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At least 289 records · Page 16

ESCA study of several fluorocarbon polymers exposed to atomic oxygen in low earth orbit or within or downstream from a radio-frequency oxygen plasma

The ESCA (electron spectroscopy for chemical analysis) spectra of films of Tedlar, tetrafluoroethylene-hexafluoropropylene copolymer (in the form of a Teflon FEP coating on Kapton H, i.e., Kapton F), and polytetrafluoroethylene (Teflon or Teflon TFE), exposed to atomic oxygen O(3P) either in LEO on the STS-8 Space Shuttle or within or downstream from a radio-frequency oxygen plasma, were compared. The major difference in surface chemistry of Tedlar induced by the various exposures to O(3P) was a much larger uptake of oxygen when etched either in or out of the glow of an O2 plasma than when etched in LEO. In contrast, Kapton F exhibited very little surface oxidation during any of the three different exposures to O(3P), while Teflon was scarcely oxidized.

Golub, Morton A.↗

Enhancing Adhesion: Relative Merits of Different Approaches

Adhesive performance is improved mainly by manipulation of the bimaterials interface zone, which is only a few molecules thick. There are three approaches to enhancement of interfacial adhesion at the molecular level. They are 1) changing the nonchemically bonded interactions across the interface from weak ones to strong ones, 2) making the true interfacial area much larger than the simple geometric area, and 3) inducing chemical bonding between the two materials forming the interface. Our goal this summer was to question some of the built-in assumptions contained within these approaches and to determine the most promising approach, both theoretically and practically, for enhancing adhesion in NASA structures. Our computations revealed that all three of these approaches have, in theory, the potential to enhance molecular adhesion approximately ten-fold. Experiments, however, revealed that this excellent level of enhancement is not likely to be reached in practice. Each approach was found to be severely limited by practical problems. In addition, some of the built-in assumptions associated with these approaches were found to be insufficient or inadequate. The first approach, changing the nonchemically bonded interactions from weak to strong, Is an example of one containing inadequate assumptions. The extensive literature on intermolecular interactions, based on solution studies, shows that certain functional group pairs interact much more strongly than others. It has always been assumed that these data can be reliably extended to systems where only one member of the pair is in solution and the other Is contained in a solid surface. Our experiments this summer demonstrated that solution data do not adequately predict the strength of functional group interaction at the solid-liquid interface. Furthermore, the strong solvents needed to dissolve the monomers or polymers to which the functional groups of interest are attached compete successfully with the solid surface for the functional group. As a result, functional groups in solution cannot pair with the complementary groups in the solid surface, and the expected enhancement of nonchemically bonded interactions is not realized. The second approach, increasing the true interfacial area, is an example of one containing inadequate assumptions and suffering from numerous practical problems. First, practitioners have assumed that material removal, such as bead blasting or etching, increases true surface area (and therefore interfacial area) in a meaningful way. Our geometric analysis demonstrated that removal methods increase area by a factor of two at most. To increase interfacial area by an order of magnitude or more. a thin layer of high porosity must be added to the substrate surface prior to application of the adhesive phase. Consistent with this finding, we attempted to create a thin layer of rigid, highly porous glass on the surface of our smooth glass substrate by means of sol-gel technology. We were unable to surmount a wide variety of practical problems and obtained only collapsed, nonporous layers. Thus this approach, appealing in principle, would require long term development and is not promising in the near term. The third approach, inducing chemical bonding at the interface, is an example of one having neither inadequate assumptions nor insurmountable practical problems. When silicate glass is the substrate, there are only a few chemical reactions that can be successfully conducted to create these chemical bonds, and these reactions usually involve silicon-containing reagents. We compared the silazane reagents to the silane reagents and found through experiment that the silazanes react with the glass surface much more readily, and under milder conditions, than the silanes. The functional groups attached to the glass surface by silazane reactions were not able to be removed by solvent extraction, elevated temperature exposure, or mechanical action. This clearly indicates that the formation of chemical bonds at the interface is the most effective approach for enhancing molecular adhesion.

Penn, L. S.↗

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael↗

Transmission Electron Microscopy of Non-Etched Presolar Silicon Carbide

Our solar system formed from nuclei produced in earlier generations of stars. Mixing in the proto-solar nebula isotopically homogenized most of this material, but some grains, called presolar grains, retain their original isotopic composition. The isotopic properties of presolar SiC grains indicate that most of the grains formed in the outflows of carbon-rich Asymptotic Giant Branch (AGB) stars. The microstructure of these presolar grains reflects the conditions of the dust formation and subsequent alteration. Early microstructural studies of SiC grains obtained by acid dissolution from meteorites show that most isotopically anomalous SiC grains have the face-centered cubic b- SiC structure. However, Daulton et al. have shown that a small fraction of sub-micron presolar SiC grains are of the hexagonal 2H polytype (a-SiC). Although the harsh chemical treatments of these grains does not alter their crystal structure, significant alteration of the surface morphology of the grains due to the acid treatments has been observed. In addition, the acid treatments may preferentially remove cracked or fissured grains, and possible sub-grains, such as graphite. By studying SiC grains isolated by physical separation and found in situ, we attempt to obtain a more complete analysis of presolar SiC microstructures, including the surface morphology, in order to address the formation and processing history of the grains. In our prior work, we reported on one in situ SiC grain (hereafter CBIS1). Here we present results from two additional grains, one in situ, and one prepared as a physical separate.

Stroud, Rhonda M.↗

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗

Chemical structure of interfaces

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Grunthaner, F. J.↗

Surface analysis of space telescope material specimens

Surface analysis by electron spectroscopy for chemical analysis (ESCA) was used to characterize a number of the material samples for the space telescope. With ESCA, the sample is irradiated with monoenergetic soft X-rays and the resulting emitted electrons are energy analyzed to determine the binding energy of electrons to the surface atoms. The major peaks were used in the quantitative determination of the surface composition. The presence of trace elements (impurities below 1% atomic composition) was also detailed. Initially a survey scan was run for each sample to deduce the elemental composition. Then the major peaks of interest and those of the trace elements were individually examined. After this, the samples were argon sputtered to etch away surface layers, and then additional measurements were carried out in order to obtain depth profile information. In this way it was possible for those species present only on the surface to be distinguished from those having a significant depth distribution within the sample.

Fromhold, A. T.↗

Tensile Behavior of Al2o3/feal + B and Al2o3/fecraly Composites

The feasibility of Al2O3/FeAl + B and Al2O3/FeCrAlY composites for high-temperature applications was assessed. The major emphasis was on tensile behavior of both the monolithics and composites from 298 to 1100 K. However, the study also included determining the chemical compatibility of the composites, measuring the interfacial shear strengths, and investigating the effect of processing on the strength of the single-crystal Al2O3 fibers. The interfacial shear strengths were low for Al203/FeAl + B and moderate to high for Al203/FeCrAlY. The difference in interfacial bond strengths between the two systems affected the tensile behavior of the composites. The strength of the Al203 fiber was significantly degraded after composite processing for both composite systems and resulted in poor composite tensile properties. The ultimate tensile strength (UTS) values of the composites could generally be predicted with either rule of mixtures (ROM) calculations or existing models when using the strength of the etched-out fiber. The Al2O3/FeAl + B composite system was determined to be unfeasible due to poor interfacial shear strengths and a large mismatch in coefficient of thermal expansion (CTE). Development of the Al2O3/FeCrAlY system would require an effective diffusion barrier to minimize the fiber strength degradation during processing and elevated temperature service.

Draper, S. L.↗

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael H.-C.↗

Interaction of gases with lunar materials

The surface properties of lunar fines were investigated. Results indicate that, for the most part, these properties are independent of the chemical composition and location of the samples on the lunar surface. The leaching of channels and pores by adsorbed water vapor is a distinguishing feature of their surface chemistry. The elements of air, if adsorbed in conjunction with water vapor or liquid water, severely impedes the leaching process. In the absence of air, liquid water is more effective than water vapor in attacking the grains. The characteristics of Apollo 17 orange fines were evaluated and compared with those of other samples. The interconnecting channels produced by water vapor adsorption were found to be wider than usual for other types of fines. Damage tracks caused by heavy cosmic ray nuclei and an unusually high halogen content might provide for stronger etching conditions upon exposure to water vapor.

Holmes, H. F.↗

Microscope Cells Containing Multiple Micromachined Wells

Tech Briefs, May 2003 19 Manufacturing Microscope Cells Containing Multiple Micromachined Wells The cost per cell has been reduced substantially. John H. Glenn Research Center, Cleveland, Ohio An improved design for multiple-well microscope cells and an associated improved method of fabricating them have been devised. [As used here, "well" denotes a cavity that has a volume of about 1 or 2 L and that is used to hold a sample for examination under a microscope. As used here, "cell" denotes a laminate, based on a standard 1- by 3-in. (2.54- by 7.62-cm) microscope slide, that comprises (1) the slide as the lower layer, (2) an intermediate layer that contains holes that serve as the wells, and (3) a top layer that either consists of, or is similar to, a standard microscope-slide cover slip.] The improved design and method of fabrication make it possible to increase (relative to a prior design and method of fabrication) the number of wells per cell while reducing the fabrication loss and reducing the cost per cell to about one-tenth of the prior value. In the prior design and method, the slide, well, and cover-slip layers were made from silicate glass. The fabrication of each cell was a labor-intensive process that included precise cutting and grinding of the glass components, fusing of the glass components, and then more grinding and polishing to obtain desired dimensions. Cells of the prior design were expensive and fragile, the rate of loss in fabrication was high, and the nature of the glass made it difficult to increase the number of cells per well. Efforts to execute alternative prior designs in plastic have not yielded satisfactory results because, for typical applications, plastics are not sufficiently thermally or chemically stable, not sufficiently optically clear, and/or not hard enough to resist scratching. The figure depicts a cell of the present improved type. The slide and cover-slip layers are made of a low-thermal-expansion glass (Pyrex(TradeMark) or equivalent) and the intermediate (well layer) is made of SiO2 - a combination of materials that results in a laminate stronger than one made from layers of silicate glass. Before the layers are assembled into the laminate, the SiO2 layer is micromachined to form the wells plus shallow grooves that, when subsequently covered with the cover slip, become capillary channels that are used to fill the wells with samples. The micromachining is accomplished by use of the same patterning and etching techniques used to fabricate microelectromechanical systems (MEMS).

Turner, Walter↗

SCR and GCR exposure ages of plagioclase grains from lunar soil

The concentrations of solar wind implanted Ar-36 in mineral grains extracted from lunar soils show that they were exposed to the solar wind on the lunar surface for an integrated time of 10E4 to 10E5 years. From the bulk soil 61501 plagioclase separates of 8 grain size ranges was prepared. The depletion of the implanted gases was achieved by etching aliquot samples of 4 grain sizes to various degrees. The experimental results pertinent to the present discussion are: The spallogenic Ne is, as in most plagioclases from lunar soils, affected by diffusive losses and of no use. The Ar-36 of solar wind origin amounts to (2030 + or - 100) x 10E-8 ccSTP/g in the 150 to 200 mm size fraction and shows that these grains were exposed to the solar wind for at least 10,000 years. The Ne-21/Ne-22 ratio of the spallogenic Ne is 0.75 + or - 0.01 and in very good agreement with the value of this ratio in a plagioclase separate from rock 76535. This rock has had a simple exposure history and its plagioclases have a chemical composition quite similar to those studied. In addition to the noble gases, the heavy particle tracks in an aliquot of the 150 to 200 mm plagioclase separate were investigated and found 92% of the grains to contain more than 10E8 tracks/sq cm. This corresponds to a mean track density of (5 + or - 1) x 10E8 tracks/sq cm. The exploration of the exposure history of the plagioclase separates from the soil 61501 do not contradict the model for the regolith dynamics but also fail to prove it.

Etique, P.↗

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗

Detection of Chamber Conditioning by CF4 in the GEC Cell

During oxide etch processes, buildup of fluorocarbon residues on reactor sidewalks can cause to drift and will necessitate time for conditioning and cleaning of the reactor. Various measurements in CF4 and Ar plasmas are made in an attempt to identify a metric able to indicate the chamber condition. Mass spectrometry and a Langmuir probe shows that the buildup of fluorocarbon films on the reactor surface causes a decrease in plasma floating potential, plasma potential, and ion energy in argon plasmas. This change in floating potential is also observed in CF4 plasma operation, and occurs primarily during the first hour and a half of plasma operation. A slight rise in electron density is also observed in the argon plasmas. Because the change is seen in an argon plasma, it is indicative of altered physical, not chemical, plasma-surface interactions. Specifically, the insulating films deposited on metal surfaces alter the electromagnetic fields seen by the plasma, affecting various parameters including the floating potential and electron density. An impedance probe placed on the inductive coil shows a slight reduction in plasma impedance due to this rising electron density. The optical emission of several species, including CF, C2, atomic Si and atomic C, is also monitored for changes in density resulting from the buildup of film on the chamber wall. Changes in the optical emission spectrum are comparable to the noise levels in their measurement.

Cruden, Brett A.↗

Germanium Lift-Off Masks for Thin Metal Film Patterning

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Brown, Ari↗

Fabrication and Atomic Force Microscopy Characterization of Molecular Composites of Fullerenes in Aerogel Matrix for Optical Limiting

An optical limiter is a device which exhibits a decrease in the transmittance in a material with an increase in intensity of light. Sol-gel techniques offer many advantages in the fabrication of materials. These materials possess many desirable properties for nonlinear optical (NLO) device applications which include transparency, high thermal and chemical stabilities, very low refractive index and dielectric constants. C60 shows a higher excited state absorption cross section than the ground state absorption cross section over the complete visible spectrum, and the spectrum of the excited state absorption of C60 has the same general shape as the ground state absorption. This fact suggests that fullerenes are ideal optical limiting materials. Aerogels are fabricated by sol-gel processing. One of the key issues is the dispersion of fullerenes into small and uniform pores of silica aerogel host matrices. The aerogel network was characterized by Raman spectroscopy. Atomic force microscopy is a technique with many advantages to characterize the aerogel materials. The morphology of the cleaved surface for a C60/aerogel sample shows that there are long paralleled shaped stripes with 20-30 nm in width and about 500 nm in length on the cleaved surface. The cleaved surface also was etched by 5% HF solution for one minutes, and it became smoother after HF etching. The main feature in on the surface is the spherical particles with the size of few nanometers, and no aggregated fullerenes appear. The fullerenes are well dispersed in the aerogel matrices.

Lu, W. J .↗

Silicon Microleaks for Inlets of Mass Spectrometers

Microleaks for inlets of mass spectrometers used to analyze atmospheric gases can be fabricated in silicon wafers by means of photolithography, etching, and other techniques that are commonly used in the manufacture of integrated circuits and microelectromechanical systems. The microleaks serve to limit the flows of the gases into the mass-spectrometer vacuums to specified very small flow rates consistent with the capacities of the spectrometer vacuum pumps. There is a need to be able to precisely tailor the dimensions of each microleak so as to tailor its conductance to a precise low value. (As used here, "conductance" signifies the ratio between the rate of flow in the leak and the pressure drop from the upstream to the downstream end of the leak.) To date, microleaks have been made, variously, of crimped metal tubes, pulled glass tubes, or frits. Crimped-metal and pulled-glass-tube microleaks cannot readily be fabricated repeatably to precise dimensions and are susceptible to clogging with droplets or particles. Frits tend to be differentially chemically reactive with various gas constituents and, hence, to distort the gas mixtures to be analyzed. The present approach involving microfabrication in silicon largely overcomes the disadvantages of the prior approaches.

Harpold, Dan↗

Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum oxide layer (approximately S nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the aluminum oxide. Graphene nanoribbons (with widths as small 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon aluminum oxide. These stacks served as etch-stops while the unprotected graphene was ion-milled in an oxygen plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the grapheme before and after processing.

detectors↗