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Results for “surface states”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗
NASA NTRS1975

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

Siekhaus, W. J.↗
NASA NTRS1975

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
NASA NTRS1977

High efficiency thin-film GaAs solar cells

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Stirn, R. J.↗
NASA NTRS1977

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

Chen, C. Y.↗
NASA NTRS1982

Studies of clusters in the gas phase and application to an understanding of transitions from gaseous to the surface and condensed state

Studies of the structure, stability, electronic properties, and formation kinetics of small clusters were reviewed which provide information useful in furthering understanding of nucleation processes, liquid state properties, and the nature of surfaces. Using mass spectrometric coupled with various high pressure ion clustering and Stark effect-molecular beam techniques, the details of the primary clustering steps leading to the nucleation of bulk liquid from the vapor were and obtained by direct observation results are presented.

Castleman, A. W., Jr.↗
NASA NTRS1982

The utilization of Nimbus-7 SMMR measurements to delineate rainfall over land

Based on previous theoretical calculations, an empirical statistical approach to use satellite multifrequency dual polarized passive microwave data to detect rainfall areas over land was initiated. The addition of information from a lower frequency channel (18.0 or 10.7 GHz) was shown to improve the discrimination of rain from wet ground achieved by using a single frequency dual polarized (37 GHz) channel alone. The algorithm was developed and independently tested using data from the Nimbus-7 Scanning Multichannel Microwave Radiometer. Horizontally and vertically polarized brightness temperature pairs at 37, 18, 10.7 GHz were sampled for raining areas over land (determined from ground base radar), wet ground areas (adjacent and upwind from rain areas determined from radar), and dry land regions (areas where rain had not fallen in a 24h period) over the central and eastern United States. Surface thermodynamic temperatures were both above and below 15 deg C.

Rogers, E.↗
NASA NTRS1985

Giant Planets and Their Satellites: Cosmochemistry, Evolution and Structure

The following topics were discussed: surface state of Titan; statistical mechanical treatment of clathrate hydrates; planetary dynamos; formation of the giant planets; the e-ring; Uranian satellites and atmosphere; 10 sulfur lakes; episodic tidal evolution; resurfacing of Ganymede; and the origin of the Moon.

Stevenson, D. J.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1987

Electrochemical studies of thin films of conducting polymers and conducting polymer composites deposited on metal and semiconductor electrodes

Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.

Nagasubramanian, G.↗
NASA NTRS1988

Sulfur as a surface passivation for InP

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Iyer, R.↗
NASA NTRS1989

Heat flux measurements

A new automated, computer controlled heat flux measurement facility is described. Continuous transient and steady-state surface heat flux values varying from about 0.3 to 6 MW/sq m over a temperature range of 100 to 1200 K can be obtained in the facility. An application of this facility is the development of heat flux gauges for continuous fast transient surface heat flux measurement on turbine blades operating in space shuttle main engine turbopumps. The facility is useful for durability testing at fast temperature transients.

Liebert, Curt H.↗
NASA NTRS1989

Electrogastrograms during motion sickness in fasted and fed subjects

Seven human volunteers were subjected to stressful Coriolis stimulation (rotating chair) either during the fasted state or following the ingestion of yogurt (6 oz). Subjects tested after yogurt reached a malaise-III (M-III) endpoint of motion sickness after significantly (p smaller than 0.01) fewer head movements than subjects tested in the fasted state. Surface electrogastrogram (EGG) recordings at M-III were similar for both dietary stats and consisted of a brief period of tachygastria, followed by a period of low-amplitude EGG waves. Ingestion of yogurt enhanced susceptibility to motion sickness but did not affect the associated pattern of EGG.

Stewart, John J.↗
NASA NTRS1988

Electrochemical evaluation of the p-Si/conducting polymer interfacial properties

Results are presented from an experimental investigation of the contact resistance and interfacial properties of a p-Si/conducting polymer interface for solar cell applications. The electronic character of the polymer/semiconductor function is determined by studying the electrochemical behavior of both poly(isothianapthene) (PITN) and polypyrrole (PP) in an acetonitrile solution on p-silicon electrodes. The results obtained indicate that while PITN is intrinsically more conductive than PP, neither passivates surface states nor forms ohmic contact.

Nagasubramanian, G.↗
NASA NTRS1989

Heat flux measurements

This paper discusses a new automated, computer-controlled heat flux measurement facility. Continuous transient and steady-state surface heat flux values varying from about 0.3 to 6 MW/sq m over a temperature range of 100 to 1200 K can be obtained in the facility. An application of this facility is the development of heat flux gages for continuous fast transient surface heat flux measurement on turbine blades operating in Space Shuttle main engine turbopumps. The facility is also useful for durability testing at fast temperature transients.

Liebert, Curt H.↗
NASA NTRS1989

Aerodynamic applications of infrared thermography

A series of wind tunnel experiments were conducted as part of a systematic study for evaluation of infrared thermography as a viable non-intrusive thermal measurement technique for aerodynamic applications. The experiments consisted of obtaining steady-state surface temperature and convective heat transfer rates for a uniformly heated cylinder in transverse flow with a Reynolds number range of 46,000 to 250,000. The calculated convective heat transfer rates were in general agreement with classical data. Furthermore, IR thermography provided valuable real-time fluid dynamic information such as visualization of flow separation, transition and vortices.

Daryabeigi, Kamran↗
NASA NTRS1993

Determination of the structure and bond energies of NiO2 and CuO2

On the basis of extensive ab initio calculations, we estimate the metal-O2 binding energies of NiO2 and CuO2 to be 48 +/- 7 and 18 +/- 4 kcal/mol, respectively. We feel that the experimental estimate of 57 +/- 10 kcal/mol for the binding energy of NiO2 is slightly too large, while we are in complete agreement with the experimental estimate of 15 +10/-5 kcal/mol for CuO2. While the 1A1 ground state of NiO2 definitely has a side-on C(2v) structure, matrix isolation studies suggest that CuO2 has an end-on C(s) structure. Calculations at the coupled-cluster singles plus doubles level with a perturbational estimate of triple excitations, CCSD(T), produce a 2A2 state with C(2v) as a global minimum. However, the entire 2A-double prime ground-state surface is exceedingly flat, precluding a reliable determination of the gas-phase equilibrium structure.

Bauschlicher, Charles W., Jr.↗