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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

A Scenario-Based Process for Requirements Development: Application to Mission Operations Systems

The notion of using operational scenarios as part of requirements development during mission formulation (Phases A & B) is widely accepted as good system engineering practice. In the context of developing a Mission Operations System (MOS), there are numerous practical challenges to translating that notion into the cost-effective development of a useful set of requirements. These challenges can include such issues as a lack of Project-level focus on operations issues, insufficient or improper flowdown of requirements, flowdown of immature or poor-quality requirements from Project level, and MOS resource constraints (personnel expertise and/or dollars). System engineering theory must be translated into a practice that provides enough structure and standards to serve as guidance, but that retains sufficient flexibility to be tailored to the needs and constraints of a particular MOS or Project. We describe a detailed, scenario-based process for requirements development. Identifying a set of attributes for high quality requirements, we show how the portions of the process address many of those attributes. We also find that the basic process steps are robust, and can be effective even in challenging Project environments.

MOS↗
DOE OSTI2025

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.

Cricchi, J. R.↗
NASA NTRS1976

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

Bouldin, D. L.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1975

Investigation of field induced trapping on floating gates

The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

Gosney, W. M.↗
NASA NTRS1981

CADAT field-effect-transistor simulator

CADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.

Source record↗
NASA NTRS1993

Toward lowering the cost of mission operations

The mission operations system is one of the more significant drivers of the cost of the mission operations and data analysis segment of missions. In large or long-lived projects, the MOS can also be a driver in total mission cost. Larger numbers of missions, together with an increasingly cost-conscious environment, dictate that future missions must more strictly control costs as they perform to their requirements. It is therefore prudent to examine the conduct of past missions for ways to conserve resources. In this paper we review inputs made to past projects' 'lessons-learned' activities, in which personnel from past projects (among other things) identified major cost drivers of MOS's and considered how economies were or might have been realized in both design and performance of their MOS. Common themes among four such reviews are summarized in an attempt to provide suggestions for cost reduction in future missions.

Wall, S. D.↗
NASA NTRS2014

A Multifaceted Approach to Modernizing NASA's Advanced Multi-Mission Operations System (AMMOS) System Architecture

The Advanced Multi-Mission Operations Systems (AMMOS) is NASA's premier space mission operations product line offering for use in deep-space robotic and astrophysics missions. The general approach to AMMOS modernization over the course of its 29-year history exemplifies a continual, evolutionary approach with periods of sponsor investment peaks and valleys in between. Today, the Multimission Ground Systems and Services (MGSS) office-the program office that manages the AMMOS for NASA-actively pursues modernization initiatives and continues to evolve the AMMOS by incorporating enhanced capabilities and newer technologies into its end-user tool and service offerings. Despite the myriad of modernization investments that have been made over the evolutionary course of the AMMOS, pain points remain. These pain points, based on interviews with numerous flight project mission operations personnel, can be classified principally into two major categories: 1) information-related issues, and 2) process-related issues. By information-related issues, we mean pain points associated with the management and flow of MOS data across the various system interfaces. By process-related issues, we mean pain points associated with the MOS activities performed by mission operators (i.e., humans) and supporting software infrastructure used in support of those activities. In this paper, three foundational concepts-Timeline, Closed Loop Control, and Separation of Concerns-collectively form the basis for expressing a set of core architectural tenets that provides a multifaceted approach to AMMOS system architecture modernization intended to address the information- and process-related issues. Each of these architectural tenets will be further explored in this paper. Ultimately, we envision the application of these core tenets resulting in a unified vision of a future-state architecture for the AMMOS-one that is intended to result in a highly adaptable, highly efficient, and highly cost-effective set of multimission MOS products and services.

Estefan, Jeff A.↗
NASA NTRS2016

A Structured, Model-Based Systems Engineering Methodology for Operations System Design

Two widely accepted techniques for lowering the cost and risk of developing systems are (1) the use of a defined systems engineering (SE) process or methodology and (2) the reuse of existing (previously built) system components. The first technique is represented, for example, in materials published by NASA (e.g., NASA Systems Engineering Handbook) or by professional societies such as INCOSE (International Council on Systems Engineering). Well-formed SE techniques provide value by establishing the proper scope of the system (e.g., requirements), and by identifying and resolving problems relatively early in project lifecycles, when fixes are less expensive. The second technique (reuse) is applied most commonly to hardware and software; it seeks to avoid replicating design and implementation costs while also reducing risk by placing proven capabilities into operational use. In this paper, we outline a methodology combining these two techniques and extending reuse beyond hardware and software to foundational aspects of a Mission Operation System’s (MOS) design. We describe the system design artifacts that result (e.g., requirements, design documentation), as well as the reusable patterns and elements of the design, and their interrelationships. This approach is enabled by model-based systems engineering (MBSE) techniques and tools and is currently available in SysML form as a plug-in to MagicDraw. Additionally, usage of a rigorous MBSE approach allows for training materials and tutorials to be packaged within the overall model itself. The results of such an approach include decreased cost and risk during the design phase, improved ability of the MOS development team to investigate trade spaces and identify impacts to important flight-ground trade studies. Such results extend into decreased costs and risk in later phases due to improved design, decreased need for late fixes or development of "glue-ware" or scripts to fill unanticipated gaps in functionality, and improved ability to identify and plan testing and other validation activities. Finally, lower operational costs can be expected, both due to improved quality of the MOS, increased ease of maintaining updated knowledge of system configuration, and the fact that training and procedural materials are also updated at the same time as accepted system changes.

Bindschadler, Duane L.↗
NASA NTRSDate not supplied

Increased Rates of Hip and Spine Fractures in Astronauts are Associated with Longer Spaceflight Durations

Given the accelerated declines in bone mineral density reported in US astronauts serving on the International Space Station, there is a possibility that a prolonged exposure to spaceflight could put astronauts at increased fracture risk during subsequent planetary explorations or after return to Earth. To date, there have been no fractures in astronauts during spaceflight. Recently-reported data from a flight study suggested that intake of the bisphosphonate alendronate combined with resistive exercise (on the Advanced Resistive Exercise Device – ARED) preserved more astronauts at their preflight skeletal status after a ~6-mos spaceflight than with ARED exercise alone. However, there is low acceptance of alendronate, or the recommended zoledronic acid, to suppress in-flight bone loss largely due to concern for unintended medication side effects and a perceived absence of astronaut fractures that can be directly attributable to spaceflight exposure. Hence, a recent survey of all astronaut fractures was analyzed to assess whether the rate of postflight fractures could be associated with extended spaceflight exposures. The fracture survey was of 262 astronauts across 8433.6 person-years (PY) and grouped according to previous exposure to a “Long Duration (LD)” spaceflight (3 mos or greater, but typically 6-mos). The number of fractures was modeled using count regression adjusting for i) the repeated measures within individuals across the groups, ii) the differing length of surveillance for each individual and iii) age at start of surveillance for each of the groups. Astronaut Group by Spaceflight Exposure #Individuals PY Covered No Exposure to Spaceflight 262 1882.7 No Exposure to LD spaceflight “Non-LD” 232 6121.3 Exposure to LD spaceflight 42 429.6 Analysis revealed an increased rate of hip and spine fractures for surveillance periods compared between LD Exposure and Non-LD Exposure: Hip – Relative Rate: 3.4 (95%CI: 1.0, 12.0); Spine– Relative Rate: 3.4 (95%CI: 1.0, 11.6). For all other skeletal sites, rates of fracture were similar for LD and Non-LD exposures. Data comparisons were conducted between groups of astronauts to preclude the interpretation of greater physical activity in astronauts as a contributing factor to fracture rates. This analysis of fracture data is the first report associating postflight hip and spine fractures in astronauts with exposure to extended duration spaceflights. Further analyses integrating co-morbidities for bone loss are planned.

skeleton↗
NASA NTRS2014

A Model-Based Approach to Developing Your Mission Operations System

Model-Based System Engineering (MBSE) is an increasingly popular methodology for designing complex engineering systems. As the use of MBSE has grown, it has begun to be applied to systems that are less hardware-based and more people- and process-based. We describe our approach to incorporating MBSE as a way to streamline development, and how to build a model consisting of core resources, such as requirements and interfaces, that can be adapted and used by new and upcoming projects. By comparing traditional Mission Operations System (MOS) system engineering with an MOS designed via a model, we will demonstrate the benefits to be obtained by incorporating MBSE in system engineering design processes.

mos↗
NASA NTRS2016

Optical Evaluation of Digital Micromirror Devices (DMDs) with UV-Grade Fused Silica, Sapphire, and Magnesium Fluoride Windows and Longterm Reflectance of Bare Devices

Digital micromirror devices (DMDs) are commercial micro-electromechanical systems, consisting of millions of mirrors which can be individually addressed and tilted into one of two states (+/-12deg). These devices were developed to create binary patterns in video projectors, in the visible range. Commercially available DMDs are hermetically sealed and extremely reliable. Recently, DMDs have been identified as an alternative to microshutter arrays for space-based multi-object spectrometers (MOS). Specifically, the MOS at the heart of the proposed Galactic Evolution Spectroscopic Explorer (GESE) uses the DMD as a reprogrammable slit mask. Unfortunately, the protective borosilicate windows limit the use of DMDs in the UV and IR regimes, where the glass has insufficient throughput. In this work, we present our efforts to replace standard DMD windows with custom windows made from UV-grade fused silica, low-absorption optical sapphire (LAOS) and magnesium fluoride (MgF2). We present transmission measurements of the antireflection coated windows and the reflectance of bare (window removed) DMDs. Furthermore, we investigated the long-term stability of the DMD reflectance and experiments for coating DMD active area with a layer of pure aluminum (Al) to boost reflectance performance in the UV spectral range (200−400 nm).

reflectance↗
DOE OSTI2024

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

Abstract The electronic and optical properties of 2D transition metal dichalcogenides are dominated by strong excitonic resonances. Exciton dynamics plays a critical role in the functionality and performance of many miniaturized 2D optoelectronic devices; however, the measurement of nanoscale excitonic behaviors remains challenging. Here, a near‐field transient nanoscopy is reported to probe exciton dynamics beyond the diffraction limit. Exciton recombination and exciton–exciton annihilation processes in monolayer and bilayer MoS 2 are studied as the proof‐of‐concept demonstration. Moreover, with the capability to access local sites, intriguing exciton dynamics near the monolayer‐bilayer interface and at the MoS 2 nano‐wrinkles are resolved. Such nanoscale resolution highlights the potential of this transient nanoscopy for fundamental investigation of exciton physics and further optimization of functional devices.

2D materials↗
DOE OSTI2025

Synthesis‐Related Nanoscale Defects in Mo‐Based Janus Monolayers Revealed by Cross‐Correlated AFM and TERS Imaging

2D Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications including non-linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of pristine TMDs. Nanometer-scale characterization of the obtained Janus materials’ morphology and local composition is crucial for both the synthesis optimization and the future device applications. In this work, we present the results of cross-correlated atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) study of Janus monolayers synthesized by the hydrogen plasma-assisted chemical conversion of MoSe 2 and MoS 2 . We demonstrate that the choice of both the growth substrate and the starting TMD influences the residual strain, thereby shaping the nanoscale morphology of the resulting Janus material. Furthermore, by employing TERS imaging, we show the presence of nanoscale islands (≈20 nm across) of MoSe 2 - ${\mathrm{Mo}}_{{\mathrm{Se}}}^{\mathrm{S}}$ (MoS 2 -${\mathrm{Mo}}_{\mathrm{S}}^{{\mathrm{Se}}}$) vertical heterostructures originating from the bilayer nanoislands in the precursor monolayer crystals. The understanding of the origins of nanoscale defects in Janus TMDs revealed in this study can help with further optimization of the Janus conversion process towards uniform and wrinkle-/crack-free Janus materials. Moreover, this work shows that cross-correlated AFM and TERS imaging is a powerful and accessible method for studying nanoscale composition and defects in Janus TMD monolayers.

2D materials↗
DOE OSTI2025

Nonlinear van der Waals Metasurfaces with Resonantly Enhanced Light Generation

Efficient nonlinear wave mixing is of paramount importance for a wide range of applications. However, weak optical nonlinearities pose significant challenges for accessing nonlinear light–matter interaction in compact systems. Here, we experimentally study second harmonic generation in deeply subwavelength 3R-MoS 2 metasurfaces (<λ/13 thick). Our measurements, supported by theoretical analysis, reveal a complex interplay and coupling between geometric resonances, optical extinction, and exciton-driven strong nonlinear susceptibility dispersion. We further demonstrate >150-fold enhancement in second harmonic signal at 740 nm mediated by the A exciton resonance. Additionally, our theoretical studies predict an enhancement of more than 10 6 in second harmonic generation in <100 nm thick structures exhibiting bound states in the continuum resonance. These findings provide insight into accessing and harnessing the unprecedented 3R-MoS 2 nonlinearities at a subwavelength scale, paving the way to ultracompact nonlinear photonic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗