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At least 307 records · Page 17

Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces

The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays.

Neudeck, Philip G.↗

Protein-Precipitant-Specific Criteria for the Impact of Reduced Gravity on Crystal Perfection

The objective of this research is to provide quantitative criteria for the impact of reduced or enhanced convective transport on protein crystal perfection. Our earlier work strongly suggests that the magnitude of (lattice defect-inducing) fluctuations in the crystallization rate of proteins arise from the coupling of bulk transport and nonlinear interface kinetics. Hence, we surmised that, depending on the relative weight of bulk transport and interface kinetics in the control of the crystallization process on Earth, these fluctuations can either increase or decrease under reduced gravity conditions. The sign and magnitude of these changes depend on the specific protein-precipitant system. As a consequence, space environments can be either beneficial or detrimental for achieving structural perfection in protein crystals. The task objectives consist in systematic investigations of this hypothesis.

Vekilov, Peter G.↗

Validating Phasing and Geometry of Large Focal Plane Arrays

The Kepler Mission is designed to survey our region of the Milky Way galaxy to discover hundreds of Earth-sized and smaller planets in or near the habitable zone. The Kepler photometer is an array of 42 CCDs (charge-coupled devices) in the focal plane of a 95-cm Schmidt camera onboard the Kepler spacecraft. Each 50x25-mm CCD has 2,200 x 1,024 pixels. The CCDs accumulate photons and are read out every six seconds to prevent saturation. The data is integrated for 30 minutes, and then the pixel data is transferred to onboard storage. The data is subsequently encoded and transmitted to the ground. During End-to-End Information System (EEIS) testing of the Kepler Mission System (KMS), there was a need to verify that the pixels requested by the science team operationally were correctly collected, encoded, compressed, stored, and transmitted by the FS, and subsequently received, decoded, uncompressed, and displayed by the Ground Segment (GS) without the outputs of any CCD modules being flipped, mirrored, or otherwise corrupted during the extensive FS and GS processing. This would normally be done by projecting an image on the focal plane array (FPA), collecting the data in a flight-like way, and making a comparison between the original data and the data reconstructed by the science data system. Projecting a focused image onto the FPA through the telescope would normally involve using a collimator suspended over the telescope opening. There were several problems with this approach: the collimation equipment is elaborate and expensive; as conceived, it could only illuminate a limited section of the FPA (.25 percent) during a given test; the telescope cover would have to be deployed during testing to allow the image to be projected into the telescope; the equipment was bulky and difficult to situate in temperature-controlled environments; and given all the above, test setup, execution, and repeatability were significant concerns. Instead of using this complicated approach of projecting an optical image on the FPA, the Kepler project developed a method using known defect features in the CCDs to verify proper collection and reassembly of the pixels, thereby avoiding the costs and risks of the optical projection approach. The CCDs composing the Kepler FPA, as all CCDs, had minor defects. At ambient temperature, some pixels look far brighter than they should. These ghot h pixels have a higher rate of charge leakage than the others due to manufacturing variations. They are usually stable over time, and appear at temperatures above 5 oC. The hot pixels on the Kepler FPA were mapped before photometer assembly during module testing. Selected hot pixels were used as target gstars h for the purposes of EEIS testing. gDead h pixels are permanently off, producing a permanently black pixel. These can also be used if there is some illumination of the FPA. During EEIS testing, Dark Current Full Frame Images (FFIs) taken at room temperature were used to create the hot pixel maps for all 84 Kepler photometer CCD channels. Data from two separate nights were used to create two hot pixel maps per channel, which were cross-correlated to remove cosmic ray events which appear to be hot pixels. These hot pixel maps obtained during EEIS testing were compared to the maps made during module testing to verify that the end-to-end data flow was correct.

Standley, Shaun P.↗

Effect of Strict Head Down Tilt Bedrest on Pituitary Gland Height

BACKGROUND Pituitary gland deformity and loss of pituitary height have been identified in astronauts postflight, hypothesized to be related to increased intracranial pressure or intracranial pressure pulsatility exposure from prolonged weightlessness. Microgravity-induced chronic headward fluid shift has been suggested as a root cause of intracranial compliance changes leading to altered intracranial pressure dynamics. Elevated intracranial pressure or pressure pulsatility is theorized to promote the development of an arachnoid diverticulum, which herniates into the pituitary fossa via a defect in the diaphragma sellae compressing the pituitary gland. We aimed to determine if chronic headward fluid induced by strict head-down tilt bed rest (HDTBR) can cause similar quantitative changes in pituitary gland height. METHODS Control group data from two 6-degree HDTBR studies were analyzed (SANS CM and AGBRESA). The AGBRESA study collected MRI data at Baseline, 14 days into HDTBR (HDTBR-14), 52 days into HDTBR (HDTBR-52), and three days into Recovery (R+ 3) and included eight healthy adults (2 women), age = 33 ± 8 years. The SANS CM collected MRI data at Baseline, 15 days into HDTBR (HDTBR-15), 29 days into HDTBR (HDTBR-29), and 12 days into Recovery (R+12) and included twelve healthy adults (4 women), age = 34 ± 9 years. Pituitary gland height was evaluated using a sagittal, 3D T1-MPRAGE sequence obtained on a dedicated 3T Siemens Biograph MRI scanner using a 32-channel head coil. Following the reconstruction of a true orthogonal sagittal plane of the pituitary gland using a 3D multiplanar reconstruction tool (Horosproject.org), the anterior pituitary mid-gland height at the pituitary stalk level was quantified according to the methodology described by Kramer et al. . A paired t-test was used to evaluate changes from the baseline measurements. FINDINGS The mean height of the pituitary gland at baseline was 6.5 ± 1.7 mm (AGBRESA) and 5.7 ± 1.6 mm (SANS CM). From baseline measurements, the SANS CM STUDY data showed a decrease in mean pituitary height of 0.3 mm (p=.011) at HDTBR-15, 0.5 mm at HDTBR-29 (p<.001) and 0.2 mm at R+12 (p=.02). From baseline measurements, the AGBRESA data showed a decrease in mean pituitary height of 0.3 mm (p=.06) at HDTBR-14, 0.6 mm at HDTBR-52 (p<.002) and 0.2 mm at R+3 (p=.13). CONCLUSION HDTBR results in progressive loss of pituitary height, which is most severe with the longest HDTBR exposure. Early pituitary height loss was the same at HDTBR-14 (AGBRESA) and HDTBR-15 (SANS CM). Residual pituitary height loss was the same at R+12 and R+3 but only significant in the latter (SANS CM). The degree of pituitary height loss at HDTBR-52 replicates the 0.6 mm height loss found in long-duration astronauts after approximately six months of microgravity exposure (p<.01, preflight mean height=5.9 mm). The hormonal effects of pituitary height loss are unknown in astronauts and HDTBR subjects and should be investigated in future studies. Future work will examine the individual variability in the loss of pituitary gland height and whether those changes are associated with other SANS findings, such as optic disc edema.

L A Kramer↗

Evaluation of candidate metals in a simulated space shuttle main engine environment for application as turbine blade dampers

The high-pressure pumps for the space shuttle main engine are driven by combustion products which are 50 percent H2 and 50 percent H2O (by weight). The Haynes alloy 188, used in the dampers, experienced erosion. The erosion producing characteristics of wet H2 were evaluated using a controlled environment produced by a ballistic compressor. Four candidate materials were evaluated: H-188, A-286, Pt/Rh and Rh. Rh was clearly the most erosion resistant. Comparisons with AISI 4340 and Fe specimens of known uniformity indicate that metallurgical defects in the candidate materials are primary contributors to the higher than usual erosion.

Caveny, L. H.↗

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗

Solidification of II-VI Compounds in a Rotating Magnetic Field

This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow of liquid, however, is complex due to the competing flow induced by the rotating magnetic field and the buoyancy driven convection. When the acceleration forces are reduced to one thousandth of gravity, the flow pattern is much simplified and well controlled material transport through the solvent zone can be readily achieved. Triple axis diffractometry and x-ray synchrotron topography have demonstrated that there is no significant improvement in crystal quality for HgCdTe grown on earth from a tellurium solution when a rotating magnetic field is applied. However, modeling shows that the flow in microgravity with a rotating magnetic field would produce a superior product.

Gillies, D. C.↗

A method for interface shape control during Bridgman type crystal growth of HgCdTe alloys

A method is described for interface shape control of Hg(1-x)Cd(x)Te alloys during Bridgman-type crystal growth. The authors have used this method for several years to obtain the flat or convex interface shapes required for simultaneously reducing radial compositional variations and crystal defects. The method turns to advantage the thick-walled, fused-silica ampules required for growing these alloys. A proper combination of furnace geometry (two isothermal zones separated by a thin barrier), upper- and lower-zone temperatures, and growth rate is required. Examples of results are reported.

Szofran, F. R.↗

Measurement System Analysis of a Novel Phase-Based Ultrasonic NDE Technique for Bond Strength Measurement

Fiber reinforced polymer parts have shown tremendous benefits in aerospace structural applications, but their qualification and certification for use in safety critical areas are currently hindered by the lack of a capable non-destructive evaluation (NDE) method or technique for the inspection of these adhesively bonded parts. Conventional NDE methods and techniques typically detect gross bond defects in a qualitative (Pass/Fail) manner. These techniques struggle to detect weak or kissing bonds. Also, there are no widely adopted NDE methods or techniques for measuring interfacial bond strength or detecting kissing bonds. Bond strength is currently ensured by process control and semi-destructive testing. Results from recent research from other authors, including but not limited to mechanical testing, have shown an excellent correlation between interfacial stiffness of an adhesively bonded joint and the adhesive bond strength of that joint. In this paper, a measurement system analysis (MSA) of a novel phase-based ultrasonic NDE Technique, developed at NASA Langley Research Center, is presented for bond strength measurement to assess at an increased level the measurement process and identify components of variation in that measurement process.

Ultrasound↗

Impact of Defect Distributions on the Reliability of Structural Materials

The purpose of this study is to develop a probabilistic model to estimate the fatigue life of gas turbine disks made of powder superalloy metals. Such metals are known to have high strength and ductility under extremely high temperatures and known to have high fatigue lives. However, despite the high quality controls instituted during metal processing, sufficiently high numbers of ceramic inclusions materialize within the metal matrix creating weak links that lead to reduced fatigue lives. To study the effect of such ceramic inclusions on the fatigue life of gas turbine disks, an experimental program has been initiated at the NASA Glenn Research. In this phase of the study, a statistical analysis of the test results is undertaken which served as the basis of the probabilistic simulation model. The study is a part of the Crack Resistant Disk Materials task within the Ultra Safe Propulsion Project.

Ghosn, Michel J.↗

Radiation damage in lithium-counterdoped N/P silicon solar cells

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Hermann, A. M.↗

Analysis of Feedback Control Systems

BLOCK IT implements algorithm that obtains reduced-order feedback control equations for use in both time and frequency domain analysis. BLOCK IT computes real nonsingular similarity-transformation matrix-reduces real nonsymmetric matrix to block-diagonal form; each block is real quasi-upper triangular matrix. Algorithm works with defective and derogatory matrices. If program fails, algorithm generates data output used as guide for reformulation of mathematical equations that lead to ill-conditioned matrix not block-diagonalized.

Frisch, H. P.↗

Crystal growth of device quality GaAs in space

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

Gatos, H. C.↗

A Risk Analysis Tool for Estimating the Risk of Electrical Failures Due to Human Induced Defects

Aerospace electrical systems are required to withstand and adequately operate in extremely harsh environments that include, for example, high radiation exposure, temperature extremes, intense vibrational stress and drastic temperature cycling. The nature of aerospace electronics also demands high reliability since, with very few exceptions, there is no chance for hardware servicing or repairs. Common risk mitigation techniques for this type of situation are to perform a Reliability Analysis of the system throughout the development cycle, and to use electrical components that are regarded as “high reliability” because of additional controls and requirements applied in their design, manufacturing and testing. Unfortunately, studies have shown that even though these techniques are used, many systems fail to meet mission requirements well before the predicted lifetimes. This paper presents the analysis of failures of electrical parts, experienced during various stages of system development, at NASA Goddard Space Flight Center, Greenbelt MD, between the years 2001 and 2013. These components were subjected to qualification, screening and testing in which the goal was to ensure that the components would survive the stresses of the mission. The analysis categorizes failures by part type and failure mechanisms. One of the results of the analysis was the realization that a surprising proportion of failures experienced during system integration and testing were caused by human error (i.e. human induced defect). Further analysis included the determination of root failure mechanisms and any influencing factors contributing to these failures. The major causes of these defects were attributed to electrostatic damage (ESD), electrical overstress (EOS), mechanical overstress (MOS), and thermal overstress (TOS). Finally, the study proposes a risk analysis tool which incorporates these major causes for the failures, termed error-producing conditions (EPCs), and a proportionality factor representing the number of each type of failure that has occurred at the facility under study. These factors are quantified and used to communicate the risk of human induced defects for the assembly, integration and testing of space hardware based on the system’s electrical parts list. The new risk identification can trigger risk-mitigating actions more effectively, based on the presence of component categories or other hazardous conditions that have a history of failure due to human error.

Majewicz, Peter J.↗

Reduced order feedback control equations for linear time and frequency domain analysis

An algorithm was developed which can be used to obtain the equations. In a more general context, the algorithm computes a real nonsingular similarity transformation matrix which reduces a real nonsymmetric matrix to block diagonal form, each block of which is a real quasi upper triangular matrix. The algorithm works with both defective and derogatory matrices and when and if it fails, the resultant output can be used as a guide for the reformulation of the mathematical equations that lead up to the ill conditioned matrix which could not be block diagonalized.

Frisch, H. P.↗

Combined environmental effects on polymers

A series of space simulation tests on FEP Teflon and other polymeric thermal control coatings was conducted using UV, electrons, protons and Lyman-alpha wavelength vacuum UV radiation. Interest was centered on simulating synchronous altitude radiation environment conditions. Physical changes in materials included loss of specularity and introduction of a high density of photographable tracking defects on a microscopic scale. An example shows the discharge of trapped electrons when dielectric strength is exceeded. This leaves a portion of the Teflon volume no longer clear, but diffusely transmitting and reflecting. Thermophysical changes included degradation of solar absorptance coefficients as much as five-fold. The situation that prevails for earth orbit contrasted with polymer performance in the solar wind. It is suggested that conductive overcoatings be developed for polymers and other flexible materials, comparable or superior to those available for fused silica SSMs.

Fogdall, L. B.↗

Taking advantage of ground data systems attributes to achieve quality results in testing software

During the software development life cycle process, basic testing starts with the development team. At the end of the development process, an acceptance test is performed for the user to ensure that the deliverable is acceptable. Ideally, the delivery is an operational product with zero defects. However, the goal of zero defects is normally not achieved but is successful to various degrees. With the emphasis on building low cost ground support systems while maintaining a quality product, a key element in the test process is simulator capability. This paper reviews the Transportable Payload Operations Control Center (TPOCC) Advanced Spacecraft Simulator (TASS) test tool that is used in the acceptance test process for unmanned satellite operations control centers. The TASS is designed to support the development, test and operational environments of the Goddard Space Flight Center (GSFC) operations control centers. The TASS uses the same basic architecture as the operations control center. This architecture is characterized by its use of distributed processing, industry standards, commercial off-the-shelf (COTS) hardware and software components, and reusable software. The TASS uses much of the same TPOCC architecture and reusable software that the operations control center developer uses. The TASS also makes use of reusable simulator software in the mission specific versions of the TASS. Very little new software needs to be developed, mainly mission specific telemetry communication and command processing software. By taking advantage of the ground data system attributes, successful software reuse for operational systems provides the opportunity to extend the reuse concept into the test area. Consistency in test approach is a major step in achieving quality results.

Sigman, Clayton B.↗

Advanced Triangulation Displacement Sensors

Advanced optoelectronic triangulation displacement sensors undergoing development. Highly miniaturized, more stable, more accurate, and relatively easy to use. Incorporate wideband electronic circuits suitable for real-time monitoring and control of displacements. Measurements expected to be accurate to within nanometers. In principle, sensors mass-produced at relatively low unit cost. Potential applications numerous. Possible industrial application in measuring runout of rotating shaft or other moving part during fabrication in "zero-defect" manufacturing system, in which measured runout automatically corrected.

Poteet, Wade M.↗