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Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
Device employs sensitive photoelectric electrodes and solid-state memory, can be used at visible UV and X ray wavelengths, includes nonmagnetic proximity focusing, and is immune to high energy charged-particle background.
Protective circuit consists of solid state comparator switch and high current switching device combined into single module, which can be mounted directly on each cell as part of cell or battery case construction. System prohibits driving cells beyond set voltage limits and allows deeper discharge without cell reversal.
The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.
Recent efforts in our laboratories have concentrated on the development of an all solid state gas sensor, by combining solid electrolyte (ion exchange membrane) technology with advanced thin film deposition processes. With the proper bias magnitude and polarity these miniature electro-chemical,cells show remarkable current responses for many common pollution gases. Current activity is now focused on complementing a multiple array (matrix) of these solid state sensors, with a digital electronic scanner device possessing "scan-compare-identify-alarm: capability. This innovative approach to multi-component pollutant gas analysis may indeed be the advanced prototype for the "third generation" class of pollution analysis instrumentation so urgently needed in the decade ahead.
Miniature micropower solid-state circuit measures and telemeters the body temperature of laboratory animals over periods up to two years. The circuit employs a thermistor as a temperature sensing element and an fm transmitter. It is constructed from conventional discrete components or integrated circuits.
Timing device for controlling camera shutter during Aerobee rocket flight
Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.
In the near future, military aircraft will need to know precisely their true airspeed in order to optimize flight conditions. In comparison with classical anemometer probes, an airborne Doppler lidar allows measurement of the air velocity without influence from aircraft aerodynamic disturbance. While several demonstration systems of heterodyne detection using a CO2 laser have been reported, improvements in the technology of solid state lasers have recently opened up the possibility that these devices can be used as an alternative to CO2 laser systems. In particular, a diode pumped Tm:Ho:YAG laser allows a reliable compact airborne system with an eye safe wavelength (lambda = 2.09 microns) to be achieved. The theoretical study of performances of a coherent lidar using a solid state diode pumped Tm:Ho:YAG laser, caled SALSA, for measuring aircraft airspeed relative to atmospheric aerosols is described. A computer simulation was developed in order to modelize the Doppler anemometer in the function of atmospheric propagation and optical design. A clever analysis of the power budget on the detector area allows optical characteristic parameters of the system to be calculated, and then it can be used to predict performances of the Doppler system. Estimating signal to noise ratios (SNR) and heterodyne efficiency provides the available energy of speed measurement as well as a useful measurement of the alignment of the backscattered and reference fields on the detector.
The work described in this report covers various aspects of the Rainbow solid-state actuator technology. It is presented in six parts dealing with materials, processing, fabrication, properties and associated phenomena. The Rainbow actuator technology is a relatively new materials development which had its inception in 1992. It consists of a new processing technology for preparing piezoelectric and electrostrictive ceramic materials. It involves a high temperature chemical reduction process which leads to an internal pre-stressing of the oxide wafer, thus the name Rainbow, an acronym for Reduced And INternally Biased Oxide Wafer. Ceramics fabricated by this method produce bending-mode actuator devices which possess several times more displacement and load bearing capacity than present-day benders (unimorphs, bimorphs). It is anticipated that these solid-state, electromechanical actuators which can be used in a number of applications in space such as cryopump motors, anti-vibration active structures, autoleveling platforms, telescope mirror correctors and autofocusing devices. When considering any of these applications, the key to the development of a successful device is the successful development of a ceramic material which can produce maximum displacement per volt input; hence, this initiative involving a solid-state means for achieving unusually high electromechanical displacement can be significant and far reaching. An additional benefit obtained from employing the piezoelectric effect in these actuator devices is the ability to also utilize them as sensors; and, indeed, they can be used as both motor (actuator) and generator (sensor) in multifunction devices.
A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.
Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.
Power combiner/divider devised in which output from several solid-state modules combined directly into TE01 mode of circular waveguide. Results in low-loss, wide band device: because axisymmetry of TE01 mode, no essential limit on N. Latter feature is advantage in design of wide band, high-power, solid-state amplifiers operating at millimeter wavelengths.
The discovery of rings surrounding Uranus has prompted reexamination of telescopic observations made a year ago with a solid-state area detector called a charge-coupling device (CCD). The extreme narrowness of the rings apparently caused them to be hidden in glare from the planet, the reflectivity of which is very high in the blue and green regions of the spectrum. However, Uranus appears as a much darker image in the near-infrared spectral regions detected by the CCD. Although no direct evidence of the rings is obtainable from the CCD images, some simplifying assumptions permit the deduction from the CCD data that average reflectivity of individual particles composing the rings is at most a few percent, much closer to that of carbonaceous chondritic material than to that of the ice-coated particles in Saturn's rings.
A multi-cell battery protection system is described wherein each cell has its own individual protective circuit. The protective circuits consist of a solid state comparator unit and a high current switching device such as a relay. The comparator units each continuously monitor the associated cell and when the cell voltage either exceeds a predetermined high level or falls below a predetermined low level, the relay is actuated whereby a bypass circuit is completed across the cell thereby effectively removing the cell from the series of cells.
The space station requires an increase in power or energy of at least several orders of magnitude compared to previous space missions. With the requirement up in the range of 10 kilowatt hours, this obviiously requires the development of new technology. Although the power area is very well integrated in the spacecraft itself, it represents a diverse set of components necessary for energy conversion, electronics, and energy distribution. Considerable work is ongoing at NASA Lewis in the power devices development area, including transformers, large area solid-state chips, transistors, and fast recovery diodes. This work is oriented toward eventual application to both AC and DC power conversion approaches. In the energy storage area, there are many options available to fit into the space station representing various degrees of risk and leverage combination, such as the near-term integral-pressure-vessel nickel hydrogen battery, an advanced Ni-H2 battery concept, and the regenrative hydrogen-oxygen system utilizing essentially the Shuttle orbiter type of fuel cell.
A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).