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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
NASA NTRS1995

Correcting For Capacitance In Tests Of Solar Cells

Modified procedure for testing solar photovoltaic cells and modified software for processing test data provide corrections for effects of cell capacitance. Procedure and software needed because (a) some photovoltaic devices (for example, silicon solar cells with back-surface field region) store minority charge carriers in cell junction and thus exhibit significant capacitance, (b) capacitance affects current-vs.-voltage (I-V) measurements made when transient load connected to cell, and (c) transient load used in unmodified version of test procedure. Corrected I-V curve obtained in test of solar cell according to modified procedure approximates true cell voltage vs. cell current more closely.

Mueller, Robert L.↗
NASA NTRS1977

The sawtooth cover slide

A novel cover slide is reported which increases solar cell output by reducing the reflection of light from the cover slide surface and by redirecting incident light so that none falls on the collection grids of the cell. The new cover slide is fabricated with a sawtooth surface having a periodicity equal to that of the solar cell grids. This configuration refracts the light so that it is directed onto the semiconductor surface between the grid lines. Conventional grid patterns obstruct 7-10 percent of the light incident on the cell; at least half of this loss has been recovered by using the sawtooth cover slide. In addition, surface reflection from the conventional coated cover slide is suppressed by presenting a second surface to any light reflected at the first plane of contact. This double reflection results in a greater reduction of the reflection loss from the cover slide than does an antireflection coating on a flat surface.

Meulenberg, A., Jr.↗
DOE OSTI2022

Stability-limiting heterointerfaces of perovskite photovoltaics

Optoelectronic devices consist of heterointerfaces formed between dissimilar semiconducting materials. The relative energy level alignment between contacting semiconductors determinately affects the heterointerface charge injection and extraction dynamics. For perovskite solar cells (PSCs), the heterointerface between the top perovskite surface and a charge-transporting material (CTM) is often treated for defect passivation to improve PSC stability and performance. However, such surface treatments could also affect the heterointerface energetics. Here we show that surface treatments may induce a negative work function shift (i.e. more n-type), which activates halide migration to aggravate PSC instability. Therefore, despite the beneficial effects of surface passivation, this detrimental side effect limits the maximum stability improvement attainable for PSCs treated in these ways. Furthermore, this trade-off between the beneficial and detrimental effects should guide further work on improving PSC stability via surface treatments.

14 SOLAR ENERGY↗
DOE OSTI2021

Molecular dopants: Tools to control the electronic structure of metal halide perovskite interfaces

In the standard configurations of metal halide perovskite solar cell, the active layer, or absorber, follows a p-i-n or n-i-p electronic structure that is designed to enhance the separation and extraction of photo-induced charge carriers. The control of the Fermi level position across the film, between electron and hole transport layers, is therefore of paramount importance. Direct localized doping in metal halide perovskites being still elusive, the design of n-i-p and p-i-n structures has so far relied predominantly on surface and interface doping of the perovskite as well as on the control of the work function of the substrate and transport layers on which, or between which, the absorber is being placed. We provide here a short review of that work, emphasizing the fundamental studies of electronic structure performed on systems modified with organic molecular dopants. The review starts with a justification for the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We then review work done on the deposition of molecular oxidants and reductants on perovskite surfaces, including the mitigation of the surface states, and the impact of these dopants on energy level alignment with substrate and charge transport layers. The second part of the review focuses on the use of molecular dopants to either modify the work function of electron or hole transport layers to establish the boundary conditions for a p-i-n or n-i-p structure, or to enhance the conductivity of these layers in order to facilitate charge carrier extraction. Final considerations are also given on recent work on bulk doping of the perovskite layer with molecular dopants.

14 SOLAR ENERGY↗
NASA NTRS1978

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

Rhee, S. S.↗
NASA NTRS1988

Analytical determination of critical crack size in solar cells

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

Chen, C. P.↗
DOE OSTI2026

Understanding Photovoltage Deficits in Electrochemically Grown Tin Sulfide (SnS) Thin-Film Photovoltaic Devices

Tin­(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.

deposition↗
NASA NTRS2010

Micrometeoroid Impacts and Optical Surface Scatter in Space Environment

This presentation will discuss the results of an attempt to use laboratory test data and empirically derived models to quantify the degree of surface damage and associated light scattering that might be expected from hypervelocity particle impacts in space environment. Micrometeoroid sizes are predicted to be predominantly in the mass range 10(exp -5) g or less, with most having diameters near 1 micrometer, but some larger than 120 micrometers, with velocities near 20 km/s. In a laboratory test, latex (p = 1.1 g/cu cm) and iron (7.9 g/cu cm) particles with sizes ranging from 0.75 micrometer to 1.60 micrometer and with velocities ranging from 2.0 km/s to 18.5 km/s, were shot at a dielectric coated gold mirror. Scanning electron and atomic force microscopy were used to measure crater dimensions that were then associated with particle impact energies. These data were then fitted to empirical models derived from solar cell and other spacecraft surface components returned from orbit, as well as studies of impact craters studied on glassy materials returned from the lunar surface, to establish a link between particle energy and impact crater dimension. Published estimates of the Martian and Saturnian meteoroid environments were used as the sources of particle flux estimates. From these data, an estimate of total expected damaged area was computed and this result produced an estimate of expected surface scatter from the modeled environment.

Heaney, James B.↗
NASA NTRS1989

Concepts for thin-film GaAs concentrator cells

The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

Spitzer, M. B.↗
NASA NTRS1983

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗
DOE OSTI2019

The role of titanium-oxo clusters in the sulfate process for TiO 2 production

TiO 2 is manufactured for white pigments, solar cells, self-cleaning surfaces and devices, and other photocatalytic applications. The industrial synthesis of TiO 2 entails: (1) the dissolution of ilmenite ore (FeTiO 3 ) in aqueous sulfuric acid which precipitates the Fe while retaining the Ti in solution, followed by (2) dilution or heating the Ti sulfate solution to precipitate the pure form of TiO 2 . The underlying chemistry of these processing steps remains poorly understood. Here we show that the dissolution of a simple Ti IV -sulfate salt, representative of the industrial sulfate process for the production of TiO 2 , immediately self-assembles into a soluble Ti-octadecameric cluster, denoted as {Ti 18 }. We observed {Ti 18 } in solution by small-angle X-ray scattering and Ti extended X-ray absorption fine structure (Ti-EXAFS) analysis, and ultimately crystallized it for absolute identification. The {Ti 18 } metal-oxo cluster was previously reported as a polycation; but shown here, it can also be a polyanion, dependent on the number of sulfate ligands it carries. After immediate self-assembly, the {Ti 18 }-cluster persists until TiO 2 precipitates, with no easily identified structural intermediates in the solution or solid state, despite the fact that the atomic arrangement of {Ti 18 } differs vastly from that of titania. The evolution from solution phase {Ti 18 } to precipitated TiO 2 nanoparticles was detailed by X-ray scattering and Ti-EXAFS. Here, we offer a hypothesis for the key mechanism of complete separation of Fe from Ti in the industrial sulfate process. These findings also highlight the emerging importance of the unusual Ti(Ti) 5 pentagonal building unit, featured in {Ti 18 } as well as other early d 0 transition metal-oxo clusters including Nb, Mo and W. Finally, this study presents an example of crystal growth mechanisms in which the observed “pre-nucleation cluster” does not necessarily predicate the structure of the precipitated solid.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1981

Diagnostic study of BSF silicon solar cells

Solar cells equipped with back surface fields (BSF) were fabricated by means of an aluminum alloy, boron diffusion, and boron ion implantation. The importance of initial thickness, resistivity, orientation, and the crystal growth method were examined. Aluminum in paste form was screen printed on the cell, followed by alloy formation at 800 C for a minute. Application of the BSFs resulted in open circuit voltage improvements dependent on the substrate resistivity, ranging from 10 mV at 0.3 ohm-cm to 50 mV at 15 ohm-cm. The gains in performance were attributed to a longer penetration depth, a heightened concentration profile at the interface, and higher concentrations in the p+ layer.

Yoo, H.↗
NASA NTRS1982

New component development for multi-100 kW low-cost solar array applications

Studies of the cost and performance of flexible arrays have shown that the most dramatic reductions in the $/Watt figure of merit are achieved by increasing performance. An examination of those properties that contribute to array performance indicated areas where radical changes in current design practice and philosophy would result in significant cost and performance impacts. To take advantage of the predicted cost reductions, modules were fabricated and tested that had ultra-thin superstrates as a load carrying member and large area dielectric wraparound (DWA), gridded back surface and copper contacted solar cells.

Pack, G. J.↗
NASA NTRS1988

Assessment of the effects of space debris and meteoroids environment on the space station solar array assembly

The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the Space Station solar array assembly. Starting with the space debris and meteoroids flux models, the projected surface area of the solar cell string circuit of the solar array panel and the mast longeron, and the design lifetime, the possibility of no impact on the solar array mast and solar cell string circuits was determined as a function of particle size. The probability of no impact on the cell string circuits was used to derive the probability of no open circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime was then calculated as a function of impacting particle size. Coupled with a penetration and damage models/correlations which relate the particle size to the penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the lower power requirement given a degree of redundancy, and the probability of no impact on the solar array mast.

Nahra, Henry K.↗