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NASA NTRS1985

Chemical structure of interfaces

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Grunthaner, F. J.↗

NASA NTRS1985

Vapor Growth of Alloy-Type Semiconductor Crystals

The present effort is part of a continuing research program directed towards the investigation of basic vapor transport phenomena and of crystal growth properties of electronic materials. The primary purpose of ground-based studies is the development and definition of optimum experimental parameters for flight experiments. The ground-based effort includes the investigation of gravity-driven convection effects on mass transport rates and on crystal morphology for different orientations of the density gradient with respect to the gravity vector, and as a function of pressure and of temperature. In addition to the experimental tasks, theoretical efforts involve the quantitative thermodynamic analysis of the systems under investigation, the computation of fluid dynamic parameters, and the consideration of other possible effects on fluid flow under vertical, stabilizing and microgravity conditions. The specific experiments to be performed in a microgravity environment include the investigation of vapor transport and crystal growth phenomena of the GeSe-Xenon system and of the mass flux and growth of bulk and layer-type crystals of Hg sub (1-x) Cd sub x Te using HgI as a transport agent.

Wiedemeier, H.↗

NASA NTRS1984

High-temperature thermoelectric energy conversion. II - Materials survey

The current status of materials research for high-temperature thermoelectric energy conversion is reviewed. Two general classes of materials show promise for high temperature figure of merit (Z) values, viz, the rare-earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare-earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.

Wood, C.↗

NASA NTRS1986

Strength and microstructure of Si3N4 sintered with ZrO2 additions

Densities greater than 99 percent of theoretical were obtained with stabilized ZrO2 additions to Si3N4. Material sintered at 2140 C under 2.5 MPa nitrogen overpressure with 3.8, 9.9, and 13.4 wt pct ZrO2 had a predominantaly equiaxed grain size ranging from 0.2 to 7.0 microns. At 1370 C, the latter composition exhibited a flexural strength of about 487 MPa, equal to that of a finer-grain-size, hot-pressed Si3N4 + ZrO2 material having excellent high-temperature static fatigue properties. Transmission electron microscopy of the sintered Si3N4 revealed a glassy grain-boundary phase at all three ZrO2 levels and partially crystalline triple points for the 9.9 and 13.4 wt pct ZrO2-containing materials. Slow crack growth was observed for 1370 C flexure tests and correlated with nonlinear load deflection traces for stresses greater than 503 MPa. The crystallization of the grain-boundary glass is insterpreted as beneficial to the attainment of high (1370 C) flexural strength.

Sanders, W. A.↗

NASA NTRS1988

Synthesis and characterization of high-T(sub c) screen-printed Y-Ba-Cu-O films on alumina

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, x-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c)(onset) approx 96 K, T(sub c)(zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Bansal, Narottam P.↗

NASA NTRS1987

Properties of low-energy electron precipitation in the cleft during periods of unusually high ambient electron temperatures

A recently developed automated fitting procedure for Dynamics Explorer 2 electron energy spectra represents each auroral electron spectrum as a superposition of several Maxwellian and several Gaussian components. The fitting parameters give a digital representation which uniquely describes each spectrum. It is shown that unusually high ambient electron temperatures (of the order of 10,000 K) in the cleft are strongly correlated with the intensity parameters of the lowest-temperature Maxwellian components of the precipitation. The collisional heat input into the ambient electrons by these Maxwellian components of the precipitation fluxes is shown to be more than an order of magnitude higher in the high-temperature storm time cases than it is in a control set of 'normal temperature' quiet time cases. The heating effect of the solar flux is shown to be nearly the same for both sets of cases. As a result it is concluded that electron precipitation is the chief mechanism responsible for those high ambient temperatures.

Fontheim, Ernest G.↗

NASA NTRS1987

High temperature thermoelectric energy conversion

The theory and current status of materials research for high-temperature thermoelectric energy conversion are reviewed. Semiconductors are shown to be the preferred class of materials for this application. Optimization of the figure of merit of both broadband and narrow-band semiconductors is discussed as a function of temperature. Phonon scattering mechanisms are discussed, and basic material guidelines are given for reduction of thermal conductivity. Two general classes of materials show promise for high temperature figure of merit (Z) values, namely the rare earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.

Wood, Charles↗

NASA NTRS1988

Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy

GaAS/AlGaAs heterostructures have been grown by molecular-beam epitaxy on GaAs substrates intentionally oriented (tilted) a few degrees (0-6.5) off the (001) plane towards either (111)A, (111)B, or (011). It was observed that the 4-K photoluminescence and low-field electron transport properties of these structures may be functions of the substrate tilt angle and tilt direction, depending on the concentration of impurities incorporated during growth. A substrate tilt during molecular-beam epitaxy is observed to have the largest effect on these properties when the background impurity concentration in the molecular-beam epitaxial machine is high. This supports the contention that the observed changes in material characteristics are due to differences in the incorporation of defects and impurities. The incorporation of defects and impurities are reduced by using substrates tilted toward (111)A, in comparison to nominally flat (001) substrates or substrates tilted toward (111)B.

Radulescu, D. C.↗

NASA NTRS1989

The behavior of beams of relativistic non-thermal electrons under the influence of collisions and synchrotron losses

For many astrophysical situations, such as in solar flares or cosmic gamma-ray bursts, continuum gamma rays with energies up to hundreds of MeV were observed, and can be interpreted to be due to bremsstrahlung radiation by relativistic electrons. The region of acceleration for these particles is not necessarily the same as the region in which the radiation is produced, and the effects of the transport of the electrons must be included in the general problem. Hence it is necessary to solve the kinetic equation for relativistic electrons, including all the interactions and loss mechanisms relevant at such energies. The resulting kinetic equation for non-thermal electrons, including the effects of Coulomb collisions and losses due to synchrotron emission, was solved analytically in some simple limiting cases, and numerically for the general cases including constant and varying background plasma density and magnetic field. New approximate analytic solutions are presented for collision dominated cases, for small pitch angles and all energies, synchrotron dominated cases, both steady-state and time dependent, for all pitch angles and energies, and for cases when both synchrotron and collisional energy losses are important, but for relativistic electrons. These analytic solutions are compared to the full numerical results in the proper limits. These results will be useful for calculation of spectra and angular distribution of the radiation (x rays, gamma-rays, and microwaves) emitted via synchrotron or bremsstrahlung processes by the electrons. These properties and their relevance to observations will be observed in subsequent papers.

Mctiernan, James M.↗

NASA NTRS1988

Synthesis and characterization of high-T(c) screen-printed Y-Ba-Cu-O films on alumina

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, X-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c) (onset) approx 96 KK, T(sub c) (zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Bansal, Narottam P.↗

NASA NTRS1990

The behavior of beams of relativistic nonthermal electrons under the influence of collisions and synchrotron losses

For many astrophysical situations, such as in solar flares or cosmic gamma-ray bursts, continuum gamma rays with energies up to hundreds of MeV were observed, and can be interpreted to be due to bremsstrahlung radiation by relativistic electrons. The region of acceleration for these particles is not necessarily the same as the region in which the radiation is produced, and the effects of the transport of the electrons must be included in the general problem. Hence it is necessary to solve the kinetic equation for relativistic electrons, including all the interactions and loss mechanisms relevant at such energies. The resulting kinetic equation for non-thermal electrons, including the effects of Coulomb collisions and losses due to synchrotron emission, was solved analytically in some simple limiting cases, and numerically for the general cases including constant and varying background plasma density and magnetic field. New approximate analytic solutions are presented for collision dominated cases, for small pitch angles and all energies, synchrotron dominated cases, both steady-state and time dependent, for all pitch angles and energies, and for cases when both synchrotron and collisional energy losses are important, but for relativistic electrons. These analytic solutions are compared to the full numerical results in the proper limits. These results will be useful for calculation of spectra and angular distribution of the radiation (X rays, gamma-rays, and microwaves) emitted via synchrotron or bremsstrahlung processes by the electrons. These properties and their relevance to observations will be observed in subsequent papers.

Mctiernan, James M.↗

NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗

NASA NTRS1995

Properties of the solar wind electrons between 1 and 3.3 AU from Ulysses thermal noise measurements

In order to describe the distribution function f(v) of the solar wind electrons, the simplest model which is commonly used consists of the sum of two Maxwellians representing two distinct populations: a core (density n(sub c), temperature T(sub c)) and a halo (density n(sub h), temperature T(sub h)). It is possible, with the latter assumptions on the electron f(v), to determine the quasi-thermal noise (QTN) induced on an antenna by the motion of the ambient electrons in the solar wind. Using this distribution and the spectroscopy of thermal noise measurements from the radio receiver on Ulysses in the ecliptic plane, we deduce the total electron density N(sub e), the core temperature T(sub c), and the core and halo kinetic pressures N(sub c)T(sub c) and N(sub h)T(sub h). From these electron parameters, we can define a 'global' electron temperature as T(sub e) = (N(sub c)T(sub c) + N(sub h)T(sub h))/N(sub e). Here we present different radial gradients of T(sub e), between 1 and 3.3 AU, as a function of three classes of N(sub e) at 1 AU: low, intermediate, and high densities. In general all these gradients are found to be positive with different polytrope power law indexes between N(sub e) and T(sub e), which are in general lower than unity. We also show different behaviors of the ratio N(sub h)T(sub h)/N(sub c)T(sub c) for each density class considered. Some possible interpretations for these observations are discussed.

Maksimovic, M.↗

NASA NTRS1999

High Resolution UV Emission Spectroscopy of Molecules Excited by Electron Impact

Photodissociation via discrete line absorption into predissociating Rydberg and valence states is the dominant destruction mechanism of CO and other molecules in the interstellar medium and molecular clouds. Accurate values for the rovibronic oscillator strengths of these transitions and predissociation yields of the excited states are required for input into the photochemical models that attempt to reproduce observed abundances. We report here on our latest experimental results of the electron collisional properties of CO and N2 obtained using the 3-meter high resolution single-scattering spectroscopic facility at JPL.

James, G. K.↗

NASA NTRS2002

Nanomanipulation and Lithography for Carbon Nanotube Based Nondestructive Evaluation Sensor Development

Carbon nanotubes (CNTs) offer great potential for advanced sensor development due to the unique electronic transport properties of the material. However, a significant obstacle to the realization of practical CNT devices is the formation of reliable and reproducible CNT to metallic contacts. In this work, scanning probe techniques are explored for both fabrication of metallic junctions and positioning of singlewalled CNTs across these junctions. The use of a haptic force feedback interface to a scanning probe microscope is used to enable movement of nanotubes over micron length scales with nanometer precision. In this case, imaging of the surface is performed with light or intermittent contact to the surface. Increased tip-to-sample interaction forces are then applied to either create junctions or position CNTs. The effect of functionalization of substrate surfaces on the movement and tribology of the materials is also studied. The application of these techniques to the fabrication of CNT-based sensors for nondestructive evaluation applications is discussed.

Wincheski, Buzz↗

NASA NTRS2003

Substitution Effects and Linear Free Energy Relationships During Reduction of 4- Benzoyl-n-(4-substituted Benzyl)pyridinium Cations

In analogy to 4-(para-substituted benzoyl)-N-methylpyridinium cations (1-X's), the title species (2-X's, -X = -OCH3, -CH3, -H, -Br, -COCH3, -NO2) undergo two reversible, well-separated (E(sub 1/2) greater than or equal to 650 mV) one-electron reductions. The effect of substitution on the reduction potentials of 2-X's is much weaker than the effect of the same substituents on 1-X's: the Hammett rho-values are 0.80 and 0.93 for the 1st- and 2nd-e reduction of 2-X's vs. 2.3 and 3.3 for the same reductions of 1-X's, respectively. Importantly, the nitro group of 2-NO2 undergoes reduction before the 2nd-e reduction of the 4-benzoylpyridinium system. These results suggest that the redox potentials of the 4-benzoylpyridinium system can be course-tuned via p-benzoyl substitution and fine-tuned via para-benzyl substitution. Introducing the recently derived substituent constant of the -NO2(sup)- group (sigma para-NO2(sup)- = -0.97) yields an excellent correlation for the 3rd-e reduction of 2- NO2 (corresponding to the reduction of the carbonyl group) with the 2nd-e reduction of the other 2-X's, and confirms the electron donating properties of -NO2(sup)-.

Leventis, Nicholas↗

NASA NTRS2010

Diffuse-Illumination Systems for Growing Plants

Agriculture in both terrestrial and space-controlled environments relies heavily on artificial illumination for efficient photosynthesis. Plant-growth illumination systems require high photon flux in the spectral range corresponding with plant photosynthetic active radiation (PAR) (400 700 nm), high spatial uniformity to promote uniform growth, and high energy efficiency to minimize electricity usage. The proposed plant-growth system takes advantage of the highly diffuse reflective surfaces on the interior of a sphere, hemisphere, or other nearly enclosed structure that is coated with highly reflective materials. This type of surface and structure uniformly mixes discrete light sources to produce highly uniform illumination. Multiple reflections from within the domelike structures are exploited to obtain diffuse illumination, which promotes the efficient reuse of photons that have not yet been absorbed by plants. The highly reflective surfaces encourage only the plant tissue (placed inside the sphere or enclosure) to absorb the light. Discrete light sources, such as light emitting diodes (LEDs), are typically used because of their high efficiency, wavelength selection, and electronically dimmable properties. The light sources are arranged to minimize shadowing and to improve uniformity. Different wavelengths of LEDs (typically blue, green, and red) are used for photosynthesis. Wavelengths outside the PAR range can be added for plant diagnostics or for growth regulation

May, George↗

NASA NTRS2007

Photonic Bandgap (PBG) Shielding Technology

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Bastin, Gary L.↗