation are Ni-rich. Furthermore, SEM images illustrate that high-precision patterned NiTi thin film microstructures can be fabricated by combining with the e-beam evaporation and lift-off resist methods, without any wet or dry etching procedures. The proposed fabrication process for NiTi thin film microstructures shows great potential for application in shape memory alloy medical devices, as well as the micro-robotics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲1 μm) thermal conductivity of silicon wafers irradiated with Kr + ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50x reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

Schmid, F.↗
NASA NTRS1990

Status and applications of diamond and diamond-like materials: An emerging technology

Recent discoveries that make possible the growth of crystalline diamond by chemical vapor deposition offer the potential for a wide variety of new applications. This report takes a broad look at the state of the technology following from these discoveries in relation to other allied materials, such as high-pressure diamond and cubic boron nitride. Most of the potential defense, space, and commercial applications are related to diamond's hardness, but some utilize other aspects such as optical or electronic properties. The growth processes are reviewed, and techniques for characterizing the resulting materials' properties are discussed. Crystalline diamond is emphasized, but other diamond-like materials (silicon carbide, amorphous carbon containing hydrogen) are also examined. Scientific, technical, and economic problem areas that could impede the rapid exploitation of these materials are identified. Recommendations are presented covering broad areas of research and development.

Source record↗
DOE OSTI2021

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO 2 :Y

HfO 2 , a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc2 1 ) form in ultrathin films regarded as the plausible cause of ferroelectricity but thought not to be attainable in bulk crystals. In this work, using a state-of-the-art laser-diode-heated floating zone technique, we report the Pbc2 1 phase and ferroelectricity in bulk single-crystalline HfO 2 :Y as well as the presence of the antipolar Pbca phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti)polar crystallographic signatures and abundant 90°/180° ferroelectric domains in addition to switchable polarization with negligible wake-up effects. Density-functional-theory calculations indicate that the yttrium doping and rapid cooling are the key factors for stabilization of the desired phase in bulk. Our observations provide insights into the polymorphic nature and phase control of HfO 2 , remove the upper size limit for ferroelectricity and suggest directions towards next-generation ferroelectric devices.

36 MATERIALS SCIENCE↗