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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Identification of Medical Training Methods for Exploration Missions

As the National Aeronautics and Space Administration (NASA) and its international partner agencies anticipate eventual exploration missions of longer duration, there is a need to plan for the medical capabilities necessary to maximize crew health and provide the best likelihood of mission success. Current spaceflights consist of 5- to 6-month excursions to the International Space Station (ISS) in low-Earth orbit (LEO), and a 12-month ISS mission is currently in planning stages. However, missions to a near-Earth asteroid (NEA), a return to the moon, or even a mission to Mars will demand unprecedented medical capabilities, particularly relating to the training of the crew medical officers (CMOs). In its attempts to address the questions about medical preparation for spaceflight beyond LEO, the Exploration Medical Capability (ExMC) element within NASA's Human Research Program (HRP) defines a series of gaps. These gaps are shortcomings in knowledge, training, or technology that require resolution before an exploration mission can be undertaken. The ExMC element maintains current information about measures to close these gaps while developing plans for further investigation and research. Data pertaining to the gaps and their present status are available to the general public on the NASA Human Research Wiki and the NASA Human Research Roadmap Web sites (34, 36). One such gap, Gap 3.01, identifies a lack of knowledge about the optimal training methods for in-flight medical conditions identified on the Exploration Medical Condition List (EMCL), taking into account the crew medical officer s (CMOs) clinical background (33). This broad statement encompasses several related issues with the current methods of training CMOs and the medical ground support staff, specifically flight surgeons and biomedical engineers (BMEs) located in mission control, in addition to questions pertaining to the ways in which training will need to be adapted for the medical contingencies unique to exploration missions. To determine the optimal methods of medical training for an exploration medical crew and their ground support team, the historical context of medical operations, the current CMO training methods, and potential alternative training methods were identified.

Long duration space flight↗
NASA NTRS1999

Thin Film Li Ion Microbatteries for NASA Applications

Rechargeable thin film microbatteries have recently become the topic of widespread research for use in low power applications such as battery-backed CMOS memory, miniaturized implantable medical devices and smart cards. In particular, the Center for Integrated Space Microsystems (CISM) at NASA's Jet Propulsion Laboratory has interest in applying this technology for secondary power systems in miniaturized satellites, microsensors, microactuators and other remote MEMS applications. The general requirements of the microbatteries for these applications are high specific energy, wide range of temperature stability. low self-discharge rate, and flexibility of cell design. The thin film Li ion materials system using LiCoO2(LiPO(x)N(1-x))SnO is expected to fulfill these requirements.

West, W. C.↗
NASA NTRS1981

RAD hard PROM design study

The results of a preliminary study on the design of a radiation hardened fusible link programmable read-only memory (PROM) are presented. Various fuse technologies and the effects of radiation on MOS integrated circuits are surveyed. A set of design rules allowing the fabrication of a radiation hardened PROM using a Si-gate CMOS process is defined. A preliminary cell layout was completed and the programming concept defined. A block diagram is used to describe the circuit components required for a 4 K design. A design goal data sheet giving target values for the AC, DC, and radiation parameters of the circuit is presented.

Source record↗
NASA NTRSDate not supplied

Developing the Future of Gamma-ray Astrophysics with Monolithic Silicon Pixels

This paper explores the potential of AstroPix, a project to develop Complementary Metal Oxide Semiconductor (CMOS) pixels for the next generation of space-based high-energy astrophysics experiments. Multimessenger astrophysics is a rapidly developing field whose upcoming missions need support from new detector technology such as AstroPix. ATLASPix, a monolithic silicon detector optimized for the ATLAS particle detector at CERN, is the beginning of the larger AstroPix project. Energy resolution is a driving parameter in the reconstruction of gamma-ray events, and therefore the characterization of ATLASPix energy resolution is the focus of this paper. The intrinsic energy resolution of the detector exceeded our baseline requirements of 10% at 60 keV. The digital output of ATLASPix results in energy resolutions insufficient to advance gamma-ray astronomy. However, the results from the intrinsic energy resolution indicate the digital capability of the detector can be redesigned, and the next generation of pixels for the larger AstroPix project have already been constructed. Iterations of AstroPix-type pixels are an exciting new technology candidate to support new space-based missions.

Isabella Brewer↗
NASA NTRS1992

A VLSI implementation of DCT using pass transistor technology

A VLSI design for performing the Discrete Cosine Transform (DCT) operation on image blocks of size 16 x 16 in a real time fashion operating at 34 MHz (worst case) is presented. The process used was Hewlett-Packard's CMOS26--A 3 metal CMOS process with a minimum feature size of 0.75 micron. The design is based on Multiply-Accumulate (MAC) cells which make use of a modified Booth recoding algorithm for performing multiplication. The design of these cells is straight forward, and the layouts are regular with no complex routing. Two versions of these MAC cells were designed and their layouts completed. Both versions were simulated using SPICE to estimate their performance. One version is slightly faster at the cost of larger silicon area and higher power consumption. An improvement in speed of almost 20 percent is achieved after several iterations of simulation and re-sizing.

Kamath, S.↗
NASA NTRS2000

3D MEMS in Standard Processes: Fabrication, Quality Assurance, and Novel Measurement Microstructures

Three-dimensional MEMS microsystems that are commercially fabricated require minimal post-processing and are easily integrated with CMOS signal processing electronics. Measurements to evaluate the fabrication process (such as cross-sectional imaging and device performance characterization) provide much needed feedback in terms of reliability and quality assurance. MEMS technology is bringing a new class of microscale measurements to fruition. The relatively small size of MEMS microsystems offers the potential for higher fidelity recordings compared to macrosize counterparts, as illustrated in the measurement of muscle cell forces.

Lin, Gisela↗
NASA NTRS1993

FTDD973: A multimedia knowledge-based system and methodology for operator training and diagnostics

FTDD973 (973 Fabricator Training, Documentation, and Diagnostics) is an interactive multimedia knowledge based system and methodology for computer-aided training and certification of operators, as well as tool and process diagnostics in IBM's CMOS SGP fabrication line (building 973). FTDD973 is an example of what can be achieved with modern multimedia workstations. Knowledge-based systems, hypertext, hypergraphics, high resolution images, audio, motion video, and animation are technologies that in synergy can be far more useful than each by itself. FTDD973's modular and object-oriented architecture is also an example of how improvements in software engineering are finally making it possible to combine many software modules into one application. FTDD973 is developed in ExperMedia/2; and OS/2 multimedia expert system shell for domain experts.

Hekmatpour, Amir↗
NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments: Problem or Solution?

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). In addition to hardening-by-process and hardening-by-design, "hardening-by-reconfiguration", when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive self-reconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Partly degraded resources are still used, while completely damaged resources are bypassed. Designs suitable for various environmental conditions can be determined prior to operation or can be determined in-situ, by adaptive reconfiguration algorithms running on built-in digital controllers. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfigurable devices were exposed to, and degraded by, low temperatures (approx. 196 C), high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms. Taking this technology from Technology Readiness Level (TRL) 3 to TRL 5 is the target of a current NASA project.

Field Programmable Transistor Array (FPTA)↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
NASA NTRS2018

A First Look at 22 nm FDSOI SRAM Single-Event Test Results

We will present the first ever single-event effects testing results on a 22 nm fully-depleted silicon-on-insulator test chip. The 128 MB SRAMs were irradiated with heavy ions and the results are compared to previous technology generations.

Silicon-on-insulator↗
NASA NTRS2018

CubeX: A Compact X-Ray Telescope Enables Both X-Ray Fluorescence Imaging Spectroscopy and Pulsar Timing Based Navigation

This paper describes the benefits of a miniaturized X-ray telescope payload in the context of a lunar mission. The first part describes the payload in detail, the second part summarizes a small satellite mission concept that utilizes its compact form factor and performance. The CubeX instrument can be used for both X-ray fluorescence (XRF) imaging spectroscopy and X-ray pulsar timing based navigation (XNAV). Using our recent technological advances in X-ray optics and sensors, CubeX combines high angular resolution (<1 arcminutes) Miniature Wolter-I X-ray optics (MiXO) with a common focal plane consisting of high spectral resolution (<150 eV at 1 keV) CMOS X-ray sensors and a high timing resolution (< 1 usec) SDD X-ray sensor. This novel combination of the instruments enables both XRF measurements and XNAV operations without moving parts. The high angular resolution of the MiXO opens a wide range of orbital configurations for observation. Given that performance, the instrument has unprecedented small volume (~1×1×6U), mass (<6 kg), and power (<9W) requirements and opens a wide range of applications for a variety of targets and missions including NEOs and Martian moons. In this paper we illustrate one potential application for a lunar mission concept: The elemental composition of the Moon holds keys to understanding the origin and evolution of both the Moon and the Earth. X-ray fluorescence (XRF), induced either by solar X-ray flux or energetic ions, carries decisive signatures of surface elemental composition. X-ray observations, therefore, give a unique, powerful diagnostic tool for remotely determining elemental abundances including major rock forming elements such as Mg, Al, Na, Si, Fe, and Ca. Through high-resolution XRF imaging spectroscopy, CubeX searches for small patches of elusive lower crust and mantle material excavated within and around impact craters. CubeX identifies regional compositional variations and allows straightforward comparison of elemental distributions with the surface topography from LRO and the gravity data from GRAIL. The elemental compositions of the lower crust and the mantle are sensitive to the conditions of the giant impact which led to the Moon's formation and the subsequent lunar magma ocean (LMO), and thus they are key missing pieces in understanding the formation and early evolution of the Moon. In between XRF observations, CubeX also leverages the technology of high resolution X-ray imaging and time series measurements to conduct XNAV operations and evaluate their performance. Deep space navigation is a critical issue for small planetary missions. XNAV can enable low-cost autonomous deep-space navigation, and has the potential to greatly assist, or even outperform, NASA's Deep Space Network (DSN) or ESA's European Space Tracking (ESTRACK). CubeX is designed to perform sequential observations of 3-4 millisecond pulsars (MSPs) to solve the spacecraft trajectory for absolute navigation, and explore the remote sensing capability of XNAV. In the presented mission concept, the Moon's relative proximity enables a straightforward evaluation of the XNAV performance through DSN.

x-ray spectroscopy↗
DOE OSTI2023

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Despite its scalability and CMOS process compatibility, the limited endurance and sub-optimal stress response of ferroelectric Zr-substituted hafnia [(Hf,Zr)O 2 ] have been one of the key impediments toward its integration into practical device and technology applications. Here, using electrical measurements complemented by photoluminescence spectroscopy, we investigate the underlying mechanisms behind this behavior in 10 nm thick W/Hf 0.5 Zr 0.5 O 2 /W capacitors. Analyzing the evolution of leakage current with stress cycles and the spectroscopic response of the stress-induced leakage current, we attribute the behavior to defect levels, which lie at 0.6 eV from the conduction band edge of the ferroelectric. Photoluminescence spectroscopy, in turn, further corroborates the defect level's position within the bandgap while enabling its attribution to the presence of oxygen vacancies. Furthermore, this work helps to identify oxygen vacancies as the key factor responsible for the degraded endurance and stress response in (Hf,Zr)O 2 and subsequently motivates the exploration of methods to reduce the oxygen vacancy concentrations without destabilizing the ferroelectric orthorhombic phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2021

Quartz Clock Oscillator Design and Analysis

Engineers at Sandia National Laboratories (SNL) have used quartz - based clock oscillators in various missions since the 1980s. As such, the design of these frequency control devices requires a high degree of reliability and producibility. The quartz clock oscillators designed at SNL have evolved over many years and are currently developed in house and fabricated using SNLs internal CMOS foundry. They are designed to operate in harsh environments, including temperature, radiation, shock and vibration. This report documents the methodology behind the design of quartz clock oscillators developed at SNL and includes an overview of quartz resonator technology and usage guidelines and a detailed overview of oscillator circuits.

42 ENGINEERING↗
NASA NTRS2008

Radiation effects assessment of MRAM devices

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

McClure, Steve↗
DOE OSTI2022

Cryogenic electronics for noble liquid neutrino detectors

In this paper we present the general features of cryogenic (or “cold”) electronics for noble liquid time projection chambers, with design principles and details for neutrino physics, a brief history of the technology and details of recent research and development that is driving the design of the detectors under construction. Finally, some comments on future R&D envisioned and the impact of this work on other fields is described. “Cold” in the context of this work applies to CMOS devices operated at 77 K and above, at liquids temperatures of LAr (89 K), LKr (125 K) and LXe (165 K), with most of the tests performed in, or at LN 2 (77 K). Additionally, the paper is concentrated on the design of cold electronics for large liquid argon TPCs, those that have been successfully operated, MicroBooNE and ProtoDUNE, and those designed or under construction, such as SBND and DUNE first and second 10 kton modules. The high performance achieved with MicroBooNE and ProtoDUNE – a high signal-to-noise ratio combined with high stability of response – is mainly due to the integral approach to design and construction of sensing electrodes with cold readout electronics in a modular approach with the cryostat signal feed-throughs incorporating warm interface electronics into a Faraday cage with the cryostat. The integral concept is described in some detail in this paper.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

28nm front end ASIC and 12” LGADs for 3D integration

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗