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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
DOE OSTI2025

Structures of a synthetic antibody selected against and bound to the C‐terminal domain of Clostridium perfringens enterotoxin

Abstract Clostridium perfringensenterotoxin (CpE) causes cytotoxic gastrointestinal disease in mammalian epithelium by binding membrane protein receptors called claudins. Claudins direct the formation of cell/cell tight junctions through oligomerization and govern the transport of molecules between individual cells. CpE binds claudins through its C‐terminal domain (cCpE) and induces cytotoxicity through its N‐terminal domain. The non‐toxic cCpE is a useful tool to study claudins, tight junctions, and for translational applications, such as increasing the permeability of restrictive tissues like the blood–brain barrier or selective targeting of claudin overexpressing cancers. Conversely, there are no specialized molecular tools to study CpE or cCpE, or to modulate or inhibit their functions. We previously reported the development of synthetic antigen‐binding fragments (sFabs) that bind cCpE, and low‐resolution structures of them bound to claudin/cCpE complexes. Here, we determine high‐resolution structures of sFab COP‐2 bound to cCpE using X‐ray crystallography and cryogenic electron microscopy. The structures and biophysical findings provide the mechanism of COP‐2 binding to cCpE and the molecular determinants driving their interactions. These insights can advance the design of new antibody‐based tools from our COP‐2 scaffold to study or alter cCpE function and give rise to a “Trojan horse” strategy that exploits cCpE's tight junction barrier disrupting function to selectively deliver conjugated therapeutics through normally impermeable tissues.

Biochemistry & Molecular Biology↗
NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗
DOE OSTI2024

Structure of HIV-1 RRE stem-loop II identifies two conformational states of the high-affinity Rev binding site

During HIV infection, specific RNA-protein interaction between the Rev response element (RRE) and viral Rev protein is required for nuclear export of intron-containing viral mRNA transcripts. Rev initially binds the high-affinity site in stem-loop II, which promotes oligomerization of additional Rev proteins on RRE. Here, we present the crystal structure of RRE stem-loop II in distinct closed and open conformations. The high-affinity Rev-binding site is located within the three-way junction rather than the predicted stem IIB. The closed and open conformers differ in their non-canonical interactions within the three-way junction, and only the open conformation has the widened major groove conducive to initial Rev interaction. Rev binding assays show that RRE stem-loop II has high- and low-affinity binding sites, each of which binds a Rev dimer. We propose a binding model, wherein Rev-binding sites on RRE are sequentially created through structural rearrangements induced by Rev-RRE interactions.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1986

Proposal for superstructure based high efficiency photovoltaics

A novel class of cascade structures is proposed which features multijunction upper subcells, referred to as superstructure high-efficiency photovoltaics (SHEPs). The additional junctions enhance spectral response and improve radiation tolerance by reducing bulk recombination losses. This is important because ternary III-V alloys, which tend to have short minority-carrier diffusion lengths, are the only viable materials for the high-bandgap upper subcells required for cascade solar cells. Realistic simulations of AlGaAs SHEPs show that one-sun AM0 efficiencies in excess of 26 percent are possible.

Wagner, M.↗
NASA NTRS1980

Development of simplified process for environmentally resistant cells

This report describes a program to develop a simple, foolproof, all vacuum solar cell manufacturing process which can be completely automated and which results in medium efficiency cells which are inherently environmentally resistant. All components of the completed cells are integrated into a monolithic structure with no material interfaces. The exposed materials (SI, Al2O3, Al, Ni) are all resistant to atmospheric attack and the junction, per se, is passivated to prevent long term degradation. Such cells are intended to be incorporated into a simple module consisting basically of a press formed metallic superstructure with a separated glass cover for missile, etc., protection.

King, W. J.↗
NASA NTRS1983

Gallium arsenide single crystal solar cell structure and method of making

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Stirn, Richard J.↗
NASA NTRS2016

Final Mission and Navigation Design for the 2016 Mars InSight Mission

Project Overview: NASA’s 12th Discovery Program mission that will place a single geophysical lander on Mars to study its deep interior using seismic (tidal, marsquake, and impact), rotational, and thermal measurements -First mission to unveil the composition, structure and thermal state of martian crust, mantle and core; Rebuild of the Phoenix flight system, upgraded with Juno/GRAIL avionics -Phoenix cruise stage: 3-axis stabilized, 3.2 square meter UTJ (Ultra Triple-Junction) solar array, X-band telecom -Phoenix aeroshell (heat shield, backshell, parachute) -Phoenix lander: radar, pulsed thrusters, legs, payload deck, 5.1 square meter UTJ solar arrays, two redundant Li-ion batteries, UHF (Ultra High Frequency)/X-band telecom -Dual string: Internally or functionally-redundant equipment; Science Payload -SEIS (Seismic Experiment for Interior Structure) / CNES (Centre National d’Etudes Spatiales); Three-axis seismometry, to measure seismic waves traveling through the interior -HP3 (Heat Flow and Physical Properties Probe) / DLR (German Aerospace Center) -Subsurface heat probe, to measure the heat flux from the interior - RISE (Rotation and Interior Structure Experiment) / JPL (Jet Propulsion Laboratory) -Radiometric geodesy, to determine precession & nutation of the planet’s rotation axis. 2016 Disclaimer: The InSight launch in 2016 was suspended due to critical issues with the Seismic Experiment for Interior Structure (SEIS) instrument that could not be fixed prior to the planned launch period. This presentation and its corresponding paper represent the state of the design for the 2016 mission. No attempt has been made to reflect the latest developments. [2018 Note: InSight (Mars Lander) was later launched and arrived on Mars on Nov. 26, 2018.]

Abilleira, F.↗
DOE OSTI2024

Optimization of Structurally Enhanced Solder Transient Liquid Phase Bonding

High temperature packaging technologies are a necessity for high temperature capable devices. SAC305 solder has an operational limit of 174°C imposed by creep effects which aligns well with current junction temperature limits of 175°C. Wide band gap semiconductor materials have the potential to reach junction temperatures of up to 800°C that are not currently attainable with significant reliability. Capitalizing on this potential will requires substrates and attachments that can operate well beyond the current 175°C standard. Silver sintering pastes have received widespread interest as a high temperature attachment alternative. However, the process requires high pressure bonding in an inert environment to achieve acceptable bond quality. Transient liquid phase (TLP) sintering is capable of good bond quality without pressure requirements but suffers from low thermal conductivity and only slightly reduced cost compared to silver sintering. SAC305 solder contains the same constituent materials for TLP as available copper-tin TLP sintering paste. By introducing engineered surface structures into the bond, intermetallic formation can be accelerated producing a bond similar to TLP sintering but in an ambient environment and for reduced cost. While this process has been demonstrated, it has not yet been optimized. Currently bonds are formed using a 75 μm stencil on substrate surface structures 24 μm tall, covering 19% of the bonding area. The process takes about 4 hours not including the formation of surface structures. Here, this study will center on the effects of stencil thickness and coating methods. Samples will be analyzed by scanning acoustic microscopy, die shear testing and cross sectional scanning acoustic microscopy.

42 ENGINEERING↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗
NASA NTRS1976

Improved GaAs solar cells with very thin junctions

Violet cells with 500-1000 A junction depths have been made in GaAs by narrow junction diffusion followed by anodization. The best AM0 efficiencies obtained by this technique have been 10.5% (14% at AM1). GaAlAs-GaAs structures with very thin GaAlAs layers are much more promising, and efficiencies of over 18% at AM0 have been measured (21.9% at AM1).

Hovel, H. J.↗
NASA NTRS1992

Modelling and performance of Nb SIS mixers in the 1.3 mm and 0.8 mm bands

We describe the modeling and subsequent improvements of SIS waveguide mixers for the 200-270 and 330-370 GHz bands (Blundell, Carter, and Gundlach 1988, Carter et al 1991). These mixers are constructed for use in receivers on IRAM radiotelescopes on Pico Veleta (Spain, Sierra Nevada) and Plateau de Bure (French Alps), and must meet specific requirements. The standard reduced height waveguide structure with suspended stripline is first analyzed and a model is validated through comparison with scale model and working scale measurements. In the first step, the intrinsic limitations of the standard mixer structure are identified, and the parameters are optimized bearing in mind the radioastronomical applications. In the second step, inductive tuning of the junctions is introduced and optimized for minimum noise and maximum bandwidth. In the 1.3 mm band, a DSB receiver temperature of less than 110 K (minimum 80 K) is measured from 180 through 260 GHz. In the 0.8 mm band, a DSB receiver temperature of less than 250 K (minimum 175 K) is obtained between 325 and 355 GHz. All these results are obtained with room-temperature optics and a 4 GHz IF chain having a 500 MHz bandwidth and a noise temperature of 14 K.

Karpov, A.↗
NASA NTRS1996

Structural Concepts Study of Non-circular Fuselage Configurations

A preliminary study of structural concepts for noncircular fuselage configurations is presented. For an unconventional flying-wing type aircraft, in which the fuselage is inside the wing, multiple fuselage bays with non-circular sections need to be considered. In a conventional circular fuselage section, internal pressure is carried efficiently by a thin skin via hoop tension. If the section is non-circular, internal pressure loads also induce large bending stresses. The structure must also withstand additional bending and compression loads from aerodynamic and gravitational forces. Flat and vaulted shell structural configurations for such an unconventional, non-circular pressurized fuselage of a large flying-wing were studied. A deep honeycomb sandwich-shell and a ribbed double-wall shell construction were considered. Combinations of these structural concepts were analyzed using both analytical and simple finite element models of isolated sections for a comparative conceptual study. Weight, stress, and deflection results were compared to identify a suitable configuration for detailed analyses. The flat sandwich-shell concept was found preferable to the vaulted shell concept due to its superior buckling stiffness. Vaulted double-skin ribbed shell configurations were found to be superior due to their weight savings, load diffusion, and fail-safe features. The vaulted double-skin ribbed shell structure concept was also analyzed for an integrated wing-fuselage finite element model. Additional problem areas such as wing-fuselage junction and pressure-bearing spar were identified.

Mukhopadhyay, Vivel↗
NASA NTRS1995

Measurements of noise in Josephson-effect mixers

We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF (infrasonic) frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V greater than I(sub C)R(sub N)), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.

NOISE MEASUREMENT↗
DOE OSTI2025

Conformational heterogeneity in the dGsw purine riboswitch: role of Mg²⁺ and 2’-dG in aptamer folding

Recent advancements in RNA structural biology have focused on unraveling the complexities of non-coding mRNA elements like riboswitches. These cis-acting regulatory regions undergo structural changes in response to specific cellular metabolites, leading to up or downregulation of downstream genes. The purine riboswitch family regulates many prokaryotic genes involved in purine degradation and biosynthesis. They feature an aptamer domain organized around a 3-way helical junction, where ligand encapsulation occurs at the junctional core. In our study, we chemically probed the aptamer domain of the 2’-dG-sensing purine riboswitch from Mesoplasma florum (dGsw) under various solution conditions to understand how Mg²⁺ and 2’-dG influence riboswitch folding. Here, we find that efficient 2’-dG binding strongly depends on Mg²⁺, indicating that Mg²⁺ is essential for priming dGsw for ligand interactions. We identified a previously undescribed sequence in the 5’ tail of dGsw that is complementary to a conserved helix. The inclusion of this region in a construct led to intramolecular competition between the alternate helix, Palt, and P1. Mutational analysis confirmed that 5’ flanking end of the aptamer domain forms an alternate helix in the absence of ligand. Molecular dynamics simulations revealed that this alternative conformation is stable. This helix may, therefore, facilitate the formation of an anti-terminator helix by opening the 3-way junction surrounding the 2’-dG binding site. Our study further establishes the importance of a closed terminal P1 helix conformation for metabolite binding and suggests that the delicate interplay between P1 and Palt may fine-tune downstream gene regulation. These insights offer a new perspective on riboswitch structure and enhance our understanding of the role that a conformational ensemble plays in riboswitch activity and regulation.

Biochemistry & Molecular Biology↗
DOE OSTI2025

Spin-filter tunneling detection of antiferromagnetic resonance with electrically tunable damping

Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. In this work, we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in platinum ditelluride (PtTe 2 )/bilayer chromium sulfide bromide (CrSBr)/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe 2 electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high-frequency dynamics.

Cham, Thow Min Jerald [Cornell University, Ithaca,↗
NASA NTRS1975

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗
NASA NTRS1986

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Daud, Taher↗