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Stress intensities calculated in bending and tension. Finite-element stress-analysis method gives stress-intensity estimates for surface flaws on smooth and threaded round bars. Calculations done for purely tensile and purely bending loads. Results, presented in dimensionless form, useful for determining fatigue lives of bolts and pins.
PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.
Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.
Multi-pinned-phase (MPP) technology allows charge-coupled device (CCD) to operate totally inverted during both integration and readout while maintaining other performance characteristics. MPP-CCD made with positive doping implants defining barrier phases. When all phases biased together into inversion, dark current reduced, and potential of charge-collecting wells is difference between potentials of barrier and collection phases. Advantages include complete elimination of residual image effects during integration and readout, low pixel nonuniformity, and increase in quantum efficiency in near infrared because higher operating temperatures used. More tolerant to ionizing radiation environments.
A novel CCD technology, open pinned-phase (OPP) technology, is presented. Particular attention is given to the design and process features of an OPP-CCD that unite multi- and virtual-phase technologies. It is found that the OPP/CCD will produce a modest short-wavelength QE and excellent charge collection efficiency characteristics which are similar to those of the virtual-phase CCD. However, expensive processes related to thinning, backside accumulation, and packaging are not required in the present case.
Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.
Acceptable quantum efficiency obtained without back illumination and back-side thinning. NEW CCD technology referred to as "open-pinned-phase" (OPP) invented to unite best attributes of multiphase and virtual-phase technologies. Delivers high front-side sensitivity in conjunction with ultralow-signal-level performance.
Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.
Magnetically operated holding plate and ball-locking-pin mechanism part of object attached to, or detached from second object. Mechanism includes tubular housing inserted in hole in second object. Plunger moves inside tube forcing balls to protrude from sides. Balls prevent tube from sliding out of second object. Simpler, less expensive than motorized latches; suitable for robotics applications.
A three dimensional stress concentration analysis was conducted on straight shank and countersunk (rivet) holes in a large plate subjected to various loading conditions. Three dimensional finite element analysis were performed with 20 node isoparametric elements. The plate material was assumed to be linear elastic and isotropic, with a Poisson ratio of 0.3. Stress concentration along the bore of the hole were computed for several ratios of hole radius to plate thickness (0.1 to 2.5) and ratios of countersink depth to plate thickness (0.25 to 1). The countersink angles were varied from 80 to 100 degrees in some typical cases, but the angle was held constant at 100 degrees for most cases. For straight shank holes, three types of loading were considered: remote tension, remote bending, and wedge loading in the hole. Results for remote tension and wedge loading were used to estimate stress concentration for simulated rivet in pin loading. For countersunk holes only remote tension and bending were considered. Based on the finite element results, stress concentration equations were developed. Whenever possible, the present results were compared with other numerical solutions and experimental results from the literature.
A pinned photodiode/interline CCD Detector Array is under development for the EOS/MODIS-T project. Outstanding features of the device include large pixels, spectrally optimized fill factors, and blooming protection. The detector has 30 spatial rows and 32 spectral columns. The device layout is split into two halves; each half has its own detector area, storage area, and output structure.
The X-38 is a technology demonstration project for the proposed International Space Station Crew Return Vehicle. The project consists of several atmospheric flight vehicles and an unmanned spacecraft. This paper will discuss the design, development, and testing of a Retractable Trunnion Pin Mechanism used to mount the spacecraft in the payload bay of the space shuttle orbiter for launch.
Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.
Treatment of neurological anomalies, places stringent demands on device functionality and size. A micro-spectrometer has been developed for use as an implantable neural probe to monitor neuro-chemistry in synapses. The microspectrometer, based on a NASA-invented miniature Fresnel grating, is capable of differentiating the emission spectra from various brain tissues. The micro-spectrometer meets the size requirements, and is able to probe the neuro-chemistry and suppression voltage typically associated with a neural anomaly. This neural probe-pin device (PPD) is equipped with wireless power technology (WPT) enabling operation in a continuous manner without requiring an implanted battery. The implanted neural PPD, together with a neural electronics interface and WPT, allow real-time measurement and control/feedback for remediation of neural anomalies. The design and performance of the combined PPD/WPT device for monitoring dopamine in a rat brain will be presented to demonstrate the current level of development. Future work on this device will involve the addition of an embedded expert system capable of performing semi-autonomous management of neural functions through a routine of sensing, processing, and control.
A novel pin on disc tribometer was designed and constructed to generate a high-speed, wear coefficient database for hydrodynamic bearings that are typically used in canned motors found in the active thermal control circuits of robotic and inhabited spacecraft. The primary motivation for this work was the premature failure of the active external thermal control pump on the International Space Station in 2010. During the failure investigation of this incident, the root cause was postulated to be high speed wear of the bearings. Although a detailed forensic analysis gave credibility to this theory, the lack of wear coefficient data at relevant conditions prevented validation of this finding. The database generated from the new Extreme Environment Tribometer (EET) enabled a closure calculation within 5% of the observed wear from inspections of the failed hardware. Testing in anhydrous ammonia and surrogate fluid was performed to provide a means for simplified testing in the future and to populate a preliminary database for the design of future active thermal control systems on spacecraft. The EET and test techniques developed for the measurement of high-speed wear coefficients are available to future system designers.
Concepts for on-orbit capture and orientation of a Mars orbiting sample container (OS) using flux pinning were developed as candidate technologies for potential Mars Sample Return (MSR). The systems consist of a set of type-II superconductors field cooled below their critical temperature using a cryocooler, and operate on an orbiting sample container with a series of permanent magnets spaced around the exterior, along with an integrated layer of shielding to preserve the magnetic properties of the returned samples. Benefits of the approaches include passive, non-contact capture and orientation, as well as a reduction in the number of actuators relative to various mechanical methods.