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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
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NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
NASA NTRS1986

Analysis of silicon stress/strain relationships

Results are presented for work on stress-strain relationships in silicon ribbon. Calculations of stress fields, dislocation desities, and buckling were made; uniaxial tensile tests were made on silicon at 1150 C; and dislocation motion studies were performed.

Dillon, O.↗
NASA NTRS1987

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Miyoshi, Kazuhisa↗
NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Source record↗
NASA NTRS1987

Effect of hydrogen on deformation structure and properties of CMSX-2 nickel-base single-crystal superalloy

Material used in this study was a heat of the alloy CMSX-2. This nickel-based superalloy was provided in the form of oriented single crystals, solutionized for 3 hrs at 1315 C. It was then usually heat treated as follows: 1050 C/16h/air cool + 850 C/48h/air cool. The resulting microstructure is dominated by cuboidal, ordered gamma precipitates with a volume fraction of about 75% and an average size of 0.5 microns. In brief, the most compelling hydrogen induced-changes in deformation structure are: (1) enhanced dislocation accumulation in the gamma matrix; and (2) more extensive cross-slip of superdislocations in the gamma precipitates. The enhanced dislocation density in gamma acts to decrease the mean free path of a superdislocation, while easier cross slip hinders superdislocation movement by providing pinning points in the form of sessile jobs. Both processes contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture.

Dollar, M.↗
NASA NTRS1985

Structural defect characterization of silicon dendritic web ribbons

An EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.

Cheng, L. J.↗
NASA NTRS1986

Crack growth in single-crystal silicon

Crack growth in single-crystal silicon at room temperature in air was evaluated by double torsion (DT) load-relaxation method and monitored by acoustic emission (AE) technique. Both DT and AE methods indicated lack of subcritical crack growth in silicon. At the critical stress intensity factor, the crack front was found to be jumping several times in a 'mirror' region and then followed by fast crack growth in a 'hackle' region. Hackle marks were found to be associated with plastic deformation at the tip of the fast moving crack. No dislocation etch pits were found in the 'mirror' region, in which crack growth may result from interatomic bonds broken at the crack tip under stress without any plastic deformation. Acoustic emission appears to be spontaneously generated from both interatomic bonds broken and dislocation generation at the moving crack tip during the crack growth in single-crystal silicon.

Chen, C. P.↗
NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗
NASA NTRS1988

Processing, physical metallurgy and creep of NiAl + Ta and NiAl + Nb alloys

Powder processed NiAl + Ta alloys containing 1, 2, and 4.5 at percent tantalum and NiAl + Nb alloys containing 1 and 2 at percent niobium were developed for improved creep properties. In addition, a cast alloy with 5 at percent tantalum was also studied. Hot extrusion parameters for processing alloys with 1 and 2 at percent of tantalum or niobium were designed. The NiAl + 4.5 at percent Ta alloy could be vacuum hot pressed successfully, even though it could not be extruded. All the phases in the multiphase alloys were identified and the phase transformations studied. The Ni2AlTa in NiAl + 4.5 at percent Ta alloy transforms into a liquid phase above 1700 K. Solutionizing and annealing below this temperature gives rise to a uniform distribution of fine second phase precipitates. Compressive creep properties were evaluated at 1300 K using constant load and constant velocity tests. In the higher strain rate region single phase NiAl + 1 at percent Ta and NiAl + 1 at percent Nb alloys exhibit a stress exponent of 5 characteristic of climb controlled dislocation creep. In slower strain rate regime diffusional creep becomes important. The two phase alloys containing 2 to 5 at percent Ta and 2 at percent Nb show considerable improvement over binary NiAl and single phase alloys. Loose dislocation networks and tangles stabilized by the precipitates were found in the as crept microstructure. The cast alloy which has larger grains and a distribution of fine precipitates shows the maximum improvement over binary NiAl.

Pathare, Viren M.↗
NASA NTRS1988

Resolved shear stress intensity coefficient and fatigue crack growth in large crystals

Fatigue crack growth in large grain Al alloy was studied. Fatigue crack growth is caused primarily by shear decohesion due to dislocation motion in the crack tip region. The crack paths in the large crystals are very irregular and zigzag. The crack planes are often inclined to the loading axis both in the inplane direction and the thickness direction. The stress intensity factors of such inclined cracks are approximated from the two dimensional finite element calculations. The plastic deformation in a large crystal is highly anisotropic, and dislocation motion in such crystals are driven by the resolved shear stress. The resolved shear stress intensity coefficient in a crack solid, RSSIC, is defined, and the coefficients for the slip systems at a crack tip are evaluated from the calculated stress intensity factors. The orientations of the crack planes are closely related to the slip planes with the high RSSIC values. If a single slip system has a much higher RSSIC than all the others, the crack will follow the slip plane, and the slip plane becomes the crack plane. If two or more slip systems have a high RSSIC, the crack plane is the result of the decohesion processes on these active slip planes.

Chen, QI↗
NASA NTRS1987

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗
NASA NTRS1987

The microstructure and tensile properties of extruded melt-spun ribbons of iron-rich B2 FeAl

The microstructure of extruded rods of iron-rich FeAl(B2-structure), as characterized by TEM, SEM, optical microscopy and x-ray diffractometry, consisted of elongated grains with a 111-line fibre texture containing a high dislocation density. Numerous oxide particles were found, mostly in lines which reflected the matrix flow during extrusion. In addition, some large inclusions were present. Tensile testing of annealed, relatively dislocation-free specimens as a function of increasing temperature found increasing ductility up to 900K, above which a ductility drop occurred accompanied by a change in fracture mode, from transgranular cleavage to intergranular fracture. The yield strength, which was independent of temperature up to 800K (at about 500MPa), also decreased rapidly as diffusion became more important. The predominant slip vector changed from 111-line to 100-line around 700K.

Baker, I.↗
NASA NTRS1988

The effect of hydrogen on deformation substructure, flow and fracture in a nickel-base single crystal superalloy

The room temperature flow and fracture of a nickel-base single crystal gamma/gamma-/prime superalloy in the presence and absence of hydrogen is explored. The procedure of hydrogen-charging employed in this study provides a very high and uniform hydrogen concentration of the order of 5000 at.-ppm in the material. It is shown that the most compelling hydrogen-induced changes in deformation behavior are enhanced dislocation accumulation in the gamma matrix and extensive cross-slip of super-dislocations. The explanation of these changes is proposed. Both effects contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture. Hydrogen enhanced strain localization in the gamma matrix leads to the dramatic loss of ductility and premature cracking, which manifests as failure macroscopically parallel to the 100-plane-oriented faces of gamma-prime precipitates. On the microscale, cracking, while limited to the gamma matrix, occurs parallel to multiple 111-plane-oriented slip systems.

Dollar, M.↗
NASA NTRS1988

Static and dynamic properties of incommensurate smectic-A(IC) liquid crystals

The elasticity, topological defects, and hydrodynamics of the incommensurate smectic A(IC) phase liquid crystals are studied. The phase is characterized by two colinear mass density waves of incommensurate spatial frequency. The elastic free energy is formulated in terms of a displacement field and a phason field. It is found that the topological defects of the system are dislocations with a nonzero phason field and phason field components. A two-dimensional Burgers lattice for these dislocations is introduced. It is shown that the hydrodynamic modes of the phase include first- and second-sound modes whose direction-dependent velocities are identical to those in ordinary smectics.

Lubensky, T. C.↗
NASA NTRS1988

Microstructural evolution on crystallizing the glassy phase in a 6 weight percent Y2O3-Si3N4 ceramic

X-ray diffraction and analytical electron microscopy have been used to study the crystallization of the grain-boundary glass in a 6 wt pct Y2O3-Si3N4 ceramic. Upon crystallization, high densities of dislocations formed in the Si3N4 grains and remained after 5 h at temperature. However, prolonged holds at the crystallization temperature effectively annealed out the dislocations. Other features present in the microstructure are characterized.

Lee, W. E.↗
NASA NTRS1988

Anharmonic and screening corrections to the melting of a two-dimensional charged colloidal crystal

The Kosterlitz-Thouless-Halperin-Nelson-Young theory of melting is applied to a two-dimensional charged colloidal crystal. The renormalization of elastic constants due to anharmonic and dislocation pair-screening effects is calculated. For colloidal spheres ('polyballs') suspended in a thin film of water confined between two glass plates whose surfaces are highly charged, as in recent experimental configurations, the corrections to the harmonic results simply require an altered effective polyball charge to reproduce virtually the identical melting curve of the harmonic approximation (which agrees well with experiment). The effect on the melting curve of added salt is also calculated; the corresponding experiments have yet to be performed. For a film between uncharged surfaces the anharmonic correction again softens the lattice significantly. Dislocation pair screening causes an additional but minor reduction of the elastic constants. Neither correction eliminates a nonmelting behavior characteristic of the two-dimensional screened Coulomb system in this configuration.

Chang, Enson↗
NASA NTRS1988

The effect of temperature on the deformation structure of single crystal nickel based superalloys

Results for the temperature dependence of the yield and flow stress were obtained for the superalloys PWA 1480 and CMSX-2. An extended Copley-Kear (1967) model is used to predict flow stresses from the dislocation densities measured at different strains and temperatures. Differences found between the two superalloys include the development of their dislocation structure, their ductility, and their work hardening characteristics.

Dollar, M.↗
NASA NTRS1989

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Miyoshi, Kazuhisa↗