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At least 271 records · Page 15

In situ fatigue loading stage inside scanning electron microscope

A fatigue loading stage inside a scanning electron microscopy (SEM) was developed. The stage allows dynamic and static high-magnification and high-resolution viewing of the fatigue crack initiation and crack propagation processes. The loading stage is controlled by a closed-loop servohydraulic system. Maximum load is 1000 lb (4450 N) with test frequencies ranging up to 30 Hz. The stage accommodates specimens up to 2 inches (50 mm) in length and tolerates substantial specimen translation to view the propagating crack. At room temperature, acceptable working resolution is obtainable for magnifications ranging up to 10,000X. The system is equipped with a high-temperature setup designed for temperatures up to 2000 F (1100 C). The signal can be videotaped for further analysis of the pertinent fatigue damage mechanisms. The design allows for quick and easy interchange and conversion of the SEM from a loading stage configuration to its normal operational configuration and vice versa. Tests are performed entirely in the in-situ mode. In contrast to other designs, the NASA design has greatly extended the life of the loading stage by not exposing the bellows to cyclic loading. The loading stage was used to investigate the fatigue crack growth mechanisms in the (100)-oriented PWA 1480 single-crystal, nickel-based supperalloy. The high-magnification observations revealed the details of the crack growth processes.

Telesman, Jack↗

Cumulative fatigue damage models

The problem of calculating expected component life under fatigue loading conditions is complicated by the fact that component loading histories contain, in many cases, cyclic loads of widely varying amplitudes. In such a case a cumulative damage model is required, in addition to a fatigue damage criterion, or life relationship, in order to compute the expected fatigue life. The traditional cumulative damage model used in design is the linear damage rule. This model, while being simple to use, can yield grossly unconservative results under certain loading conditions. Research at the NASA Lewis Research Center has led to the development of a nonlinear cumulative damage model, named the double damage curve approach (DDCA), that has greatly improved predictive capability. This model, which considers the life (or loading) level dependence of damage evolution, was applied successfully to two polycrystalline materials, 316 stainless steel and Haynes 188. The cumulative fatigue behavior of the PWA 1480 single-crystal material is currently being measured to determine the applicability of the DDCA for this material.

Mcgaw, Michael A.↗

Comparison between muon spin rotation and neutron scattering studies on the 3-dimensional magnetic ordering of La2CuO(4-y)

Muon spin rotation and neutron scattering studies on powder and single-crystal specimens of La2CuO(4-y) are compared. The apparent difference between the muon and neutron results for the ordered moment in the antiferromagnetic state is interpreted as the signature of increasingly short-ranged spatial spin correlations with increasing oxygen content.

Uemura, Y. J.↗

Experimental study of planetary gases with applications to planetary interior models

High-pressure experimental data on planetary materials are critical in developing planetary models and in addressing otherwise insoluble problems of the internal structure of the major planets. Progress in the last five years has been particularly marked. Maximum static pressure of 550 GPa was achieved. For the first time, X-ray diffraction of solidified gases (Ne, Xe) and ices (H2O) were obtained at pressures above one megabar, single-crystal diffraction of ultralight elements (H2, He) were detected up to 25 GPa, pressures over 200 GPa at 77 K were reached in solid hydrogen, including the discovery of a phase transformation in the molecular solid. Advances in instrumentation and new measurements performed during 1983 to 1988 are summarized.

Bell, Peter M.↗

Remote gate capacitance-voltage studies for noninvasive surface characterization

A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes about 0.5 mm in diameter and gate to semiconductor separations of about 1500 A, it was possible to generate data entirely comparable to that obtained with integrated MIS structures but with the advantage that there was access directly to the free-semiconductor surface. This technique was applied to bulk single-crystal Si and InP samples.

Chang, R. R.↗

Effect of initial gamma prime size on the elevated temperature creep properties of single crystal nickel base superalloys

The influence of initial gamma-prime size and shape on the high-temperature creep properties of two single-crystal Ni-base superalloys was investigated. The two alloys were chosen to represent different magnitudes of gamma/gamma-prime lattice mismatch. A range of initial microstructures was produced by various quenching and aging treatments. Creep-rupture testing at 1000 C was performed under stresses where gamma-prime directionally coarsens to form gamma/gamma-prime lamellae in the early portion of the creep life. Both alloys exhibited a peak in creep resistance as a function of initial gamma-prime size. The peak corresponded to an initial microstructure consisting of cuboidal precipitates aligned along 001 line directions. These aligned cuboidal gamma-prime particles directionally coarsened into a relatively perfect lamellar gamma/gamma-prime structure in the early stages of creep, whereas the more irregularly shaped and distributed gamma-prime particles in both under- and overaged material formed more irregular lamellae with more imperfections. The alloy with a lower magnitude of mismatch was less sensitive to initial gamma-prime size and shape.

Nathal, M. V.↗

Electrochemical studies of thin films of conducting polymers and conducting polymer composites deposited on metal and semiconductor electrodes

Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.

Nagasubramanian, G.↗

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

Kurdi, B. N.↗

Isothermal dendritic growth - A low gravity experiment

The Isothermal Dendritic Growth Experiment has been designed to test dendritic growth theory at low undercoolings, under microgravity conditions in the Space Shuttle Cargo Bay-borne Material Science Laboratory. The experiment will be essentially autonomous, although limited in-flight interaction through a computer interface is planned. A crystal growth chamber able to yield oriented single-crystal dendritic growth will be incorporated; 'seeding' the chamber with a crystal of the requisite orientation will not in itself meet this requirement.

Glicksman, M. E.↗

Excimer laser annealing: A gold process for CZ silicon junction formation

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Wong, David C.↗

Silicon carbide - Progress in crystal growth

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Powell, J. Anthony↗

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si

Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.

Feng, Z. C.↗

Advances in thin-film solar cells for lightweight space photovoltaic power

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, Geoffrey A.↗

High temperature isothermal and cyclic oxidation behavior of a single crystal Ni base superalloy

High-temperature oxidation behavior of a Ni-base superalloy, PWA1480, developed for use as single-crystal blades and vanes in advanced gas turbines, has been assessed. Isothermal and cyclic oxidation tests up to 200 hours were conducted at 1323, 1410, and 1473 K. The alloy was evaluated as to sample weight change, type of scale formed, type and amount of spall, and microstructural changes. The oxidation attack was more severe in cyclic as compared with isothermal oxidation. Also, enormous growth of the gamma-prime precipitate was observed at 1423 K during cyclic oxidation.

Hebsur, M. G.↗

Study of high temperature oxide superconductors

Experimental studies are reported whose results indicate that proper processing procedures are critical to the formation of high-temperature copper oxide superconductors. Superconducting 123 films can be fabricated using the green 211 phase as a substrate. The transition temperature and transition width characteristics of these films are better than those obtained when other oxide compounds are used as substrates. A compact or single-crystal 211 phase will be desirable as a substrate for high-quality thin films. A new high T(c) copper oxide compound with nonrare earth elements was prepared using high-temperature processing. A YBa2Cu3O7-Ag composite with improved electrical conductivity was also prepared.

Wu, M. K.↗

The influence of high thermal gradient casting, hot isostatic pressing and alternate heat treatment on the structure and properties of a single crystal nickel base superalloy

A development program has been conducted to improve the cyclic properties of the PWA 1480 single-crystal superalloy by reducing or entirely eliminating casting porosity at fatigue-initiation sites, through the use of improved casting process parameters and HIPing; potential mechanical property improvements in a high-pressure hydrogen environment were also sought in alternatives to the standard coating and heat-treatment cycle. High thermal gradient casting was found to yield a reduction in overall casting porosity density and pore sizes. The most dramatic mechanical property improvement resulted from HIPing.

Fritzemeier, L. G.↗

The effect of hydrogen on the deformation and fracture of PWA 1480

The effect of internal hydrogen on mechanical properties and fracture behavior is studied in the single-crystal nickel-base superalloy PWA 1480. In particular, plane strain fracture toughness and tensile tests have been performed in hydrogen-free samples and hydrogen-gas phase-charged samples in two different sample orientations. The mechanical properties, as well as the fracture process, were found to be very dependent on orientation. Hydrogen did not affect the yield strength but reduced the uniform tensile elongation more than 75 percent. However, hydrogen reduced the tensile reduction-in-area and the fracture toughness by only 10 percent. Cleavage of the eutectic gamma-prime, as well as the role of hydrogen trapping, will be discussed. These results will be analyzed in terms of the effects that orientation, microstructure, and hydrogen have on the fracture process.

Walston, W. S.↗