Effect of interorbital scattering on superconductivity in doped Dirac semimetals
Not Available
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Not Available
Correlated oxides can exhibit complex magnetic patterns. Understanding how magnetic domains form in the presence of disorder and their robustness to temperature variations has been of particular interest, but atomic scale insight has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator perovskite iridate Sr 3 Ir 2 O 7 as a function of chemical composition and temperature. We find that replacing only several percent of lanthanum for strontium leaves behind nanometer-scale AF puddles clustering away from lanthanum substitutions preferentially located in the middle strontium oxide layer. Thermal erasure and reentry into the low-temperature ground state leads to a spatial reorganization of the AF puddles, which nevertheless maintain scale-invariant fractal geometry in each configuration. Our experiments reveal multiple stable AF configurations at low temperature and shed light onto spatial fluctuations of the AF order around atomic scale disorder in electron-doped Sr 3 Ir 2 O 7 .
Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. Here, in this study, we developed a vapor-based AsCl 3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl 3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl 3 . This approach has led to a long carrier lifetime of over 72 ns, V oc of 850 mV, and power conversion efficiency of ~18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.
The recent observation of superconductivity in N d 0.8 S r 0.2 N i O 2 has raised fundamental questions about the hierarchy of the underlying electronic structure. Calculations suggest that this system falls in the Mott–Hubbard regime, rather than the charge-transfer configuration of other nickel oxides and the superconducting cuprates. Here, we use state-of-the-art, locally resolved electron energy-loss spectroscopy to directly probe the Mott–Hubbard character of N d 1 − x S r x N i O 2 . Upon doping, we observe emergent hybridization reminiscent of the Zhang–Rice singlet via the oxygen-projected states, modification of the Nd 5d states, and the systematic evolution of Ni 3d hybridization and filling. These experimental data provide direct evidence for the multiband electronic structure of the superconducting infinite-layer nickelates, particularly via the effects of hole doping on not only the oxygen but also nickel and rare-earth bands.
The kagome-lattice compounds RMn 6 Sn 6 (R is a rare-earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn 6 Sn 6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c axis. Previous neutron studies carried out on polycrystalline samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here, in this study, we present magnetic and magnetotransport measurements on a single crystal and first-principles calculations in the doping series of TmMn 6 Sn 6-x Ga x . We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field.
In the standard configurations of metal halide perovskite solar cell, the active layer, or absorber, follows a p-i-n or n-i-p electronic structure that is designed to enhance the separation and extraction of photo-induced charge carriers. The control of the Fermi level position across the film, between electron and hole transport layers, is therefore of paramount importance. Direct localized doping in metal halide perovskites being still elusive, the design of n-i-p and p-i-n structures has so far relied predominantly on surface and interface doping of the perovskite as well as on the control of the work function of the substrate and transport layers on which, or between which, the absorber is being placed. We provide here a short review of that work, emphasizing the fundamental studies of electronic structure performed on systems modified with organic molecular dopants. The review starts with a justification for the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We then review work done on the deposition of molecular oxidants and reductants on perovskite surfaces, including the mitigation of the surface states, and the impact of these dopants on energy level alignment with substrate and charge transport layers. The second part of the review focuses on the use of molecular dopants to either modify the work function of electron or hole transport layers to establish the boundary conditions for a p-i-n or n-i-p structure, or to enhance the conductivity of these layers in order to facilitate charge carrier extraction. Final considerations are also given on recent work on bulk doping of the perovskite layer with molecular dopants.
One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. Several theoretical proposals aimed to elucidate this phenomenon have been put forth, a notable one being phase separation and an associated percolation-induced Mott insulator-metal transition. In the present work we study the prototypical doped Mott-insulating rare-earth titanate YTiO 3 , in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y 1-x Ca x TiO 3 with 0 ≤ x ≤ 0.5, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+U calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the insulating x = 0 and metallic x ~ 0.5 states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the doping-induced insulator-metal transition in Y 1-x Ca x TiO 3 is indeed percolative in nature, and thus of inherent first-order character.
Time reversal and inversion symmetric materials fail to yield linear and nonlinear responses since they possess net zero Berry curvature. However, higher-order Hall response can be generated in these systems upon constraining the crystalline symmetries. Motivated by the recently discovered third-order Hall (TOH) response mediated by Berry connection polarizability, namely, the variation of the Berry connection with respect to an applied electric field, here, we investigate the existence of such a Hall effect in the surface states of hexagonal warped topological insulators (e.g., Bi 2 Te 3 ) under the application of only electric field. Using the semiclassical Boltzmann formalism, we investigate the effect of tilt and hexagonal warping on the Berry connection polarizability tensor and, consequently, the TOH effect, provided the Dirac cone remains gapless. We find that the magnitude of the response increases significantly with increasing tilt strength and warping, and therefore, they can provide the tunability of this effect. In addition, we also explore the effect of chemical doping on the TOH response in this system. Interestingly, we show, based on the symmetry analysis, that the TOH can be the leading-order response in this system, which can directly be verified in experiments.
Sorption‐enhanced steam reforming and gasification using CO 2 sorbents enable the production of H 2 ‐rich syngas from carbonaceous feedstocks but are limited by significant temperature swings and sintering‐induced activity loss. Perovskite‐structured oxides are presented herein as sintering‐resistant, redox‐activated isothermal CO 2 sorbents capable of overcoming these challenges by releasing lattice oxygen to partially oxidize the carbonaceous feedstock while capturing CO 2 , shifting equilibrium toward H 2 production. Building on this, the structural and thermodynamic impact of Fe doping on the CO 2 sorption properties of SrMn 1‐ x Fe x O 3‐ δ is investigated for sorption‐enhanced reforming. Experimental results demonstrate that these sorbents enable isothermal production of high‐quality, H 2 ‐enriched syngas from carbonaceous feedstocks. Laboratory and synchrotron‐based powder X‐ray diffraction analyses, coupled with density functional theory calculations, reveal the structural dynamics and energy landscape of the SrMn 1‐ x Fe x O 3‐ δ perovskite system under reaction conditions, elucidating the solid‐state reaction pathway and the effect of Fe doping on the extent of carbonation.
Li-S battery (LSB) is promising for achieving high capacity. Still, its development is hindered by the complex redox process with sluggish kinetics and particularly the resulting lithium polysulfides (LiPS) shuttle effects. Single-atom catalysts (SACs), with their maximized atom utilization, could effectively chemisorb soluble LiPSs and expedite the sulfide conversion reaction kinetics. Here we report incorporating Fe single metal atom catalyst (Fe-SAC) in the sulfur cathode design and its electrocatalytic effects. Fe-doped ZIF-8 nanocages were introduced into a cheap biomass bacteria cellulose. A pyrolysis process converted them into an aerogel structure with Fe-SAC-functionalized N-doped carbon nanocages linked by a carbon nanofiber network (FeSA-NC@CBC), which was applied as a scaffold to fabricate freestanding and binder-free sulfur cathodes. He we conducted electrochemical measurements to reveal Fe-SAC functions including lowering energy barriers for S 8 reduction to liquid-phase LiPSs and further to solid-phase Li 2 S 2 /Li 2 S and accelerating Li 2 S 2 /Li 2 S nucleation and deposition, as corroborated by our theoretical calculation results. Benefiting from the synergistic effects of highly active Fe-SAC and three-dimensional conductive network, the sulfide reaction kinetics is improved, which can diminish LiPS shuttle effects and therefore improve LBS rate performance and cycling stability. Accordingly, the fabricated FeSA-NC@CBC composite cathode delivers an excellent rate capability at 2C with a reversible capacity of 840 mAh/g and a long-term cyclic stability of 800 mAh/g at 1C after 500 cycles.
The effect of high-temperature annealing (HTA) treatments and Cd-excess during the in-situ doping of CdSeTe:Sb is investigated. Optimized treatments eliminate the wurtzite phase from the as-deposited CdSeTe layer, while facilitating Se intermixing and grain size enhancement before CdCl2 treatment. The improved device stack quality results in a VOC improvement of 250 mV. VOC is further improved by tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition. The lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell with VOC = 849mV, despite a decreased carrier concentration due to the harsh CdCl2 treatment.
Abstract Molecular doping—the use of redox‐active small molecules as dopants for organic semiconductors—has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox‐active character of these materials. A recent breakthrough was a doping technique based on ion‐exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno(3,2‐b)thiophene) (PBTTT) doped with FeCl 3 and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm −1 and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl 3 , are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.
The future of spintronics and semiconductor applications demands materials with tailored electronic and magnetic properties. Here, this study uses density functional theory to investigate the electronic structure of the half-metallic compound Mn 4 Al 11 under uniaxial strain and in its Ge-substituted derivatives. Strain analysis shows that although the half-metallic band gap collapses under strain beyond −2%, the ferrimagnetic character remains stable. Ge substitution at six inequivalent Al sites in Mn 4 Al 11 results in varying degrees of metallicity and magnetic properties. Substitution at Al═ (000) induces a metal-to-insulator transition with an indirect semiconducting gap of 0.14 eV. Bonding and hybridization analyses reveal that local Mn–Al interactions due to Ge substitution significantly modify the local electronic structure, causing both electronic and magnetic phase transitions. This work highlights the effectiveness of substitutional doping in tuning half-metallicity and magnetic properties in inorganic solids, enabling the design of materials for future technological applications.
The effect of electron doping of EuO 1- δ thin films through oxygen vacancies ( δ = 0, 0.025, and 0.09) upon the magnetocaloric response is presented here. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce tablelike magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.
Interest in ZrTe 5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron–hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Finally, our work helps to resolve the longstanding puzzles on ZrTe 5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.
Sodium-ion batteries (SIBs) are attractive for the low cost and abundance of sodium. Yet, gas evolution—a critical challenge in SIBs—remains underexplored. Here, online electrochemical mass spectrometry is used to probe gas evolution in layered oxide cathodes with various compositions, cutoff voltages, dopants, and particle morphologies. Compared to LiNiO 2 (LNO), NaNiO 2 releases more gas, even at lower states of charge, due to the higher covalency of Ni─O bond caused by the more ionic Na─O bond through the inductive effect. Among Co, Mn, Al, and Mg, Mn and Mg doping suppress gas release most effectively by enhancing the metal-oxygen bond strength. NaNi 1/3 Fe 1/3 Mn 1/3 O 2 (NFM) cathodes synthesized via coprecipitation (CP-NFM) and solid-state routes exhibit distinct particle morphologies; CP-NFM exhibits more gas evolution, yet secondary particle morphology helps reduce it through differential cathode-electrolyte reactivity between inner and outer primary particles. Among Li, Ti, Mg, and Cu doping in NFM, Li has the largest effect, reducing gas levels comparable to LNO. Nuclear magnetic resonance and X-ray photoelectron spectroscopies reveal that electrolyte solvent decomposition mainly produces organic-rich cathode-electrolyte interphase (CEI) rather than soluble species. NaPF 6 salt further exacerbates cathode-electrolyte reactions, forming surface Na 2 O species. The findings provide actionable guidance for designing safer, durable SIBs.
An inexpensive Fe doped aluminoborate consisted of 18% Fe in PKU-1 material that exhibits high selectivity of 4-hydroxymethy-2,2-dimethyl-1,3-dioxolane (Solketal, 98.3%), considerable activity (TOF 51.7 h -1 ), and recyclable ability in the ketalization of glycerol to Solketal with acetone at 318 K has been developed. Here our study demonstrated that the structure of Fe (less agglomerated iron species vs. FeO x clusters) can be tuned by changing Fe loading in the PKU-1 material, which correlated well with experimental observations. Furthermore, the surface boron sites were promoted by iron loading and behaved as Lewis-acid sites to facilitate the reaction process of glycerol ketalization, while the Solketal selectivity was closely related with the structure of iron species in PKU-1, which was proved by kinetic studies, density function theory (DFT) calculations, and a series of spectroscopy studies. This investigation demonstrates that the surface B sites can play important roles in the reaction instead of being spectators.
The effects of Ni doping in Eu(Co 1-x Ni x ) 2-y As 2 single crystals with x = 0 to 1 grown out of self flux are investigated via crystallographic, electronic transport, magnetic, and thermal measurements. All compositions adopt the body-centered-tetragonal ThCr 2 Si 2 structure with space group I 4= mmm . Here, we also find 3-4% of randomly-distributed vacancies on the Co/Ni site. Anisotropic magnetic susceptibility $\chi$α (α = ab; c) data versus temperature T show clear signatures of an antiferromagnetic (AFM) c-axis helix structure associated with the Eu +2 spins-7/2 for x = 0 and x = 1 as previously reported. The $\chi$α (T) data for x = 0.03 and 0.10 suggest an anomalous 2 q magnetic structure containing two helix axes along the c axis and in the ab plane, respectively, whereas for x = 0.75, 0.82, and 1 a c-axis helix is inferred as previously found for x = 1. At intermediate compositions x = 0:2, 0.32, 0.42, 0.54, and 0.65 a magnetic structure with a large ferromagnetic (FM) c-axis component is found from magnetization versus fi eld isotherms, suggested to be an incommensurate FM cone structure associated with the Eu spins, which consists of both AFM and FM components. In addition, the $\chi$ (T) and heat capacity C p (T) data for x = 0.2-0.65 indicate the occurrence of itinerant FM order associated with the Co/Ni atoms with Curie temperatures from 60 K to 25 K, respectively. Electrical resistivity ρ(T) measurements indicate metallic character for all compositions with abrupt increases in slope on cooling below the Eu AFM transition temperatures. In addition to this panoply of magnetic transitions, 151 Eu Mössbauer measurements indicate that ordering of the Eu moments proceeds via an incommensurate sine amplitude-modulated structure with additional transition temperatures associated with this effect.