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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

Micron MT29F1T08CMHBBJ4 1Tb NAND Flash Memory Single Event Effect Characterization Test Report

The purpose of this testing is to characterize the Single-Event Effect (SEE) response of the Micron MT29F1T08CMHBBJ4 3D NAND Flash memory. The MT29F1T08CMHBBJ4 is a 1Tb NAND Flash memory, consisting of a four-die stack of 256Gb MLC dice packaged in a 132-ball VBGA package. All data presented is the result of testing only the top die (256Gb) of the package. Testing was performed at two heavy-ion cyclotron facilities with an identical test setup, over the course of four test trips from 2017-2019.

Single Event Effect (SEE)↗

Satiation or availability? Effects of attention, memory, and imagery on the perception of ambiguous figures

The prolonged-inspection technique has been used to demonstrate effects of satiation on the perception of ambiguous figures. We propose that the inspection phase, in which subjects view an unambiguous version of the stimulus prior to observing the ambiguous figure, does not create neural fatigue but rather provides a context in which the alternative percept is apprehended and gains perceptual strength through processes such as imagination or memory. The consequent availability of the alternative organization drives the perceptual phenomena that have been thought to reflect satiation. In Experiment 1, we demonstrated that (1) preexperimental exposure to the target figures and (2) allocation of attention to the inspection figures were both necessary in order to obtain results similar to those predicted by the satiation model. In Experiment 2, we obtained similar results, finding that effects of prior inspection were greater the greater the amount and availability of information regarding the alternative percept during the inspection phase. Subjects who generated visual images of the noninspected alternative during inspection yielded results comparable to those from subjects to whom both versions were presented visually.

Horlitz, Krista L.↗

Evaluation of Radiation Effects in Flash Memories

Features of flash memories: Flash memories are non-volatile; that is they do not require power to retain the information in its memory. They can be erased and written to while the device is still in the circuit.

Radiation effects↗

Effect of virtual memory on efficient solution of two model problems

Computers with virtual memory architecture allow programs to be written as if they were small enough to be contained in memory. Two types of problems are investigated to show that this luxury can lead to quite an inefficient performance if the programmer does not interact strongly with the characteristics of the operating system when developing the program. The two problems considered are the simultaneous solutions of a large linear system of equations by Gaussian elimination and a model three-dimensional finite-difference problem. The Control Data STAR-100 computer runs are made to demonstrate the inefficiencies of programming the problems in the manner one would naturally do if the problems were indeed, small enough to be contained in memory. Program redesigns are presented which achieve large improvements in performance through changes in the computational procedure and the data base arrangement.

Lambiotte, J. J., Jr.↗

Performance and Portability of a Linear Solver Across Emerging Architectures

A linear solver algorithm used by a large-scale unstructured-grid computational fluid dynamics application is examined for a broad range of familiar and emerging architectures. Efficient implementation of a linear solver is challenging on recent CPUs offering vector architectures. Vector loads and stores are essential to effectively utilize available memory bandwidth on CPUs, and maintaining performance across different CPUs can be difficult in the face of varying vector lengths offered by each. A similar challenge occurs on GPU architectures, where it is essential to have coalesced memory accesses to utilize memory bandwidth effectively. In this work, we demonstrate that restructuring a computation, and possibly data layout, with regard to architecture is essential to achieve optimal performance by establishing a performance benchmark for each target architecture in a low level language such as vector intrinsics or CUDA. In doing so, we demonstrate how a linear solver kernel can be mapped to Intel® Xeon™ and Xeon Phi™, Marvell® ThunderX2®, NEC® SX-Aurora™ TSUBASA Vector Engine, and NVIDIA® and AMD® GPUs. We further demonstrate that the required code restructuring can be achieved in higher level programming environments such as OpenACC, OCCA, and Intel® OneAPI™/SYCL, and that each generally results in optimal performance on the target architecture. Relative performance metrics for all implementations are shown, and subjective ratings for ease of implementation and optimization are suggested.

Programming models↗

Improved Hall-Effect Sensors For Magnetic Memories

High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.

Wu, Jiin-Chuan↗

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗

Design, fabrication, testing and delivery of a feasibility model laminated ferrite memory

The effect of using multiword addressing with laminated ferrite arrays was made. Both a reduction in the number of components, and a reduction in power consumption was obtained for memory capacities between one million bits and one million words. An investigation into the effect of variations in the processing steps resulted in a number of process modifications that improved the quality of the arrays. A feasibility model laminated ferrite memory system was constructed by modifying a commercial plated wire memory system to operate with laminated ferrite arrays. To provide flexibility for the testing of the laminated ferrite memory, an exerciser has been constructed to automatically control the loading and recirculation of arbitrary size checkerboard patterns of one's and zero's and to display the patterns of stored information on a CRT screen.

Heckler, H. C.↗

Prospective memory in dynamic environments: effects of load, delay, and phonological rehearsal

A new paradigm was developed to examine prospective memory performance in a visual-spatial task that resembles some aspects of the work of air traffic controllers. Two experiments examined the role of workload (number of aeroplanes that participants directed), delay (between receipt of prospective instructions and execution), and phonological rehearsal. High workload increased prospective memory errors but increasing delay from 1-3 or 5 minutes had no effect. Shadowing aurally presented text reduced prospective memory performance, presumably because it prevented verbal rehearsal of the prospective instructions. However, performance on the foreground task of directing aeroplanes to routine destinations was affected only by workload and not by opportunity for rehearsal. Our results suggest that ability to maintain performance on a routine foreground task while performing a secondary task--perhaps analogous to conversation--does not predict ability to retrieve a prospective intention to deviate from the routine.

Aerospace Medicine↗

Effect of Plane Strain Compression and Subsequent Recrystallization Annealing on Microstructures and Phase Transformation of NiTiFe Shape Memory Alloy

The effect of plane strain compression and subsequent recrystallization annealing on microstructures and phase transformation of NiTiFe shape memory alloy (SMA) is investigated. Inhomogeneous plastic deformation at various deformation degrees occurs in NiTiFe SMA during plane strain compression. Nanocrystalline phase and amorphous phase increase as the deformation degree increases. B2 austenite, B19′ martensite, nanocrystalline and amorphous phases coexist in the NiTiFe samples subjected to large plastic strain. The static recrystallization mechanisms depend on the microstructures of the deformed NiTiFe samples. The static recrystallization mechanisms deal with nucleation and growth of the recrystallized grains, growth of nanocrystalline phase and crystallization of amorphous phase. Grain size, subgrain boundaries, geometrically necessary dislocation density and Schmid factor are captured on the basis of electron backscattered diffraction data. The process of recrystallization annealing cannot eliminate the deformation texture completely. The slip direction [110] is the most favorable slip direction in the recrystallized NiTiFe sample. Plane strain compression along with subsequent recrystallization annealing changes the phase transformation path of as-rolled NiTiFe SMA, and it results in the decreasing martensite transformation start temperature. The three annealed NiTiFe samples exhibit the similar phase transformation behavior since complete recrystallization annealing leads to the similar microstructures.

36 MATERIALS SCIENCE↗