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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1994

Space Shuttle orbit determination using empirical force modeling of attitude maneuvers for the German MOMS-02/D2 mission

In the spring of 1993, the MOMS-02 (modular Optoelectronic Multispectral Scanner) camera, as part of the second German Spacelab mission aboard STS-55, successfully took digital threefold stereo images of the surface of the Earth. While the mission is experimental in nature, its primary goals are to produce high quality maps and three-dimensional digital terrain models of the Earth's surface. Considerable improvement in the quality of the terrain model can be attained if information about the position and attitude of the camera is included during the adjustment of the image data. One of the primary sources of error in the Shuttle's position is due to the significant attitude maneuvers conducted during the course of the mission. Various arcs, using actual Tracking and Data Relay Satellite (TDRSS) Doppler data of STS-55, were processed to determine how effectively empirical force modeling could be used to solve for the radial, transverse, and normal components of the orbit perturbations caused by these routine maneuvers. Results are presented in terms of overlap-orbit differences in the three components. Comparisons of these differences, before and after the maneuvers are estimated, show that the quality of an orbit can be greatly enhanced with this technique, even if several maneuvers are present. Finally, a discussion is made of some of the difficulties encountered with this approach, and some ideas for future studies are presented.

Vonbraun, C.↗
NASA NTRS1994

Orbital processing of high-quality CdTe compound semiconductors

CdZnTe crystals were grown in one-g and in micro-g for comparative analysis. The two micro-g crystals were grown in the Crystal Growth Furnace during the First United States Microgravity Laboratory mission (USML-1). The samples were analyzed for chemical homogeneity, structural perfection, and optoelectronic performance (infrared transmission). Fourier Transform Infrared (FTIR) transmission of both ground and flight materials showed that the infrared transmission was close to theoretical, 63% versus 66%, suggesting that the material was close to the stochiometric composition during both the ground and flight experiments. Infrared microscopy confirmed that the principal precipitates were Te and their size (1-10 microns) and density suggested that the primary flight and ground base samples experienced similar cooling rates. Macrosegregation was predicted, using scaling analysis, to be low even in one-g crystals and this was confirmed experimentally, with nearly diffusion controlled growth achieved even in the partial mixing regime on the ground. Radial segregation was monitored in the flight samples and was found to vary with fraction solidified, but was disturbed due to the asymmetric grvitational and thermal fields experienced by the flight samples. The flight samples, however, were found to be much higher in structural perfection than the ground samples produced in the same furnace under identical growth conditions except for the gravitational level. Rocking curve widths were found to be substantially reduced, from 20/35 (one-g) to 9/20 (micro-g) for the best regions of the crystals. The full width at half maximum (FWHM) of 9 arc seconds is as good as the best reported terrestrially for this material. The ground samples were found to have a fully developed mosaic structure consisting of subgrains, whereas the flight sample dislocations were discrete and no mosaic substructure was evident. The defect density was reduced from 50-100,000 (one-g) to 500-25000 EPD (micro-g). These results were confirmed using rocking curve analysis, synchrotron topography, and etch pit analysis. The low dislocation density is thought to have resulted from the near-absence of hydrostatic pressure which allowed the melt to solidify with minimum or no wall contact, resulting in very low stress being exerted on the crystal during growth or during post-solidification cooling.

Larson, David J., Jr.↗
NASA NTRS1994

Advanced technologies in the ASI MLRO towards a new generation laser ranging system

Matera Laser Ranging Observatory (MLRO) is a high performance, highly automated optical and astronomical observatory currently under design and development by AlliedSignal for the Italian Space Agency (ASI). It is projected to become operational at the Centro Geodesia Spaziale in Matera, Italy, in 1997. MLRO, based on a 1.5-meter astronomical quality telescope, will perform ranging to spacecraft in earthbound orbits, lunar reflectors, and specially equipped deep space missions. The primary emphasis during design is to incorporate state-of-the-art technologies to produce an intelligent, automated, high accuracy ranging system that will mimic the characteristic features of a fifth generation laser ranging system. The telescope has multiple ports and foci to support future experiments in the areas of laser communications, lidar, astrometry, etc. The key features providing state-of-the-art ranging performance include: a diode-pumped picosecond (50 ps) laser, high speed (3-5 GHz) optoelectronic detection and signal processing, and a high accuracy (6 ps) high resolution (less than 2 ps) time measurement capability. The above combination of technologies is expected to yield millimeter laser ranging precision and accuracy on targets up to 300,000 km, surpassing the best operational instrument performance to date by a factor of five or more. Distributed processing and control using a state-of-the-art computing environment provides the framework for efficient operation, system optimization, and diagnostics. A computationally intelligent environment permits optimal planning, scheduling, tracking, and data processing. It also supports remote access, monitor, and control for joint experiments with other observatories.

Varghese, Thomas↗
NASA NTRS1994

The JSC Research and Development Annual Report 1993

Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 47 additional projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.

Source record↗
NASA NTRS1995

Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices

The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.

Cho, Pak S.↗
NASA NTRS1995

Wavelength-Division Multiplexing With Integrated Optics

High-density wavelength-division-multiplexed optoelectronic integrated circuits developed for use as transceivers in fiber-optic communications between computers, according to proposal. One of proposed multiplexer/demultiplexer units provides simultaneous communication on 32 wavelength channels at overall data rate greater than 40 Gb/s, increasing channel capacity, simplifying transmitting and receiving electronics and reducing delay by eliminating serial-to-parallel and parallel-to-serial "bottlenecks."

Lang, Robert J.↗
NASA NTRS1995

pH Optrode Instrumentation

pH-sensitive chromophoric reagents immobilized in porous optical fibers. Optoelectronic instrumentation system measures acidity or alkalinity of aqueous nutrient solution. Includes one or more optrodes, which are optical-fiber chemical sensors, in sense, analogous to electrodes but not subject to some of spurious effects distorting readings taken by pH electrodes. Concept of optrodes also described in "Ethylene-Vapor Optrodes" (KSC-11579). pH optrode sensor head, with lead-in and lead-out optical fibers, convenient for monitoring solutions located away from supporting electronic equipment.

Tabacco, Mary Beth↗
NASA NTRS1995

Ultraviolet Source For Testing Hydrogen-Fire Detectors

Hand-held portable unit emits ultraviolet light similar to that emitted by hydrogen burning in air. Developed for use in testing optoelectronic hydrogen-fire detectors, which respond to ultraviolet light at wavelengths from 180 to 240 nanometers. Wavelength range unique in that within it, hydrogen fires emit small but detectable amounts of radiation, light from incandescent lamps and Sun almost completely absent, and air sufficiently transmissive to enable detection of hydrogen fire from distance. Consequently, this spectral region favorable for detecting hydrogen fires while minimizing false alarms.

Hall, Gregory A.↗
NASA NTRS1995

Ultra-High-Density Ferroelectric Memories

Features include fast input and output via optical fibers. Memory devices of proposed type include thin ferroelectric films in which data stored in form of electric polarization. Assuming one datum stored in region as small as polarization domain, sizes of such domains impose upper limits on achievable storage densities. Limits approach 1 terabit/cm(Sup2) in all-optical versions of these ferroelectric memories and exceeds 1 gigabit/cm(Sup2) in optoelectronic versions. Memories expected to exhibit operational lives of about 10 years, input/output times of about 10 ns, and fatigue lives of about 10(Sup13) cycles.

Thakoor, Sarita↗
NASA NTRS1995

Micromachined, Electrostatically Deformable Reflectors

Micromachined, closed-loop, electrostatically actuated reflectors (microCLEARs) provide relatively simple and inexpensive alternatives to large, complex, expensive adaptive optics used to control wavefronts of beams of light in astronomy and in experimental laser weapons. Micromachining used to make deformable mirror, supporting structure, and actuation circuitry. Development of microCLEARs may not only overcome some of disadvantages and limitations of older adaptive optics but may also satisfy demands of potential market for small, inexpensive deformable mirrors in electronically controlled film cameras, video cameras, and other commercial optoelectronic instruments.

Bartman, Randall K.↗
NASA NTRS1995

Compact Multifunction Inspection Head

Multiple-sensor inspection head designed to be mounted at tip of robot arm for performing multiple automated and/or remotely controlled inspection functions. Inspection head houses optoelectronic sensors, electrochemical sensor, sources of illumination, and parallel-jaw gripper.

Volpe, Richard A.↗
NASA NTRS1995

Optimization of GaN thin films via MOCVD

A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.

Dickens, Corey↗
NASA NTRS1995

The growth of low band-gap InAs on (111)B GaAs substrates

The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have been grown on (111)B GaAs substrates, thereby enabling the measurement of electronic and optical properties.

Welser, R. E.↗
NASA NTRS1995

Lightweight, light-trapped, thin GaAs solar cell for spacecraft applications: Progress and results update

Progress is reported with respect to the development of ultra-lightweight, high performance, thin, light trapped GaAs solar cells for advanced space power systems. Conversion efficiencies of over 17.7% have been demonstrated for a 3 micron thick, 1 sq cm silicone bonded solar cell. This results in a specific power of over 1020 W/kg. Device parameters were 1.011 V open circuit voltage, 80% fill factor, and a short-circuit current density of 29.5 mA/sq cm . In addition to silicone bonding, the use of electrostatic bonding to attach the coverglass support to the front surface enables an ultra-thin, all back contact design that survives processing temperatures greater than 750 C. This also results in a 10% reduction of the cell weight for a potential specific power of 1270 W/kg. All back contact, ultra-thin, electrostatically bonded GaAs solar cell prototypes have been completed demonstrating an open circuit voltage of 1 volt for a cell base thickness of 1 micron with a 0.5 micron emitter. This technology will result in a revolutionary improvement in survivability, performance, and manufacturability of lightweight GaAs solar cell products for future Earth-orbiting science and space exploration missions. The thin, electrostatically bonded, all back contact GaAs device technology has multiple uses for specialty high performance solar cells and other optoelectronic devices.

Hannon, M. H.↗
NASA NTRS1995

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Woodyard, James R.↗
NASA NTRS1996

Advanced Triangulation Displacement Sensors

Advanced optoelectronic triangulation displacement sensors undergoing development. Highly miniaturized, more stable, more accurate, and relatively easy to use. Incorporate wideband electronic circuits suitable for real-time monitoring and control of displacements. Measurements expected to be accurate to within nanometers. In principle, sensors mass-produced at relatively low unit cost. Potential applications numerous. Possible industrial application in measuring runout of rotating shaft or other moving part during fabrication in "zero-defect" manufacturing system, in which measured runout automatically corrected.

Poteet, Wade M.↗
NASA NTRS1995

High-temperature fiber-optic lever microphone

The design and construction of a fiber-optic lever microphone, capable of operating continuously at temperatures up to 538 C (1000 F) are described. The design is based on the theoretical sensitivities of each of the microphone system components, namely, a cartridge containing a stretched membrane, an optical fiber probe, and an optoelectronic amplifier. Laboratory calibrations include the pistonphone sensitivity and harmonic distortion at ambient temperature, and frequency response, background noise, and optical power transmission at both ambient and elevated temperatures. A field test in the Thermal Acoustic Fatigue Apparatus at Langley Research Center, in which the microphone was subjected to overall sound-pressure levels in the range of 130-160 dB and at temperatures from ambient to 538 C, revealed good agreement with a standard probe microphone.

Zuckerwar, Allan J.↗
NASA NTRS1995

Lightweight Fiber Optic Gas Sensor for Monitoring Regenerative Food Production

In this final report, Physical Optics Corporation (POC) describes its development of sensors for oxygen, carbon dioxide, and relative humidity. POC has constructed a phase fluorometer that can detect oxygen over the full concentration range from 0 percent to 100 percent. Phase-based measurements offer distinct advantages, such as immunity to source fluctuation, photobleaching, and leaching. All optics, optoelectronics, power supply, and the printed circuit board are included in a single box; the only external connections to the fluorometer are the optical fiber sensor and a power cord. The indicator-based carbon dioxide sensor is also suitable for short-term and discrete measurements over the concentration range from 0 percent to 100 percent. The optical fiber-based humidity sensor contains a porous core for direct interaction of the light beam with water vapor within fiber pores; the detection range for the humidity sensor is 10 percent to 100 percent, and response time is under five minutes. POC is currently pursuing the commercialization of these oxygen and carbon dioxide sensors for environmental applications.

Schmidlin, Edward↗