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Before undertaking a detailed description of an automatic-control mechanism, I will state briefly the fundamental conditions for such devices. These are: 1) it must be sensitive at one or more reference values; 2) it must stop the angular motions of the airplane not produced by the pilot; and 3) it must be possible to switch it off and on by a simple hand lever.
Changes in intracranial pressure can be measured dynamically and non-invasively by monitoring one or more cerebrospinal fluid pulsatile components. Pulsatile components such as systolic and diastolic blood pressures are partially transferred to the cerebrospinal fluid by way of blood vessels contained in the surrounding brain tissue and membrane. As intracranial pressure varies these cerebrospinal fluid pulsatile components also vary. Thus, intracranial pressure can be dynamically measured. Furthermore, use of acoustics allows the measurement to be completely non-invasive. In the preferred embodiment, phase comparison of a reflected acoustic signal to a reference signal using a constant frequency pulsed phase-locked-loop ultrasonic device allows the pulsatile components to be monitored. Calibrating the device by inducing a known change in intracranial pressure allows conversion to changes in intracranial pressure.
To support the on-going nuclear thermal propulsion effort, a state-of-the-art non nuclear experimental test setup has been constructed to evaluate the performance characteristics of candidate fuel element materials and geometries in representative environments. The facility to perform this testing is referred to as the Nuclear Thermal Rocket Element Environment Simulator (NTREES). This device can simulate the environmental conditions (minus the radiation) to which nuclear rocket fuel components will be subjected during reactor operation. Test articles mounted in the simulator are inductively heated in such a manner so as to accurately reproduce the temperatures and heat fluxes which would normally occur as a result of nuclear fission and would be exposed to flowing hydrogen. Initial testing of a somewhat prototypical fuel element has been successfully performed in NTREES and the facility has now been shutdown to allow for an extensive reconfiguration of the facility which will result in a significant upgrade in its capabilities
To support the on-going nuclear thermal propulsion effort, a state-of-the-art non nuclear experimental test setup has been constructed to evaluate the performance characteristics of candidate fuel element materials and geometries in representative environments. The facility to perform this testing is referred to as the Nuclear Thermal Rocket Element Environment Simulator (NTREES). This device can simulate the environmental conditions (minus the radiation) to which nuclear rocket fuel components will be subjected during reactor operation. Test articles mounted in the simulator are inductively heated in such a manner so as to accurately reproduce the temperatures and heat fluxes which would normally occur as a result of nuclear fission and would be exposed to flowing hydrogen. Initial testing of a somewhat prototypical fuel element has been successfully performed in NTREES and the facility has now been shutdown to allow for an extensive reconfiguration of the facility which will result in a significant upgrade in its capabilities. Keywords: Nuclear Thermal Propulsion, Simulator
To support the on-going nuclear thermal propulsion effort, a state-of-the-art non nuclear experimental test setup has been constructed to evaluate the performance characteristics of candidate fuel element materials and geometries in representative environments. The facility to perform this testing is referred to as the Nuclear Thermal Rocket Element Environment Simulator (NTREES). This device can simulate the environmental conditions (minus the radiation) to which nuclear rocket fuel components will be subjected during reactor operation. Prototypical fuel elements mounted in the simulator are inductively heated in such a manner so as to accurately reproduce the temperatures and heat fluxes which would normally occur as a result of nuclear fission in addition to being exposed to flowing hydrogen. Recent upgrades to NTREES now allow power levels 24 times greater than those achievable in the previous facility configuration. This higher power operation will allow near prototypical power densities and flows to finally be achieved in most prototypical fuel elements.
Presentation detailing work package to develop comprehensive fusion device safety models over the course of the next three years, including references to a blanket, divertor and magnet design, and statistical reliability models
High-fidelity numerical methods that model the physical layout of a device are essential for the design of many technologies. For methods that characterize electromagnetic effects, these numerical methods are referred to as computational electromagnetics (CEM) methods. Although the CEM research field is mature, emerging applications can still stress the capabilities of the techniques in use today. The design of superconducting circuit quantum devices falls in this category due to the unconventional material properties and important features of the devices covering nanometer to centimeter scales. Such multiscale devices can stress the fundamental properties of CEM tools which can lead to an increase in simulation times, a loss in accuracy, or even cause no solution to be reliably found. While these challenges are being investigated by CEM researchers, knowledge about them is limited in the broader community of users of these CEM tools. This review is meant to serve as a practical introduction to the fundamental aspects of the major CEM techniques that a researcher may need to choose between to model a device, as well as provide insight into what steps they may take to alleviate some of their challenges. Our focus is on highlighting the main concepts without rigorously deriving all the details, which can be found in many textbooks and articles. After covering the fundamentals, we discuss more advanced topics related to the challenges of modeling multiscale devices with specific examples from superconducting circuit quantum devices. We conclude with a discussion on future research directions that will be valuable for improving the ability to successfully design increasingly more sophisticated superconducting circuit quantum devices. Although our focus and examples are taken from this area, researchers from other fields will still benefit from the details discussed here.
The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.
Grid-forming control is regarded as a promising technology for achieving high levels of renewable energy integration in future power grids. To fulfill this role, grid-forming devices is expected to possess fault ride through capability. This paper focuses on the transient stability of a droop control-based grid-forming inverter that utilizes current reference saturation as a current limiting strategy. The objective of this work is to investigate the fault recovery process of the grid-forming inverter and analyze the criterion for transitioning the inverter out of the current limiting mode. The theoretical analysis in this study is validated through time-domain simulations, which compare the results obtained using the circuit current limiting method and the d-axis priority-based current limiting method. Various operational conditions are considered to comprehensively evaluate the performance of the grid-forming inverter during a three-phase short circuit scenario. The simulation results confirm the effectiveness of the proposed theoretical approach.
A summary and selected results from experimental testing of the NASA 10% scale semi-span High-Lift Common Research Model (CRM-HL) at the QinetiQ 5m (5mWT) pressurized low-speed wind tunnel are presented. There were many objectives of this test, the primary being to define a set of reference configurations for dissemination and use within the CRM-HL ecosystem, one in the landing configuration and one in the takeoff configuration. A database of force, moment, pressure and surface flow visualization data was collected to support several objectives: aerodynamic sensitivity to high-lift device positioning, Reynolds number effects on configuration selection, isolation of the effects of various components of the reference configuration e.g. landing gear, nacelle, horizontal tail, etc., and limited repeatability data for uncertainty quantification assessment. Some results were compared to limited data collected at the NASA Langley Research Center 14x22 wind tunnel to assess half-model effects and facility differences. Half-model effects were further studied with use of floor blowing to change boundary layer profile and assess effects on model aerodynamics. Flow visualization data were gathered with fluorescent mini-tufts and UV oil. Finally, test time was spend working on the development of new Particle Image Velocimetry (PIV) and Model Deformation Measurement (MDM) capabilities at the 5mWT facility.
In 2010, nuclear weapon effects experts at Sandia National Laboratories (SNL) were asked to provide a quick reference document containing estimated prompt nuclear effects. This report is an update to the 2010 document that includes updated model assumptions. This report addresses only the prompt effects associated with a nuclear detonation (e.g., blast, thermal fluence, and prompt ionizing radiation). The potential medium- and longer-term health effects associated with nuclear fallout are not considered in this report because, in part, of the impracticality of making generic estimates given the high dependency of fallout predictions on the local meteorological conditions at the time of the event. The results included in this report also do not consider the urban environment (e.g., shielding by or collapse of structures) which may affect the extent of prompt effects. It is important to note that any operational recommendations made using the estimates in this report are limited by the generic assumptions considered in the analysis and should not replace analyses made for a specific scenario/device. Furthermore, nuclear effects experts (John Hogan, SNL, and Byron Ristvet, Defense Threat Reduction Agency (DTRA)) have indicated that the accuracy of effects predictions below 0.5 kilotons (kT) or 500 tons nuclear yield have greater uncertainty because of the limited data available for the prompt effects in this regime. The Specialized Hazard Assessment Response Capability (SHARC) effects prediction tool was used for these analyses. Specifically, the NUKE model within SHARC 2021 Version 10.2 was used. NUKE models only the prompt effects following a nuclear detonation. The algorithms for predicting range-to-output data contained within the NUKE model are primarily based on nuclear test effects data. Probits have been derived from nuclear test data and the U.S. Environmental Protection Agency (EPA) protective action guides. Probits relate the probability of a hazard (e.g., fatality or injury) caused by a given insult (e.g., overpressure, thermal fluence, dose level). Several probits have been built into SHARC to determine the fatality and injury associated with a given level of insult. Some of these probits differ with varying yield. Such probits were used to develop the tables and plots in this report.
The electrical test and assessment of wind turbines go hand in hand with standards and network connection requirements. In this paper, the generic structure of advanced electrical test benches, including grid emulator or controllable grid interface, wind torque emulator, and device under test, is proposed to harmonize state-of-the-art test sites. On the other hand, modern wind turbines are under development towards new features, concerning grid-forming, black-start, and frequency support capabilities as well as harmonic stability and control interaction considerations, to secure the robustness and stability of renewable-energy-based power systems. Therefore, it is necessary to develop new and revised test standards and methodologies to address the new features of wind turbines. This paper proposes a generic test structure within two main groups, including open-loop and closed-loop tests. The open-loop tests include the IEC 61400-21-1 standard tests as well as the additional proposed test options for the new capabilities of wind turbines, which replicate grid connection compliance tests using open-loop references for the grid emulator. In addition, the closed-loop tests evaluate the device under test as part of a virtual wind power plant and perform real-time simulations considering the grid dynamics. The closed-loop tests concern grid connection topologies consisting of AC and HVDC, as well as different electrical characteristics, including impedance, short-circuit ratio, inertia, and background harmonics. The proposed tests can be implemented using available advanced test benches by adjusting their control systems. The characteristics of a real power system can be emulated by a grid emulator coupled with real-time digital simulator systems through a high-bandwidth power-hardware-in-the-loop interface.
Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.
Abstract Solution‐processable organic solar cells (OSCs) represent a promising renewable photovoltaic technology with significant potential for eco‐compatible production. While high power conversion efficiencies (PCEs) have been achieved in OSCs, scaling this technology for high‐throughput manufacturing remains challenging. Key reason lies in the lack of efficient control strategies for the complex and long‐duration morphology evolution during high‐speed coating process with ecofriendly solvents. Here, a donor‐priority rapid aggregation process (DP‐RAP) scheme is proposed to solve this issue by adjusting the aggregation kinetics of donor and acceptor components. DP‐RAP enables blends with a nanoscale fiber network structure and favorable crystallinity, which contributes to balanced carrier transport and reduced recombination losses. As a result, the PCE is improved from 14.3% (reference) to 17.4% (DP‐RAP) for ultra‐high speed coated PM6:BTP‐eC9 devices in atmosphere, which is one of the highest values for non‐halogenated solvent‐processed solar cells at coating speeds of 500 mm s −1 . Moreover, the DP‐RAP based devices remain a stable PCE of approximately 17.4% across a broad range of coating speeds (20–500 mm s −1 ), illustrating its tolerance to the varied manufacturing conditions. This work highlights a promising avenue for the high‐speed, ecofriendly production of efficient OSCs, pushing the boundaries of practical manufacturing in renewable energy technologies.
Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.
The soiling level of heliostat mirrors in Concentrated Solar Power (CSP) fields is one of the key factors that significantly influences optical efficiency. State-of-the-art methods of monitoring heliostats soiling levels still face various challenges, including slow speed, labor-intensive operations, resolution and accuracy constraints or interruptions to solar field operations. Here, we present a rapid, cost-effective, and non-intrusive method for mirror soiling detection based on polarimetric imaging, referred to as Polarimetric Imaging-based Mirror Soiling (PIMS). The compact PIMS device is designed for integration with unmanned aerial vehicles (UAVs), enabling rapid, large-area assessments of heliostat mirrors for efficient soiling detection. Our method utilizes the correlation between the Degree of Linear Polarization (DoLP) and surface soiling level based on Mie scattering theory and Monte Carlo simulations. Field deployment of the PIMS method requires minimal device installation, and its UAV-based operation allows for soiling detection without interrupting plant activities. The PIMS method holds the potential for mirror soiling detection across various concentrated solar power (CSP) plants and can be further adapted for other types of solar fields, such as parabolic trough systems.
Covering the core and the edge region of a tokamak, respectively, the two gyrokinetic turbulence codes Gyrokinetic Electromagnetic Numerical Experiment (GENE) and X-point Gyrokinetic Code (XGC) have been successfully coupled by exchanging three-dimensional charge density data needed to solve the gyrokinetic Poisson equation over the entire spatial domain. Certain challenges for the coupling procedure arise from the fact that the two codes employ completely different numerical methods. This includes, in particular, the necessity to introduce mapping procedures for the transfer of data between the unstructured triangular mesh of XGC and the logically rectangular grid (in a combination of real and Fourier space) used by GENE. Constraints on the coupling scheme are also imposed by the use of different time integrators. First, coupled simulations are presented. We have considered collisionless ion temperature gradient turbulence, in both circular and fully shaped plasmas. Coupled simulations successfully reproduce both GENE and XGC reference results, confirming the validity of the code coupling approach toward a whole device model. Here, many lessons learned in the present context, in particular, the need for a coupling procedure as flexible as possible, should be valuable to our and other efforts to couple different kinds of codes in pursuit of a more comprehensive description of complex real-world systems and will drive our further developments of a whole device model for fusion plasmas.
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.