Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electron Transistor”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Accelerated Aging System for Prognostics of Power Semiconductor Devices

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Celaya, Jose R.↗
NASA NTRS2010

The Assurance Challenges of Advanced Packaging Technologies for Electronics

Advances in microelectronic parts performance are driving towards finer feature sizes, three-dimensional geometries and ever-increasing number of transistor equivalents that are resulting in increased die sizes and interconnection (I/O) counts. The resultant packaging necessary to provide assemble-ability, environmental protection, testability and interconnection to the circuit board for the active die creates major challenges, particularly for space applications, Traditionally, NASA has used hermetically packaged microcircuits whenever available but the new demands make hermetic packaging less and less practical at the same time as more and more expensive, Some part types of great interest to NASA designers are currently only available in non-hermetic packaging. It is a far more complex quality and reliability assurance challenge to gain confidence in the long-term survivability and effectiveness of nonhermetic packages than for hermetic ones. Although they may provide more rugged environmental protection than the familiar Plastic Encapsulated Microcircuits (PEMs), the non-hermetic Ceramic Column Grid Array (CCGA) packages that are the focus of this presentation present a unique combination of challenges to assessing their suitability for spaceflight use. The presentation will discuss the bases for these challenges, some examples of the techniques proposed to mitigate them and a proposed approach to a US MIL specification Class for non-hermetic microcircuits suitable for space application, Class Y, to be incorporated into M. IL-PRF-38535. It has recently emerged that some major packaging suppliers are offering hermetic area array packages that may offer alternatives to the nonhermetic CCGA styles but have also got their own inspectability and testability issues which will be briefly discussed in the presentation,

Sampson, Michael J.↗
NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗
NASA NTRS1991

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗
NASA NTRS1972

Reliability of hybrid microcircuit discrete components

Data accumulated during 4 years of research and evaluation of ceramic chip capacitors, ceramic carrier mounted active devices, beam-lead transistors, and chip resistors are presented. Life and temperature coefficient test data, and optical and scanning electron microscope photographs of device failures are presented and the failure modes are described. Particular interest is given to discrete component qualification, power burn-in, and procedures for testing and screening discrete components. Burn-in requirements and test data will be given in support of 100 percent burn-in policy on all NASA flight programs.

Allen, R. V.↗
NASA NTRS1972

Development of an image converter of radical design

A long term investigation of thin film sensors, monolithic photo-field effect transistors, and epitaxially diffused phototransistors and photodiodes to meet requirements to produce acceptable all solid state, electronically scanned imaging system, led to the production of an advanced engineering model camera which employs a 200,000 element phototransistor array (organized in a matrix of 400 rows by 500 columns) to secure resolution comparable to commercial television. The full investigation is described for the period July 1962 through July 1972, and covers the following broad topics in detail: (1) sensor monoliths; (2) fabrication technology; (3) functional theory; (4) system methodology; and (5) deployment profile. A summary of the work and conclusions are given, along with extensive schematic diagrams of the final solid state imaging system product.

Irwin, E. L.↗
NASA NTRS1988

Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

Experimental measurements are reported of the degradation effects of high-energy particles (heavy Br ions and electrons) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose vs particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log K1 intercepts.

Zoutendyk, John A.↗
NASA NTRS2013

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗
NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers

Novel translators and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. Furthermore, the ability to form devices on flexible substrates expands the range of applications where electronic circuitry can be introduced. For NASA, nonotechndogy offers opportunities for increased onboard data processing and thus autonomous decision-making ability, ad novel sensors that detect and respond to external stimuli with few oversight requirements. The goat of this work is to demonstrate transistor behavior in polyaniline/ polyethylene oxide nanofibers, thus creating a foundation for future logic devices.

Miranda, Felix A.↗
NASA NTRS1975

Reliability data for electronic and electromechanical components: A report

Ten classes of parts covered in report: capacitors, crystals, diodes, fuses, inductors, microcircuits, relays, fixed resistors, transformers, and transistors. Each class is contained in separate section and includes discussion of inherent failure modes, screening rationale, general screening requirements, derating criteria, and stress-analysis data.

Scott, W. R.↗
NASA NTRS1975

Electrical and electronic devices and components: A compilation

Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

Source record↗
NASA NTRS1978

The 30-cm ion thruster power processor

A power processor unit for powering and controlling the 30 cm Mercury Electron-Bombardment Ion Thruster was designed, fabricated, and tested. The unit uses a unique and highly efficient transistor bridge inverter power stage in its implementation. The system operated from a 200 to 400 V dc input power bus, provides 12 independently controllable and closely regulated dc power outputs, and has an overall power conditioning capacity of 3.5 kW. Protective circuitry was incorporated as an integral part of the design to assure failure-free operation during transient and steady-state load faults. The implemented unit demonstrated an electrical efficiency between 91.5 and 91.9 at its nominal rated load over the 200 to 400 V dc input bus range.

Herron, B. G.↗
NASA NTRS1988

Electrically-Isolating Analog Amplifier

Signals transmitted between units at different ground potentials. Analog amplifier electrically isolates input from output through use of optoelectronic components. Analog isolation amplifier uses dual-transistor optoisolator, preventing transmission of common-mode voltage from input to output. Circuit useful in spacecraft electronic systems.

Paulkovich, John↗
NASA NTRS1987

Electronically Tuned Microwave Oscillator

Features include low phase noise and frequency stability. Bias-tuned, low-phase-noise microwave oscillator circuit based on npn bipolar transistor and dielectric resonator. Operating at frequency of about 8.4 GHz, oscillator adjusted to give low phase noise, relatively flat power output versus frequency, and nearly linear frequency versus bias voltage.

Lakshminarayana, Mysore↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗