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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS1991

Effects of space environment on space-based radar phased-array antenna: Status and preliminary observations

The overall objective is to evaluate the effect of the space environment on Kapton films considered for the Grumman space based radar (SBR) phased-array antenna. The most striking result is the overall good condition of the Kapton antenna planes and Kapton tensile specimens. This is largely attributable to the orientation of the Kapton (parallel and flush on the space end) and the stability of the LDEF in orbit. Results on elongation and mechanical properties of the plain and fiberglass reinforced Kapton will be described. Stress-dependent permanent deformation and some reductions in strain to failure were observed. Physical property testing of the materials is in progress. Electronic data acquisition and memory systems appeared to operate correctly, but functional tests were not yet performed. An evaluation of the high voltage-plasma interaction data is underway. Some minor systems anomalies (e.g., fastener sheared during removal, strong odor inside electronics container) were noted. Other observations such as radiation, contamination, impacts, and orientation features of atomic oxygen erosion are reported.

Whiteside, J. B.↗
NASA NTRS2005

Feasibility Study of a Nuclear-Stirling Plant for the Jupiter Icy Moons Orbiter

NASA is undertaking the design of a new spacecraft to explore the planet Jupiter and its three moons Calisto, Ganymede and Europa. This proposed mission, known as Jupiter Icy Moons Orbiter (JIMO) would use a nuclear reactor and an associated electrical generation system (Reactor Power Plant-RPP) to provide power to the spacecraft. The JIMO spacecraft is envisioned to use this power for science and communications as well as Electric Propulsion (EP). Among other potential power-generating concepts, previous studies have considered Thermoelectric and Brayton Power conversion systems, coupled to a liquid metal reactor for the JIMO mission. This paper will explore trades in system mass and radiator area for a nuclear reactor power conversion system, however this study will focus on Stirling power conversion. The Stirling convertor modeled in this study is based upon the Component Test Power Convertor design that was designed and operated successfully under the Civil Space Technology Initiative for use with the SP-100 nuclear reactor i the 1980's and early 1990's. The study design is such that two of the four convertors would operate at any time to generate the 100 kWe while the others are held in reserve. For this study the Stirling convertors hot-side temperature is 1050 K, would operate at a temperature ratio of 2.4 for a minimum mass system and would have a system efficiency of 29%. The Stirling convertor would generate high voltage (400 volt), 100 Hz single phase AC that is supplied to the Power Management and Distribution system. The waste hear is removed from the Stirling convertors by a flowing liquid sodium-potassium eutectic and then rejected by a shared radiator. The radiator consists of two coplanar wings, which would be deployed after the reactor is in space. System trades were performed to vary cycle state point temperatures and convertor design as well as power output. Other redundancy combinations were considered to understand the affects of convertor size and number of spares to the system mass.

Schmitz, Paul C.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1976

System Design for a Nuclear Electric Spacecraft Utilizing Out-of-core Thermionic Conversion

Basic guidelines are presented for a nuclear space power system which utilizes heat pipes to transport thermal power from a fast nuclear reactor to an out of core thermionic converter array. Design parameters are discussed for the nuclear reactor, heat pipes, thermionic converters, shields (neutron and gamma), waste heat rejection systems, and the electrical bus bar-cable system required to transport the high current/low voltage power to the processing equipment. Dimensions are compatible with shuttle payload bay constraints.

Estabrook, W. C.↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS2006

Standard for Solar Array Arc-Prevention in LEO - NASA 4005

Spacecraft charging in Low Earth Orbit (LEO) is commonly caused by the high voltage (>55 V) solar array power system. Conversely, arcing on the solar arrays is an undesirable consequence of the spacecraft charging. The new NASA Low Earth Orbit Spacecraft Charging Design Standard and Information Handbook (NASA-4005) presents a standard and all the necessary background information to understand how to eliminate solar array arcing on LEO spacecraft in the design stage, before the spacecraft is built, and before costly retrofits are needed.

Ferguson, Dale C.↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1992

Electro-Optical High-Voltage Sensors

Electro-optical sensors for measuring high voltages developed for use in automatically controlled power-distribution systems. Sensors connected to optoelectronic interrogating equipment by optical fibers. Because sensitive material and optical fibers are all dielectric, no problem in electrically isolating interrogating circuitry from high voltage, and no need for voltage dividers. Sensor signals transmitted along fibers immune to electromagnetic noise at radio and lower frequencies.

Gottsche, Allan↗
NASA NTRS1986

High voltage characteristics of the electrodynamic tether and the generation of power and propulsion

The Tethered Satellite System (TSS) will deploy and retrieve a satellite from the Space Shuttle orbiter with a tether of up to 100 km in length attached between the satellite and the orbiter. The characteristics of the TSS which are related to high voltages, electrical currents, energy storage, power, and the generation of plasma waves are described. A number of specific features of the tether system of importance in assessing the operational characteristics of the electrodynamic TSS are identified.

Williamson, P. R.↗
NASA NTRS1988

Design guide: Designing and building high voltage power supplies, volume 2

This report contains an accumulation of publications and analyses aimed at developing guidelines for improving both high voltage and low voltage power supplies for the U.S. Air Force systems command. It is the intent of the report to supply good design and manufacturing techniques for the packaging and the building of high quality, reliable, long-life power supplies. These data are based on the wealth of engineering practices established by design and manufacturing engineers. The contents are: Fundamentals of Insulation: Gases, Liquid Dielectrics, Solid Insulation; Environment: Pressure, Particulates, Environmental Interactions with Space Power Systems, Surface Charging, System Design Criteria; Configuration and Design Data: Designs, Transients, Grounding and Bonding, Thermal Control; Materials and Processes: Insulation, Processes, Process Variables; Manufacturing: Yield, Government and Industrial Survey, Analysis, Problem Areas and Suggested Solutions, Designs That Have Worked in High Voltage Equipment, Manufacturing Summary; and Tests: Performance, Insulation Tests, Materials Testing, Component and Equipment Tests, Performance Testing, Facility and Environment, Accelerated Life Test; Maintenance and Repair: Maintenance, Test Sets, Pilots and Crewmen, Air Logistic Centers, Design Problem Recommendations.

W G Dunbar↗
NASA NTRS1994

Automated System Tests High-Power MOSFET's

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Huston, Steven W.↗
NASA NTRS2010

Investigating Premature Ignition of Thruster Pressure Cartridges by Vibration-Induced Electrostatic Discharge

Pyrotechnic thruster pressure cartridges (TPCs) are used for aeroshell separation on a new NASA crew launch vehicle. Nondestructive evaluation (NDE) during TPC acceptance testing indicated that internal assemblies moved during shock and vibration testing due to an internal bond anomaly. This caused concerns that the launch environment might produce the same movement and release propellant grains that might be prematurely ignited through impact or through electrostatic discharge (ESD) as grains vibrated against internal surfaces. Since a new lot could not be fabricated in time, a determination had to be made as to whether the lot was acceptable to fly. This paper discusses the ESD evaluation and a separate paper addresses the impact problem. A challenge to straight forward assessment existed due to the unavailability of triboelectric data characterizing the static charging characteristics of the propellants within the TPC. The approach examined the physical limitations for charge buildup within the TPC system geometry and evaluated it for discharge under simulated vibrations used to qualify components for launch. A facsimile TPC was fabricated using SS 301 for the case and surrogate worst case materials for the propellants based on triboelectric data. System discharge behavior was evaluated by applying high voltage to the point of discharge in air and by placing worst case charge accumulations within the facsimile TPC and forcing discharge. The facsimile TPC contained simulated propellant grains and lycopodium, a well characterized indicator for static discharge in dust explosions, and was subjected to accelerations equivalent to the maximum accelerations possible during launch. The magnitude of charge generated within the facsimile TPC system was demonstrated to lie in a range of 100 to 10,000 times smaller than the spark energies measured to ignite propellant grains in industry standard discharge tests. The test apparatus, methodology, and results are described in this paper.

Woods, Stephen S.↗
NASA NTRS2006

A Novel Concept for a Deformable Membrane Mirror for Correction of Large Amplitude Aberrations

Very large, light weight mirrors are being developed for applications in space. Due to launch mass and volume restrictions these mirrors will need to be much more flexible than traditional optics. The use of primary mirrors with these characteristics will lead to requirements for adaptive optics capable of correcting wave front errors with large amplitude relatively low spatial frequency aberrations. The use of low modulus membrane mirrors actuated with electrostatic attraction forces is a potential solution for this application. Several different electrostatic membrane mirrors are now available commercially. However, as the dynamic range requirement of the adaptive mirror is increased the separation distance between the membrane and the electrodes must increase to accommodate the required face sheet deformations. The actuation force applied to the mirror decreases inversely proportional to the square of the separation distance; thus for large dynamic ranges the voltage requirement can rapidly increase into the high voltage regime. Experimentation with mirrors operating in the KV range has shown that at the higher voltages a serious problem with electrostatic field cross coupling between actuators can occur. Voltage changes on individual actuators affect the voltage of other actuators making the system very difficult to control. A novel solution has been proposed that combines high voltage electrodes with mechanical actuation to overcome this problem. In this design an array of electrodes are mounted to a backing structure via light weight large dynamic range flextensional actuators. With this design the control input becomes the separation distance between the electrode and the mirror. The voltage on each of the actuators is set to a uniform relatively high voltage, thus the problem of cross talk between actuators is avoided and the favorable distributed load characteristic of electrostatic actuation is retained. Initial testing and modeling of this concept demonstrates that this is an attractive concept for increasing the dynamic range capability of electrostatic deformable mirrors.

Moore, Jim↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗