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At least 307 records · Page 17

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

DeGregorio, Kelly↗

NASA Tech Briefs, July 2007

Topics covered include: Miniature Intelligent Sensor Module; "Smart" Sensor Module; Portable Apparatus for Electrochemical Sensing of Ethylene; Increasing Linear Dynamic Range of a CMOS Image Sensor; Flight Qualified Micro Sun Sensor; Norbornene-Based Polymer Electrolytes for Lithium Cells; Making Single-Source Precursors of Ternary Semiconductors; Water-Free Proton-Conducting Membranes for Fuel Cells; Mo/Ti Diffusion Bonding for Making Thermoelectric Devices; Photodetectors on Coronagraph Mask for Pointing Control; High-Energy-Density, Low-Temperature Li/CFx Primary Cells; G4-FETs as Universal and Programmable Logic Gates; Fabrication of Buried Nanochannels From Nanowire Patterns; Diamond Smoothing Tools; Infrared Imaging System for Studying Brain Function; Rarefying Spectra of Whispering-Gallery-Mode Resonators; Large-Area Permanent-Magnet ECR Plasma Source; Slot-Antenna/Permanent-Magnet Device for Generating Plasma; Fiber-Optic Strain Gauge With High Resolution And Update Rate; Broadband Achromatic Telecentric Lens; Temperature-Corrected Model of Turbulence in Hot Jet Flows; Enhanced Elliptic Grid Generation; Automated Knowledge Discovery From Simulators; Electro-Optical Modulator Bias Control Using Bipolar Pulses; Generative Representations for Automated Design of Robots; Mars-Approach Navigation Using In Situ Orbiters; Efficient Optimization of Low-Thrust Spacecraft Trajectories; Cylindrical Asymmetrical Capacitors for Use in Outer Space; Protecting Against Faults in JPL Spacecraft; Algorithm Optimally Allocates Actuation of a Spacecraft; and Radar Interferometer for Topographic Mapping of Glaciers and Ice Sheets.

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NASA Tech Briefs, August 2007

Topics include: Program Merges SAR Data on Terrain and Vegetation Heights; Using G(exp 4)FETs as a Data Router for In-Plane Crossing of Signal Paths; Two Algorithms for Processing Electronic Nose Data; Radiation-Tolerant Dual Data Bus; General-Purpose Front End for Real-Time Data Processing; Nanocomposite Photoelectrochemical Cells; Ultracapacitor-Powered Cordless Drill, Cumulative Timers for Microprocessors; Photocatalytic/Magnetic Composite Particles; Separation and Sealing of a Sample Container Using Brazing; Automated Aerial Refueling Hitches a Ride on AFF; Cobra Probes Containing Replaceable Thermocouples; High-Speed Noninvasive Eye-Tracking System; Detergent-Specific Membrane Protein Crystallization Screens; Evaporation-Cooled Protective Suits for Firefighters; Plasmonic Antenna Coupling for QWIPs; Electronic Tongue Containing Redox and Conductivity Sensors; Improved Heat-Stress Algorithm; A Method of Partly Automated Testing of Software; Rover Wheel-Actuated Tool Interface; and Second-Generation Electronic Nose.

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NASA Tech Briefs, June 2006

Topics covered include: Magnetic-Field-Response Measurement-Acquisition System; Platform for Testing Robotic Vehicles on Simulated Terrain; Interferometer for Low-Uncertainty Vector Metrology; Rayleigh Scattering for Measuring Flow in a Nozzle Testing Facility; "Virtual Feel" Capaciflectors; FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers; Miniature Housings for Electronics With Standard Interfaces; Integrated Modeling Environment; Modified Recursive Hierarchical Segmentation of Data; Sizing Structures and Predicting Weight of a Spacecraft; Stress Testing of Data-Communication Networks; Framework for Flexible Security in Group Communications; Software for Collaborative Use of Large Interactive Displays; Microsphere Insulation Panels; Single-Wall Carbon Nanotube Anodes for Lithium Cells; Tantalum-Based Ceramics for Refractory Composites; Integral Flexure Mounts for Metal Mirrors for Cryogenic Use; Templates for Fabricating Nanowire/Nanoconduit- Based Devices; Measuring Vapors To Monitor the State of Cure of a Resin; Partial-Vacuum-Gasketed Electrochemical Corrosion Cell; Theodolite Ring Lights; Integrating Terrain Maps Into a Reactive Navigation Strategy; Reducing Centroid Error Through Model-Based Noise Reduction; Adaptive Modeling Language and Its Derivatives; Stable Satellite Orbits for Global Coverage of the Moon; and Low-Cost Propellant Launch From a Tethered Balloon

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NASA Tech Briefs, December 2006

Topic include: Inferring Gear Damage from Oil-Debris and Vibration Data; Forecasting of Storm-Surge Floods Using ADCIRC and Optimized DEMs; User Interactive Software for Analysis of Human Physiological Data; Representation of Serendipitous Scientific Data; Automatic Locking of Laser Frequency to an Absorption Peak; Self-Passivating Lithium/Solid Electrolyte/Iodine Cells; Four-Quadrant Analog Multipliers Using G4-FETs; Noise Source for Calibrating a Microwave Polarimeter; Hybrid Deployable Foam Antennas and Reflectors; Coating MCPs with AlN and GaN; Domed, 40-cm-Diameter Ion Optics for an Ion Thruster; Gesture-Controlled Interfaces for Self-Service Machines; Dynamically Alterable Arrays of Polymorphic Data Types; Identifying Trends in Deep Space Network Monitor Data; Predicting Lifetime of a Thermomechanically Loaded Component; Partial Automation of Requirements Tracing; Automated Synthesis of Architecture of Avionic Systems; SSRL Emergency Response Shore Tool; Wholly Aromatic Ether-Imides as n-Type Semiconductors; Carbon-Nanotube-Carpet Heat-Transfer Pads; Pulse-Flow Microencapsulation System; Automated Low-Gravitation Facility Would Make Optical Fibers; Alignment Cube with One Diffractive Face; Graphite Composite Booms with Integral Hinges; Tool for Sampling Permafrost on a Remote Planet; and Special Semaphore Scheme for UHF Spacecraft Communications.

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Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

Patterson, Richard L.↗

NASA Tech Briefs, June 2013

Topics include: Cloud Absorption Radiometer Autonomous Navigation System - CANS, Software Method for Computed Tomography Cylinder Data Unwrapping, Re-slicing, and Analysis, Discrete Data Qualification System and Method Comprising Noise Series Fault Detection, Simple Laser Communications Terminal for Downlink from Earth Orbit at Rates Exceeding 10 Gb/s, Application Program Interface for the Orion Aerodynamics Database, Hyperspectral Imager-Tracker, Web Application Software for Ground Operations Planning Database (GOPDb) Management, Software Defined Radio with Parallelized Software Architecture, Compact Radar Transceiver with Included Calibration, Software Defined Radio with Parallelized Software Architecture, Phase Change Material Thermal Power Generator, The Thermal Hogan - A Means of Surviving the Lunar Night, Micromachined Active Magnetic Regenerator for Low-Temperature Magnetic Coolers, Nano-Ceramic Coated Plastics, Preparation of a Bimetal Using Mechanical Alloying for Environmental or Industrial Use, Phase Change Material for Temperature Control of Imager or Sounder on GOES Type Satellites in GEO, Dual-Compartment Inflatable Suitlock, Modular Connector Keying Concept, Genesis Ultrapure Water Megasonic Wafer Spin Cleaner, Piezoelectrically Initiated Pyrotechnic Igniter, Folding Elastic Thermal Surface - FETS, Multi-Pass Quadrupole Mass Analyzer, Lunar Sulfur Capture System, Environmental Qualification of a Single-Crystal Silicon Mirror for Spaceflight Use, Planar Superconducting Millimeter-Wave/Terahertz Channelizing Filter, Qualification of UHF Antenna for Extreme Martian Thermal Environments, Ensemble Eclipse: A Process for Prefab Development Environment for the Ensemble Project, ISS Live!, Space Operations Learning Center (SOLC) iPhone/iPad Application, Software to Compare NPP HDF5 Data Files, Planetary Data Systems (PDS) Imaging Node Atlas II, Automatic Calibration of an Airborne Imaging System to an Inertial Navigation Unit, Translating MAPGEN to ASPEN for MER, Support Routines for In Situ Image Processing, and Semi-Supervised Eigenbasis Novelty Detection.

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Current Source Logic Gate

A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

Krasowski, Michael J.↗

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗

Current Source Logic Gate

A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

Krasowski, Michael J.↗

Long Term Integration and Implementation of ATD-2 Phase 3 Capabilities

Topics include review of recommendations from an earlier Surface CDM (Collaborative Decision Making) Team (SCT) & Flow Evaluation Team (FET) meeting, support of alternative work flows, and software integration in operational systems. The briefing also identifies incorporation of ATD-2 Phase 3 capabilities into the alternative work flows.

ATD-2, IADS↗

Surface Meets TOS Update & Potential Future Work

This briefing for the Surface CDM (Collaborative Decision Making) Team (SCT) & Flow Evaluation Team (FET) discussed the foundational data/information quality needs to enable a collaborative TOS concept that includes surface. The primary goal of this briefing was on soliciting broad feedback from the operator community. This discusses the importance of the Earliest Off Block Time (EOBT) as a predictor for improving NAS demand predictions as well as possible areas where SCT/FET could contribute to uses of Trajectory Option Sets in future FAA systems.

ATD-2, IADS, SCT/FET↗

Required Filtering to Optimize Use of TOS

This presentation was originally given to ATD-2 industry partners at the Surface CDM (Collaborative Decision Making) Team (SCT) & Flow Evaluation Team (FET) meeting at NTX on 2/20/2020. The briefing presented lessons learned from Stormy 19, an overview of how terminal restrictions are handled by the ATD-2 system, and additional Trajectory Option Sets (TOS) route filtering capabilities planned for Stormy 20.

ATD-2↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

STRV RADMON: An Integrated High-Energy Particle Detector

The RADMON (Radiation Monitor) was developed as a compact device with a 4-kbit SRAM particle detector and two p-FET total dose monitors. Thus it can be used as a spacecraft radiation alarm and in situ total dose monitor. This paper discusses the design and calibration of the SRAM for proton, alpha, and heavy ion detection. Upset rates for the RADMON, based on a newly developed space particle flux algorithm, are shown to vary over eight orders of magnitude.

RADMON↗

A Combined Al-Mg/Pb-Pb Age of the Solar System

Astrophysical models of planet formation and protoplanetary disk evolution demand precise and accurate timing of the sequence of events in the solar nebula, relative to a time t=0, usually taken to be during the short epoch of CAI (Ca-rich, Al-rich inclusion) formation. Most CAIs formed withlive26Al (mean-life τ26= 1.034 Myr [1]), with an abundance 26Al/27Al ≈ (26Al/27Al)SS= 5.23 × 10-5[2]. We adopt this as the widespread level of 26Al in the solar nebula at t=0. Assuming spatial homogeneity of 26Al, an inclusion that had less 26Al, (26Al/27Al)0, formed a time Δt26= τ26ln[(26Al/27Al)SS/ (26Al/27Al)0] after t=0.These ages are typical precise to within ±0.1 Myr. Igneous bulk meteorites and inclusions can be relatively dated by the Al-Mg chronometer, but only ifΔt26<6 Myr. The Pb-Pb system is useful as a longer relative chronometer. It yields absolute ages tPb using 207Pb/206Pb, 206Pb/204Pb, and 238U/235U ratios measured indifferent portions of a sample, assuming certain half-lives [4]. These absolute ages are uncertain to within ±9 Myr due to uncertainties in the 235U half-life[3], but times of formation ΔtPb= tCAI–tPb relative to t=0, are more precise(±0.5Myr),iftCAI can be found. Here, tCAI means the Pb-Pb age that would be measured in CAIs using the half-lives the community typically uses, if they achieved isotopic closure at t=0. Unfortunately, direct Pb-Pb dating of CAIs has not definitively determined tCAI. Based on four CAIs with canonical (26Al/27Al)0,[5,6] found tPb= 4567.30 ± 0.16 Myr. No other CAI ages with measured 238U/235U have been reported in the refereed literature, but there are hints of other CAIs with ages tPb= 4568.0 ± 0.2 Myr [7] and tPb= 4568.3 ± 0.2 Myr [8].It is unclear whether anyof these igneous type B CAIs isotopically closed at t=0 or represents tCAI. Instead of measurements, we advocate finding tCAI by minimizing the discrepancies between the Al-Mg and Pb-Pb chronometers. Assuming Δt26=ΔtPb, we find the implied t’CAI= tPb+Δt26, then define t*CAIas the weighted mean of the t’CAI. t*CAIis the best guess for the Pb-Pb age of t=0; the assumption of homogeneity is justified if the t’CAI cluster within errors around t*CAI. This statistical approach is similar to, but improves on, that of[9]. We find t*CAI= 4568.73 ± 0.16 Myr. Below we discuss our methodology and the implications of this age for CAIs, 1.4 Myr older than the reported and typically used age 4567.30±0.16 Myr. Methods: We base our estimate of t*CAIon five achondrites for which published (26Al/27Al)0and Pb-Pb ages exist: the quenched angrites D’Orbigny, Sahara 99555 (SAH 99555), and Northwest Africa (NWA) 1670; the pseudo-eucrite Asuka 881394; and the inner disk achondrite. All are “NC” (non-carbonaceous) achondrites that likely cooled quickly enough that the Al-Mg and Pb-Pb systems achieved isotopic closure simultaneously. We also considered the “CC” (carbonaceous chondrite-like) achondrites NWA 2796 and NWA 6704, butdo not include them in our fit. Al-Mg and Pb-Pb seem not to have closed simultaneously, possibly because formation in the outer disk from volatile-rich composition led to slower cooling. Of the 8 chondrules from NWA 5697 measured by [20,21], we also consider the 4 for which 238U/235U was measured: 2-C1, 5-C2, 3-C5, 11-C1.Depending on their post-formation thermal histories, the Al-Mg and Pb-Pb systems in chondrules may or may not have closed simultaneously. Table 1: (26Al/27Al)0, Pb-Pb ages of selected samplesSample(26Al/27Al)0/ 10-6RefPb-PbRefD’Orbigny3.98±0.15104563.43±0.19♮10-12SAH 995553.64±0.18104563.88±0.2712NWA16705.92±0.59104564.39±0.24*10Asuka 88139413.1±0.5613-154564.98±0.1715NWA 73253.03±0.14164563.4±2.616NWA 27963.94±0.16174562.89±0.5917NWA 67043.03±0.14184562.76±0.26192-C17.56±1.53204567.57±0.56*215-C27.04±1.51204567.54±0.52*213-C58.85±1.83204566.20±0.63*2111-C15.55±1.84204565.84±0.72*21*regression based on one subset of data points ♮weighted mean of two datasets Pb-Pb ages are proportional to the intercept of the line formed by linear regression of 207Pb/206Pb vs. 206Pb/204Pb data from various washes, leachates and residues of acid dissolution of a sample. Because contamination by terrestrial or primordial Pb is pervasive, some fractions must be excluded from regressions to ensure a fit with acceptable mean squares weighted deviation (MSWD). Usually points are excluded based on low [Pb], or low 206Pb/204Pb ratio(low radiogenic component), with single outliers identified [11,12,15,16,17]. In the starred examples (Table 1)and the case of 3 CAI Pb-Pb ages [5], up to half the points were excluded solely because did not fit a pre-determined line. This approach is vulnerable to confirmation bias and produces fits with low MSWD and too-low Pb-Pb age uncertainty. Regressing the same data points as [10], were produce the Pb-Pb age of NWA 1670 of 4564.39±0.24 Myr. But selecting other combinations of data points, other, equally valid, isochrons yield ages from 4563.77±0.21 Myr to 4564.64±0.23 Myr. Similar arguments apply to the Pb-Pb isochrons built by [21] for chondrules 2-C1 (we find 4567.33±0.44 to 4567.85±0.46 Myr), 5-C2 (4566.84±0.53 to 4567.70±0.44 Myr), 3-C5 (4565.84±0.54to 4567.04±0.54)and 11-C1 (4565.36±0.51 to 4565.74±0.45 Myr). Our adopted ages for these and NWA 1670 are listed in Table 2.Table 2. tCAI estimated from various components, using our regressions for the chondrules & NWA 1670.SampleΔt26(Myr)tPb(Myr)t’CAI(Myr)D’Orbigny5.05±0.044563.43±0.194568.48±0.19SAH 995555.14±0.054563.88±0.274569.02±0.27NWA16704.64±0.104564.21±0.634568.85±0.67Asuka 8813943.81±0.044564.98±0.174568.79±0.17NWA 73255.33±0.054563.4±2.64568.7±2.6NWA 27965.06±0.044562.89±0.594567.95±0.59NWA 67045.29±0.134562.76±0.264568.05±0.292-C12.00±0.214567.59±0.704569.59±0.725-C22.07±0.224567.23±0.914569.30±0.933-C51.84±0.214566.44±1.124568.28±1.1411-C12.32±0.344565.52±0.664567.84±0.73achondrite4568.72±0.16chondrules4568.76±0.58combined4568.73±0.16A weighted average of the five NC achondrites(or just D’Orbigny, SAH 99555 and Asuka 881394)yields t*CAI= 4568.72 ± 0.16Myr. All are consistent with this value to within 1.8σ, and MSWD=1.5. Including the 4 U-corrected chondrules, t*CAI= 4568.73± 0.16Myrwith MSWD=1.66, which is statistically significant. All chondrules and NC achondrites are consistent with this to within 1.8σ, (Figure 1).Figure 1. Al-Mg formation times after t=0 vs. Pb-Pb ages. The five NC achondrites and four chondrules are consistent with a Pb-Pb age of t=0 of 4568.7 Myr. Discussion: The data from achondrites and chondrules are consistent with a single Pb-Pb age at t=0, justifying the assumption of 26Al homogeneity. The age, 4568.7 Myr, is ≈1.4 Myr older than the commonly accepted Pb-Pb age of CAIs that formed with canonical 26Al/27Al at t=0 [3]. Others have interpreted the discrepancy to signify 26Al heterogeneity in the CAI-forming region[5,21]. We suggest instead that CAIs were exposed to transient heating events that reset the Pb-Pb system without disturbing the Al-Mg system. Notably, chondrules typically experienced transient heating at these times in the nebula [22]. If so, direct measurements of CAIs will not yield as reliable a Pb-Pb age of t=0 as statistical approaches like this and that of [9].References:[1] Auer et al. 2009. [2] Jacobsen, B et al. 2008, EPSL 272, 353-364. [3] Tissot, Fet al. 2017, GCA 213, 593-617.[4] Villa, I et al. 2016, GCA 172, 387-392.[5] Amelin, Y et al. 2010, EPSL 300, 343-350.[6] Connelly, Jet al. 2012, Science 338, 651.[7] Bouvier, Aet al. 2011, LPICo 1639, 9054. [8] Bouvier, Aand Wadhwa, M2010, Nat Geosci 3, 637-641.[9] Nyquist, Let al. 2009, GCA 73, 5115-5136.[10] Schiller et al. 2015. [11] Wadhwa & Brennecka 2012. [12] Tissot et al. 2017. [13] Nyquist et al. 2003. [14] Wadhwa et al. 2009. [15] Wimpenny et al. 2019, GCA 244, 478-501.[16] Koefoed et al. 2016, GCA 183, 31-45. [17] Bouvier, A et al. 2011, GCA 75, 5310-5323. [18] Sanborn, Met al. 2019, GCA 245, 577-596. [19] Amelin, Yet al. 2019, GCA 245, 628-642.[20] Bollard, Jet al. 2017, Sci Adv 3 ,e1700407. [21] Bollard, Jet al. 2019, GCA 260, 62-83.[22] Villeneuve, J et al. 2009, Science 325, 985

S. J. Desch↗