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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

CryoPDK Development for 22nm FDSOI CryoCMOS

Cryogenic Process Design Kits (PDKs) are an indispensable tool in the design of complex integrated circuits across a wide spectrum of applications, from noble element detectors to Quantum Information Science, Superconducting Nanowire Single Photon Detectors (SNSPDs), and precision atomic clocks. The development of PDK-compatible SPICE models is a complex endeavor requiring test structures, measurements, model extraction and fitting. We will present the cryogenic modeling and development of a cryo-PDK for a 22nm FDSOI CMOS process for operation at 3.8 Kelvin.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Silicon-On-Silicon Carbide Platform for Integrated Photonics

Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Alpha-particle sensitive test SRAMs

A bench-level test is being developed to evaluate memory-cell upsets in a test SRAM designed with a cell offset voltage. This offset voltage controls the critical charge needed to upset the cell. The effect is demonstrated using a specially designed 2-micron n-well CMOS 4-kb test SRAM and a Po-208 5.1-MeV 0.61-LET alpha-particle source. This test SRAM has been made sensitive to alpha particles through the use of a cell offset voltage, and this has allowed a bench-level characterization in a laboratory setting. The experimental data are linked to a alpha-particle interaction physics and to SPICE circuit simulations through the alpha-particle collection depth. The collection depth is determined by two methods and found to be about 7 micron. In addition, alpha particles that struck outside the bloated drain were able to flip the SRAM cells. This lateral charge collection was observed to be more than 6 micron.

Buehler, M. G.↗
NASA NTRS1988

Addressable Inverter Matrix Tests Integrated-Circuit Wafer

Addressing elements indirectly through shift register reduces number of test probes. With aid of new technique, complex test structure on silicon wafer tested with relatively small number of test probes. Conserves silicon area by reduction of area devoted to pads. Allows thorough evaluation of test structure characteristics and of manufacturing process parameters. Test structure consists of shift register and matrix of inverter/transmission-gate cells connected to two-by-ten array of probe pads. Entire pattern contained in square area having only 1.6-millimeter sides. Shift register is conventional static CMOS device using inverters and transmission gates in master/slave D flip-flop configuration.

Buehler, Martin G.↗
NASA NTRS1990

Integrated CMOS RF amplifier

This paper reports an integrated 2.0 micron CMOS RF amplifier designed for amplification in the 420-450 MHz frequency band. Design techniques are shown for the test amplifier configuration. Problems of decreased amplifier bandwidth, gain element instability, and low Q values for the inductors were encountered. Techniques used to overcome these problems are discussed. Layouts of the various elements are described and a summary of the simulation results are included. Test circuits have been submitted to MOSIS for fabrication.

Charity, C.↗
DOE OSTI2024

Cryogenic Front-End ASICs for Low-Noise Readout of Charge Signals

This paper presents design details and measurement results of LArASIC, a front-end application specific integrated circuit (ASIC) designed for low-noise readout of charge signals generated in neutrino study experiments within liquid argon time projection chambers. LArASIC comprises of 16-channels of programmable charge amplification and pulse shaping stages that provide a voltage readout proportional to the input charge and was optimized for operation at liquid argon temperature, i.e., 89 K. The chip was fabricated in a 180 nm CMOS process. Measurements at liquid nitrogen temperature, i.e., 77 K, indicate that the channel outputs have high linearity (INL < 0.1%) within the operating range, an equivalent noise charge of 534 electrons for a peaking time of 1 µs and a detector capacitance of 150 pF, and a worst-case inter-channel cross-talk of 0.35%. The paper also presents design choices made in the process of migrating LArASIC to CHARMS, an ASIC to be fabricated in a 65 nm process that includes all features provided by LArASIC, along with additional digital programmability for improved robustness and flexibility. CHARMS is intended for use in future high-energy physics experiments that require high-resolution charge or light readout with shorter pulse peaking times.

47 OTHER INSTRUMENTATION↗
NASA NTRS2012

Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The design is based on a proprietary library of differential current switching logic cells implemented in the standard 90-nm CMOS 9SF technology from IBM. The proprietary low-power LVDS physical interface is fully compatible with the SpaceWire standard, and can be directly connected to the SFP MSA (small form factor pluggable Multiple Source Agreement) optical transponder. The low-speed parallel interfaces are fully compatible with the standard 1.8 V CMOS input/output devices. The utilized proprietary annular CMOS layout structures provide TID tolerance above 1.2 MRad. The complete chip consumes less than 150 mW of power from a single 1.8-V positive supply source.

Katzman, Vladimir↗
DOE OSTI2025

Improved Charge Sensing on a SiMOS Double Quantum Dot using a Cryogenic Skipper Readout ASIC (Quandarum)

Major outstanding questions in high-energy physics such as the nature of dark matter and the existence of interactions beyond the standard model require new measurement techniques which are extremely sensitive to minute electromagnetic fields. An array of entangled spin qubits is a promising system for building novel detectors due to its combination of sensitivity and controllability. CMOS-based electron spin qubits, which have demonstrated the operational requirements for fault-tolerant quantum computing [1], offer a particular opportunity due to their compatibility with classical electronics, which allows the leveraging of decades of development of low-noise cryogenic detectors for physics. In this work, we combine a SiMOS double-quantum dot device architecture with a state-of-the-art cryoelectronic readout circuit [2-3] aimed to demonstrate improved charge readout using a single-electron transistor (SET). We identify the design characteristics for an SET that facilitate the use of on-chip classical electronics as a low-power, high-bandwidth first amplification stage and explore opportunities for sensor-readout co-design to minimize noise. This is the first of a series of steps to demonstrate high-fidelity readout of a large array of spin qubit with enough sensitivity to probe processes of interest for the investigation of beyond-standard-model physics.

Quinn, Adam [Fermilab]↗
NASA NTRS1989

Common source cascode amplifiers for integrating IR-FPA applications

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Woolaway, James T.↗
NASA NTRS2011

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

focal plane arrays (FPAs)↗
NASA NTRS1990

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

Buehler, M. G.↗
NASA NTRS1993

Spacecraft optical disk recorder memory buffer control

This paper discusses the research completed under the NASA-ASEE summer faculty fellowship program. The project involves development of an Application Specific Integrated Circuit (ASIC) to be used as a Memory Buffer Controller (MBC) in the Spacecraft Optical Disk System (SODR). The SODR system has demanding capacity and data rate specifications requiring specialized electronics to meet processing demands. The system is being designed to support Gigabit transfer rates with Terabit storage capability. The complete SODR system is designed to exceed the capability of all existing mass storage systems today. The ASIC development for SODR consist of developing a 144 pin CMOS device to perform format conversion and data buffering. The final simulations of the MBC were completed during this summer's NASA-ASEE fellowship along with design preparations for fabrication to be performed by an ASIC manufacturer.

Hodson, Robert F.↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
NASA NTRS2009

Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature Environments

Electronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing it to a total of 12 cycles between -195 C and +250 C. Following the cycling activity, measurements were performed again at the test temperatures of -195 C, +21 C, and +250 C.

Patterson, Richard↗
NASA NTRS1995

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

Kulkarni, Shriram↗
DOE OSTI2026

Nanophotonic waveguide chip-to-world beam scanning

A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.

Displays↗
DOE OSTI2025

The ETROC2 as the Final Version for CMS Endcap Timing Layer (ETL) Upgrade

The ETROC (Endcap Timing Readout Chip) is being developed for the LGAD-based CMS Endcap Timing Layer (ETL) at HL-LHC. The ETL on each side of the interaction region will be instrumented with a two-disk system of MIP-sensitive LGAD (Low Gain Avalanche Diodes) silicon devices, read out by ETROCs for precision timing measurement with down to ~30 ps timing resolution per track. The ETROC is designed to handle a 16 x 16 pixel cell matrix, with each pixel being 1.3 mm x 1.3 mm to match the LGAD sensor pixel size. The front-end design for preamplifier and discriminator has been specifically optimized for the reduced LGAD signals, with enough flexibilities to meet the ETL specific needs for time resolution, power budget and radiation profile. The ETROC chip is implemented in a commercial 65nm CMOS process. Each channel consists of a preamplifier, a discriminator, a TDC used for TOA (Time Of Arrival) and TOT (Time Over Threshold) measurements, and a memory for data storage and readout. An in-pixel auto threshold calibration is included, along with a self-testing pattern generator. The TOT is used for time-walk correction of the TOA measurement. The detailed hit information (TOA and TOT) from each cell will be read out from a local circular buffer after each Level-1 Accept (about 1 MHz). In addition, a charge injection circuit is implemented to allow for testing and calibration. For more detailed monitoring of the signal pulses, waveform sampling circuits are included for one pixel. The clock distribution is based on a 16x16 H-tree design with a shielding structure to alleviate potential interference. The global peripheral circuits include a PLL, a phase shifter, an I2C slave controller, a fast control block, a global readout, and a data driver along with an efuse and temperature sensor. The ETROC builds event data frames for each L1A selected event and is also capable of providing L1 trigger information for user-defined delayed hits. The main design challenge is how to extract precision timing information from the small LGAD signals in the presence of high irradiation fluence, while keeping the power consumption and digital activity low. The ETL design goal for the time resolution of 50 ps per hit is required to achieve a 35 ps arrival time measurement for a MIP particle, which has its track registered in two ETL disk layers. The LGAD contribution is known to be about 30 ps, this means that the jitter from the ETROC has to be kept below 40 ps. The ETROC2 is the first full size full functionality prototype design fully compatible with the final chip specifications for CMS ETL and now becomes the final version. The ETROC2 chips have been extensively tested. We will present here new testing results including the bump bonding yield improvement study, the time walk correction (TWC) generality study with one pixel TWC applying to all pixels, the final SEU testing using both heavy ion and proton beam, more beam test studies including different sensors, and readiness for the ETROC2 production for CMS ETL upgrade.

Liu, Tiehui [Fermilab] (ORCID:0009000765225605)↗
NASA NTRS1997

Sequence information signal processor for local and global string comparisons

A sequence information signal processing integrated circuit chip designed to perform high speed calculation of a dynamic programming algorithm based upon the algorithm defined by Waterman and Smith. The signal processing chip of the present invention is designed to be a building block of a linear systolic array, the performance of which can be increased by connecting additional sequence information signal processing chips to the array. The chip provides a high speed, low cost linear array processor that can locate highly similar global sequences or segments thereof such as contiguous subsequences from two different DNA or protein sequences. The chip is implemented in a preferred embodiment using CMOS VLSI technology to provide the equivalent of about 400,000 transistors or 100,000 gates. Each chip provides 16 processing elements, and is designed to provide 16 bit, two's compliment operation for maximum score precision of between -32,768 and +32,767. It is designed to provide a comparison between sequences as long as 4,194,304 elements without external software and between sequences of unlimited numbers of elements with the aid of external software. Each sequence can be assigned different deletion and insertion weight functions. Each processor is provided with a similarity measure device which is independently variable. Thus, each processor can contribute to maximum value score calculation using a different similarity measure.

Peterson, John C.↗