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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17

Noncoplanar minimum delta V two-impulse and three-impulse orbital transfer from a regressing oblate earth assembly parking ellipse onto a flyby trans-Mars asymptotic velocity vector.

Comparison of two-impulse and three-impulse orbital transfer, using data from a 63-case numerical study. For each case investigated for which coplanarity of the regressing assembly parking ellipse was attained with the target asymptotic velocity vector, a two-impulse maneuver (or a one-impulse equivalent) was found for which the velocity expenditure was within 1% of a reference absolute minimum lower bound. Therefore, for the coplanar cases, use of a minimum delta-V three-impulse maneuver afforded scant improvement in velocity penalty. However, as the noncoplanarity of the parking ellipse and the target asymptotic velocity vector increased, there was a significant increase in the superiority of minimum delta-V three-impulse maneuvers for slowing the growth of velocity expenditure. It is concluded that a multiple-impulse maneuver should be contemplated if nonnominal launch conditions could occur.

Bean, W. C.↗

Plane elastostatic analysis of V-notched plates.

Solutions are given for several plane elastostatic problems of plates having a V-notch on one edge, and subjected to a variety of boundary conditions. The effect of the magnitude of the V-notch angle and specimen geometry on stress intensity factors KI and KII are obtained for unloaded notch surfaces. There is less than one per cent difference in opening model stress intensity factor in going from a zero degree notch angle to a 30 degree notch angle. Notch opening displacements at the plate edge were measured experimentally, and the results obtained were in excellent agreement with the computed results.

Gross, B.↗

Intrinsic B-V color for galactic cepheids and some comments on the Sandage-Tammann relationship

Transformations are found for converting the b-y color excesses for Cepheids given by Williams (1966) and Kelsall (1971) into B-V excesses. The combination of these results with the E(B-V)'s determined by Sandage and Tammann (1971) gives precise data for eighty-eight galactic Cepheids. The period-color and period-color-(amplitude defect) relationships, that are germane to the LogP intervals 0.4 to 1.4 and 0.4 to 1.3, respectively, are found.

Kelsall, T.↗

Precise measurement of charged defects in III-V compounds (2)

The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.

Soest, J. F.↗

Horn antenna with v-shaped corrugated surface

Corrugated shape is easily machined for millimeter wave application and is better suited for folding antenna designs. Measured performance showed ""V'' corrugations and rectangular corrugations have nearly the same pattern beamwidth, gain, and impedance. Also, ""V'' corrugations have higher relative power loss.

Beck, F. B.↗

Epitaxial growth of III-V compounds for electroluminescent light sources

The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

Chu, T. L.↗

Application of the MOS-C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.

Weinberg, I.↗

A review of the NASA V-G/VGH general aviation program

The V-G and VGH data collected from a wide variety of general aviation airplanes since the inception of the NASA V-G/VGH General Aviation Program in 1962 are presented. These data were analyzed to obtain information on the gust and maneuver loads, on the operating practices, and on the effects of different types of operations on these parameters.

Jewel, J. W., Jr.↗

Correlation between nonequilibrium thermodynamic theory and V-I curves of a thermionic converter

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

Robinson, L. B.↗

Analysis of stability contributions of high dihedral V-tails

An investigation was undertaken to determine the effectiveness of four analytical methods (empirical, modified empirical, vortex-lattice, and an inviscid, three dimensional, potential flow, wing body program) to estimate the lateral and longitudinal static stability characteristics of an isolated V-tail wind tunnel model. The experimental tests were conducted in the V/STOL tunnel at a Mach number of 0.18. Angle-of-attack data were obtained from -12 deg to 8 deg at 0 deg sideslip. Sideslip sweeps from -5 deg to 10 deg were made at angles of attack of 4 deg, 0 deg and -4 deg. The V-tail dihedral angles were 45 deg, 50 deg, 55 deg, and 60 deg.

Freeman, C. E.↗

The expanding envelope of Tau Sco /B0 V/

Results are reported for an analysis of the UV spectrum of Tau Sco as observed by Copernicus. It is found that the spectrum exhibits a number of resonance lines of C III, C IV, N III, N V, O VI, Si IV, and P V, all of which have extended violet absorption wings that reach several different velocities. The UV lines of Tau Sco are compared with those of Zeta Pup, the line profiles are studied by a comparison with predicted profiles, and the optical depth of the lines is derived as a function of velocity in the envelope by means of line fitting. The velocity-height relation is examined, the mass-loss rate is derived, and the ionization equilibrium in the envelope is investigated. The data are then evaluated in light of three proposed mass-loss mechanisms. The mass-loss rate is estimated to be about 7 billionths of a solar mass per year, and the observed rapid acceleration of the stellar wind is attributed to radiation pressure in the envelope. It is shown that an imperfect-flow model for the stellar wind gives qualitative agreement with the observations.

Lamers, H. J. G. L. M.↗

Driver for solar cell I-V characteristic plots

A bipolar voltage ramp generator which applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-V) characteristic between short circuit and open circuit conditions is disclosed. The generator has automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the I-V curve with about equal distance from that center to each of the end points.

Turner, G. B.↗

Delta V errors due to attitude correction maneuvers of a spinning spacecraft

A statistical error analysis has been performed to evaluate the change in velocity of a spin stabilized spacecraft due to thruster induced attitude correction maneuvers. Analytical expressions were developed to determine the mean and variance of the velocity in terms of the nominal values and uncertainties of key spacecraft parameters. These parameters include thrust, thruster timing, thruster alignment, plume impingement force and estimated spacecraft mass. Typical values of these parameters and their uncertainties for NASA's Galileo spacecraft were used to evaluate these expressions. The results of the analysis allow the effect of attitude correction maneuvers to be evaluated with respect to the functional requirements on nongravitational acceleration. Other results include the identification of major sources of delta V error and studies of the sensitivity of delta V to variations in the error sources.

Zipursky, H. J.↗

Structure and optical properties of evaporated films of the Cr- and V-group metals

Thin films of Cr, Mo, and W rapidly evaporated in high vacuum (5 x 10 to the -7th torr) onto room-temperature substrates show anomalously low reflectance (compared to bulk samples). From electron and X-ray diffraction and electron microscopy, the normal bcc crystal structure is found, but with very fine grains. Columnar grains about 100 A in diameter were separated by a less dense grain-boundary network about 10-A wide. The measured optical conductivity agrees with an inhomogeneous-medium model that assumes the normal crystalline conductivity for the grain interiors, with model parameters that correlate to the observed columnar grain size. In contrast, V and Nb films rapidly evaporated onto room-temperature substrates have the reflectance of bulk crystalline material. On liquid-nitrogen temperature substrates, however, V and Nb have normal bcc crystal structure but with small flat-plate grains, and the same model, with appropriate parameters, accounts for the optical conductivity. The difference between these two groups apparently depends on residual gases segregated at the grain boundaries in the Cr-group films.

Nestell, J. E., Jr.↗

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗