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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17

Heat dissipation of high rate Li-SOCl sub 2 primary cells

The heat dissipation problem occurring in the lithium thionyl chloride cells discharged at relatively high rates under normal discharge conditions is examined. Four heat flow paths were identified, and the thermal resistances of the relating cell components along each flow path were accordingly calculated. From the thermal resistance network analysis, it was demonstrated that about 90 percent of the total heat produced within the cell should be dissipated along the radial direction in a spirally wound cell. In addition, the threshold value of the heat generation rate at which cell internal temperature could be maintained below 100 C, was calculated from total thermal resistance and found to be 2.9 W. However, these calculations were made only at the cell components' level, and the transient nature of the heat accumulation and dissipation was not considered. A simple transient model based on the lumped-heat-capacity concept was developed to predict the time-dependent cell temperature at different discharge rates. The overall objective was to examine the influence of cell design variable from the heat removal point of view under normal discharge conditions and to make recommendations to build more efficient lithium cells.

Cho, Y. I.↗

Improving Stability of Triple-Cation Perovskite Solar Cells under High-Temperature Operation

Metal halide perovskite photovoltaic performance required for commercial technology encompasses both efficiency and stability. Advances in both these parameters have recently been reported; however, these strategies are often difficult to directly compare due to differences in perovskite composition, device architecture, fabrication methods, and accelerated stressors applied in stability tests. In particular, it is found that there is a distinct lack of elevated temperature, operational (light and bias) stability data. Furthermore, significant testing is required to understand the interactions when combinations are used (e.g., additives used with posttreatments). Herein, individual and combined additive, posttreatment, and contact layer strategies from recent literature reports under standardized operational stability tests of p-i-n CsMAFA perovskites at 70 degrees C are evaluated. Through analysis of over 1000 devices, it is concluded that the hole-transport layer (HTL) is the most significant component impacting elevated temperature operational stability. This analysis motivates future development of high-performance HTLs.

14 SOLAR ENERGY↗

Load following power generation and power storage using REP and PEM technology

A hydrogen generation system for generating hydrogen and electrical power includes a power supply, a reformer-electrolyzer-purifier (REP) assembly including at least one fuel cell including an anode and a cathode separated by an electrolyte matrix, at least one low temperature fuel cell, and a hydrogen storage. The at least one fuel cell is configured to receive a reverse voltage supplied by the power supply and generate hydrogen-containing gas in the anode of the at least one fuel cell. The at least one low temperature fuel cell is configured to receive the hydrogen-containing gas output from the REP assembly. The at least one low temperature fuel cell is configured to selectably operate in a power generation mode in which the hydrogen-containing gas is used to generate electrical power and a power storage mode in which the hydrogen-containing gas is pressurized and stored in the hydrogen storage.

Jahnke, Fred C.↗

Low temperature performance of lithium/silver vanadium oxide cells

Lithium/silver vanadium oxide cells for low temperature applications have been developed. Prismatic and spirally wound AA cells were tested under constant load discharge of 0.3 to 1.8 amps or pulse discharge of 0.225 or 1.0 amps at temperatures from -40 to 25 C. At -40 C with current densities of 2.5 mA/cm2, 23 percent of theoretical capacity was achieved under constant load discharge and 40 percent of theoretical capacity was achieved under pulse test. Self-discharge estimates of 0.7 percent per year at 25 C were obtained from microcalorimetry. Preliminary safety testing of the cells revealed no violent performance under short circuit or crush tests.

Takeuchi, E. S.↗

Long-Term Degradation of Passivated Emitter and Rear Contact Silicon Solar Cell under Light and Heat

Advanced designs enable high-efficiency solar cells; however, more complex structures create new long-term stability concerns. Herein, the long-term degradation processes affecting advanced silicon solar cells using laboratory-based illumination and heating over hundreds of hours are investigated. The activation energy for the degradation of voltage is estimated and the degradation rates to normal solar cell operating temperature ranges are extrapolated. The cell degradation observed at high temperatures in the lab is kinetically similar to the process affecting field-deployed modules contributing to 0.37% year-1 of annualized degradation. Electroluminescence and photoluminescence mapping show that the degradation is dominated by minority carrier lifetime reduction. Suns-open-circuit voltage and light beam-induced current results indicate that the degradation could result from passivation degradation at the surface or defect formation in the near-subsurface region, leading to increased minority carrier recombination. This work highlights a long-term degradation process under elevated temperature and illumination that may continue to affect cells in an irreversible manner that is separate from recoverable light-induced degradation and light- and elevated temperature-induced degradation.

14 SOLAR ENERGY↗

Temperature coefficients for concentrator cells at various electron and proton fluence levels

Data are presented on the Isc, Voc and Pmax temperature coefficients for several small concentrator solar cells. The cells are AlGaAs (1.72 eV), GaAs, silicon and InGaAs (1.1 eV) concentrator cells operating at 6.25 and 100 times AM0. The temperature range covered was 25 to 100 C. Cells were irradiated with 1-MeV electrons and 37-MeV protons, and data are presented at different fluence levels.

Curtis, Henry B.↗

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Curtis, H. B.↗

Determination of optimum sunlight concentration level in space for 3-5 cascade solar cells

Current-voltage curves were calculated for each cell in a cascade structure using a solar cell diode equation and superposition. Terms for the light generated current, diffusion current, space charge recombination current and series and shunt resistance are included. Individual current voltage curves are added in series with ohmic resistance losses for the cell interconnects to obtain the cascade cell performance. Temperature was varied with concentration, using several models, and ranged from 55 C at one Sun to between 80 and 200 C at 100 Suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that maximum efficiency (30%) occurs in the 50 to 100X Sun concentration range, provided series resistance is below 0.015 ohm-sq cm and cell temperature is 80 C at 100 Suns.

Curtis, H. B.↗

Mechanically induced thermal runaway severity analysis for Li-ion batteries

Thermal runaway is one of the most important safety concerns in the deployment of Li-ion batteries. For this study, we developed a standardized single-side indentation test protocol to induce an internal short-circuit. Cell voltage, temperature, and applied compressive force are monitored as a function of time. Each cell is given an observed hazard severity (OHS in five categories) modified from the EUCAR table. Meanwhile a calculated hazard severity (CHS) is obtained solely based on temperature and voltage curves. The calculation formula considers the cell temperature, rate of temperature increase, cell capacity, state of charge (SOC), voltage drop, and voltage drop rate. Each term is assigned with an appropriate weight to scale the calculated score from 0 to100. This method was applied to >100 Li-ion batteries with various SOCs and chemistries, and their OHS and CHS were displayed against SOC. The purpose is to provide battery designers, manufacturers, and end-users a clear comparison of thermal runaway severity of different batteries.

25 ENERGY STORAGE↗

Relationship of dislocation density of silicon to solar cell current loss at low temperature.

Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.

Mandelkorn, J.↗

Low temperature Zn diffusion for GaSb solar cell structures fabrication

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Sulima, Oleg V.↗

Lithium Ion Electrolytes and Lithium Ion Cells With Good Low Temperature Performance

There is provided in one embodiment of the invention an electrolyte for use in a lithium ion electrochemical cell. The electrolyte comprises a mixture of an ethylene carbonate (EC), an ethyl methyl carbonate (EMC), an ester cosolvent, and a lithium salt. The ester cosolvent comprises methyl propionate (MP), ethyl propionate (EP), methyl butyrate (MB), ethyl butyrate (EB), propyl butyrate (PB), or butyl butyrate (BB). The electrochemical cell operates in a temperature range of from about -60 C to about 60 C. In another embodiment there is provided a lithium ion electrochemical cell using the electrolyte of the invention.

Smart, Marshall C.↗

Silicon solar cell interconnectors for low temperature applications.

Discussion of the design and techniques of solar cell interconnections meeting the requirements of mission life expectancies of 5 to 10 years in the face of the vibration stresses of launch and the stresses induced (especially between dissimilar materials with different thermal coefficients of expansion) by thermal cycling throughout the mission. Generalized stress equations are developed that give the minimum stress relief loop dimensions for a 'no fatigue' interconnector. Also, the thermal expansion stresses induced at the metal-to-silicon interface were investigated and generalized equations developed for determining the stresses in each of the members. These relationships, as verified by experimental tests, can be used to determine the maximum allowable interconnector thickness for failure prevention in thermal cycling environments.

Ralph, E. L.↗