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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Degradation Mode Identification by Photocarrier Lifetime Spectroscopy on Devices and Test Structures

In this presentation, I examine the basic concepts of the device physics that can be used to distinguish various degradation and recovery modes on a cell level. The known degradation modes (bulk LeTID and LID, UVID, etc.) are due to defects and impurities that cause the photocarrier recombination according to Shockley-Reed-Hall (SRH) statistics. The SRH recombination rate strongly depends on the balance of electron and hole capture rates into the defects, which in turn, are governed by their local concentrations. The strongest recombination takes place at approximately equal concentrations of electrons and holes, while at low injection conditions (when one type of carrier dominates) the SRH recombination is suppressed. For cell degradation modes that affect the passivated interface (UVID, H-induced TOPCon contact degradation) the defects are at the interface under low-injection conditions due to either high local doping or the adjacent built-in charge in the dielectric. This mode is characterized by changes in the "diode prefactor" J01 slope in the inverse lifetime-injection level curve. In contrast, bulk degradation (LeTID, LID) affects bulk lifetime, with J01 slope unchanged. Carrier lifetime - injection level plots therefore serve as clear indicators of different degradation modes and are shown by experimental examples.

14 SOLAR ENERGY↗
DOE OSTI2024

First-Principles Study on the Role of Cu and Cl-Based Dopants in NiO

Utilization of wide band gap oxide-based materials in thin-film solar energy technologies has increased in recent years. Among the numerous candidate oxide materials, NiO has shown many desirable optoelectronic properties that are applicable to thin-film PV technologies such as cadmium telluride PV. However, one critical factor requiring further investigation is the p-type doping behavior of NiO, specifically when the cadmium telluride solar cell undergoes conventional processes such as copper doping and chlorine-based activation treatment. The previous literature has shown a large degree of variability in hole concentrations in NiO when copper is used as the primary dopant. This study uses first-principles computational modeling based on density functional theory coupled with defect equilibria calculations to quantitatively explore the role of copper and chlorine-based extrinsic dopants in the p-type doping activity of NiO. The study reveals the importance of extrinsic dopants and their binding interactions with nickel vacancies to effectively p-dope NiO. It is suggested that both the formation of V Ni + Cu Ni and V Ni + Cl O defect pairs under a supersaturated state of NiO are potential mechanisms for increasing hole densities. On the other hand, the production of 2Cu Ni severely limits the effectiveness of p-doping in NiO, even in the presence of the aforementioned defect pairs. Furthermore, the study provides a guideline for experimentalists interested in using copper or chlorine species to understand how to controllably p-dope NiO during thin-film synthesis.

chlorine↗
NASA NTRS1977

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗
NASA NTRS1977

Wake characteristics of an eight-leg tower for a MOD-0 type wind turbine

Low speed wind tunnel tests were conducted to determine the flow characteristics of the wake downwind of a 1/25th scale, all tubular eight leg tower concept suitable for application to the DOE-NASA MOD-0 wind power turbine. Measurements were made of wind speed profiles, and from these were determined the wake local minimum velocity, average velocity, and width for several wind approach angles. These data are presented herein along with tower shadow photographs and comparisons with data from an earlier lattice type, four leg tower model constructed of tubular members. Values of average wake velocity defect ratio and average ratio of wake width to blade radius for the eight leg model were estimated to be around 0.17 and 0.30, respectively, at the plane of the rotor blade. These characteristics suggest that the tower wake of the eight leg concept is slightly less than that of the four leg design.

Savino, J. M.↗
NASA NTRS1993

Automated inspection of solder joints for surface mount technology

Researchers at NASA/GSFC evaluated various automated inspection systems (AIS) technologies using test boards with known defects in surface mount solder joints. These boards were complex and included almost every type of surface mount device typical of critical assemblies used for space flight applications: X-ray radiography; X-ray laminography; Ultrasonic Imaging; Optical Imaging; Laser Imaging; and Infrared Inspection. Vendors, representative of the different technologies, inspected the test boards with their particular machine. The results of the evaluation showed limitations of AIS. Furthermore, none of the AIS technologies evaluated proved to meet all of the inspection criteria for use in high-reliability applications. It was found that certain inspection systems could supplement but not replace manual inspection for low-volume, high-reliability, surface mount solder joints.

Savage, Robert M.↗
NASA NTRS2002

Spatiotemporal features of early neuronogenesis differ in wild-type and albino mouse retina

In albino mammals, lack of pigment in the retinal pigment epithelium is associated with retinal defects, including poor visual acuity from a photoreceptor deficit in the central retina and poor depth perception from a decrease in ipsilaterally projecting retinal fibers. Possible contributors to these abnormalities are reported delays in neuronogenesis (Ilia and Jeffery, 1996) and retinal maturation (Webster and Rowe, 1991). To further determine possible perturbations in neuronogenesis and/or differentiation, we used cell-specific markers and refined birth dating methods to examine these events during retinal ganglion cell (RGC) genesis in albino and pigmented mice from embryonic day 11 (E11) to E18. Our data indicate that relative to pigmented mice, more ganglion cells are born in the early stages of neuronogenesis in the albino retina, although the initiation of RGC genesis in the albino is unchanged. The cellular organization of the albino retina is perturbed as early as E12. In addition, cell cycle kinetics and output along the nasotemporal axis differ in retinas of albino and pigmented mice, both absolutely, with the temporal aspect of the retina expanded in albino, and relative to the position of the optic nerve head. Finally, blocking melanin synthesis in pigmented eyecups in culture leads to an increase in RGC differentiation, consistent with a role for melanin formation in regulating RGC neuronogenesis. These results point to spatiotemporal defects in neuronal production in the albino retina, which could perturb expression of genes that specify cell fate, number, and/or projection phenotype.

NASA Discipline Developmental Biology↗
DOE OSTI2026

Ammonolysis with N 2 -diluted NH 3 suppresses Ta( IV ) defects in BaTaO 2 N and enhances photocatalytic water oxidation

BaTaO 2 N stands out among oxynitride photocatalysts because of its ability to capture visible light and to drive the photoelectrochemical water oxidation reaction. However, its solar energy conversion performance is limited by electron–hole recombination at Ta( IV ) defects in the material. These defects are formed by overreduction of the Ta(v) oxide precursor by excess ammonia under the high temperature conditions during ammonolysis. Here we show for the first time that Ta( IV ) defect concentrations can be lowered by conducting the ammonolysis reaction in mixed NH 3 /N 2 gas. The obtained BaTaO 2 N samples crystallize in the cubic CaTiO 3 structure type and form 200–300 nm faceted nanocrystals, based on X-ray diffraction, scanning electron microscopy, and HRTEM. Electron paramagnetic resonance spectra observe the Ta( IV ) defects at g = 1.999 and confirm an 11-fold reduction for the product synthesized in mixed (0.13 : 1.0 vol) NH 3 /N 2 gas, equivalent to 1.14 × 10 16 cm −3 Ta( IV ) ions. This optimized BaTaO 2 N has nearly twice the photocatalytic oxygen evolution activity (AQE of 6.78% at 400 nm) of a reference material made with 1.0 atm ammonia and 78% higher photoelectrochemical water oxidation photocurrent (0.9 mA cm −2 at 1.23 V vs. RHE) under simulated sunlight. According to X-ray photoelectron spectroscopy, remaining Ta( IV ) defects are concentrated in the surface region of the BaTaO 2 N particles, where >50% of all Ta ions are found in the +4 oxidation state. This surface Ta( IV ) population can be directly observed in Vibrating Kelvin Probe Surface Photovoltage Spectra (VK-SPV) via its 1.2–1.4 eV photovoltage onset. Here, it suggests that the surface Ta( IV ) ions contribute empty d-states 0.5–0.7 eV below the BaTaO 2 N conduction band edge. These findings highlight how the energetics and concentrations of Ta( IV ) defects influence the photoelectrochemical water oxidation ability of BaTaO 2 N. Additionally, the work establishes ammonolysis with diluted NH 3 as a new tool to minimize defects in BaTaO 2 N and to raise its solar energy conversion efficiency toward its theoretical limit. Because of its simplicity, the reduced ammonia pressure strategy will likely be applicable to other oxynitrides, which generally suffer from overreduction problems during ammonolysis.

Salmanion, Mahya [University of California, Davis,↗
DOE OSTI2026

Data for An Orphan Gene BOOSTER Enhances Photosynthetic Efficiency and Plant Productivity

Seeds of Col-0 wild type, sig6 T-DNA mutants (CS877785, ABRC), PRL-1-OE, and sig6 T-DNA mutants transfected with PRL-1 (sig6::PRL-1) were planted in 1/2 MS media. Seedlings growth including chlorophyll development defects were investigated across the genotypes. Four-days-old-post-light exposure seedlings were harvested and performed RNAseq analysis with four biological replicates.

Biomass Analytics↗
NASA NTRS2018

A Risk Analysis Tool for Estimating the Risk of Electrical Failures Due to Human Induced Defects

Aerospace electrical systems are required to withstand and adequately operate in extremely harsh environments that include, for example, high radiation exposure, temperature extremes, intense vibrational stress and drastic temperature cycling. The nature of aerospace electronics also demands high reliability since, with very few exceptions, there is no chance for hardware servicing or repairs. Common risk mitigation techniques for this type of situation are to perform a Reliability Analysis of the system throughout the development cycle, and to use electrical components that are regarded as “high reliability” because of additional controls and requirements applied in their design, manufacturing and testing. Unfortunately, studies have shown that even though these techniques are used, many systems fail to meet mission requirements well before the predicted lifetimes. This paper presents the analysis of failures of electrical parts, experienced during various stages of system development, at NASA Goddard Space Flight Center, Greenbelt MD, between the years 2001 and 2013. These components were subjected to qualification, screening and testing in which the goal was to ensure that the components would survive the stresses of the mission. The analysis categorizes failures by part type and failure mechanisms. One of the results of the analysis was the realization that a surprising proportion of failures experienced during system integration and testing were caused by human error (i.e. human induced defect). Further analysis included the determination of root failure mechanisms and any influencing factors contributing to these failures. The major causes of these defects were attributed to electrostatic damage (ESD), electrical overstress (EOS), mechanical overstress (MOS), and thermal overstress (TOS). Finally, the study proposes a risk analysis tool which incorporates these major causes for the failures, termed error-producing conditions (EPCs), and a proportionality factor representing the number of each type of failure that has occurred at the facility under study. These factors are quantified and used to communicate the risk of human induced defects for the assembly, integration and testing of space hardware based on the system’s electrical parts list. The new risk identification can trigger risk-mitigating actions more effectively, based on the presence of component categories or other hazardous conditions that have a history of failure due to human error.

Majewicz, Peter J.↗
DOE OSTI2025

Mapping Hsp104 interactions using cross‐linking mass spectrometry

Molecular machines from the AAA+ (ATPases Associated with diverse cellular Activity) superfamily of protein disaggregases play important roles in protein folding, disaggregation and DNA processing. Recent cryo-EM structures of AAA+ molecular machines have uncovered nuanced changes in their conformation that underlie their specialized functions. Structural knowledge of these molecular machines in complex with substrates begins to explain their mechanism of activity. Here, we explore how cross-linking mass spectrometry (XL-MS) can be used to interpret changes in conformation induced by ATP in Hsp104 and how a substrate may interact with Hsp104. We applied a panel of cross-linking reagents to produce cross-linking maps of Hsp104 and interpret our data on previously determined X-ray and cryo-EM structures of Hsp104 from a thermophilic yeast, Calcarisporiella thermophila. We developed an analysis pipeline to differentiate between intra-subunit and inter-subunit contacts within the hexameric homo-oligomer. We identify cross-links that break the asymmetry that is present in Hsp104 in an ATP-hydrolysis competent conformation but is absent in an ATP-hydrolysis-defective mutant. Finally, we identify contacts between Hsp104 and a selected protein (proprotein convertase subtilisin/kexin type 9 PCSK9) to reveal contacts on the central channel of Hsp104 across the length of this protein indicating that we might have trapped interactions consistent with its translocation. Our simple and robust XL-MS-based experiments and methods help interpret how these molecular machines change conformation and bind to other proteins even in the context of homo-oligomeric assemblies enabling coupling state-of-the-art modeling approaches with XL-MS.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1926

Change of 180 degrees in the direction of a uniform current of air

In the construction of aerodynamic tunnels, it is a very important matter to obtain a uniform current of air in the sections where measurements are to be made. The straight type ordinarily used for attaining a uniform current and generally recommended for use, has great defects. If we desire to avoid these defects, it is well to give the canals of the tunnel such a form that the current, after the change of direction of its asymptotes, approximates a uniform and rectilinear movement. But for this, the condition must be met that at no place does the flow exceed the maximum velocity assumed, equal to the velocity in the straight parts of the canal.

WIND TUNNELS - AIR FLOW↗
NASA NTRS2008

An Uncertainty Structure Matrix for Models and Simulations

Software that is used for aerospace flight control and to display information to pilots and crew is expected to be correct and credible at all times. This type of software is typically developed under strict management processes, which are intended to reduce defects in the software product. However, modeling and simulation (M&S) software may exhibit varying degrees of correctness and credibility, depending on a large and complex set of factors. These factors include its intended use, the known physics and numerical approximations within the M&S, and the referent data set against which the M&S correctness is compared. The correctness and credibility of an M&S effort is closely correlated to the uncertainty management (UM) practices that are applied to the M&S effort. This paper describes an uncertainty structure matrix for M&S, which provides a set of objective descriptions for the possible states of UM practices within a given M&S effort. The columns in the uncertainty structure matrix contain UM elements or practices that are common across most M&S efforts, and the rows describe the potential levels of achievement in each of the elements. A practitioner can quickly look at the matrix to determine where an M&S effort falls based on a common set of UM practices that are described in absolute terms that can be applied to virtually any M&S effort. The matrix can also be used to plan those steps and resources that would be needed to improve the UM practices for a given M&S effort.

Green, Lawrence L.↗
NASA NTRS2008

Scintillation Breakdowns in Chip Tantalum Capacitors

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Teverovsky, Alexander↗
NASA NTRS2021

Deriving Deformable Mirror Performance Requirements in Simulation with Experimental Verification

Coronagraph instruments rely on predictable and stable deformable mirror (DM) surface displacement to achieve the contrast required to detect Earth-sized exoplanets orbiting nearby Solar-type stars. Anomalous DM behavior, such as unstable or pinned actuators, can limit contrast in coronagraphs. Simulating how these undesired behaviors affect the performance of a high contrast imaging architecture is important for developing requirements on their associated hardware. Simulating a vortex coronagraph (VC) with two deformable mirrors, this study quantifies how the number of pinned actuators affect the performance of Focal Plane Wavefront Sensing and Control algorithms using both Grid Search Electric Field Conjugation (EFC) and Planned EFC, which uses Beta-Bumping. The simulation also quantifies how various types of voltage noise such as zero-mean Gaussian noise, zero-mean periodic noise, and drift can affect the contrast of a VC during an observation run. A tolerance of a change in the Mean Normalized Intensity of ${1\times10^{-11}}$ is allocated to both types of error. If Planned EFC is used, only 1 pinned actuator on both DMs can be tolerated. If only pure Grid Search EFC is used the DMs cannot have any pinned actuators. For the case of zero-mean Gaussian noise and zero-mean periodic noise, one can tolerate a noise standard deviation of no more than ${\sigma = 0.45 \text{ mV}}$. For drift, we can only tolerate ${\sigma = 0.30 \text{ mV}}$ or less. These results show that the DM electronics and the DM themselves need to be nearly defect free to avoid having more than 1 pinned actuator. The electronics need to be tested for different types of noise statistics and that both the average and standard deviation of the noise should be measured.

Dean L. Palmer↗
NASA NTRS2003

Microstructural and Defect Characterization in Ceramic Composites Using an Ultrasonic Guided Wave Scan System

In this study, an ultrasonic guided wave scan system was used to characterize various microstructural and flaw conditions in two types of ceramic matrix composites, SiC/SiC and C/SiC. Rather than attempting to isolate specific lamb wave modes to use for characterization (as is desired for many types of guided wave inspection problems), the guided wave scan system utilizes the total (multi-mode) ultrasonic response in its inspection analysis. Several time and frequency-domain parameters are calculated from the ultrasonic guided wave signal at each scan location to form images. Microstructural and defect conditions examined include delamination, density variation, cracking, and pre/ post-infiltration. Results are compared with thermographic imaging methods. Although the guided wave technique is commonly used so scanning can be eliminated, applying the technique in the scanning mode allows a more precise characterization of defect conditions.

Roth, D. J.↗
NASA NTRS2019

Lamb wave defect detection and evaluation using a fully non-contact laser system

Traditional Lamb wave structural health monitoring (SHM)/nondestructive evaluation (NDE) system employs contact type transducers such as PZT, ultrasonic transducers, and optical fibers. In application, transducer attachment and maintenance can be time and labor consuming. In addition, the use of couplant and adhesives can introduce additional materials on structures, and the interface coupling is often not well understood. To overcome these limitations, we proposed a fully non-contact NDE system by employing pulsed laser (PL) for Lamb wave actuation and scanning laser Doppler vibrometer (SLDV) for Lamb wave sensing. The proposed system is implemented on aluminum plates. The PL Lamb wave excitation is calibrated, and the optimal parameters are obtained. Lamb wave modes are then characterized through 1D wavefield analysis. With the calibrated and characterized system, defect detection and evaluation are achieved on aluminum plates with simulated defects (surfaced-bonded quartz rod, and machine milled crack) through 1D and 2D inspection in both time-space and frequency-wavenumber domains.

Ma, Zhaoyun↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS1975

Growth defects in thick ion-plated coatings

Industrial ion plating conditions were selected to deposit metallic coatings such as copper, gold, and chromium 2 micrometer thick on metal and glass substrates. The surface finishes of 304 stainless steel, copper, and brass were utilized with mechanically and electrolytically polished surfaces. Nodular growth occurred in these coatings during ion plating as revealed by scanning electron microscopy. Surface irregularities such as scratches, steps, ledges, and so forth are responsible for outward growth, the typical cone type, whereas surface contaminants and loosely settled foreign particles are responsible for lateral growth; namely, the extreme localized surface outgrowths. These defect crystallographic features create porosity in the coatings when subjected to stresses and strains.

Spalvins, T.↗