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At least 289 records · Page 16

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DOE OSTI2022

Investigation of Rare Earth Elements Mobility Using Molecular Dynamics

Rare Earth Elements (REE) are critical many applications such as electronics, permanent magnets, agricultural etc. Effective separation of REEs is a challenge due to their similarities in chemical and physical properties. Current separation processes are costly and environmentally detrimental. Therefore, research on REEs mobility in water-based solvents is necessary to design effective separation processes. In this research, the key kinetic and thermodynamic parameters, including diffusion coefficient and hydration shell are determined under the influence of external electric field. The diffusion coefficient of metal ions increases due to electric field in pure water.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2022

Investigation of Rare Earth Elements Mobility Using Molecular Dynamics

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2020

Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes

The presence of alloy disorder in III-nitride materials has been demonstrated to play a significant role in device performance through effects such as carrier localization and carrier transport. Relative to blue light emitting diodes (LEDs), these effects become more severe at green wavelengths. Because of the potential fluctuations that arise due to alloy disorder, full three-dimensional (3D) simulations are necessary to accurately relate materials properties to device performance. We demonstrate experimentally and through simulation that increased quantum well (QW) number in c-plane green LEDs contributes to excess driving voltage, and therefore reduced electrical efficiency. Experimentally, we grew an LED series with the number of QWs varying from one to seven and observed a systematic increase in voltage with the addition of each QW. Trends in LED electrical properties obtained from 3D simulations, which account for the effects of random alloy fluctuations, are in agreement with experimental data. Agreement is achieved without the need for adjusting polarization parameters from their known values. Finally, from these results, we propose that the polarization induced barriers at the GaN/InGaN (lower barrier/QW) interfaces and the sequential filling of QWs both contribute significantly to the excess forward voltage in multiple QW c-plane green LEDs.

42 ENGINEERING↗

NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗

NASA NTRS1981

Low strain creep and aging of aluminum alloy 2219-T87 sheet

The constant load creep and isothermal aging characteristics of aluminum alloy 2219-T87 sheet have been studied experimentally and analytically in the temperature range 250 to 650 F at stress levels between 2.9 and 4.0 ksi (20 to 283 MPa). Testing variables were closely and automatically monitored. The data generated agree somewhat with the literature data base at lower temperatures, but above 500 F, discrepancies of greater than an order of magnitude in the time to 1% creep strain occur. Good correlation was found with the Larson-Miller parameter as modeled by a second-order polynomial in stress. Constitutive equations for time to 0.1%, 0.2%, 0.5%, and 1.0% creep are given. Information on residual mechanical properties and electrical conductivity is also provided.

Navrotski, G.↗

DOE OSTI2022

Transient behavior of drift and ionization in atmospheric pressure nitrogen discharge

The fluid models are frequently used to describe a non-thermal plasma such as a streamer discharge. The required electron transport data and rate coefficients for the fluid model are parametrized using the local field approximation (LFA) in first order models and the local-mean-energy approximation (LMEA) in second order models. We performed Monte Carlo simulations in Nitrogen gas with step changes in the E/N (reduced electric field) to study the behavior of the transport properties in the transient phase. During the transient phase of the simulation, we extract the instantaneous electron mean energy, which is different from the steady state mean electron energy, and the corresponding transport parameters and rate coefficients. Our results indicate that the mean electron energy is not a suitable parameter for mobility/drift of electrons due to big difference in momentum relaxation and energy relaxation. Furthermore, the high energy threshold rates such as ionization show a strong correlation to mean electron energy. In second order models where the energy-balance equation is solved, we suggest that it would rather be appropriate to use the local electric field to find electron drift velocity in gases such as Nitrogen and the local mean electron energy to determine the ionization and excitation rates.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2024

Induced Polarization of Clayey Rocks and Soils: Non‐Linear Complex Conductivity Models

Abstract The past decades have witnessed the increased applications of induced polarization (IP) method in the critical zone studies with ubiquitous clay minerals. Although IP outperforms traditional electrical and electromagnetic methods through its unique ability to measure quadrature conductivity, the nonlinearity that quadrature conductivity behaves with salinities and frequencies greatly tortures IP practitioners, as (a) salinity‐dependency makes the quadrature conductivity a varyingly unstable parameter to quantitatively estimate hydraulic properties and clay content; (b) frequency‐dependent Cole‐Cole and Debye/Warburg decomposition models, although mathematically sound, physically mingle the properties of pore water and clay minerals and are empirical in nature. From basic principles, we demonstrate that quadrature conductivity remains a hybrid property involving both clay and water, and develop relevant models to distinguish them. Our models are validated by theories, experiments, simulations, and comparisons, all of which proclaim considerable advantages over previous models and offer the prospect of quantitative applications.

58 GEOSCIENCES↗

DOE OSTI2021

Liquid Crystal Films as Active Substrates for Nanoparticle Control

Organizing nanoparticles in a controlled way allows us to monitor their optical properties. It is particularly interesting to organize them on top of liquid crystal films to take advantage, in a second step, of the easy actuation of liquid crystals with external parameters such as temperature, electric fields, and so forth. We show that despite their fluidity, nematic and smectic films allow the formation of well-ordered hexagonal domains of gold spherical nanoparticles (AuNPs) at their surface, but we also show that both nematic films and AuNP domains impact each other. Using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), and spectrophotometry, we compare nematic, polymer-stabilized nematic, and smectic films with AuNP domains made of NPs of diameter 6 nm. On the liquid crystal films, depressions are revealed below the AuNP domains, whereas the AuNP domains appear well-organized but with a hexagonal period shortened with respect to AuNP monolayers formed on hard substrates. We interpret these features by the anchoring tilt imposed by the AuNP domains on the liquid crystal molecules. The smectic-A layers characteristic of the nematic surface transform into smecticC layers, which induce the formation of depression. Here, the energy penalty associated with the local smectic-A/smectic-C transition induces the shortening of the AuNP domain period in order to decrease the AuNP domain surface. The observed large depth of the polymer-stabilized nematic depressions below AuNP domains may be explained either by an increased size of the polymer-stabilized smectic layers close to the surface or by an increased number of polymer-stabilized smectic liquid crystal smectic layers close to the surface with respect to pure nematic films.

36 MATERIALS SCIENCE↗

NASA NTRS1987

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Vandersande, Jan W.↗

DOE OSTI2021

DAP: Cosmic Plastics D33/6120 vs. Sumitomo Bakelite 52-01

As soon as you lay eyes on the two data sheets for these materials, Cosmic D33/6120 and Sumitomo Bakelite 52-01, there are some pretty clear differences in mechanical, thermal, electrical, and physical properties. There are three distinct hypotheses relating to why the plastics are so distinctly different from one another: 1. unique composition; 2. different molding procedure; and 3. separate molding parameters A closer look into each of these hypotheses is necessary in explaining why the Sumitomo Bakelite and Cosmic DAPs are so different from one another.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Deep Learning At Depth: Estimating subsurface parameters from geophysical monitoring data

Geophysical imaging techniques are a non-invasive way to image the subsurface and understand both subsurface solid (rock/soil) and fluid property distributions and their evolution in time. Inversions of the geophysical data, such as Electrical Resistance Tomography (ERT) data, are solved to estimate the subsurface property distributions, such as conductivity, and many inversion techniques smooth out sharp gradients in rock or fluid property distributions. Sharp gradients in subsurface properties tend to be present in situations with complex subsurface structures, which are common in many subsurface applications. We have successfully demonstrated that it is possible to inform, or constrain, inversions with neural networks trained on synthetic data with complex subsurface structures. Initial results suggest this process may be optimizable to yield property distributions that better represent the true property distributions than the same inversion process without the neural network constraint. Future work would optimize the neural network performance for this application and then apply the synthetic-data trained neural network to real data to understand the utility and performance of this technique for real data sets.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Error-Field Penetration Thresholds in Ohmically Heated ITER and SPARC Plasmas

The critical n=1, n=2, and n=3 error-field amplitudes needed to trigger error-field penetration in ITER and SPARC, steady-state, ohmically heated plasmas are calculated using a standard asymptotic matching approach. The calculation incorporates plasma impurities, trapped particles, the bootstrap current, and neoclassical poloidal flow-damping. The energy confinement time is specified by the neo-Alcator scaling law in the low-density linear ohmic confinement (LOC) regime, and by the ITER-89P L-mode scaling law in the high-density saturated ohmic confinement regime (SOC) regime. The response of the plasma in the inner region is calculated using a linearized version of the four-field model. At the normal operating electron number density, diamagnetic levels of rotation are found to be sufficient to protect ITER and SPARC ohmically heated plasmas from m=2/n=1 error-field penetration. On other hand, SPARC, and especially ITER, ohmically heated plasmas may be vulnerable to n>1 error-field penetration. ITER and SPARC ohmically heated plasmas are also slightly more susceptible to error-field penetration when the electron fluid at the rational surface rotates in the ion diamagnetic direction, rather than the electron diamagnetic direction. At electron number densities that are sufficiently low that the plasma lies in the LOC confinement regime, the error-field penetration threshold increases with increasing density. However, as soon as the electron number density becomes large enough that the plasma enters the SOC regime, the increase in the error-field penetration threshold with increasing density levels off.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p + -GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm –2 and 100 A cm –2 , respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10 –4 Ω cm 2 at 5 kA cm –2 .

42 ENGINEERING↗

DOE OSTI2022

Suppression of ferromagnetism governed by a critical lattice parameter in CeTiGe 3 with hydrostatic pressure or V substitution

We combine structural and magnetic measurements to compare the different magnetic phase diagrams between the pressure and substitution studies in CeTiGe 3 . We report on the structural, magnetic, and electrical transport properties of single crystals of CeTi 1–x V x Ge 3 (x = 0, 0.1, 0.2, 0.3, 0.4, 0.9, and 1), and of polycrystalline samples (x = 0.5, 0.6, 0.7, 0.8), as well as structural properties of CeTiGe 3 under pressure up to 9 GPa. The ferromagnetic ordering in CeTiGe 3 is suppressed with V doping in CeTi 1–x V x Ge 3 , and suggests a possible ferromagnetic quantum critical point near x = 0.45. We perform a detailed crystalline electric field (CEF) analysis, and the magnetic susceptibility data in pure CeTiGe 3 and CeVGe 3 can be well explained by the CEF model. The proposed CEF energy levels suggest that there is a gradual change of the ground state from |±5/2 in CeTiGe 3 to |±1/2 in CeVGe 3 , and a suppression of CEF splitting energies near the quantum critical region. When hydrostatic pressure is used instead of chemical substitution, the quantum critical point is avoided by the appearance of magnetic phases above around 4.1 GPa. In the substitution study, the ferromagnetic and antiferromagnetic regions are well separated, whereas they touch in the pressure study. We observe a different trend in the temperature dependence of the resistivity maximum in both studies, suggesting that the CEF splitting energy is suppressed by V substitution but enhanced by pressure. Here, we also observe different responses in lattice constants between the two studies, highlighting the fact that substitution effects cannot be reduced to chemical pressure effects only. Nevertheless, when the magnetic phase diagrams of both hydrostatic pressure and substitution are compared, we find a common critical lattice constant c = 5.78 Å where the ferromagnetic ordering is suppressed in both studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1991

AMTEC cell testing, optimization of rhodium/tungsten electrodes, and tests of other components

Electrodes, current collectors, ceramic to metal braze seals, and metallic components exposed to the high 'hot side' temperatures and sodium liquid and vapor environment have been tested and evaluated in laboratory cells running for hundreds of hours at 1100-1200 K. Rhodium/tungsten electrodes have been selected as the optimum electrodes based on performance parameters and durability. Current collectors have been evaluated under simulated and actual operating conditions. The microscopic effects of metal migration between electrode and current collector alloys as well as their thermal and electrical properties determined the suitability of current collector and lead materials. Braze seals suitable for long term application to AMTEC devices are being developed.

Williams, Roger M.↗

NASA NTRS2006

Secondary Electron Emission and the Exploration of Space

The emission of secondary electrons from surfaces exposed to the space plasma and radiation environment is a process of great importance to space system engineering design and operations. A spacecraft will collect charge until it reaches an equilibrium potential gov,erned by the balance of incoming electron and ion currents from the space environment with outgoing secondary, backscattered, and photoelectron currents. Laboratory measurements of secondary electron yields are an important parameter for use in spacecraft charging analyses because the magnitude and sign of the equilibrium potential depends on both the energy spectrum of electrons and ions in the space environment and the electrical properties of the surface materials (including the energy dependent secondary electron yields). Typical benign equilibrium potentials range &om a few tens of volts positive in interplanetary space to a few volts negative in low Earth orbit. However, spacecraft are known to charge to negative potentials exceeding one to ten kilovolts in some environments and anomalies or system failures due to electrostatic discharges originating from highly charged surfaces becomes a serious concern. This presentation will provide a review of the spacecraft charging process with special emphasis on the role of secondary electrons in controlling the current balance process. Charging examples will include spacecraft in Earth orbit and interplanetary space as well as dust charging on the lunar surface, a phenomenon of importance to future lunar surface operations.

Minow, Joseph I.↗

NASA NTRS2010

NASA-DoD Lead-Free Electronics Project

Original Equipment Manufacturers (OEMs), depots, and support contract ors have to be prepared to deal with an electronics supply chain that increasingly provides parts with lead-free finishes, some labeled no differently and intermingled with their SnPb counterparts. Allowance of lead-free components presents one of the greatest risks to the r eliability of military and aerospace electronics. The introduction of components with lead-free terminations, termination finishes, or cir cuit boards presents a host of concerns to customers, suppliers, and maintainers of aerospace and military electronic systems such as: 1. Electrical shorting due to tin whiskers 2. Incompatibility of lead-f ree processes and parameters (including higher melting points of lead -free alloys) with other materials in the system 3. Unknown material properties and incompatibilities that could reduce solder joint reli ability As the transition to lead-free becomes a certain reality for military and aerospace applications, it will be critical to fully un derstand the implications of reworking lead-free assemblies.

Kessel, Kurt↗

NASA NTRS2011

NASA TEERM Hexavalent Chrome Alternatives Projects

The overall objective of the Hex Chrome Free Coatings for Electronics project is to evaluate and test pretreatment coating systems not containing hexavalent chrome in avionics and electronics housing applications. This objective will be accomplished by testing strong performing coating systems from prior NASA and DoD testing or new coating systems as determined by the stakeholders. The technical stakeholders have agreed that this protocol will focus specifically on Class 3 coatings. Original Equipment Manufacturers (OEMs), depots, and support contractors have to be prepared to deal with an electronics supply chain that increasingly provides parts with lead-free finishes, some labeled no differently and intermingled with their SnPb counterparts. Allowance of lead-free components presents one of the greatest risks to the reliability of military and aerospace electronics. The introduction of components with lead-free terminations, termination finishes, or circuit boards presents a host of concerns to customers, suppliers, and maintainers of aerospace and military electronic systems such as: 1. Electrical shorting due to tin whiskers 2. Incompatibility of lead-free processes and parameters (including higher melting points of lead-free alloys) with other materials in the system 3. Unknown material properties and incompatibilities that could reduce solder joint reliability

Kessel, Kurt R.↗