Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electrical contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Elizabeth A Kolawa↗

Solving A Corrosion Problem

The corrosion problem, it turned out, stemmed from the process called electrolysis. When two different metals are in contact, an electrical potential is set up between them; when the metals are surrounded by an electrolyte, or a conducting medium, the resulting reaction causes corrosion, often very rapid corrosion. In this case the different metals were the copper grounding system and the ferry's aluminum hull; the dockside salt water in which the hull was resting served as the electrolyte. After identifying the source of the trouble, the Ames engineer provided a solution: a new wire-and-rod grounding system made of aluminum like the ferry's hull so there would no longer be dissimilar metals in contact. Ames research on the matter disclosed that the problem was not unique to the Golden Gate ferries. It is being experienced by many pleasure boat operators who are probably as puzzled about it as was the Golden Gate Transit Authority.

Source record↗

Carbon fiber study. A compilation of an intergovernmental committee study

Carbon fibers have opened a wealth of new structural engineering and consumer product opportunities. The potential benefits are higher strength, and lighter weight military and commercial products, which portend energy savings and increases safety. Unfortunately, these benefits are not realized without risk. Inadvertent fiber release, during manufacture or by destruction of the resin binder in fire, is the major hazard associated with composites. The carbon (or graphite) fibers are finer than human hair and if released into the air, they can be easily transported by winds or currents. In contact with electrical devices, they can create resistive loading, short circuits, and arcing, resulting in stoppages or destruction. Their health impact is not fully known and requires careful research and analysis before any firm conclusions can be reached; however, based upon current available information, they are primarily an irritant to the eyes and skin, like fiberglass, rather than carcinogenic or destructive to lung tissue. Major manufacturers are aware of the unique problems associated with these materials and have successfully applied controls to avoid the inplant problems.

Source record↗

Low noise cryogenic dielectric resonator oscillator

A microwave oscillator is provided which can operate at a temperature of many degrees above absolute zero while providing very low phase noise that has heretofore generally required temperatures within a few degrees K. The oscillator includes a ring-shaped resonant element of ruby (sapphire plus chromium) or iron sapphire crystal, lying adjacent to a resonator element of sapphire, so that the regenerator element lies directly in the magnetic field of the resonator element. The resonator element is substantially devoid of contact with electrically conductive material. Microwave energy of a pump frequency (e.g., 31 GHz) is outputted from the regenerator element, while signal energy (e.g., 10 GHz) is outputted from the resonator element.

Dick, G. John↗

Universal nondestructive mm-wave integrated circuit test fixture

Monolithic microwave integrated circuit (MMIC) test includes a bias module having spring-loaded contacts which electrically engage pads on a chip carrier disposed in a recess of a base member. RF energy is applied to and passed from the chip carrier by chamfered edges of ridges in the waveguide passages of housings which are removably attached to the base member. Thru, Delay, and Short calibration standards having dimensions identical to those of the chip carrier assure accuracy and reliability of the test. The MMIC chip fits in an opening in the chip carrier with the boundaries of the MMIC lying on movable reference planes thereby establishing accuracy and flexibility.

Romanofsky, Robert R.↗

The Role of Proximity Effects in Transition-Edge Sensor Design and Performance

Transition-edge sensor (TES) microcalorimeters and bolometers are under development by numerous groups worldwide for a variety of applications involving the measurement of particle and photon radiation. Recent experimental and theoretical progress has led to the realization that the fundamental physics of some TES systems involves the longitudinal proximity effect between the electrical bias contacts and the TES. As such, these devices are described as SS'S (or SN'S) weak-links exhibiting Fraunhofer-like magnetic field dependence, and exponential temperature dependence, of the critical current. These discoveries, for the first time, provide a realistic theoretical framework for predicting the resistive transition as a function of temperature, current and magnetic field. In this contribution, we review the latest theoretical and experimental results and investigate how proximity effects play an important role in determining the resistive transition characteristics, which ultimately determines the dynamic range and energy resolution of TES detectors. We investigate how these effects could be utilized in device design to engineer desired transition characteristics for a given application.

Smith, Stephen J.↗

Report on ZBook Barrel Connector

This memorandum serves to document the test results for mating and demating the barrel type power connector on the ZBook Laptop Computer.

Connector↗

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗

Methods for Anticipating Problems with Electrical Wiring

Passive and active methods for anticipating problems with electrical wiring are provided. An insulative material in contact with an electrical conductor has at least one impurity that is impregnated in the insulative material and/or disposed thereon. An environment around the electrical conductor is monitored for the presence or the level of the impurity(ies) emanating from the insulative material in the form of a gaseous effluent. An alarm signal is generated when a predetermined level of the gaseous effluent is detected.

William T Yost↗

Graphite/Epoxy Deicing Heater

Heat applied close to surface protected. One ply of highly electrically- and thermally-conductive brominated-graphite fiber composite laminated between two plies of electrically-insulating composite material, with michel foil making contact with end portions of graphite fibers. Part of foil exposed beyond composite to serve as electrical contact. Graphite/Epoxy composite heater developed to prevent and reverse formation of ice on advanced composite surfaces of aircraft.

Hung, Ching-Cheh↗

Diffusion-Barrier Contacts For Solar Cells

Electrically conductive diffusion barriers of TaSiN prevent diffusion of metal from overlying metal contacts into underlying silicon during processing at high temperature, improving performance during subsequent use in low-intensity light at low temperature.

Stella, Paul M.↗

The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

The effect of introducing a very small amount of Ga into Au-contacted InP on the behavior of that contact system was investigated. It was found that Ga affected both the metallurgical and the electrical behavior of the system. It is shown that Ga atoms in the interstices of the Au lattice prevent the solid-state reactions that normally take place between Au and InP during contact sintering and cause an order of magnitude reduction in the specific contact resistivity. It is also shown that the presence of Ga affects the reactions of GaP and GaAs with Au contacts.

Weizer, Victor G.↗